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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Studies Of Single-Event-Upset Models

Report presents latest in series of investigations of "soft" bit errors known as single-event upsets (SEU). In this investigation, SEU response of low-power, Schottky-diode-clamped, transistor/transistor-logic (TTL) static random-access memory (RAM) observed during irradiation by Br and O ions in ranges of 100 to 240 and 20 to 100 MeV, respectively. Experimental data complete verification of computer model used to simulate SEU in this circuit.

Zoutendyk, J. A.↗
NASA NTRS1988

Measuring Critical Charges For Single-Event Upsets

Concept for determining susceptibility of integrated circuits to single-event upsets (SEU's) based on direct measurement of critical charge causing upset. Test circuit is modified version of standard complementary metal-oxide/semiconductor static cell. Contains six transistors, connected to form latch that retains state of cell set by input pulses. Makes possible to evaluate vulnerability to SEU during design and development of digital equipment.

Buehler, Martin G.↗
NASA NTRS1988

New Mode For Single-Event Upsets

Report presents theory and experimental data regarding newly discovered mode for single-event upsets, (SEU's) in complementary metal-oxide/semiconductor, static random-access memories, CMOS SRAM's. SEU cross sections larger than those expected from previously known modes given rise to speculation regarding additional mode, and subsequent cross-section measurements appear to confirm speculation.

Zoutendyk, John A.↗
NASA NTRS1989

Spread Of Charge From Ion Tracks In Integrated Circuits

Single-event upsets (SEU's) propagate to adjacent cells in integrated memory circuits. Findings of experiments in lateral transport of electrical-charge carriers from ion tracks in 256K dynamic randon-access memories (DRAM's). As dimensions of integrated circuits decrease, vulnerability to SEU's increases. Understanding gained enables design of less vulnerable circuits.

Zoutendyk, John A.↗
NASA NTRS1988

Heavy ion induced Single Event Phenomena (SEP) data for semiconductor devices from engineering testing

The accumulation of JPL data on Single Event Phenomena (SEP), from 1979 to August 1986, is presented in full report format. It is expected that every two years a supplement report will be issued for the follow-on period. This data for 135 devices expands on the abbreviated test data presented as part of Refs. (1) and (3) by including figures of Single Event Upset (SEU) cross sections as a function of beam Linear Energy Transfer (LET) when available. It also includes some of the data complied in the JPL computer in RADATA and the SPACERAD data bank. This volume encompasses bipolar and MOS (CMOS and MHNOS) device data as two broad categories for both upsets (bit-flips) and latchup. It also includes comments on less well known phenomena, such as transient upsets and permanent damage modes.

Nichols, Donald K.↗
NASA NTRS1989

Effects of cosmic rays on single event upsets

Assistance was provided to the Brookhaven Single Event Upset (SEU) Test Facility. Computer codes were developed for fragmentation and secondary radiation affecting Very Large Scale Integration (VLSI) in space. A computer controlled CV (HP4192) test was developed for Terman analysis. Also developed were high speed parametric tests which are independent of operator judgment and a charge pumping technique for measurement of D(sub it) (E). The X-ray secondary effects, and parametric degradation as a function of dose rate were simulated. The SPICE simulation of static RAMs with various resistor filters was tested.

Venable, D. D.↗
NASA NTRS1991

A machine independent expert system for diagnosing environmentally induced spacecraft anomalies

A new rule-based, machine independent analytical tool for diagnosing spacecraft anomalies, the EnviroNET expert system, was developed. Expert systems provide an effective method for storing knowledge, allow computers to sift through large amounts of data pinpointing significant parts, and most importantly, use heuristics in addition to algorithms which allow approximate reasoning and inference, and the ability to attack problems not rigidly defines. The EviroNET expert system knowledge base currently contains over two hundred rules, and links to databases which include past environmental data, satellite data, and previous known anomalies. The environmental causes considered are bulk charging, single event upsets (SEU), surface charging, and total radiation dose.

Rolincik, Mark J.↗
NASA NTRS1991

Heavy-ion induced single-event upset in integrated circuits

The cosmic ray environment in space can affect the operation of Integrated Circuit (IC) devices via the phenomenon of Single Event Upset (SEU). In particular, heavy ions passing through an IC can induce sufficient integrated current (charge) to alter the state of a bistable circuit, for example a memory cell. The SEU effect is studied in great detail in both static and dynamic memory devices, as well as microprocessors fabricated from bipolar, Complementary Metal Oxide Semiconductor (CMOS) and N channel Metal Oxide Semiconductor (NMOS) technologies. Each device/process reflects its individual characteristics (minimum scale geometry/process parameters) via a unique response to the direct ionization of electron hole pairs by heavy ion tracks. A summary of these analytical and experimental SEU investigations is presented.

