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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

Carbon Nanotube Tip Probes: Stability and Lateral Resolution in Scanning Probe Microscopy and Application to Surface Science to Semiconductors

In this paper we present results on the stability and lateral resolution capability of carbon nanotube (CNT) scanning probes as applied to atomic force microscopy (AFM). Surface topography images of ultra-thin films (2-5 nm thickness) obtained with AFM are used to illustrate the lateral resolution capability of single-walled carbon nanotube probes. Images of metal films prepared by ion beam sputtering exhibit grain sizes ranging from greater than 10 nm to as small as approximately 2 nm for gold and iridium respectively. In addition, imaging stability and lifetime of multi-walled carbon nanotube scanning probes are studied on a relatively hard surface of silicon nitride (Si3N4). AFM images Of Si3N4 surface collected after more than 15 hrs of continuous scanning show no detectable degradation in lateral resolution. These results indicate the general feasibility of CNT tips and scanning probe microscopy for examining nanometer-scale surface features of deposited metals as well as non-conductive thin films. AFM coupled with CNT tips offers a simple and nondestructive technique for probing a variety of surfaces, and has immense potential as a surface characterization tool in integrated circuit manufacturing.

Nguyen, Cattien V.↗
NASA NTRS1993

Engine materials characterization and damage monitoring by using x ray technologies

X ray attenuation measurement systems that are capable of characterizing density variations in monolithic ceramics and damage due to processing and/or mechanical testing in ceramic and intermetallic matrix composites are developed and applied. Noninvasive monitoring of damage accumulation and failure sequences in ceramic matrix composites is used during room-temperature tensile testing. This work resulted in the development of a point-scan digital radiography system and an in situ x ray material testing system. The former is used to characterize silicon carbide and silicon nitride specimens, and the latter is used to image the failure behavior of silicon-carbide-fiber-reinforced, reaction-bonded silicon nitride matrix composites. State-of-the-art x ray computed tomography is investigated to determine its capabilities and limitations in characterizing density variations of subscale engine components (e.g., a silicon carbide rotor, a silicon nitride blade, and a silicon-carbide-fiber-reinforced beta titanium matrix rod, rotor, and ring). Microfocus radiography, conventional radiography, scanning acoustic microscopy, and metallography are used to substantiate the x ray computed tomography findings. Point-scan digital radiography is a viable technique for characterizing density variations in monolithic ceramic specimens. But it is very limited and time consuming in characterizing ceramic matrix composites. Precise x ray attenuation measurements, reflecting minute density variations, are achieved by photon counting and by using microcollimators at the source and the detector. X ray computed tomography is found to be a unique x ray attenuation measurement technique capable of providing cross-sectional spatial density information in monolithic ceramics and metal matrix composites. X ray computed tomography is proven to accelerate generic composite component development. Radiographic evaluation before, during, and after loading shows the effect of preexisting volume flaws on the fracture behavior of composites. Results from one-, three-, five-, and eight-ply ceramic composite specimens show that x ray film radiography can monitor damage accumulation during tensile loading. Matrix cracking, fiber-matrix debonding, fiber bridging, and fiber pullout are imaged throughout the tensile loading of the specimens. In situ film radiography is found to be a practical technique for estimating interfacial shear strength between the silicon carbide fibers and the reaction-bonded silicon nitride matrix. It is concluded that pretest, in situ, and post-test x ray imaging can provide greater understanding of ceramic matrix composite mechanical behavior.

