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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

The solar flare heavy ion environment for single-event upsets - A summary of observations over the last solar cycle, 1973-1983

A summary of observations of the flux of 25 to 400 MeV/nucleon heavy ions from solar flares is presented covering the period from late 1973 to early 1984. Distributions of flare occurrence frequency versus fluence, energy spectra, and composition are presented for the 30 events observed during this period, to quantify the variability of the heavy ion environment. A comparison of these data to a model environment suggests some refinements to the model. LET spectra based on the worst case flare observed are presented to illustrate the significance of the flare ion distribution and the importance of accurate shielding estimates.

Chenette, D. L.↗
NASA NTRS1984

The Single Event Upset (SEU) response to 590 MeV protons

The presence of high-energy protons in cosmic rays, solar flares, and trapped radiation belts around Jupiter poses a threat to the Galileo project. Results of a test of 10 device types (including 1K RAM, 4-bit microP sequencer, 4-bit slice, 9-bit data register, 4-bit shift register, octal flip-flop, and 4-bit counter) exposed to 590 MeV protons at the Swiss Institute of Nuclear Research are presented to clarify the picture of SEU response to the high-energy proton environment of Jupiter. It is concluded that the data obtained should remove the concern that nuclear reaction products generated by protons external to the device can cause significant alteration in the device SEU response. The data also show only modest increases in SEU cross section as proton energies are increased up to the upper limits of energy for both the terrestrial and Jovian trapped proton belts.

Nichols, D. K.↗
NASA NTRS1987

Experimental evidence for a new single-event upset (SEU) mode in a CMOS SRAM obtained from model verification

Modeling of SEU has been done in a CMOS static RAM containing 1-micron-channel-length transistors fabricated from a p-well epilayer process using both circuit-simulation and numerical-simulation techniques. The modeling results have been experimentally verified with the aid of heavy-ion beams obtained from a three-stage tandem van de Graaff accelerator. Experimental evidence for a novel SEU mode in an ON n-channel device is presented.

Zoutendyk, J. A.↗
NASA NTRS1987

Single-event upset (SEU) in a DRAM with on-chip error correction

Results are given of SEU measurements on 256K dynamic RAMs with on-chip error correction. They are claimed to be the first ever reported. A (12/8) Hamming error-correcting code was incorporated in the layout. Physical separation of the bits in each code word was used to guard against multiple bits being disrupted in any given word. Significant reduction in observed errors is reported.

Zoutendyk, J. A.↗
NASA NTRS1987

Single event upset (SEU) testing at JPL

It is believed that the increase in SEUs with more modern devices may have serious consequences for future space missions. The physics behind an SEU is discussed as well as SEU test philosophy and equipment, and testing results. It is concluded that the problem may be ameliorated by careful device selection and the use of redundancy or error correction.

Coss, James R.↗
NASA NTRS1988

Investigation of single-event upset (SEU) in an advanced bipolar process

An extensive analytical and experimental study SEU in an advanced silicon bipolar process was made. The modeling used process and device parameters to model the SEU charge, collection, and circuit response derived from a special version of PISCES in cylindrical coordinates and SPICE, respectively. Data are reported for test cells of various sizes.

Zoutendyk, John A.↗
NASA NTRS2006

Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors

SEU from heavy-ions is measured for SOI PowerPC microprocessors. Results for 0.13 micron PowerPC with 1.1V core voltages increases over 1.3V versions. This suggests that improvement in SEU for scaled devices may be reversed. In recent years there has been interest in the possible use of unhardened commercial microprocessors in space because of their superior performance compared to hardened processors. However, unhardened devices are susceptible to upset from radiation space. More information is needed on how they respond to radiation before they can be used in space. Only a limited number of advanced microprocessors have been subjected to radiation tests, which are designed with lower clock frequencies and higher internal core voltage voltages than recent devices [1-6]. However the trend for commercial Silicon-on-insulator (SOI) microprocessors is to reduce feature size and internal core voltage and increase the clock frequency. Commercial microprocessors with the PowerPC architecture are now available that use partially depleted SOI processes with feature size of 90 nm and internal core voltage as low as 1.0 V and clock frequency in the GHz range. Previously, we reported SEU measurements for SOI commercial PowerPCs with feature size of 0.18 and 0.13 m [7, 8]. The results showed an order of magnitude reduction in saturated cross section compared to CMOS bulk counterparts. This paper examines SEUs in advanced commercial SOI microprocessors, focusing on SEU sensitivity of D-Cache and hangs with feature size and internal core voltage. Results are presented for the Motorola SOI processor with feature sizes of 0.13 microns and internal core voltages of 1.3 and 1.1 V. These results are compared with results for the Motorola SOI processors with feature size of 0.18 microns and internal core voltage of 1.6 and 1.3 V.

