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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Passivated Contacts for Direct Wafer Product (Final Technical Report)

This TCF project developed a thin-oxide (SiO 2 )/polycrystalline silicon (poly-Si) passivated contact solar cell on CubicPV's (formally 1366 Technologies, Inc.) Direct Wafer® Product (DWP) kerfless wafers. The project used two NREL-developed technologies described in U.S. Patent No. 9,911,873, Hydrogenation of Passivated Contacts and U.S. Patent Application Serial No. 15/890,172, Doped Passivated Contacts . The project was motivated by a potential higher efficiency cell (compared to a PERC cell) using passivated contacts on the ultra-low cost kerfless wafers grown using the Direct Wafer process. The hope was to accelerate market adoption of the cell and wafer by delivering the lowest LCOE in the PV industry. The project tested both n-type and p-type SiO 2 /poly-Si passivated contacts grown by thermal oxidation and plasma enhanced chemical vapor deposition (PECVD) of the poly-Si layer on DWP with varying wafer resistivities. Both deposition techniques are industry standards and thus economically viable methods for commercializing the contacts. The results indicated that both n-type and p-type poly-Si passivated contacts can be formed on polycrystalline DWP wafers, but implied open-circuit voltages (i Voc ) were limited to below 0.65 mV (compared with ~ 730 mV on n-Cz wafers). Diffusion of H to the Si/SiO 2 /poly-Si interface was key to obtaining high i Voc values. In this study, H was diffused from a high-temperature SiN x layer deposited over the poly-Si layer during a high-temperature firing step, similar to one used for screen printed metals. The study concluded that poly-Si passivated contacts on DWP wafers passivated the surface of the wafers as well as PERC passivated surfaces, which use a less expensive dielectric layer stack. The project showed that Direct Wafer Product wafers grown by CubicPV could produce high i Voc values (~0.647 mV), which could produce a cell over 20% efficient with proper processing and metallization. These cells, though not economically viable in 2024 as a stand-alone cell, could be integrated with a wide-bandgap top solar cell to form a two-junction tandem cell that could be viable under certain circumstances. This is because the bottom cell of a 30%, two-terminal tandem only needs to be a 20% cell under one-sun conditions. Thus, the DWP could be an ideal low-cost wafer for tandems. The project also revealed that a TOPCon type cell could be formed on a p-type DWP wafer using a P-diffused emitter and a p-type poly-Si contact. In fact, the p-type version of the poly-Si contact out-performed the n-type version for a variety of wafer resistivities, from highly doped to lowly doped. This curiosity requires more work to understand because on Cz wafers, the n-type poly-Si contact is of much higher quality than the p-type version.

14 SOLAR ENERGY↗
DOE OSTI2024

Direct Metallization with Reactive Inks – Assessment of Reliability and Process Sensitivities

This project will reduce silver consumption in photovoltaic cells by a factor of almost ten – from 95 mg/cell (the median across technologies) to 10 mg/cell. To achieve this goal, we will replace screen-printed silver pastes with contact dispensed reactive inks that produce lower resistivity metallizations at lower temperatures and with thinner films. This project will generate the understanding necessary to scale this reactive ink technology from the bench-scale to commercial throughputs. Specifically, it will combine fundamental understanding on physics and chemistries involved in contact printing of reactive inks with detailed performance and reliability studies to quantify how tightly processing parameters need to be controlled in order to reliably metallize high efficiency solar cells at commercial throughputs of 36,000 cells/hour.

14 SOLAR ENERGY↗
DOE OSTI2026

Towards Commercialization of Low-Cost, Crack-Tolerant, Screen-Printable Metallization by Full-Size Module Testing and Field Characterization

This project is motivated by the need to develop a materials engineering solution to reduce solar module degradation caused by cell cracks. The cell-crack-induced power loss is a long-term degradation mechanism and one of the main causes of solar panel field failures. Cell cracks can occur during module fabrication, transportation, installation, and long-term operation due to thermomechanical stressors. Our team’s internal estimation – based on the national weather pattern, frequency of severe weather, and 39- GW asset survey by Heliolytics – reveals that the cell-crack-induced module degradation translates to lost revenues >$17B over an average 5-year period for solar farm owners and to reduced reliability (<25 years panel lifetime) for solar energy consumers. In response to this challenge, the prime recipient offers a metal matrix composite (MMC) silver paste that is tailor-engineered for screen-printing gridlines and busbars, which serve as the electrical contacts on solar cells. We formulate our MMC paste by adding low-cost (∼0.02¢/WDC for research grade), surface-engineered carbon nanotubes to commercially available silver paste. The MMC paste offers a drop-in, cost-effective solution to cell cracks for solar cell and module manufacturers. The main goal of this project was to conduct field-relevant, module-level analysis and qualification of MMC metallization.

