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Results for “Thermoelectric Properties”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Synthesis and thermoeletric properties of Co(sub (1-x)ni)(sub X)P(sub 3) and CoAs((sub 3-x))P(sub x) skutterudites

Two types of promising phosphide skutterudite materials, Co(1-x)NixP3 (x= 0.025 to 0.70) and CoAs(3-x)Px (x=0.5 to 0.10), have been synthesized and their transport properties measured. These compounds were prepared using a direct synthesis technique. The samples were hot pressed and analyzed by electron microprobe microscopy. Hall Effect measurements were conducted to determine the electrical conductivity, mobility and carrier concentration. In addition, Seebeck voltage and thermal conductivity measurements were performed. The thermoelectric properties are presented anddiscussed as a function of temperature up to 1273 K. The thermal stability of the primary CoP3 was examined in a static vacuum under isothermal and in-gradient conditions. The effect of the presence of 1 atm of a cover gas on the material loss rate was analyzed.

thermoelectric↗
NASA NTRS2009

Very High Output Thermoelectric Devices Based on ITO Nanocomposites

A material having useful thermoelectric properties was synthesized by combining indium-tin-oxide (ITO) with a NiCoCrAlY alloy/alumina cermet. This material had a very large Seebeck coefficient with electromotive-force-versustemperature behavior that is considered to be excellent with respect to utility in thermocouples and other thermoelectric devices. When deposited in thin-film form, ceramic thermocouples offer advantages over precious-metal (based, variously, on platinum or rhodium) thermocouples that are typically used in gas turbines. Ceramic thermocouples exhibit high melting temperatures, chemical stability at high temperatures, and little or no electromigration. Oxide ceramics also resist oxidation better than metal thermocouples, cost substantially less than precious-metal thermocouples, and, unlike precious-metal thermocouples, do not exert catalytic effects.

Fralick, Gustave↗
NASA NTRS2005

High performance p-type thermoelectric materials and methods of preparation

The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4-xAxSb3-yBy wherein 0?x?4, A is a transition metal, B is a pnicogen, and 0?y?3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

Caillat, Thierry↗
NASA NTRS1972

Technical, analytical and computer support

The development of a rigorous mathematical model for the design and performance analysis of cylindrical silicon-germanium thermoelectric generators is reported that consists of two parts, a steady-state (static) and a transient (dynamic) part. The material study task involves the definition and implementation of a material study that aims to experimentally characterize the long term behavior of the thermoelectric properties of silicon-germanium alloys as a function of temperature. Analytical and experimental efforts are aimed at the determination of the sublimation characteristics of silicon germanium alloys and the study of sublimation effects on RTG performance. Studies are also performed on a variety of specific topics on thermoelectric energy conversion.

Source record↗
NASA NTRS2002

High performance P-type thermoelectric materials and methods of preparation

The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn.sub.4-x A.sub.x Sb.sub.3-y B.sub.y wherein 0.ltoreq.x.ltoreq.4, A is a transition metal, B is a pnicogen, and 0.ltoreq.y.ltoreq.3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn.sub.4 Sb.sub.3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

Caillat, Thierry↗
NASA NTRS2018

Developing a Novel Platform for Characterizing Thermoelectric Materials for Uncooled Detectors for Land Imaging Applications

Thermal land imaging (imaging at ~8-14 micron optical wavelength) is an essential tool for understanding and managing terrestrial freshwater resources. Current thermal imaging instruments employ low temperature detectors, which require cryocoolers. Consequently, cost-saving reductions in size, weight, and power can be achieved by employing uncooled detectors. One uncooled detector concept, which NASA is pursuing, is a thermopile detector with sub-micron thick doped-Si thermoelectric materials. In order to characterize the thermoelectric properties of the doped silicon, we designed and optimized a novel apparatus. This simple apparatus measures the Seebeck coefficient with thermally isolated stages and LABVIEW automation. We optimized thermal stability using PID tuning and optimized the thermal contact between the thin film samples and stages using electrically conductive springs. Utilizing our apparatus, we measured the Seebeck coefficient of 0.45 micron thick phosphorus-doped single crystal Si samples bonded to alumina substrates. Using these Seebeck coefficient measurements and four-wire electrical resistivity measurements, we determined the relationship between the thermoelectric figure of merit and dopant concentration. These characterization results for doped-Si will guide our thermopile detector design to provide an optimal and competitive detector alternative for future thermal imaging instruments.

