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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Optical power beaming has the potential to fundamentally change how remote devices receive power, leading to technological innovation across many sectors. NREL is interested in teaming with partners to engineer field-ready (and space-ready) solutions for long-range power beaming and adapt new ideas to important applications.
Safety procedures and devices used to insure superconducting magnetic suspension system reliability are outlined. Power supplies and system failure are included.
A new and advanced portable life support system (PLSS) for space suit surface exploration will require a durable, compact, and energy efficient system to transport the ventilation stream through the space suit. Current space suits used by NASA circulate the ventilation stream via a ball-bearing supported centrifugal fan. As NASA enters the design phase for the next generation PLSS, it is necessary to evaluate available technologies to determine what improvements can be made in mass, volume, power, and reliability for a ventilation transport system. Several air movement devices already designed for commercial, military, and space applications are optimized in these areas and could be adapted for EVA use. This paper summarizes the efforts to identify and compare the latest fan and bearing technologies to determine candidates for the next generation PLSS.
Majority of very large potential benefits of wide band gap semiconductor power electronics have NOT been realized due in large part to high cost and high defect density of commercial wafers. Despite 20 years of development, present SiC wafer growth approach is yet to deliver majority of SiC's inherent performance and cost benefits to power systems. Commercial SiC power devices are significantly de-rated in order to function reliably due to the adverse effects of SiC crystal dislocation defects (thousands per sq cm) in the SiC wafer.
Photovoltaics (PV), also known as solar cells, are now found everywhere - in utility plants; on roofs of homes and commercial buildings; on platforms at sea; in agricultural fields; on vehicles, buildings, drones, and backpacks; and, in their longest running application, providing power in space. Continuous device innovation has led to increased efficiency and improved reliability for multiple PV technologies. Confronted with an urgent need to deploy PV at multiterawatt (TW) scale over the next two decades to mitigate greenhouse gas emissions, PV device innovation takes on new urgency and impact. This perspective reviews recent progress in device design and performance for PV technologies that are currently in commercial production at greater than 1 GW/year or enabling significant space-based power generation - Si, CdTe, CIGS, and multijunction III-V - and looks ahead to the next 5 years. In conclusion, we also identify device-related topics requiring cross-cutting research and innovation.
GridTrust represents a departure from reliance on a single organization or a single person to multiple organizations and therefore multiple people across organizational structures. The motivating idea behind involving multiple organizations is the increase in security due to human factors. More specifically, the requirement that distinct people in different organizations sign off on a change or an update makes a cyberattack much less likely due to the inherent requirement that both organizations be penetrated and fooled. GridTrust focuses on the software update process as the primary exemplar for the research and development work. A novel hardware-based technology referred to as a Physical Unclonable Function (PUF) provides a microchip Root-of-Trust (RoT), i.e., a starting point for verifying that the hardware being communicated with is the hardware the control center believes the hardware to be. As a result, staff at power grid control centers can ensure the accurate and reliable identification of hardware devices from the outset. The GridTrust protocol introduces two key innovations, as detailed in this report. Firstly, the utilization of a PUF as a root-of-trust in the initial phase of a software or firmware update. Secondly, the application of multiple cryptographic signatures from two or more organizations to the update binary. These signatures are verified before implementing the update on a power grid device in the field. In terms of GridTrust hardware design, this report outlines two main components. The first is the GridTrust Native Device, integrating PUF technology intrinsically into the hardware device itself. The second is the GridTrust Interfacing Device, which incorporates PUF technology and multiple cryptographic signatures. These signatures are cross-checked within a separate hardware positioned between the power grid control center and the legacy power grid device, functioning as an intermediary. While the GridTrust Interfacing Device offers the advantage of being applicable to existing power grid equipment, it may have reduced security if the intermediary component is targeted. On the other hand, the GridTrust Native Device boasts increased security due to protocol integration within a unified form factor. The effectiveness of GridTrust technology has been extensively demonstrated, with multiple external red-team attackers unable to breach GridTrust's security measures. This was observed both in controlled laboratory settings during Phase 1 of the project and in real-world conditions within a City of Marietta substation during Phase 2 of the project.
