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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Space Qualification Test of a-Silicon Solar Cell Modules

The basic requirements of solar cell modules for space applications are generally described in MIL-S-83576 for the specific needs of the USAF. However, the specifications of solar cells intended for use on space terrestrial applications are not well defined. Therefore, this qualifications test effort was concentrated on critical areas specific to the microseismometer probe which is intended to be included in the Mars microprobe programs. Parameters that were evaluated included performance dependence on: illuminating angles, terrestrial temperatures, lifetime, as well as impact landing conditions. Our qualification efforts were limited to these most critical areas of concern. Most of the tested solar cell modules have met the requirements of the program except the impact tests. Surprisingly, one of the two single PIN 2 x 1 amorphous solar cell modules continued to function even after the 80000G impact tests. The output power parameters, Pout, FF, Isc and Voc, of the single PIN amorphous solar cell module were found to be 3.14 mW, 0.40, 9.98 mA and 0.78 V, respectively. These parameters are good enough to consider the solar module as a possible power source for the microprobe seismometer. Some recommendations were made to improve the usefulness of the amorphous silicon solar cell modules in space terrestrial applications, based on the results obtained from the intensive short term lab test effort.

Kim, Q.↗
NASA NTRS1977

Ionization induced damage in crystalline silicon

Close examination of the interaction of the energetic knock-on atoms with the local lattice environment reveals a damage mechanism which does satisfy the experimental data on proton irradiation of silicon. A proton-atom interaction with high energy transfer is considered where the proton path is delineated by a trail of ionization, and the silicon ion path is characterized by much heavier ionization terminating in a dense displacement cluster. At collision, many of the silicon electrons are stripped off, and the resulting energetic ion subsequently loses energy rapidly by Coulomb interaction with bound electrons. The rate of energy loss depends on the charge state and velocity of the knock-on ion. For ion energies in excess of 1 MeV, the intensity of ionization is sufficient to permit lattice atoms, stripped of their binding electrons, to reorient randomly before having an opportunity to recombine with electrons and re-establish the lattice. The path of a knock-on ion thus becomes a thin cylinder of amorphous material within the crystal. Amorphous silicon has a Fermi level closer to mid-band than does single crystal silicon, and a strong field therefore, results around this damaged region. The field produces a large depletion region, representing a very large capture cross section for minority carriers.

Meulenberg, A., Jr.↗
NASA NTRS1990

Ellipsometric study of cubic SiC

Variable angle spectroscopic ellipsometry (VASE) was applied to cubic SiC. This technique gives absolute values of the refractive index (n) and the extinction coefficient (k) of a substrate and/or a thin film of unknown material. The samples were grown by chemical vapor deposition (CVD) on p-type silicon. The substrate was aligned either on the (001) axis or 1 degree of (001). Several growth temperatures and growth durations were used. The samples were divided into two groups: (1) thick films of order 10 microns grown near optimal conditions of temperature, flow, and gas ratio; and (2) thin films of order 100 A grown at various temperatures. The ellipsometric results for samples in group 1 were analyzed using a two-phase model (substrate and ambient). Results show that for wavelengths in the visible, the refractive index of these CVD samples is equal to that reported for single crystal cubic SiC, within the experimental error, which is on the order of 1 percent. However, the extinction coefficient has a relatively large value, even above the band gap. The absorption is sample dependent and has a broad peak in the visible. The results for samples in group 2 were analyzed using a three-phase model (substrate, film, and ambient). The dielectric functions of the film, deducted from the measured n and k, were further analyzed using the effective medium approximation. The results show that the films contain 30 to 40 vol. percent amorphous silicon, i.e., silicon with only short-range order.

Alterovitz, Samuel A.↗
NASA NTRS1979

Laser Techniques in Photovoltaic Research

High-power laser pulses were used to replace the conventional high temperature furnace processing for the p-n junction formation step in high speed, low cost solar cell fabrication. Three different approaches to junction formation were tested: (1) laser annealing of ion-implanted Si in which laser radiation is used to remove the radiation damage and to recover the electrical activity in the implanted layer; (2) a process in which a thin film of dopant is first deposited on the substrate and then incorporated into the near-surface region by laser-induced diffusion; and (3) a process in which a heavily doped amorphous silicon layer is deposited on the Si substrate and epitaxially regrown from the melted substrate layer by laser radiation. All three methods were found to provide suitable candidates for high efficiency Si solar cells.