Irom, Farokh↗
NASA NTRS1993

Single Event Upset Behavior of CMOS Static RAM Cells

An improved state-space analysis of the CMOS static RAM cell is presented. Introducing theconcept of the dividing line, the critical charge for heavy-ion-induced upset of memory cells can becalculated considering symmetrical as well as asymmetrical capacitive loads. From the criticalcharge, the upset-rate per bit-day for static RAMs can be estimated.

Lieneweg, Udo↗
NASA NTRS2009

Radiation tolerant combinational logic cell

A system has a reduced sensitivity to Single Event Upset and/or Single Event Transient(s) compared to traditional logic devices. In a particular embodiment, the system includes an input, a logic block, a bias stage, a state machine, and an output. The logic block is coupled to the input. The logic block is for implementing a logic function, receiving a data set via the input, and generating a result f by applying the data set to the logic function. The bias stage is coupled to the logic block. The bias stage is for receiving the result from the logic block and presenting it to the state machine. The state machine is coupled to the bias stage. The state machine is for receiving, via the bias stage, the result generated by the logic block. The state machine is configured to retain a state value for the system. The state value is typically based on the result generated by the logic block. The output is coupled to the state machine. The output is for providing the value stored by the state machine. Some embodiments of the invention produce dual rail outputs Q and Q'. The logic block typically contains combinational logic and is similar, in size and transistor configuration, to a conventional CMOS combinational logic design. However, only a very small portion of the circuits of these embodiments, is sensitive to Single Event Upset and/or Single Event Transients.

Maki, Gary R.↗
NASA NTRS1989

Effects of space radiation on electronic microcircuits

The single event effects or phenomena (SEP), which so far have been observed as events falling on one or another of the SE classes: Single Event Upset (SEU), Single Event Latchup (SEL) and Single Event Burnout (SEB), are examined. Single event upset is defined as a lasting, reversible change in the state of a multistable (usually bistable) electronic circuit such as a flip-flop or latch. In a computer memory, SEUs manifest themselves as unexplained bit flips. Since latchup is in general caused by a single event of short duration, the single event part of the SEL term is superfluous. Nevertheless, it is used customarily to differentiate latchup due to a single heavy charged particle striking a sensitive cell from more ordinary kinds of latchup. Single event burnout (SEB) refers usually to total instantaneous failure of a power FET when struck by a single particle, with the device shorting out the power supply. An unforeseen failure of these kinds can be catastrophic to a space mission, and the possibilities are discussed.

Kolasinski, W. A.↗
NASA NTRS2006

Non Radiation Hardened Microprocessors in Spaced Based Remote Sensing Systems

The CALIPSO (Cloud-Aerosol Lidar and Infrared Pathfinder Satellite Observations) mission is a comprehensive suite of active and passive sensors including a 20Hz 230mj Nd:YAG lidar, a visible wavelength Earth-looking camera and an imaging infrared radiometer. CALIPSO flies in formation with the Earth Observing System Post-Meridian (EOS PM) train, provides continuous, near-simultaneous measurements and is a planned 3 year mission. CALIPSO was launched into a 98 degree sun synchronous Earth orbit in April of 2006 to study clouds and aerosols and acquires over 5 gigabytes of data every 24 hours. The ground track of one CALIPSO orbit as well as high and low intensity South Atlantic Anomaly outlines is shown. CALIPSO passes through the SAA several times each day. Spaced based remote sensing systems that include multiple instruments and/or instruments such as lidar generate large volumes of data and require robust real-time hardware and software mechanisms and high throughput processors. Due to onboard storage restrictions and telemetry downlink limitations these systems must pre-process and reduce the data before sending it to the ground. This onboard processing and realtime requirement load may mean that newer more powerful processors are needed even though acceptable radiation-hardened versions have not yet been released. CALIPSO's single board computer payload controller processor is actually a set of four (4) voting non-radiation hardened COTS Power PC 603r's built on a single width VME card by General Dynamics Advanced Information Systems (GDAIS). Significant radiation concerns for CALIPSO and other Low Earth Orbit (LEO) satellites include the South Atlantic Anomaly (SAA), the north and south poles and strong solar events. Over much of South America and extending into the South Atlantic Ocean the Van Allen radiation belts dip to just 200-800km and spacecraft entering this area are subjected to high energy protons and experience higher than normal Single Event Upset (SEU) and Single Event Latch-up (SEL) rates. Although less significant, spacecraft flying in the area around the poles experience similar upsets. Finally, powerful solar proton events in the range of 10MeV/10pfu to 100MeV/1pfu as are forecasted and tracked by NOAA's Space Environment Center in Colorado can result in Single Event Upset (SEU), Single Event Latch-up (SEL) and permanent failures such as Single Event Gate Rupture (SEGR) in some technologies. (Galactic Cosmic Rays (GCRs) are another source, especially for gate rupture) CALIPSO mitigates common radiation concerns in its data handling through the use of redundant processors, radiation-hardened Application Specific Integrated Circuits (ASIC), hardware-based Error Detection and Correction (EDAC), processor and memory scrubbing, redundant boot code and mirrored files. After presenting a system overview this paper will expand on each of these strategies. Where applicable, related on-orbit data collected since the CALIPSO initial boot on May 4, 2006 will be noted.

