NASA NTRS · 20060039117
Single Event Upset Behavior of CMOS Static RAM Cells
Abstract
An improved state-space analysis of the CMOS static RAM cell is presented. Introducing theconcept of the dividing line, the critical charge for heavy-ion-induced upset of memory cells can becalculated considering symmetrical as well as asymmetrical capacitive loads. From the criticalcharge, the upset-rate per bit-day for static RAMs can be estimated.
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Lieneweg, Udo, Jeppson, Kjell O., Buehler, Martin G.. 1993-06-09. Single Event Upset Behavior of CMOS Static RAM Cells. https://ntrs.nasa.gov/citations/20060039117
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