Zoutendyk, J. A.↗
NASA NTRS1990

Single event induced transients in I/O devices - A characterization

The results of single-event upset (SEU) testing performed to evaluate the parametric transients, i.e., amplitude and duration, in several I/O devices, and the impact of these transients are discussed. The failure rate of these devices is dependent on the susceptibility of interconnected devices to the resulting transient change in the output of the I/O device. This failure rate, which is a function of the susceptibility of the interconnected device as well as the SEU response of the I/O device itself, may be significantly different from an upset rate calculated without taking these factors into account. The impact at the system level is discussed by way of an example.

Newberry, D. M.↗
NASA NTRS1992

An expert system for diagnosing environmentally induced spacecraft anomalies

A new rule-based, machine independent analytical tool was designed for diagnosing spacecraft anomalies using an expert system. Expert systems provide an effective method for saving knowledge, allow computers to sift through large amounts of data pinpointing significant parts, and most importantly, use heuristics in addition to algorithms, which allow approximate reasoning and inference and the ability to attack problems not rigidly defined. The knowledge base consists of over two-hundred (200) rules and provides links to historical and environmental databases. The environmental causes considered are bulk charging, single event upsets (SEU), surface charging, and total radiation dose. The system's driver translates forward chaining rules into a backward chaining sequence, prompting the user for information pertinent to the causes considered. The use of heuristics frees the user from searching through large amounts of irrelevant information and allows the user to input partial information (varying degrees of confidence in an answer) or 'unknown' to any question. The modularity of the expert system allows for easy updates and modifications. It not only provides scientists with needed risk analysis and confidence not found in algorithmic programs, but is also an effective learning tool, and the window implementation makes it very easy to use. The system currently runs on a Micro VAX II at Goddard Space Flight Center (GSFC). The inference engine used is NASA's C Language Integrated Production System (CLIPS).

Rolincik, Mark↗
NASA NTRS1993

Clementine Sensor Processing System

The design of the DSPSE Satellite Controller (DSC) is baselined as a single-string satellite controller. The DSC performs two main functions: health and maintenance of the spacecraft; and image capture, storage, and playback. The DSC contains two processors: a radiation-hardened Mil-Std-1750, and a commercial R3000. The Mil-Std-1750 processor performs all housekeeping operations, while the R3000 is mainly used to perform the image processing functions associated with the navigation functions, as well as performing various experiments. The DSC also contains a data handling unit (DHU) used to interface to various spacecraft imaging sensors and to capture, compress, and store selected images onto the solid-state data recorder. The development of the DSC evolved from several key requirements; the DSPSE satellite was to do the following: (1) have a radiation-hardened spacecraft control system and be immune to single-event upsets (SEU's); (2) use an R3000-based processor to run the star tracker software that was developed by SDIO (due to schedule and cost constraints, there was no time to port the software to a radiation-hardened processor); and (3) fly a commercial processor to verify its suitability for use in a space environment. In order to enhance the DSC reliability, the system was designed with multiple processing paths. These multiple processing paths provide for greater tolerance to various component failures. The DSC was designed so that all housekeeping processing functions are performed by either the Mil-Std-1750 processor or the R3000 processor. The image capture and storage is performed either by the DHU or the R3000 processor.

Feldstein, A. A.↗
NASA NTRS1993

LET spectra measurements of charged particles in the P0006 experiment on LDEF

Measurements are under way of the charged particle radiation environment of the Long Duration Exposure Facility (LDEF) satellite using stacks of plastic nuclear track detectors (PNTD's) placed in different locations of the satellite. In the initial work the charge, energy, and linear energy transfer (LET) spectra of charged particles were measured with CR-39 double layer PNTD's located on the west side of the satellite (Experiment P0006). Primary and secondary stopping heavy ions were measured separately from the more energetic particles. Both trapped and galactic cosmic ray (GCR) particles are included, with the latter component being dominated by relativistic iron particles. The results from the P0006 experiment will be compared with similar measurements in other locations on LDEF with different orientation and shielding conditions. The remarkably detailed investigation of the charged particle radiation environment of the LDEF satellite will lead to a better understanding of the radiation environment of the Space Station Freedom. It will enable more accurate prediction of single event upsets (SEU's) in microelectronics and, especially, more accurate assessment of the risk - contributed by different components of the radiation field (GCR's, trapped protons, secondaries and heavy recoils, etc.) - to the health and safety of crew members.