14 SOLAR ENERGY↗
DOE OSTI2022

All-Ceramic Passive Wireless Temperature Sensor Realized by Tin-Doped Indium Oxide (ITO) Electrodes for Harsh Environment Applications

In this work, an all-ceramic passive wireless inductor–capacitor (LC) resonator was presented for stable temperature sensing up to 1200 °C in air. Instead of using conventional metallic electrodes, the LC resonators are modeled and fabricated with thermally stable and highly electroconductive ceramic oxide. The LC resonator was modeled in ANSYS HFSS to operate in a low-frequency region (50 MHz) within 50 × 50 mm geometry using the actual material properties of the circuit elements. The LC resonator was composed of a parallel plate capacitor coupled with a planar inductor deposited on an Al2O3 substrate using screen-printing, and the ceramic pattern was sintered at 1250 °C for 4 h in an ambient atmosphere. The sensitivity (average change in resonant frequency with respect to temperature) from 200–1200 °C was ~170 kHz/°C. The temperature-dependent electrical conductivity of the tin-doped indium oxide (ITO, 10% SnO2 doping) on the quality factor showed an increase of Qf from 36 to 43 between 200 °C and 1200 °C. The proposed ITO electrodes displayed improved sensitivity and quality factor at elevated temperatures, proving them to be an excellent candidate for temperature sensing in harsh environments. The microstructural analysis of the co-sintered LC resonator was performed using a scanning electron microscope (SEM) which showed that there are no cross-sectional and topographical defects after several thermal treatments.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Wireless Passive Ceramic Sensor for Far-Field Temperature Measurement at High Temperatures

A passive wireless high-temperature sensor for far-field applications was developed for stable temperature sensing up to 1000 °C. The goal is to leverage the properties of electroceramic materials, including adequate electrical conductivity, high-temperature resilience, and chemical stability in harsh environments. Initial sensors were fabricated using Ag for operation to 600 °C to achieve a baseline understanding of temperature sensing principles using patch antenna designs. Fabrication then followed with higher temperature sensors made from (In, Sn) O2 (ITO) for evaluation up to 1000 °C. A patch antenna was modeled in ANSYS HFSS to operate in a high-frequency region (2.5–3.5 GHz) within a 50 × 50 mm2 confined geometric area using characteristic material properties. The sensor was fabricated on Al2O3 using screen printing methods and then sintered at 700 °C for Ag and 1200 °C for ITO in an ambient atmosphere. Sensors were evaluated at 600 °C for Ag and 1000 °C for ITO and analyzed at set interrogating distances up to 0.75 m using ultra-wideband slot antennas to collect scattering parameters. The sensitivity (average change in resonant frequency with respect to temperature) from 50 to 1000 °C was between 22 and 62 kHz/°C which decreased as interrogating distances reached 0.75 m.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Near-Field Passive Wireless Sensor for High-Temperature Metal Corrosion Monitoring

This work focuses on the fabrication and evaluation of a passive wireless sensor for the monitoring of the temperature and corrosion of a metal material at high temperatures. An inductor–capacitor (LC) resonator sensor was fabricated through the screen printing of Ag-based inks on dense polycrystalline Al 2 O 3 substrates. The LC design was modeled using the ANSYS HFSS modeling package, with the LC passive wireless sensors operating at frequencies from 70 to 100 MHz. The wireless response of the LC was interrogated and received by a radio frequency signal generator and spectrum analyzer at temperatures from 50 to 800 °C in real time. The corrosion kinetics of the Cu 110 was characterized through thermogravimetric (TGA) analysis and microscopy images, and the oxide thickness growth was then correlated to the wireless sensor signal under isothermal conditions at 800 °C. The results showed that the wireless signal was consistent with the corrosion kinetics and temperature, indicating that these two characteristics can be further deconvoluted in the future. In addition, the sensor also showed a magnitude- and frequency-dependent response to crack/spallation events in the oxide corrosion layer, permitting the in situ wireless identification of these catastrophic events on the metal surface at high temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Investigation of Contact Properties and Device Performance for Bifacial Double-Side Textured Silicon Solar Cells With Polysilicon Based Passivating Contacts

We investigate the impact of the surface morphology on the contact properties of phosphorus doped poly-Si layers. If the poly-Si layer on a textured surface remains intact after high-temperature metallization using a fire-through (FT) silver (Ag) paste, the J0,metal is not expected to increase significantly while the specific contact resistivity can improve with a textured surface. The contact properties of the FT Ag contacts to n+ poly-Si deposited on both textured and planar surfaces are investigated by measuring and evaluating ρc and J0,metal. The reasons for differences in contact resistance and recombination are further investigated with SEM imaging. Solar cells with n-type polysilicon based passivating contacts on the rear side are fabricated and characterized. The scientific approach used, and the insights presented in this work, help to understand the mechanisms and behavior of screen-printed and fired-through contacts to polysilicon layers deposited onto textured silicon surfaces.