Young, R. T.↗
NASA NTRS1980

The generation of electron hole pairs in very thin solar cells possessing an optical back-surface reflector

It is pointed out that very thin solar cells (1 micron thick or less) as, for example, amorphous silicon or cadmium sulfide cells, possessing a back surface reflector should be regarded as Fabry-Perot cavities as far as the generation of electron-hole pairs by light is concerned. The generation rate of electron-hole pairs as a function of distance from the front surface exhibits characteristic interference patterns which are not negligible and must be accounted for in an analysis of the performance of such a cell.

Von Roos, O.↗
NASA NTRS1986

Ellipsometric Monitoring of Film Deposition

Impurities detected nondestructively during processing. In proposed system, surface of growing amorphous-silicon film monitored by ellipsometer at wavelength or combination of wavelengths at which impurity or impurities of interest absorb light strongly.

Bickler, D. B.↗
NASA NTRS1986

Photocurrent Imaging Detects Solar-Module Defects

Raster-scanned laser beam excites photocurrents in thin-film amorphous silicon devices. Solar-cell laser scanner uses two galvanometer-driven mirrors to scan laser-beam spot over surface of module or cell under test. Position signals from scan controllers used to index storage of photocurrent signal data in scan-converter image memory. Stored image displayed on television monitor.

Kim, Q.↗
NASA NTRS1985

Modelling of Laser-Enhanced Chemical Vapor Deposition

Research is directed at development of a detailed model of mass and heat transfer and chemical reaction in the pyrolysis of silane for the growth of thin amorphous silicon substrates incorporating laser heating of the gas phase above the film. The model will be the basis for evaluation of the relative importances of the decomposition of SiH4 in the vapor phase, mass transfer of the intermediate species, e.g., SiH2, and the evolution of hydrogen gas. Plans are also underway for developing a model for homogeneous nucleation of Si in the vapor phase to model the rate limitations observed at high gas-phase temperatures and high partial pressures of silane. Work was concentrated on an almost one-dimensional model for the coupling of the CO2 laser beam for heat transfer of the vapor phase with simple kinetic models for SiH4 decomposition and subsequent absorption of Si vapor on the substrate. Mass transfer in the vapor phase is assumed to be solely by diffusion. The role of convection in the vapor phase caused by the large changes in density in and around the center of the laser beam will be analyzed to evaluate the potential of microgravity experiments for increasing the uniformity of the film and the deposition rate.

Brown, R. A.↗
NASA NTRS1985

Reliability and Engineering of Thin-Film Photovoltaic Modules. Research forum proceedings

A Research Forum on Reliability and Engineering of Thin Film Photovoltaic Modules, under sponsorship of the Jet Propulsion Laboratory's Flat Plate Solar Array (FSA) Project and the U.S. Department of Energy, was held in Washington, D.C., on March 20, 1985. Reliability attribute investigations of amorphous silicon cells, submodules, and modules were the subjects addressed by most of the Forum presentations. Included among the reliability research investigations reported were: Arrhenius-modeled accelerated stress tests on a Si cells, electrochemical corrosion, light induced effects and their potential effects on stability and reliability measurement methods, laser scribing considerations, and determination of degradation rates and mechanisms from both laboratory and outdoor exposure tests.

Ross, R. G., Jr.↗
NASA NTRS1985

Light-induced effects-impacts to module performance measurements and reliability testing: An overview

The stability of solar cells is a key factor in determining the reliability of photovoltaic modules and is of great interest in the case of solar cells having a new technology which has not yet been fully developed. In particular this question arises with hydrogenated amorphous silicon (a-Si) solar cells because a-Si exhibits reversible light induced changes in its electronic properties, commonly referred to as the Staebler-Wronski effect (SWE). Continuous progress is being made in the peak conversion efficiencies of a-Si solar cells and efficiencies in excess of 11% have been achieved. However, stability is still a problem. ARCO Solar reports results on solar cells which, after over a year's exposure to sunlight, under open circuit conditions, still have about 7% conversion efficiency. Other results show a region of fast degradation for about a month, after which the degradation diminishes rapidly.