Benton, E. V.↗
NASA NTRS1993

An on-line expert system for diagnosing environmentally induced spacecraft anomalies using CLIPS

A new rule-based, expert system for diagnosing spacecraft anomalies is under development. The knowledge base consists of over two-hundred rules and provide links to historical and environmental databases. Environmental causes considered are bulk charging, single event upsets (SEU), surface charging, and total radiation dose. The system's driver translates forward chaining rules into a backward chaining sequence, prompting the user for information pertinent to the causes considered. The use of heuristics frees the user from searching through large amounts of irrelevant information (varying degrees of confidence in an answer) or 'unknown' to any question. The expert system not only provides scientists with needed risk analysis and confidence estimates not available in standard numerical models or databases, but it is also an effective learning tool. In addition, the architecture of the expert system allows easy additions to the knowledge base and the database. For example, new frames concerning orbital debris and ionospheric scintillation are being considered. The system currently runs on a MicroVAX and uses the C Language Integrated Production System (CLIPS).

Lauriente, Michael↗
NASA NTRS1992

Charge collection at large angles of incidence

Charge collection exhibited by p-n junctions, which have at least one small dimension, deviates from the geometric assumptions commonly used in SEU (single event upset) testing. The amount of charge collected did not increase with the secant of the angle of incidence. The number of events under the peak in the charge collection spectrum did not decrease as the cosine of the angle of incidence. Both the position of the peak and the number of events under the peak measured at a given angle of incidence depended upon which symmetry axis of the device was chosen to be the axis of rotation.

Mcnulty, P. J.↗
NASA NTRS1992

Charge generation by heavy ions in power MOSFETs, burnout space predictions, and dynamic SEB sensitivity

The transport, energy loss, and charge production of heavy ions in the sensitive regions of IRF 150 power MOSFETs are described. The dependence and variation of transport parameters with ion type and energy relative to the requirements for single event burnout in this part type are discussed. Test data taken with this power MOSFET are used together with analyses by means of a computer code of the ion energy loss and charge production in the device to establish criteria for burnout and parameters for space predictions. These parameters are then used in an application to predict burnout rates in a geostationary orbit for power converters operating in a dynamic mode. Comparisons of rates for different geometries in simulating SEU (single event upset) sensitive volumes are presented.

Stassinopoulos, E. G.↗
NASA NTRS1994

Making A D-Latch Sensitive To Alpha Particles

Standard complementary metal oxide/semiconductor (CMOS) D-latch integrated circuit modified to increase susceptibility to single-event upsets (SEU's) (changes in logic state) caused by impacts of energetic alpha particles. Suitable for use in relatively inexpensive bench-scale SEU tests of itself and of related integrated circuits like static random-access memories.

Buehler, Martin G.↗
NASA NTRS1993

Single event effects and laser simulation studies

The single event upset (SEU) linear energy transfer threshold (LETTH) of radiation hardened 64K Static Random Access Memories (SRAM's) was measured with a picosecond pulsed dye laser system. These results were compared with standard heavy ion accelerator (Brookhaven National Laboratory (BNL)) measurements of the same SRAM's. With heavy ions, the LETTH of the Honeywell HC6364 was 27 MeV-sq cm/mg at 125 C compared with a value of 24 MeV-sq cm/mg obtained with the laser. In the case of the second type of 64K SRAM, the IBM640lCRH no upsets were observed at 125 C with the highest LET ions used at BNL. In contrast, the pulsed dye laser tests indicated a value of 90 MeV-sq cm/mg at room temperature for the SEU-hardened IBM SRAM. No latchups or multiple SEU's were observed on any of the SRAM's even under worst case conditions. The results of this study suggest that the laser can be used as an inexpensive laboratory SEU prescreen tool in certain cases.

Kim, Q.↗
NASA NTRS1991

NASA Space Engineering Research Center for VLSI systems design

This annual review reports the center's activities and findings on very large scale integration (VLSI) systems design for 1990, including project status, financial support, publications, the NASA Space Engineering Research Center (SERC) Symposium on VLSI Design, research results, and outreach programs. Processor chips completed or under development are listed. Research results summarized include a design technique to harden complementary metal oxide semiconductors (CMOS) memory circuits against single event upset (SEU); improved circuit design procedures; and advances in computer aided design (CAD), communications, computer architectures, and reliability design. Also described is a high school teacher program that exposes teachers to the fundamentals of digital logic design.

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