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At least 109 records · Page 6

Preliminary Work in Obtaining Site-Directed Mutants of Hen Egg White Lysozyme

Protein crystal growth studies are recognized as a critical endeavor in the field of molecular biotechnology. The scientific applications of this field include the understanding of how enzymes function and the accumulation of accurate information of atomic structures, a key factor in the process of rational drug design. NASA has committed substantial investment and resources to the field of protein crystal growth and has conducted many microgravity protein crystal growth experiments aboard shuttle flights. Crystals grown in space tend to be larger, denser and have a more perfect habit and geometry. These improved properties gained in the microgravity environment of space result largely from the reduction of solutal convection, and the elimination of sedimentation at the growing crystal surface. Shuttle experiments have yielded many large, high quality crystals that are suitable for high resolution X-ray diffraction analysis. Examples of biologically important macromolecules which have been successfully crystallized during shuttle missions include: lysozyme, isocitrate lyase, gamma-interferon, insulin, human serum albumin and canavalin. Numerous other examples are also available. In addition to obtaining high quality crystals, investigators are also interested in learning the mechanisms by which the growth events take place. Crystallization experiments indicate that for the enzyme HEWL, measured growth rates do not follow mathematical models for 2D nucleation and dislocation-led growth of tetragonal protein crystals. As has been suggested by the laboratory of Marc L. Pusey, a possible explanation for the disagreement between observation and data is that HEWL tetraconal crystals form by aggregated units of lysozyme in supersaturated solutions. Surface measurement data was shown to fit very well with a model using an octamer unit cell as the growth unit. According to this model, the aggregation pathway and subsequent crystal growth is described by: monomer < ------ > dimer < ------- > tetramer < ------ > octamer < ------ > higher order. It is believed that multimer aggregation of lysozyme occurs by interaction at specific binding sites on the surface of the protein crystals. If the presence of discrete binding sites and the aggregation hypothesis is true, then it follows that the alteration of the binding site(s) should have significant effect on the measurements obtained during growth experiments. Site-directed mutagenesis allows the specific alteration of proteins by replacement, deletion or addition of specific amino acid residues. This report outlines the approach for this strategy and the progress made thus far toward that end.

Holmes, Leonard D.↗

Experiment K-314: Fetal and neonatal rat bone and joint development following in Utero spaceflight

Infant rat limb specimens from Soviet and U.S. ground-based studies were examined by radiography, macrophotography, histologic sectioning and staining and scanning electron microscopy. A comparison was conducted between vivarium and flight-type diets suggesting that nutritional obesity may adversely affect pregnancy. Data were obtained on maturation of ossification centers, orientation of collagen fibers in bone, tendon and ligaments, joint surface texture and spatial relationships of bones of the hind limb. Computer reconstructions of the knee and hip show promise as a means of investigating the etiology of congenital hip dislocation.

Sabelman, E. E.↗

Pre- and post-annealing of mechanical damage in silicon wafers

Basic properties of mechanical damage in silicon consisting of cracks and abrasion were studied using transmission electron microscopy. The crystallographic structure of mechanical damage was determined before and after high temperature annealing. The main findings include that stresses in silicon around crack tips are not plastically relieved at room temperature and that abrasion at room temperature introduces shear loops into the silicon. It was also found that cracks of micron size can be annealed out, specifically, if cleavage occurs on 111 planes. The healing products of such cracks are 60 deg and 90 deg dislocations. Submicron cracks transform into stacking faults during annealing. Likewise high concentrations of shear loops due abrasion were found to anneal into stacking faults. A one to one correlation between surface areas containing small cracks and stacking faults was made. Measurements of damage removal on silicon surfaces through chemical-mechanical etching techniques are presented. It is shown that silicon dioxide repolishes damaged silicon surfaces most effectively.