The DIII-D National Fusion Facility aims to increase the auxiliary heating power for the tokamak by upgrading the Neutral Beam Injection (NBI) system. In collaboration with North Carolina State University, the conventional ‘arc and filament’ NBI ion sources will be converted to inductively coupled plasma (ICP) sources which utilize radio frequency (RF) coupling to maximize reliability for high power operation. In support of this initiative, a full scale test device (SupRISE, Superior Radiofrequency Ion Source Experiment) is currently under construction at the DIII-D Facility. In preparation for the construction of a full scale prototype that can be installed on the DIII-D NBI system, experiments on SupRISE will be conducted to determine the optimal RF frequency for high power coupling, Faraday shield slit configuration, and ICP chamber length. SupRISE is comprised of an approximately 30 x 70 cm quartz dielectric vessel with an internal Faraday shield enclosed in a secondary vacuum chamber to ensure structural stability of the dielectric. Actively cooled front and back plates are designed to reduce the thermal stresses on the plasma facing components and mate with the existing accelerator used by the NBI system at DIII-D. 50 kW of RF power will be coupled to the plasma through the quartz over a variable frequency range of 4-8 MHz to sustain a plasma density of ∼ 10 18 m −3 for a 10 s ON, 210 s OFF duty cycle. Various modelling efforts have been employed to simulate the thermal and stress profiles over the primary components of the SupRISE device as well as the inductance behavior of the RF antenna. These simulation results and the final design for SupRISE will be presented. An additional reduced-scale predecessor ICP source (called RISE) has been used to develop a predictive match model that will be applied to frequency optimization studies on SupRISE. Furthermore, the outcomes of this research and complementary efforts at North Carolina State University are essential for the incorporation of ICP NBI positive ion sources at the DIII-D facility.
Currently, a spectrum of reliability tests are being performed by both device manufacturers and end users. Many of these qualification tests are operated within the device safe-operating-area (SOA), however, the devices often undergo dynamic events in many converter applications that can exceed the SOA boundaries. This paper presents our recent work on quantifying the out-of-SOA robustness of GaN power high-electron-mobility transistors (HEMTs) and SiC power MOSFETs by switching based tests. The unclamped inductive switching stresses are applied to p-gate GaN HEMTs to evaluate their surge-energy and overvoltage robustness. The continuous, hard-switching, turn-off stresses are applied to SiC MOSFETs to evaluate their overvoltage switching robustness. As a result, both experiments demonstrate the robustness of SiC and GaN devices under out-of-SOA switching events, and the physics of degradation and failure are understood.
As an emerging non-volatile memory device technology, Ferroelectric Field-Effect Transistors (FeFETs) can enable low-power, adaptive intelligent system design. However, device dimension and operating voltage dependent reliability issues of scaled FeFETs can ultimately lead to degraded performance in solving machine learning tasks. In this article, detailed experimental characterization of FeFET devices of different dimensions have been carried out to explicitly evaluate the non-ideal behavior in device conductance programming properties like number of programming states, cycle-to-cycle (C2C) variations, device-to-device (D2D) variations, and state retention. A hardware-aware software simulation approach has been adopted to capture the adversarial effects of the non-idealities on recognition accuracy through algorithm-level performance assessment by including them in NeuroSim, a popular neural network hardware simulator, to execute a neural network model considering all other hardware constraints. With the added non-idealities, significant accuracy degradation has been observed compared to the ideal scenarios where D2D variations play the most critical role. Thereafter, feasibility of a variation-aware training method has been evaluated to tackle the accuracy drop.
