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At least 109 records · Page 6

Progress in Voltage and Current Mode On-Chip Analog-to-Digital converters for CMOS Image Sensors

Two 8 bit successive approximation analog-to-digital converter (ADC) designs and a 12 bit current mode incremental sigma delta ADC have been designed, fabricated, and tested. The successive approximation test chip designs are compatible with active pixel sensor (APS) column parallel architectures with a 20.4 ??itch in a 1.2 ??-well CMOS process and a 40 ??itch in a 2 ??-well CMOS process. The successive approximation designs consume as little as 49 ??t a 500 KHz conversion rate meeting the low power requirements inherent in column parallel architectures. The current mode incremental sigma-delta ADC test chips designed to be multiplied among 8 columns in a semi-column parallel current mode APS architecture. The higher accuracy ADC consumes 800 ??t a 5 KHz.

analog-to-digital↗

A Low-Power High-Speed Smart Sensor Design for Space Exploration Missions

A low-power high-speed smart sensor system based on a large format active pixel sensor (APS) integrated with a programmable neural processor for space exploration missions is presented. The concept of building an advanced smart sensing system is demonstrated by a system-level microchip design that is composed with an APS sensor, a programmable neural processor, and an embedded microprocessor in a SOI CMOS technology. This ultra-fast smart sensor system-on-a-chip design mimics what is inherent in biological vision systems. Moreover, it is programmable and capable of performing ultra-fast machine vision processing in all levels such as image acquisition, image fusion, image analysis, scene interpretation, and control functions. The system provides about one tera-operation-per-second computing power which is a two order-of-magnitude increase over that of state-of-the-art microcomputers. Its high performance is due to massively parallel computing structures, high data throughput rates, fast learning capabilities, and advanced VLSI system-on-a-chip implementation.

Fang, Wai-Chi↗

Design optimization of MAPS-based detectors using a data-driven fast simulation approach

A parametric simulation tool for pixel sensors is presented. A realistic pixel response is simulated purely based on measurement input, without requiring detailed knowledge of the underlying manufacturing process. As such, it provides an efficient alternative to the use of Technology Computer-Aided Design simulations, which typically depend on proprietary process information. Due to its parametric approach, the package is fast and thus particularly useful for larger detector systems and high hit rate environments. This work presents measurements, simulation and its validation for the MALTA2 sensor. It is a small collection electrode monolithic active pixel sensor produced in the Tower 180 nm complementary metal-oxide-semiconductor imaging process. Modifications to the sensor’s periphery, mainly in the hit merger, are studied in order to optimize the performance for tracking and calorimetry. This optimization is of special interest as part of the MALTA3 sensor redesign in the 65 nm Tower Partners Semiconductor Co. process.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

The 4D Camera: An 87 kHz Direct Electron Detector for Scanning/Transmission Electron Microscopy

We describe the development, operation, and application of the 4D Camera—a 576 by 576 pixel active pixel sensor for scanning/transmission electron microscopy which operates at 87,000 Hz. The detector generates data at ~480 Gbit/s which is captured by dedicated receiver computers with a parallelized software infrastructure that has been implemented to process the resulting 10–700 Gigabyte-sized raw datasets. The back illuminated detector provides the ability to detect single electron events at accelerating voltages from 30 to 300 kV. Through electron counting, the resulting sparse data sets are reduced in size by 10--300× compared to the raw data, and open-source sparsity-based processing algorithms offer rapid data analysis. The high frame rate allows for large and complex scanning diffraction experiments to be accomplished with typical scanning transmission electron microscopy scanning parameters.

47 OTHER INSTRUMENTATION↗

CMOS foveal image sensor chip

A foveal image sensor integrated circuit comprising a plurality of CMOS active pixel sensors arranged both within and about a central fovea region of the chip. The pixels in the central fovea region have a smaller size than the pixels arranged in peripheral rings about the central region. A new photocharge normalization scheme and associated circuitry normalizes the output signals from the different size pixels in the array. The pixels are assembled into a multi-resolution rectilinear foveal image sensor chip using a novel access scheme to reduce the number of analog RAM cells needed. Localized spatial resolution declines monotonically with offset from the imager's optical axis, analogous to biological foveal vision.

Bandera, Cesar↗

Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would be fabricated separately.