Wronski, C. R.↗
NASA NTRS1985

Thin-film module circuit design: Practical and reliability aspects

This paper will address several aspects of the design and construction of submodules based on thin film amorphous silicon (a-Si) p i n solar cells. Starting from presently attainable single cell characteristics, and a realistic set of specifications, practical module designs are discussed from the viewpoints of efficient designs, the fabrication requirements, and reliability concerns. The examples center mostly on series interconnected modules of the superstrate type with detailed discussions of each portion of the structure in relation to its influence on module efficiency. Emphasis is placed on engineering topics such as: area coverage, optimal geometries, and cost and reliability. Practical constraints on achieving optimal designs, along with some examples of potential pitfalls in the manufacture and subsequent performance of a-Si modules are discussed.

Daiello, R. V.↗
NASA NTRS1985

Interconnect resistance of photovoltaic submodules

Small area amorphous silicon solar cells generally have higher efficiencies than large interconnected submodules. Among the reasons for the differences in performance are the lack of large area uniformity, the effect of nonzero tin oxide sheet resistance, and possibly pinholes in the various layers. Another and usually small effect that can contribute to reduced performance of interconnected cells is the resistance of the interconnection i.e., the series resistance introduced by the metal to tin oxide contact through silicon. Proper processing problems to avoid poor contacts are discussed.

Volltrauer, H.↗
NASA NTRS1986

Solar cell reliability testing

The progress and initial data on accelerated stress tests on small amorphous silicon test samples from several manufacturers are reported. The test samples include both single and tandem junction devices.

Lathrop, J.↗
NASA NTRS1986

UV-T-RH combined environmental testing

A combined environmental aging chamber was developed at the Jet Propulsion Laboratory (JPL). The chamber has an ultraviolet (UV) light source that can be varied between 1 to 2 suns, temperature control from -40 to +175 C, and adjustable humidity. Results from two initial aging experiments (Tedlar and amorphous silicon colar cells) were presented.

Gonzalez, C. C.↗
NASA NTRS1987

Oxygen diffusion barrier coating

A method for coating a titanium panel or foil with aluminum and amorphous silicon to provide an oxygen barrier abrogating oxidation of the substrate metal is developed. The process is accomplished with known inexpensive procedures common in materials research laboratories, i.e., electron beam deposition and sputtering. The procedures are conductive to treating foil gage titanium and result in submicron layers which virtually add no weight to the titanium. There are no costly heating steps. The coatings blend with the substrate titanium until separate mechanical properties are subsumed by those of the substrate without cracking or spallation. This method appreciably increases the ability of titanium to mechanically perform in high thermal environments such as those witnessed on structures of space vehicles during re-entry

Unnam, Jalaiah↗
NASA NTRS1985

Observed changes in a-Si:H cell characteristics due to long term temperature stress

Determination of thermally induced degradation mechanisms affecting thin film amorphous silicon solar cells through the use of laboratory accelerated stress testing requires acquisition of specially constructed, individually addressable test cells and the development of highly repeatable instrumentation which is not influenced by short-term reversible optical effects. This paper illustrates these considerations by describing accelerated temperature stress procedures and test results for one type of a-Si:H cell. Observed electrical characteristic changes indicate that two types of stress induced mechanisms are operating - one of which is self limiting and can be observed at lower temperatures and one which continues to complete degradation. The self limiting mechanism can result in a dramatic improvement to cells having initially low Voc values.

Lathrop, Jay W.↗
NASA NTRS1988

Convection and mass-transport in laser-induced chemical vapor deposition

Gas flow and energy and species transport in laser-induced chemical vapor deposition (LICVD) of amorphous silicon films by silane pyrolysis are analyzed by finite element analysis of a two-dimensional model for the process. Spatial nonuniformity of the deposited film is shown to result from diffusion controlled transport of products between the beam and substrate. Deposition profiles are affected by buoyancy-driven convection only at increased gas pressures. Horizontal orientation of the reactor with respect to gravity is optimal because the stagnation-like flow, that results adjacent to the substrate, enhances mixing, and smoothes the film profile.

Patnaik, S.↗
NASA NTRS1987

The calculated influence of atmospheric conditions on solar cell ISC under direct and global solar irradiances

Calculations of the influence of atmospheric conditions on solar cell short-circuit current (Isc) are made using a recently developed computer model for solar spectral irradiance distribution. The results isolate the dependence of Isc on changes in the spectral irradiance distribution without the direct influence of the total irradiance level. The calculated direct normal irradiance and percent diffuse irradiance are given as a reference to indicate the expected irradiance levels. This method can be applied to the calibration of photovoltaic reference cells. Graphic examples are provided for amorphous silicon and monocrystalline silicon solar cells under direct normal and global normal solar irradiances.

Mueller, Robert L.↗