The integration of power electronics enabled devices and the high penetration of renewable energy drastically increase the complexity of power system operation and control. Power systems are still vulnerable to large-scale blackouts caused by extreme natural events or man-made attacks. With the recent development in artificial intelligence technique, machine learning has shown a processing ability in computational, perceptual and cognitive intelligence. It is an urgent challenge to integrate the advanced machine learning technology and large amount of real-time data from wide area measurement systems and intelligent electronic devices, in order to effectively enhance power system resilience and ensure the reliable and secure operation of power systems. Therefore, this paper aims to systematically review the existing application of machine learning methods on power system resilience enhancement, to expand the interest of researchers and scholars in this topic, and to jointly promote the application of artificial intelligence in the field of power systems.
Tertiary-nuclear power cell utilizes alpha source from which radiated particles strike phosphore which in turn emits photons that are converted to electricity by solar cell. Experiments indicated that device is capable of providing sufficient power for numerous electronic applications where reliability and long life are important.
Past NASA missions to Mars, Jupiter and the outer planets were powered by radioisotope thermal generators (RTGs). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaics (PV) and thermophotovoltaics (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV data base for planetary mission planners and cell designers, we have compiled low intensity low temperature (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate Short Circuit Current (I(sub sc)), Open Circuit Voltage (V(sub os)), and Fill Factor (FF) as a function of temperature and intensity, an accurate prediction of cell performance under the AM0 spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GaInP/GaAs/GaAs, InP, InGaAs/InP, InP/InGaAs/InP, and GaInP. Temperatures range down to as low as -180 C and intensities range from 1 sun down to 0.02 suns. The coefficients presented in this paper represent experimental results and are intended to provide the user with approximate numbers.
Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device's behavior and its static and dynamic behavior. Enhancement-mode device operation is realized with this type of device architecture without the need for any selective area doping. The dynamic thermal behavior of the device is characterized through its short-circuit behavior. Based on the device static and dynamic behavior, it is envisioned that reliable vertical transistors can be fabricated for the power electronics applications.
Perovskite solar cells (PSCs) that have a positive–intrinsic–negative (p–i–n, or often referred to as inverted) structure are becoming increasingly attractive for commercialization owing to their rapid increase in power conversion efficiency, easily scalable fabrication, reliable operation and compatibility with various perovskite-based tandem device configurations. In this report we review key material and device considerations for making highly efficient and stable p–i–n PSCs. First, we summarize key advances in charge transport materials, which were critical to the rapid power conversion efficiency progress. Second, we discuss promising perovskite compositions and fabrication methods. We highlight various additive engineering approaches to improve the perovskite layer as well as interface engineering strategies that target either the buried or top perovskite surface layer. Third, we review progress in tandem devices, focusing on optimization of the interconnection layer. Next, we summarize the status and strategies for improving p–i–n PSC stability, especially considering the challenges of outdoor applications. We also provide prospects for future research directions and challenges.
A number of emerging trends will substantially alter the operation and control of the electric grid over the next several decades. These trends include ensuring resiliency under severe weather events, increasing integration of renewable electricity generation, supporting changing electricity demand patterns, and the improving cost effectiveness of distributed energy resources. To address these challenges, the future “Smart Grid” management will need to transition from centralized to coordinated distributed control paradigm. Reliable operation of the Smart Grid depends on distributed intelligence realized through software applications that run on distributed computing devices attached to the power system to collect data and collaboratively manage resources. However, much of the existing software for Smart Grid-enabled devices is either proprietary or developed with custom solutions, which limits interoperability among the heterogeneous devices and hinders the ability to manage system-level reliability, security, and resiliency requirements. Additionally, this approach makes Smart Grid applications hard to maintain, evolve, verify, and replace; resulting in high development and deployment costs. Further development of the Smart Grid requires a reusable software base-layer to move from hard-coded functionality to a plug-and-play architecture capable of managing system-level objectives and constraints in addition to providing consistent common services across heterogeneous devices and applications. Vanderbilt University, in collaboration with North Carolina State University and Washington State University has developed a foundation ‘software platform’ for developing and deploying robust, reliable, effective and secure software applications for the Smart Grid. The Resilient Information Architecture Platform for the Smart Grid (RIAPS) provides core services for building effective and powerful smart grid applications. It offers unique services for real-time data dissemination, fault tolerance, and coordination across apps distributed over the network.