Baaklini, George Y.↗
NASA NTRS2011

CMOS Imager Has Better Cross-Talk and Full-Well Performance

A complementary metal oxide/semiconductor (CMOS) image detector now undergoing development is designed to exhibit less cross-talk and greater full-well capacity than do prior CMOS image detectors of the same type. Imagers of the type in question are designed to operate from low-voltage power supplies and are fabricated by processes that yield device features having dimensions in the deep submicron range. Because of the use of low supply potentials, maximum internal electric fields and depletion widths are correspondingly limited. In turn, these limitations are responsible for increases in cross-talk and decreases in charge-handling capacities. Moreover, for small pixels, lateral depletion cannot be extended. These adverse effects are even more accentuated in a back-illuminated CMOS imager, in which photogenerated charge carriers must travel across the entire thickness of the device. The figure shows a partial cross section of the structure in the device layer of the present developmental CMOS imager. (In a practical imager, the device layer would sit atop either a heavily doped silicon substrate or a thin silicon oxide layer on a silicon substrate, not shown here.) The imager chip is divided into two areas: area C, which contains readout circuits and other electronic circuits; and area I, which contains the imaging (photodetector and photogenerated-charge-collecting) pixel structures. Areas C and I are electrically isolated from each other by means of a trench filled with silicon oxide. The electrical isolation between areas C and I makes it possible to apply different supply potentials to these areas, thereby enabling optimization of the supply potential and associated design features for each area. More specifically, metal oxide semiconductor field-effect transistors (MOSFETs) that are typically included in CMOS imagers now reside in area C and can remain unchanged from established designs and operated at supply potentials prescribed for those designs, while the dopings and the lower supply potentials in area I can be tailored to optimize imager performance. In area I, the device layer includes an n+ -doped silicon layer on which is grown an n-doped silicon layer. A p-doped silicon layer is grown on top of the n -doped layer. The total imaging device thickness is the sum of the thickness of the n+, n, and p layers. A pixel photodiode is formed between a surface n+ implant, a p implant underneath it, the aforementioned p layer, and the n and n+ layers. Adjacent to the diode is a gate for transferring photogenerated charges out of the photodiode and into a floating diffusion formed by an implanted p+ layer on an implanted n-doped region. Metal contact pads are added to the back-side for providing back-side bias.

Pain, Bedabrata↗
NASA NTRS2012

Optical and Scanning Electron Microscopy of the Materials International Space Station Experiment (MISSE) Spacecraft Silicone Experiment

Under a microscope, atomic oxygen (AO) exposed silicone surfaces are crazed and seen as "islands" separated by numerous crack lines, much analogous to mud-tile cracks. This research characterized and compared the degree of AO degradation of silicones by analyzing optical microscope images of samples exposed to low Earth orbit (LEO) AO as part of the Spacecraft Silicone Experiment. The Spacecraft Silicone Experiment consisted of eight DC 93-500 silicone samples exposed to eight different AO fluence levels (ranged from 1.46 to 8.43 10(exp 21) atoms/sq cm) during two different Materials International Space Station Experiment (MISSE) missions. Image analysis software was used to analyze images taken using a digital camera. To describe the morphological degradation of each AO exposed flight sample, three different parameters were selected and estimated: (1) average area of islands was determined and found to be in the 1000 to 3100 sq mm range; (2) total length of crack lines per unit area of the sample surface were determined and found to be in the range of 27 to 59 mm of crack length per sq mm of sample surface; and (3) the fraction of sample surface area that is occupied by crack lines was determined and found to be in the 25 to 56 percent range. In addition, average crack width can be estimated from crack length and crack area measurements and was calculated to be about 10 mm. Among the parameters studied, the fraction of sample surface area that is occupied by crack lines is believed to be most useful in characterizing the degree of silicone conversion to silicates by AO because its value steadily increases with increasing fluence over the entire fluence range. A series of SEM images from the eight samples exposed to different AO fluences suggest a complex sequence of surface stress due to surface shrinkage and crack formation, followed by re-distribution of stress and shrinking rate on the sample surface. Energy dispersive spectra (EDS) indicated that upon AO exposure, carbon content on the surface decreased relatively quickly at the beginning, to 32 percent of the pristine value for the least exposed sample in this set of experiments (1.46 10(exp 21) atoms/sq cm), but then decreased slowly, to 22 percent of the pristine value for the most exposed sample in this set of experiment (8.43 10(exp 21) atoms/sq cm). The oxygen content appears to increase at a slower rate. The least and most AO exposed samples were, respectively, 52 and 150 percent above the pristine values. The silicone samples with the greater AO exposure (7.75 10(exp 21) atoms/sq cm and higher) appear to have a surface layer which contains SiO2 with perhaps small amounts of unreacted silicone, CO and CO2 sealed inside.

Hung, Ching-cheh↗
NASA NTRS2008

Method for implementation of back-illuminated CMOS or CCD imagers

A method for implementation of back-illuminated CMOS or CCD imagers. An oxide layer buried between silicon wafer and device silicon is provided. The oxide layer forms a passivation layer in the imaging structure. A device layer and interlayer dielectric are formed, and the silicon wafer is removed to expose the oxide layer.