Schwottke, G. H.↗

Magnetic bearing and motor

A magnetic bearing assembly (10) has an intermediate rotatable section (33) having an outer cylindrical member (30) coaxially suspended by a torsion wire (72) around an axially polarized cylindrical magnet (32). Axial alignment between the pole faces (40-43) of the intermediate section (33) and end surfaces (50-53) of opposed end bells (20, 22) provides a path of least reluctance across intervening air gaps (60-63) for the magnetic flux emanating from magnet (32). Radial dislocation increases the reluctance and creates a radial restoring force. Substitution of radially polarized magnets 107 fixed to a magnetically permeable cylinder (32') and insertion of pairs of armature coil windings (109-112) between the cylinder pair (33') provides an integral magnetic bearing and torsion motor (100) able to provide arcuately limited rotational drive.

Studer, Philip A.↗

Crack Growth Behavior in the Threshold Region for High Cyclic Loading

The present studies show that fanning in the threshold regime is likely caused by other factors than a plastic wake developed during load shedding. The cause of fanning at low R-values is a result of localized roughness, mainly formation of a faceted crack surface morphology , plus crack bifurcations which alters the crack closure at low R-values. The crack growth behavior in the threshold regime involves both crack closure theory and the dislocation theory of metals. Research will continue in studying numerous other metal alloys and performing more extensive analysis, such as the variation in dislocation properties (e.g., stacking fault energy) and its effects in different materials.

Forman, R.↗

Growth and Characterization of 3C-SiC and 2H-AIN/GaN Films and Devices Produced on Step-Free 4H-SiC Mesa Substrates

While previously published experimental results have shown that the step-free (0 0 0 1) 4H-SiC mesa growth surface uniquely enables radical improvement of 3C-SiC and 2H-AlN/GaN heteroepitaxial film quality (greater than 100-fold reduction in extended defect densities), important aspects of the step-free mesa heterofilm growth processes and resulting electronic device benefits remain to be more fully elucidated. This paper reviews and updates recent ongoing studies of 3C-SiC and 2H-AlN/GaN heteroepilayers grown on top of 4H-SiC mesas. For both 3C-SiC and AlN/GaN films nucleated on 4H-SiC mesas rendered completely free of atomic-scale surface steps, TEM studies reveal that relaxation of heterofilm strain arising from in-plane film/substrate lattice constant mismatch occurs in a remarkably benign manner that avoids formation of threading dislocations in the heteroepilayer. In particular, relaxation appears to occur via nucleation and inward lateral glide of near-interfacial dislocation half-loops from the mesa sidewalls. Preliminary studies of homojunction diodes implemented in 3C-SiC and AlN/GaN heterolayers demonstrate improved electrical performance compared with much more defective heterofilms grown on neighbouring stepped 4H-SiC mesas. Recombination-enhanced dislocation motion known to degrade forward-biased 4H-SiC bipolar diodes has been completely absent from our initial studies of 3C-SiC diodes, including diodes implemented on defective 3C-SiC heterolayers grown on stepped 4H-SiC mesas.

Neudeck, P. G.↗

High purity isotopically enriched Ge-70 and Ge-74 single crystals - Isotope separation, growth, and properties

Ge-70 and Ge-74 isotopes were successfully separated from natural Ge, and were zone purified. Several highly enriched, high purity Ge-70 and Ge-74 single crystals were grown by the vertical Bridgman method. The growth system was designed for reliable growth of low dislocation density, high purity Ge single crystals of about 4 g weight. A Ge-70 and a Ge-74 crystal were selected for complete characterization. In spite of the large surface-to-volume ratio of these ingots, both Ge-70 and Ge-74 crystals contain low electrically active chemical net-impurity concentrations of about 2 x 10 exp 12/cu cm, which is 2 orders of magnitude better than that of Ge-74 crystals previously grown by two different groups. Isotopic enrichment of the Ge-70 and the Ge-74 crystals is 96.3 percent and 96.8 percent, respectively. The residual donors and acceptors present in both crystals were identified as phosphorus and copper, respectively. In addition, less than 10 exp 11/cu cm Ga, Al, and In were found in the Ge-70 crystal.