Benefiting from the superior properties of wide-bandgap semiconductor materials, wide-bandgap power devices demonstrate exceptional switching performance, enabling more efficient and compact power electronics systems. However, ultrafast switching poses challenges to the reliability of the system in terms of severe oscillations and voltage overshoot, electromagnetic interference, and increased risk of partial discharge. By developing advanced power module packaging for fast-switching power devices, the above-mentioned challenges can be mitigated at the packaging level, enabling the full utilization of the fast-switching capability of wide-bandgap devices. Meanwhile, such technology also lays the groundwork for packaging next-generation power devices with even higher blocking voltage and faster switching speed. In this paper, a comprehensive review of ultrafast switching power modules has been made, including the benefits and status of ultrafast switching power modules, challenges brought by ultrafast switching, and promising technologies to address these challenges. In addition, future development trends and research gaps are also discussed in this paper. Furthermore, this review can serve as a reference for future wide-bandgap power module packaging design.
This paper describes modeling and experimental work to design and demonstrate a silicon carbide (SiC), single-side-cooled power module. Two SiC metal-oxide-semiconductor field-effect transistors (MOSFET) were used for each switch position and packaged on a metalized ceramic substrate. Thermal modeling was first conducted to optimize the module packaging to minimize junction-to-fluid thermal resistance and device temperature variations. This procedure identified the optimal device placement and baseplate thickness to maximize thermal performance. A heat exchanger - incorporating impinging jets of water-ethylene glycol - was designed to cool the module's baseplate to minimize thermal resistance and pumping power. The heat exchanger used relatively low fluid velocities (<1.5 m/s) to minimize erosion-corrosion effects and relatively large fluid channel sizes (>=1 mm) to prevent clogging. The power module concept was fabricated, and experiments were conducted to measure its thermal performance. Direct current was used to power the module devices, and junction temperatures were measured via device temperature-sensitive parameters. The experimental results were found to be in good agreement with model predictions (within 2%) and yielded junction-to-fluid thermal resistance values as low as about 15 mm2 K/W at relatively low pumping power values. The results demonstrate the improved performance associated with jet impingement cooling and represent an improvement over existing channel-flow-type cold plates, which can enable improvements to power density and reliability.
In the first decade of the 21st century, the United States began operating three leading Inertial Confinement Fusion (ICF) and High-Energy Density Physics (HEDP) facilities. The National Ignition Facility (NIF) began its quest to first surpass the Lawson Criterion and then reach thermonuclear ignition and thermonuclear gain. The Omega EP (Extended Performance) laser provides unprecedented energy, reliability, and consistency for petawatt (PW)-class laser experiments. The Omega laser continues to support over 1000 ICF and HEDP experiments each year. The Z pulsed power machine is a Z-pinch plasma confinement device that was refurbished to increase current drive and improve reliability. The extreme states of matter created in these new facilities required advancement of many technologies. The most important among these was the significant improvement in instrumentation capabilities needed to diagnose plasma conditions and resulting nuclear products. The instruments needed a better temporal, spatial, and energy resolution. They also needed to be hardened against EMP and radiation. Typical events in an ICF implosion include compressing the deuterium–tritium (DT) fuel to greater than 60 g/cm 3 and heating the DT to a temperature greater than 10 keV (110 000 000 K). The DT atoms react to produce 14 MeV neutrons from a volume with a radius of ~30 μm. When the fuel ignites, the DT burn prop agates into cold fuel and the neutron-emitting region can reach sizes of over 200 μm. Furthermore, the burn typically lasts less than 150 ps, but the burn duration will decrease as the DT yield increases. Burn durations as short as 90 ps have been recorded and are predicted to decrease still further to 20 ps. X-ray imaging diagnostics are needed to measure the acceleration and velocity of the capsule enclosing the DT, where the implosion velocities can reach over 400 km/s.