Pain, Bedabrata↗
NASA NTRS1991

An abuttable CCD imager for visible and X-ray focal plane arrays

A frame-transfer silicon charge-coupled-device (CCD) imager has been developed that can be closely abutted to other imagers on three sides of the imaging array. It is intended for use in multichip arrays. The device has 420 x 420 pixels in the imaging and frame-store regions and is constructed using a three-phase triple-polysilicon process. Particular emphasis has been placed on achieving low-noise charge detection for low-light-level imaging in the visible and maximum energy resolution for X-ray spectroscopic applications. Noise levels of 6 electrons at 1-MHz and less than 3 electrons at 100-kHz data rates have been achieved. Imagers have been fabricated on 1000-Ohm-cm material to maximize quantum efficiency and minimize split events in the soft X-ray regime.

Burke, Barry E.↗
DOE OSTI2021

A time-resolved imaging system for the diagnosis of x-ray self-emission in high energy density physics experiments

A diagnostic capable of recording spatially and temporally resolved x-ray self-emission data was developed to characterize experiments on the MAGPIE pulsed-power generator. The diagnostic used two separate imaging systems: a pinhole imaging system with two-dimensional spatial resolution and a slit imaging system with one-dimensional spatial resolution. The two-dimensional imaging system imaged light onto the image plate. The one-dimensional imaging system imaged light onto the same piece of image plate and a linear array of silicon photodiodes. This design allowed the cross-comparison of different images, allowing a picture of the spatial and temporal distribution of x-ray self-emission to be established. The design was tested in a series of pulsed-power-driven magnetic-reconnection experiments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1961

A Study of the Oxidation of Materials in an ARC-Image Furnace

A series of tests on silicon carbide, graphite, nylon, Bakelite, Fiberglas phenolic, and ammonium chloride has been conducted in an arc-image furnace, with radiant heat fluxes at the specimen surfaces ranging from 100 to 1,000 Btu per square foot-sec. The effects of radiant heat flux and concentration of oxygen in the specimen environment on the rate of material loss were determined. It was found that for the upper half of the heat-flux range the rate-controlling process for materials that oxidize was the diffusion rate of oxygen to the specimen surface.

Wilson, R. Gale↗
NASA NTRS1971

The silicon vidicon: Integration, storage and slow scan capability - Experimental observation of a secondary mode of operation.

Description of the performance of the silicon diode array vidicon - an imaging sensor which possesses wide spectral response, high quantum efficiency, and linear response. These characteristics, in addition to its inherent ruggedness, simplicity, and long-term stability and operating life make this device potentially of great usefulness for ground-base and spaceborne planetary and stellar imaging applications. However, integration and charged storage for periods greater than approximately five seconds are not possible at room temperature because of diode saturation from dark current buildup. Since dark current can be reduced by cooling, measurements were made in the range from -65 to 25 C. Results are presented on the extension of integration, storage, and slow scan capabilities achievable by cooling. Integration times in excess of 20 minutes were achieved at the lowest temperatures. The measured results are compared with results obtained with other types of sensors and the advantages of the silicon diode array vidicon for imaging applications are discussed.

Ando, K. J.↗
DOE OSTI2022

Degradation of Edge-Defined Film-Fed Silicon Glass–Glass Modules on Florida Rooftop After 22 Years

Thin silicon (< 100 μm) adoption can provide significantly lower cost. Kerfless technologies provide thin wafers while preventing material from being wasted. Understanding how this family of processing influences module reliability is important. A set of four edge-defined film-fed growth (EFG) silicon modules from a ten-module system in Florida is measured after 22 years of exposure. Power loss rates of 0.58–0.78% year -1 are measured for three modules, while a rate of 1.32% is measured for a module with severe delamination and corrosion. Short-circuit current degrades between 10.7% and 13.1% for all modules. Further, the losses are primarily optical and recombination based; however, series and shunt resistance effects play a non-negligible role. Pre-existing recombination losses exist but are exacerbated via degradation. Optical losses in short-circuit current are due in part to encapsulant yellowing. Electroluminescence (EL) images display the effects of processing on bulk quality by clearly showing lines of alternating brightness along the wafer length. To the authors’ knowledge, this is the first article displaying suns–V OC data, effective lifetime versus excess carrier density data, and module EL images for EFG silicon-based modules.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Ambient Tip-Enhanced Photoluminescence with 5 nm Spatial Resolution