Itoh, Kohei↗

Three-Dimensional Stress Fields and Slip Systems for Single Crystal Superalloy Notched Specimens

Single crystal superalloys have become increasingly popular for turbine blade and vane applications due to their high strength, and creep and fatigue resistance at elevated temperatures. The crystallographic orientation of a single crystal material greatly affects its material properties, including elastic modulus, shear modulus, and ductility. These directional properties, along with the type of loading and temperature, dictate an anisotropic response in the yield strength, creep resistance, creep rupture ductility, fatigue resistance, etc. A significant amount of research has been conducted to determine the material properties in the <001> orientation, yet the material properties deviating from the <001> orientation have not been assessed for all cases. Based on the desired application and design criteria, a crystal orientation is selected to yield the maximum properties. Currently, single crystal manufacturing is able to control the primary crystallographic orientation within 15 of the target orientation, which is an acceptable deviation to meet both performance and cost guidelines; the secondary orientation is rarely specified. A common experiment is the standard load-controlled tensile test, in which specimens with different orientations can be loaded to observe the material response. The deformation behavior of single-crystal materials under tension and compression is known to be a function of not only material orientation, but also of varying microdeformation (i.e. dislocation) mechanisms. The underlying dislocation motion causes deformation via slip, and affects the activation of specific slip systems based on load and orientation. The slip can be analyzed by observing the visible traces left on the surface of the specimen from the slip activity within the single crystal material. The goal of this thesis was to predict the slip systems activated in three-dimensional stress fields of a notched tensile specimen, as a function of crystal orientation, using finite element analysis without addressing microstructural deformation mechanisms that govern their activation. Out of three orientations tested, the specimen with a [110] load orientation and a [001] growth direction had the lowest maximum resolved shear stress; this specimen orientation appears to be the best design candidate for a tensile application.

Magnan, Shannon M.↗

Crystal Growth in Liquid-Encapsulated Float Zone

Suitably chosen liquid encapsulant placed around melt zone in float-zone crystal-growth system performs four important functions enhancing purity and reducing strains and dislocations in final crystal. In new technique, grow dislocation-free crystals with precisely controlled composition even from materials not amenable to conventional float-zone crystal-growth method. Support provided by encapsulant make it practical to process materials of low surface tension.

Naumann, Robert J.↗

The fine structure of slip lines in disordered Cu3Au.

The fine structure of the slip bands observed on the surface of a deformed Cu3Au single crystal is examined. The separation distance determined between the resolved individual slip lines is used to examine the calculations of other authors relating the passing stress of a dislocation past a dislocation pileup on a nearby parallel glide plane.

Salama, K.↗

Measurements of coseismic deformation in southern California - 1972-1982

This paper compares records collected in the years 1972-1982 from two classes of instruments at Pinon Flat Observatory (PFO), southern California: the long-base-length (greater than 100 m) strain meters and tiltmeters described by Berger and Lovberg(1970) and Wyatt et al. (1982), respectively; and the short-base-length near-surface tiltmeters. It was found that the signals for static strain changes recorded by the long-base-length strain meters and tiltmeters are in good quantitative agreement with the deformation calculated for a dislocation in an elastic half-space. In contrast, colocated short-base-length tiltmeters produced spurious results, with signals much larger than the theoretical coseismic deformations computed using the U.S. Geological Survey/CalTech network; these signals correlated well with peak site acceleration.

Wyatt, Frank K.↗

Containerless processing of single crystals in low-G environment

Experiments on containerless crystal growth from the melt were conducted during Skylab missions SL3 and SL4 (Skylab Experiment M-560). Six samples of InSb were processed, one of them heavily doped with selenium. The concept of the experiment is discussed and related to general crystal growth methods and their merits as techniques for containerless processing in space. The morphology of the crystals obtained is explained in terms of volume changes associated with solidification and wetting conditions during solidification. All samples exhibit extremely well developed growth facets. Analysis by X-ray topographical methods and chemical etching shows that the crystals are of high structural perfection. Average dislocation density as revealed by etching is of the order of 100 per sq cm; no dislocation clusters could be observed in the space-grown samples. A sequence of striations that is observed in the first half of the selenium-doped sample is explained as being caused by periodic surface breakdown.