Padhamnath, Pradeep (ORCID:0000000202510624)↗
NASA NTRS1974

Metallic oxide switches using thick film technology

Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

Patel, D. N.↗
NASA NTRS1977

Summary of the NASA space photovoltaic research and technology program

Low cost solar cells and arrays with high end-of-life efficiency are evaluated through two approaches: one, to obtain increased device efficiency at no increase in cost and two, to reduce the manufacturing costs of space solar cells and arrays. Technology efforts encompass high efficiency epitaxial cells, high efficiency wraparound contact solar cells, economical diffusion sources, automated cell fabrication and development of easily applied, durable cover glasses. The examination of ion-implanted profile tailored junctions and additional development of screen printed contact technology to cell development are also considered.

Brandhorst, H. W., Jr.↗
NASA NTRS1978

Automated Array Assembly, Phase 2. Low-cost Solar Array Project, Task 4

Work was done to verify the technological readiness of a select process sequence with respect to satisfying the Low Cost Solar Array Project objectives of meeting the designated goals of $.50 per peak watt in 1986 (1975 dollars). The sequence examined consisted of: (1) 3 inches diameter as-sawn Czochralski grown 1:0:0 silicon, (2) texture etching, (3) ion implanting, (4) laser annealing, (5) screen printing of ohmic contacts and (6) sprayed anti-reflective coatings. High volume production projections were made on the selected process sequence. Automated processing and movement of hardware at high rates were conceptualized to satisfy the PROJECT's 500 MW/yr capability. A production plan was formulated with flow diagrams integrating the various processes in the cell fabrication sequence.

Lopez, M.↗
NASA NTRS1979

Development of an Improved High Efficiency Thin Solar Cell

High efficiency cells (up to 14 AMO at 25 C)were fabricated from 10 - 15 ohm-cm silicon by using screen printed aluminum paste as the alloy source for the production of back surface fields. Thick consistency pastes that have been cured prior to a short heat treatment at 850 C were most effective in achieving these efficiency levels.

Lindmayer, J.↗
NASA NTRS1979

Process Development for Automated Solar Cell and Module Production. Task 4: Automated Array Assembly

A baseline sequence for the manufacture of solar cell modules was specified. Starting with silicon wafers, the process goes through damage etching, texture etching, junction formation, plasma edge etch, aluminum back surface field formation, and screen printed metallization to produce finished solar cells. The cells were then series connected on a ribbon and bonded into a finished glass tedlar module. A number of steps required additional developmental effort to verify technical and economic feasibility. These steps include texture etching, plasma edge etch, aluminum back surface field formation, array layup and interconnect, and module edge sealing and framing.

Source record↗
NASA NTRS1979

Automated aray assembly, phase 2

A manufacturing process suitable for the large-scale production of silicon solar array modules at a cost of less than $500/peak kW is described. Factors which control the efficiency of ion implanted silicon solar cells, screen-printed thick film metallization, spray-on antireflection coating process, and panel assembly are discussed. Conclusions regarding technological readiness or cost effectiveness of individual process steps are presented.

Daiello, R. V.↗
NASA NTRS1979

Development of improved wraparound contacts for silicon

A developmental process for fabricating 2 X 4 cm back surface field silicon solar cells featuring wraparound contacts and screen printed dielectric isolation is described. The process was then used to fabricate a number of cells for evaluation and study, as well as to establish the validity of the process sequence. While a number of cells exhibiting relatively good conversion efficiencies were produced, nearly all had low I-V curve factors for the level of efficiencies attained. Cells with conversion efficiencies of more than 15 percent (air mass zero and 25 C) had fill factors of only 0.76. Evidence as to the cause of this has not been conclusive, but is most probably linked to isolation failure in the wraparound dielectric and associated shunting problems.

Thornhill, J. W.↗
NASA NTRS1980

Development of a high efficiency thin silicon solar cell

Significant improvements in open-circuit voltage and conversion efficiency, even on relatively high bulk resistivity silicon, were achieved by using a screen-printed aluminum paste back surface field. A 4 sq cm 50 micron m thick cell was fabricated from textured 10 omega-cm silicon which had an open-circuit voltage of 595 mV and AMO conversion efficiency at 25 C of 14.3%. The best 4 sq cm 50 micron thick cell (2 omega-cm silicon) produced had an open-circuit voltage of 607 mV and an AMO conversion efficiency of 15%. Processing modifications are described which resulted in better front contact integrity and reduced breakage. These modifications were utilized in the thin cell pilot line to fabricate 4 sq cm cells with an average AMO conversion efficiency at 25 C of better than 12.5% and with lot yields as great as 51% of starts; a production rate of 10,000 cells per month was demonstrated. A pilot line was operated which produced large area (25 cm) ultra-thin cells with an average AMO conversion efficiency at 25 deg of better than 11.5% and a lot yield as high as 17%.

Storti, G.↗
NASA NTRS1980

The HEWAC pilot line experience

Advanced silicon solar cells with both electrical contacts on the back side of the cell are described. These high efficiency wrap around contact solar cells (HEWACS) utilize a screen printed dielectric insulation layer to isolate the 'n' and 'p' contacts from each other. Development of a device exhibiting high AMO conversion efficiencies is addressed along with the processing of such cells to a point where cell fabrication can be carried out by production personnel under operating production line conditions.

Gillanders, M.↗