We achieve record spatial resolution in ambient tip-enhanced photoluminescence (TEPL) from CdSe/ZnS semiconductor quantum dots (QDs). Our approach only takes advantage of surface roughness at the apex of a sputtered plasmonic gold probe. When irradiated with visible light (633 and 532 nm lasers), nano-corrugated regions of the apex of an Au tip support 5-nm spatial resolution in TEPL imaging of QD aggregates on silicon. The reproducibility of our observations is illustrated using different plasmonic probes and samples. The origin of the observed near-field contrast, underlying the demonstrated high spatial resolution in TEPL, is discussed in the context of field enhancement at the metal tip-fluorophore interface.

Chemical Dynamics Initiative↗
NASA NTRS2019

Highly Absorptive Pupil Mask Fabricated with Black Silicon

Many of NASA’s direct imaging of exoplanet missions and projects require fabricated coronagraph masks to control scattering and diffraction of light. The designed, patterned mask intended for the coronagraphic testbeds are highly absorptive in the visible range on non-metallic regions. In this work, we employed the cryogenic etching process to fabricate black silicon (BSi) to achieve a high aspect ratio (HAR) structures with higher etch rate than conventional reactive ion etching (REI). Recent bidirectional reflectance distribution function (BRDF) measurements of uniformly etched BSi on silicon wafer show highly diffusive BSi with a specular reflective component in the orders of seven magnitudes lower than the total hemispherical reflectance when the polarized or non-polarized incident beam is used.

black-silicon↗
NASA NTRS2019

Highly Absorptive Pupil Mask Fabricated with Black Silicon

Many of NASA’s direct imaging of exoplanet missions and projects require fabricated coronagraph masks to control scattering and diffraction of light. The designed, patterned mask intended for the coronagraphic testbeds are highly absorptive in the visible range on non-metallic regions. In this work, we employed the cryogenic etching process to fabricate black silicon (BSi) to achieve a high aspect ratio (HAR) structures with higher etch rate than conventional reactive ion etching (REI). Recent bidirectional reflectance distribution function (BRDF) measurements of uniformly etched BSi on silicon wafer show highly diffusive BSi with a specular reflective component in the orders of seven magnitudes lower than the total hemispherical reflectance when the polarized or non-polarized incident beam is used.

BRDF↗
NASA NTRS1995

Traffic Monitor

Intelligent Vision Systems, Inc. (InVision) needed image acquisition technology that was reliable in bad weather for its TDS-200 Traffic Detection System. InVision researchers used information from NASA Tech Briefs and assistance from Johnson Space Center to finish the system. The NASA technology used was developed for Earth-observing imaging satellites: charge coupled devices, in which silicon chips convert light directly into electronic or digital images. The TDS-200 consists of sensors mounted above traffic on poles or span wires, enabling two sensors to view an intersection; a "swing and sway" feature to compensate for movement of the sensors; a combination of electronic shutter and gain control; and sensor output to an image digital signal processor, still frame video and optionally live video.

Source record↗
NASA NTRS2009

SOI CMOS Imager with Suppression of Cross-Talk

A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

Pain, Bedabrata↗
DOE OSTI2021

Deep learning-based segmentation of lithium-ion battery microstructures enhanced by artificially generated electrodes

Accurate 3D representations of lithium-ion battery electrodes, in which the active particles, binder and pore phases are distinguished and labeled, can assist in understanding and ultimately improving battery performance. Here, we demonstrate a methodology for using deep-learning tools to achieve reliable segmentations of volumetric images of electrodes on which standard segmentation approaches fail due to insufficient contrast. We implement the 3D U-Net architecture for segmentation, and, to overcome the limitations of training data obtained experimentally through imaging, we show how synthetic learning data, consisting of realistic artificial electrode structures and their tomographic reconstructions, can be generated and used to enhance network performance. We apply our method to segment x-ray tomographic microscopy images of graphite-silicon composite electrodes and show it is accurate across standard metrics. We then apply it to obtain a statistically meaningful analysis of the microstructural evolution of the carbon-black and binder domain during battery operation.

25 ENERGY STORAGE↗