Walter, H. U.↗

Crack Growth Behavior in the Threshold Region for High Cycle Fatigue Loading

This presentation describes results obtained from a research project conducted at the NASA Johnson Space Center (JSC) that was jointly supported by the FAA Technical Center and JSC. The JSC effort was part of a multi-task FAA program involving several U.S. laboratories and initiated for the purpose of developing enhanced analysis tools to assess damage tolerance of rotorcraft and aircraft propeller systems. The research results to be covered in this presentation include a new understanding of the behavior of fatigue crack growth in the threshold region. This behavior is important for structural life analysis of aircraft propeller systems and certain rotorcraft structural components (e.g., the mast). These components are often designed to not allow fatigue crack propagation to exceed an experimentally determined fatigue crack growth threshold value. During the FAA review meetings for the program, disagreements occurred between the researchers regarding the observed fanning (spread between the da/dN curves of constant R) in the threshold region at low stress ratios, R. Some participants believed that the fanning was a result of the ASTM load shedding test method for threshold testing, and thus did not represent the true characteristics of the material. If the fanning portion of the threshold value is deleted or not included in a life analysis, a significant penalty in the calculated life and design of the component would occur. The crack growth threshold behavior was previously studied and reported by several research investigators in the time period: 1970-1980. Those investigators used electron microscopes to view the crack morphology of the fatigue fracture surfaces. Their results showed that just before reaching threshold, the crack morphology often changed from a striated to a faceted or cleavage-like morphology. This change was reported to have been caused by particular dislocation properties of the material. Based on the results of these early investigations, a program was initiated at JSC to repeat these examinations on a number of aircraft structural alloys that were currently being tested for obtaining fatigue crack growth properties. These new scanning electron microscope (SEM) examinations of the fatigue fracture faces confirmed the change in crack morphology in the threshold crack tip region. In addition, SEM examinations were further performed in the threshold crack-tip region before breaking the specimens open (not done in the earlier published studies). In these examinations, extensive crack forking and even 90-degree crack bifurcations were found to have occurred in the final threshold crack-tip region. The forking and bifurcations caused numerous closure points to occur that prevented full crack closure in the threshold region, and thus were the cause of the fanning at low-R values. Therefore, we have shown that the fanning behavior was caused by intrinsic dislocation properties of the different alloy materials and were not the result of a plastic wake that remains from the load-shedding test phase. Also, to accommodate the use of da/dN data which includes fanning at low R-values, an updated fanning factor term has been developed and will be implemented into the NASGRO fatigue crack growth software. The term can be set to zero if it is desired that the fanning behavior is not be modeled for particular cases, such as when fanning is not a result of the intrinsic properties of a material.

Forman, Royce G.↗

Microstructural Development of Directionally Solidified Hg(1-x)Zn(x)Se Alloys

Hg(1-x)Zn(x)Se alloys have been studied as an alternative to Hg(1-x)Cd(x)Te for the detection of electromagnetic radiation, because the shorter ZnSe and HgSe bonds have been predicted to improve lattice stability. Several ingots with x = 0.1 were directionally solidified using a modified Bridgman-Stockbarger method; one was grown in an applied magnetic field, which greatly reduced radial compositional variations. A method was developed to reduce wetting. This, combined with the convex liquid-solid interface shape, produced boules that were single crystalline after growing about 3.5 cm. Observed surface features indicated ampoule wetting was eliminated using a graphite getter. Microstructural characteristics were greatly improved over HgCdTe alloys. In six boules, a total of only one twin was observed. A method for polishing and producing dislocation etch pits was developed for these alloys, revealing dislocation etch pit densities one to two orders of magnitude less than HgTe-based alloys. A kink in the thermal profile during processing of one boule generated more dislocations than did lattice mismatch due to compositional variations. This alloy has improved microstructural properties and resistance to dislocation formation compared with similar II-VI alloys.