Reid, Riley A.↗
NASA NTRS1994

CoSb(sub 3)-IrSb(sub 3)Solid Solutions: Preparations and Characterization

The binary antimonide compounds of the skutterudite family have a good potential for thermoelectric applications as recent results at JPL have shown. However, the room temperature thermal conductivity of these materials is about 10 Wm(sup -1)K(sup -1) with an 80 % contribution from the lattice. To achieve maximum ZT values, the lattice thermal conductivity needs to be lowered. Because the lattice thermal conductivity of solid solutions can substantially decrease due to the addition of point defect phonon scattering (all state-of-the-art thermoelectric materials are solid solutions), a study of the formation of solid solutions between the antimonide skutterudite compounds is of interest. The preparation and characterization of both p-type and n-type CoSb(sub 3)-IrSb(sub 3) solid solutions by several techniques is reviewed in this paper. Experimental results showed that solid solutions were successfully formed in a wide range of compositions. The changes in the thermoelectric properties indicated the influence of a strong point defect scattering, resulting in large decreases in Hall mobility and thermal conductivity. The potential for high ZT values in CoSb(sub 3)-IrSb(sub 3) solid solutions is discussed.

mobility↗
NASA NTRS1967

Materials engineering

Thermal diffusivity measurement, thermoelectric properties of graphite alloys and compounds, superconductivity in tungsten films, and gas pump based on thermal transpiration

Altman, M.↗
NASA NTRS1973

Apparatus and method for measuring the Seebeck coefficient and resistivity of materials

An apparatus for measuring the thermoelectric properties of materials under high pressure is described that includes a pair of force transmitting assemblies constructed of thermally and electrically conductive material positioned between the ram and anvil of a press. Each force transmitting assembly has a small diameter pressing portion for contacting a face of the sample so that the sample can be squeezed between them. Each assembly also includes a heat exchanger to maintain the sample face at a controlled temperature, and an electrical conductor to carry current generated by the sample. A sleeve of thermally and electrically insulative material closely surrounds the pressing portions of the two assemblies.

Hadek, V.↗
NASA NTRS1972

A model to predict the degradation of a SiGe thermopile.

Discussion of the various phenomena which affect the available output power of a typical radioisotope thermoelectric generator (RTG), including estimates of the magnitude of these effects. Power degradation, as well as the corresponding changes in operating temperature, are calculated by means of a computer code which systematically accounts for the time- and temperature-dependent variables. A model for predicting available output power of an RTG is developed which includes changes in performance due to fuel decay, alteration of bulk thermoelectric properties, changes in electrode contacts, geometry changes due to material sublimation, and degradation of the thermal insulation.

Stapfer, G.↗
NASA NTRS1972

Reference data for thermocouple materials below the ice point.

Standard thermoelectric data have been determined for four thermocouple combinations used below the ice point: commercial types E, K, and T and the special combination of KP vs Au-0.07 at.% Fe. Power series coefficients necessary to generate E = f(T) data for these combinations are given. In addition, extensive tests were carried out to ascertain the variability between materials from different manufacturers. Typical wires processed for low-temperature usage often have slightly thermoelectric properties (up to 1%) from those, nominally identical, wires made for high-temperature applications. Generally, type E is the most satisfactory standardized commercial combination. The Au-0.07 at.% Fe material has been examined in particular detail, because it is not yet an ISA standard material. It has excellent sensitivity in the liquid helium/liquid hydrogen temperature range and a nearly linear thermovoltage at higher temperatures.

Sparks, L. L.↗
NASA NTRS1983

Present state of boron-carbon thermoelectric materials

Boron-carbon p-type thermoelectric materials show promise for use in advanced thermal-to-electric space power conversion systems. Here, recent data on the thermoelectric properties of boron-carbon materials, such as B9C, B13C2, B15C2, and B4C, are reviewed. In particular, attention is given to the effect of the compositional homogeneity and residual impurity content on the Seeback coefficient, electrical resistivity, and thermal conductivity of these materials. The effect of carbon content for a given level of impurity and degree of homogeneity is also discussed.

Elsner, N. B.↗
NASA NTRS1984

Lanthanum sulfides as high temperature thermoelectric materials

Thermoelectric property measurements have been made for the nonstoichiometric lanthanum sulfides, LaS(R) with R in the range 1.33-1.50. The Seebeck coefficients and electrical resistivities increase with temperature from 200 to 1100 C. Power factors (defined as Seebeck coefficient squared divided by electrical resistivity) generally increase both as the temperature is increased and as the compound composition is varied from LaS(1.48) to LaS(1.35). The power factor values combined with estimates of thermal conductivities for LaS(1.38) and LaS(1.4) yield figures of merit greater than 0.0005 at 1000 C.

Danielson, L. R.↗
NASA NTRS1989

Research In Thermoelectric Materials

Report reviews current research in thermoelectric materials with view towards development of materials of greater energy-conversion efficiency. Emphasis on effort to understand and manipulate microstructure to increase thermoelectric figure of merit, Z. Thermoelectric properties of three broad categories of materials discussed. First category includes alloys of group IV elements like silicon and germanium. Second category is rare-earth chalcogenides. Third category includes narrow-band semiconductors, especially boron carbides.

Wood, Charles↗
NASA NTRS1990

High figure of merit thermoelectrics - Theoretical considerations

The thermoelectric figure of merit of a semiconductor, ZT, can be calculated from a small number of microscopic material parameters, the material composition, the doping level, and the temperature. The functional dependence of ZT on these parameters has been studied for a range of material parameters using a recently developed model which accurately and self-consistently describes the thermoelectric properties of n-type silicon-germanium alloys. ZT values several times larger than current state-of-the-art values of ZT of about 1 are shown to be entirely consistent with existing theory, even using material parameters already observed. A search for materials with much higher figure of merit values therefore remains of interest, in spite of several decades of relatively slow progress in this area.

Vining, Cronin B.↗