Decoursey, Robert J.↗
NASA NTRS1992

Shortcomings in ground testing, environment simulations, and performance predictions for space applications

This paper addresses the issues involved in radiation testing of devices and subsystems to obtain the data that are required to predict the performance and survivability of satellite systems for extended missions in space. The problems associated with space environmental simulations, or the lack thereof, in experiments intended to produce information to describe the degradation and behavior of parts and systems are discussed. Several types of radiation effects in semiconductor components are presented, as for example: ionization dose effects, heavy ion and proton induced Single Event Upsets (SEUs), and Single Event Transient Upsets (SETUs). Examples and illustrations of data relating to these ground testing issues are provided. The primary objective of this presentation is to alert the reader to the shortcomings, pitfalls, variabilities, and uncertainties in acquiring information to logically design electronic subsystems for use in satellites or space stations with long mission lifetimes, and to point out the weaknesses and deficiencies in the methods and procedures by which that information is obtained.

Stassinopoulos, E. G.↗
NASA NTRS2006

Single Event Effects Test Results for the Actel ProASIC Plus and Altera Stratix-II Field Programmable Gate Arrays

This work describes radiation testing of Actel's ProASIC Plus and Altera's Stratix-II FPGAs. The Actel Device Under Test (DUT) was a ProASIC Plus APA300-PQ208 nonvolatile, field reprogrammable device which is based on a 0.22micron flash-based LVCMOS technology. Limited investigation has taken place into flash based FPGA technologies, therefore this test served as a preliminary reference point for various SEE behaviors. The Altera DUT was a Stratix-II EP2S60F1020C4. Single Event Upset (SEU) and Single Event Latchup (SEL) were the focus of these studies. For the Actel, a latchup test was done at an effective LET of 75.0 MeV-sq cm/mg at room temperature, and no latchup was detected when irradiated to a total fluence of 1 x 10(exp 7) particles/sq cm. The Altera part was shown to latchup at room temperature.

heavy ions↗
NASA NTRS1998

RH1020 Single Event Clock Upset Summary Report

This report summarizes the testing and analysis of "single event clock upset' in the RH1020. Also included are SEU-rate predictions and design recommendations for risk analysis and reduction. The subject of "upsets" in the RH1020 is best understood by using a model consisting of a global clock buffer and a D-type flip-flop as the basic memory unit. The RH1020 is built on the ACT 1 family architecture. As such, it has one low-skew global clock buffer with a TTL-level input threshold that is accessed via a single dedicated pin. The clock signal is driven to full CMOS levels, buffered, and sent to individual row buffers with one buffer per channel. For low-skew performance, the outputs of all of the RH1020 row buffers are shorted together via metal lines, as is done in the A1020B. All storage in the RH1020 consists of routed flip-flops, constructed with multiplexors and feedback through the routing segments. A simple latch can be constructed from a single (combinatorial or C) module; an edge-triggered flip-flop is constructed using two concatenated latches. There is no storage in the I/O modules. The front end of the clock buffering circuitry, at a common point relative to the row buffer, is a sub-circuit that was determined to be the most susceptible to heavy ions. This is due, in part, to its smaller transistors compared to the rest of the circuitry. This conclusion is also supported by SPICE simulations and an analysis of the heavy ion data, described in this report. The edge triggered D flip-flop has two single-event-upset modes. Mode one, called C-module upset, is caused by a heavy ion striking the C-module's sensitive area on the silicon and produces a soft single bit error at the output of the flip-flop. Mode two, called clock upset, is caused by a heavy ion strike on the clock buffer, generating a runt pulse interpreted as a false clock signal and consequently producing errors at the flip-flop outputs. C-module upset sensitivity in the RH1020 is essentially the same as that of its ACT 1 siblings (A1020, A1020A and A1020B), which were well tested, analyzed, and documented in the literature.

Katz, Richard B.↗