Cobb, S. D.↗

Study of Dislocation-Ordered In(x)Ga(1-x)As/GaAs Quantum Dots

A report describes an experimental study of dislocation-induced spatial ordering of quantum dots (QDs) comprising nanometer-sized In(x)Ga(1-x)As islands surrounded by GaAs. Metastable heteroepitaxial structures were grown by molecular-beam epitaxy of In(x)Ga(1-x)As onto n+ GaAs and semi-insulating GaAs substrates. Then the structures were relaxed during a post-growth annealing/self-organizing process leading to the formation of surface undulations that acted as preferential sites for the nucleation of QDs. Structural effects of annealing times and temperatures on the strain-relaxed In(x)Ga(1-x)As/GaAs and the subsequent spatial ordering of the QDs were analyzed by atomic-force microscopy and transmission electron microscopy. Continuous-wave spectral and time-resolved photoluminescence (PL) measurements were performed to study the effects, upon optical properties, of increased QD positional ordering, increased QD uniformity, and proximity of QDs to arrays of dislocations. PL spectral peaks of ordered QD structures formed on strain-relaxed In(x)Ga(1-x)As/GaAs layers were found to be narrower than those of structures not so formed and ordered. Rise and decay times of time-resolved PL were found to be lower at lower temperatures -- apparently as a consequence of decreased carrier-transport times within the barriers surrounding the QDs.

Leon, Rose↗

Application of laser annealing to solar cell junction formation

The possibility of using high-energy Q-switched Nd:glass lasers to form pn junctions in solar cells by annealing ion-implanted substrates is investigated. The properties of laser annealed cells are analyzed by electrical, transmission electron microscopy, Rutherford backscattering and secondary ion mass spectrometry techniques. Tests indicate the laser annealed substrates to be damage-free and electrically active. Similar reference analysis of ion-implanted furnace-annealed substrates reveals the presence of residual defects in the form of dislocation lines and loops with substantial impurity redistribution evident for some anneal temperature/time regimes. Fabricated laser annealed cells exhibit excellent conversion efficiency. It is noted that additional improvements are anticipated once the anneal parameters for a back surface field are optimized.

Katzeff, J. S.↗

Variation of seismic slip in the Gulf of California and the possible effect on geodetic measurements of Pacific-North American plate motion

A simple dislocation model is used to evaluate the variation of seismic slip in the Gulf of California and the possible effect on geodetic measurements of Pacific-North American plate motion by means of an estimation of the surface displacements due to typical transform events in the gulf. The results of this numerical calculation suggest that if a large transform event (about 1.5 x 10 exp 26 dyne cm) were to occur within 100 to 200 km of a geodetic baseline, the relative distance measurements could be affected by up to 15 mm. This is marginally at the error level of a few millimeters plus 2 parts in 10 exp 8 of baseline length for GOMEX measurements, which thus are sensitive only to the far-field displacement along the plate boundary.

Tajima, Fumiko↗

Collisional Processing of Comet and Asteroid Surfaces: Velocity Effects on Absorption Spectra

A new paradigm has emerged where 3.9 Gyr ago, a violent reshuffling reshaped the placement of small bodies in the solar system (the Nice model). Surface properties of these objects may have been affected by collisions caused by this event, and by collisions with other small bodies since their emplacement. These impacts affect the spectrographic observations of these bodies today. Shock effects (e.g., planar dislocations) manifest in minerals allowing astronomers to better understand geophysical impact processing that has occurred on small bodies. At the Experimental Impact Laboratory at NASA Johnson Space Center, we have impacted forsterite and enstatite across a range of velocities. We find that the amount of spectral variation, absorption wavelength, and full width half maximum of the absorbance peaks vary non-linearly with the velocity of the impact. We also find that the spectral variation increases with decreasing crystal size (single solid rock versus granular). Future analyses include quantification of the spectral changes with different impactor densities, temperature, and additional impact velocities. Results on diopside, fayalite, and magnesite can be found in Lederer et al., this meeting.

Lederer, S. M.↗