Zheng, Xinyu↗

Pointing Reference Scheme for Free-Space Optical Communications Systems

A scheme is proposed for referencing the propagation direction of the transmit laser signal in pointing a free-space optical communications terminal. This recently developed scheme enables the use of low-cost, commercial silicon-based sensors for tracking the direction of the transmit laser, regardless of the transmit wavelength. Compared with previous methods, the scheme offers some advantages of less mechanical and optical complexity and avoids expensive and exotic sensor technologies. In free-space optical communications, the transmit beam must be accurately pointed toward the receiver in order to maintain the communication link. The current approaches to achieve this function call for part of the transmit beam to be split off and projected onto an optical sensor used to infer the pointed direction. This requires that the optical sensor be sensitive to the wavelength of the transmit laser. If a different transmit wavelength is desired, for example to obtain a source capable of higher data rates, this can become quite impractical because of the unavailability or inefficiency of sensors at these wavelengths. The innovation proposed here decouples this requirement by allowing any transmit wavelength to be used with any sensor. We have applied this idea to a particular system that transmits at the standard telecommunication wavelength of 1,550 nm and uses a silicon-based sensor, sensitive from 0.5 to 1.0 micrometers, to determine the pointing direction. The scheme shown in the figure involves integrating a low-power 980-nm reference or boresight laser beam coupled to the 1,550-nm transmit beam via a wavelength-division-multiplexed fiber coupler. Both of these signals propagate through the optical fiber where they achieve an extremely high level of co-alignment before they are launched into the telescope. The telescope uses a dichroic beam splitter to reflect the 980- nm beam onto the silicon image sensor (a quad detector, charge-coupled device, or active-pixel-sensor array) while the 1,550- nm signal beam is transmitted through the optical assembly toward the remotely located receiver. Since the 980-nm reference signal originates from the same single-mode fiber-coupled source as the transmit signal, its position on the sensor is used to accurately determine the propagation direction of the transmit signal. The optics are considerably simpler in the proposed scheme due to the use of a single aperture for transmitting and receiving. Moreover, the issue of mechanical misalignment does not arise because the reference signal and transmitted laser beams are inherently co-aligned. The beam quality of the 980-nm reference signal used for tracking is required to be circularly symmetric and stable at the tracking-plane sensor array in order to minimize error in the centroiding algorithm of the pointing system. However, since the transmit signal is delivered through a fiber that supports a single mode at 1,550 nm, propagation of higher order 980-nm modes is possible. Preliminary analysis shows that the overall mode profile is dominated by the fundamental mode, giving a near symmetric profile. The instability of the mode was also measured and found to be negligible in comparison to the other error contributions in the centroid position on the sensor array.

Wright, Malcolm↗

Beam test performance of AstroPix sensor with 120 GeV protons

AstroPix is a High-Voltage CMOS Monolithic Active Pixel Sensor (HV-CMOS MAPS) developed for precision gamma-ray imaging and spectroscopy in the medium-energy regime, as well as for precise shower imaging and tracking in the Barrel Imaging Calorimeter (BIC) of the Electron Proton/Ion Collider (ePIC) detector at the future Electron–Ion Collider (EIC). We present beam test results of the AstroPix_v3 sensor using a 120 GeV proton beam at the Fermilab Test Beam Facility (FTBF), performed as part of the broader experimental campaign for the BIC prototype calorimeter. The sensor’s 500 µm pixel pitch enabled precise measurement of the beam profile, providing important information for the calorimeter performance studies. Using the measured 120 GeV proton data, we measure the energy deposit of minimum ionizing particles (MIP) and use them to extract the corresponding effective depletion depth at a single bias voltage of −150 V .

AstroPix↗

Design of a Low-Light-Level Image Sensor with On-Chip Sigma-Delta Analog-to- Digital Conversion

The design and projected performance of a low-light-level active-pixel-sensor (APS) chip with semi-parallel analog-to-digital (A/D) conversion is presented. The individual elements have been fabricated and tested using MOSIS* 2 micrometer CMOS technology, although the integrated system has not yet been fabricated. The imager consists of a 128 x 128 array of active pixels at a 50 micrometer pitch. Each column of pixels shares a 10-bit A/D converter based on first-order oversampled sigma-delta (Sigma-Delta) modulation. The 10-bit outputs of each converter are multiplexed and read out through a single set of outputs. A semi-parallel architecture is chosen to achieve 30 frames/second operation even at low light levels. The sensor is designed for less than 12 e^- rms noise performance.

Mendis, Sunetra K.↗

Carrier Plus: A sensor payload for Living With a Star Space Environment Testbed (LWS/SET)

The Defense Threat Reduction Agency (DTR4) and National Aeronautics and Space Administration (NASA) Goddard Space Flight Center are collaborating to develop the Carrier Plus sensor experiment platform as a capability of the Space Environments Testbed (SET). The Space Environment Testbed (SET) provides flight opportunities for technology experiments as part of NASA's Living With a Star (LWS) program. The Carrier Plus will provide new capability to characterize sensor technologies such as state-of-the-art visible focal plane arrays (FPAs) in a natural space radiation environment. The technical objectives include on-orbit validation of recently developed FPA technologies and performance prediction methodologies, as well as characterization of the FPA radiation response to total ionizing dose damage, displacement damage and transients. It is expected that the sensor experiment will carry 4-6 FPAs and associated radiation correlative environment monitors (CEMs) for a 2006-2007 launch. Sensor technology candidates may include n- and p-charge coupled devices (CCDs), active pixel sensors (APS), and hybrid CMOS arrays. The presentation will describe the Carrier Plus goals and objectives, as well as provide details about the architecture and design. More information on the LWS program can be found at http://lws.gsfc.nasa.gov/. Business announcements for LWS/SET and program briefings are posted at http://lws-set.gsfc.nasa.gov

Marshall, Cheryl J.↗

[High-Performance Active Pixel X-Ray Sensors for X-Ray Astronomy]

The subject grants support development of High-Performance Active Pixel Sensors for X-ray Astronomy at the Massachusetts Institute of Technology (MIT) Center for Space Research and at MIT's Lincoln Laboratory. This memo reports our progress in the second year of the project, from April, 2004 through the present.

Bautz, Mark↗

AstroPix: A pixelated HVCMOS sensor for space-based gamma-ray measurement

A next-generation medium-energy gamma-ray telescope targeting the MeV range would address open questions in astrophysics regarding how extreme conditions accelerate cosmic-ray particles, produce relativistic jet outflows, and more. One concept, AMEGO-X, relies upon the mission-enabling CMOS Monolithic Active Pixel Sensor silicon chip AstroPix. AstroPix is designed for space-based use, featuring low noise, low power consumption, and high scalability. Desired performance of the device include an energy resolution of 5 keV (or 10% FWHM) at 122 keV and a dynamic range per-pixel of 25–700 keV, enabled by the addition of a high-voltage bias to each pixel which supports a depletion depth of 500 μ m. This work reports on the status of the AstroPix development process with emphasis on the current version under test, version three (v3), and highlights of version two (v2). Version 3 achieves energy resolution of 10.4 ± 3.2% at 59.5 keV and 94 ± 6 μ m depletion in a low-resistivity test silicon substrate.

Astrophysics instrumentation↗

Smart-Pixel Array Processors Based on Optimal Cellular Neural Networks for Space Sensor Applications

A smart-pixel cellular neural network (CNN) with hardware annealing capability, digitally programmable synaptic weights, and multisensor parallel interface has been under development for advanced space sensor applications. The smart-pixel CNN architecture is a programmable multi-dimensional array of optoelectronic neurons which are locally connected with their local neurons and associated active-pixel sensors. Integration of the neuroprocessor in each processor node of a scalable multiprocessor system offers orders-of-magnitude computing performance enhancements for on-board real-time intelligent multisensor processing and control tasks of advanced small satellites. The smart-pixel CNN operation theory, architecture, design and implementation, and system applications are investigated in detail. The VLSI (Very Large Scale Integration) implementation feasibility was illustrated by a prototype smart-pixel 5x5 neuroprocessor array chip of active dimensions 1380 micron x 746 micron in a 2-micron CMOS technology.

Fang, Wai-Chi↗

Chromatic Modulator for High Resolution CCD or APS Devices

A system for providing high-resolution color separation in electronic imaging. Comb drives controllably oscillate a red-green-blue (RGB) color strip filter system (or otherwise) over an electronic imaging system such as a charge-coupled device (CCD) or active pixel sensor (APS). The color filter is modulated over the imaging array at a rate three or more times the frame rate of the imaging array. In so doing, the underlying active imaging elements are then able to detect separate color-separated images, which are then combined to provide a color-accurate frame which is then recorded as the representation of the recorded image. High pixel resolution is maintained. Registration is obtained between the color strip filter and the underlying imaging array through the use of electrostatic comb drives in conjunction with a spring suspension system.

Frank T Hartley↗

Development of selenium imaging detectors toward a definitive search for neutrinoless ββ decay

Imaging sensors made from an ionization target layer of amorphous selenium (aSe) coupled to a silicon complementary metal-oxide-semiconductor (CMOS) active pixel array for charge readout are a promising technology for neutrino physics. The high spatial resolution in a solid-state target provides unparalleled rejection of backgrounds from natural radioactivity in the search for the neutrinoless ββ decay of 82 Se. With this grant, we experimentally determined two crucial factors necessary for the realization of this novel technology: i) the intrinsic energy response of aSe to ionizing electrons, and ii) the feasibility to couple a target layer of aSe to a CMOS active pixel sensor to image electron tracks.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Image Sensors Enhance Camera Technologies

In the 1990s, a Jet Propulsion Laboratory team led by Eric Fossum researched ways of improving complementary metal-oxide semiconductor (CMOS) image sensors in order to miniaturize cameras on spacecraft while maintaining scientific image quality. Fossum s team founded a company to commercialize the resulting CMOS active pixel sensor. Now called the Aptina Imaging Corporation, based in San Jose, California, the company has shipped over 1 billion sensors for use in applications such as digital cameras, camera phones, Web cameras, and automotive cameras. Today, one of every three cell phone cameras on the planet feature Aptina s sensor technology.

Source record↗

Development of CMOS Sensors for HEP with a US-based foundry

We will present a program to establish the first development and manufacturing of HEP-specific sensors monolithically integrated into a standard CMOS process using a US-based foundry. In collaboration with several US universities the project aims to develop Monolithic Active Pixel Sensors (MAPS) designs implemented in the 90 nm technology node, including simple test structures and multi-pixel arrays, and monolithic CMOS sensors with readout integrated circuits, perform detailed characterization of the detector prototypes and quantify their performance for HEP applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