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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Method of Manufacturing a Micromechanical Oscillating Mass Balance

A micromechanical oscillating mass balance and method adapted for measuring minute quantities of material deposited at a selected location, such as during a vapor deposition process. The invention comprises a vibratory composite beam which includes a dielectric layer sandwiched between two conductive layers.The beam is positioned in a magnetic field. An alternating current passes through one conductive layers, the beam oscillates, inducing an output current in the second conductive layer, which is analyzed to determine the resonant frequency of the beam. As material is deposited on the beam, the mass of the beam increases and the resonant frequency of the beam shifts, and the mass added is determined.

Altemir, David A.↗
NASA NTRS1998

Tailoring Thin Film-Lacquer Coatings for Space Application

Thin film coatings have the capability of obtaining a wide range of thermal radiative properties, but the development of thin film coatings can sometimes be difficult and costly when trying to achieve highly specular surfaces. Given any space mission's thermal control requirements, there is often a need for a variation of solar absorptance (Alpha(s)), emittance (epsilon) and/or highly specular surfaces. The utilization of thin film coatings is one process of choice for meeting challenging thermal control requirements because of its ability to provide a wide variety of Alpha(s)/epsilon ratios. Thin film coatings' radiative properties can be tailored to meet specific thermal control requirements through the use of different metals and the variation of dielectric layer thickness. Surface coatings can be spectrally selective to enhance radiative coupling and decoupling. The application of lacquer to a surface can also provide suitable specularity for thin film application without the cost and difficulty associated with polishing.

Peters, Wanda C.↗
NASA NTRS2001

Novel Low Loss Wide-Band Multi-Port Integrated Circuit Technology for RF/Microwave Applications

In this paper, novel low loss, wide-band coplanar stripline technology for radio frequency (RF)/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-glass (SOG) as a dielectric layer, the etching of microvias for the vertical interconnects, the design methodology for the multiport circuits and their measured/simulated characteristics are graphically illustrated. The study shows that circuits with very low loss, large bandwidth, and compact size are feasible using this technology. This multilayer planar technology has potential to significantly enhance RF/microwave IC performance when combined with semi-conductor devices and microelectromechanical systems (MEMS).

Simons, Rainee N.↗
NASA NTRS2001

Novel Vertical Interconnects With 180 Degree Phase Shift for Amplifiers, Filters, and Integrated Antennas

In this paper, novel low loss, wide-band coplanar stripline technology for RF/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-glass (SOG) as a dielectric layer, the etching of microvias for the vertical interconnects, the design methodology for the multiport circuits and their measured/simulated characteristics are graphically illustrated. The study shows that circuits with very low loss, large bandwidth and compact size are feasible using this technology. This multilayer planar technology has potential to significantly enhance RF/microwave IC performance when combined with semiconductor devices and microelectromechanical systems (MEMS).

Goverdhanam, Kavita↗
NASA NTRS2003

Switching Oxide Traps

We consider radiation-induced charge trapping in SiO2 dielectric layers, primarily from the point of view of CMOS devices. However, SiO2 insulators are used in many other ways, and the same defects occur in other contexts. The key studies, which determined the nature of the oxide charge traps, were done primarily on gate oxides in CMOS devices, because that was the main radiation problem in CMOS at one time. There are two major reviews of radiation-induced oxide charge trapping already in the literature, which discuss the subject in far greater detail than is possible here. The first of these was by McLean et al. in 1989, and the second, ten years later, was intended as an update, because of additional, new work that had been reported. Basically, the picture that has emerged is that ionizing radiation creates electron-hole pairs in the oxide, and the electrons have much higher mobility than the holes. Therefore, the electrons are swept out of the oxide very rapidly by any field that is present, leaving behind any holes that escape the initial recombination process. These holes then undergo a polaron hopping transport toward the Si/SiO2 interface (under positive bias). Near the interface, some fraction of them fall into deep, relatively stable, long-lived hole traps. The nature and annealing behavior of these hole traps is the main focus of this paper.

Oldham, Timothy R.↗
NASA NTRS2003

Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x < 500 mW) applications. Although the electrical characteristics of RF MEMS switches far surpass any existing technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

Jah, Muzar↗
NASA NTRS2000

Efficient color display using low-absorption in-pixel color filters

A display system having a non-absorbing and reflective color filtering array and a reflector to improve light utilization efficiency. One implementation of the color filtering array uses a surface plasmon filter having two symmetric metal-dielectric interfaces coupled with each other to produce a transmission optical wave at a surface plasmon resonance wavelength at one interface from a p-polarized input beam on the other interface. Another implementation of the color filtering array uses a metal-film interference filter having two dielectric layers and three metallic films.

Wang, Yu↗
NASA NTRS2000

Low-cost thin-metal-film interference filters

Interference filters and filter arrays based on thin-metal film interference filters having at least one dielectric layer formed between two thin-metal films to form a Fabry-Perot cavity.

Wang, Yu↗
NASA NTRS1987

Radial/axial power divider/combiner

An electromagnetic power divider/combiner comprises N radial outputs (31) having equal powers and preferably equal phases, and a single axial output (20). A divider structure (1) and a preferably identical combiner structure (2) are broadside coupled across a dielectric substrate (30) containing on one side the network of N radial outputs (31) and on its other side a set of N equispaced stubs (42) which are capacitively coupled through the dielectric substrate (30) to the N radial outputs (31). The divider structure (1) and the combiner structure (2) each comprise a dielectric disk (12, 22, respectively) on which is mounted a set of N radial impedance transformers (14, 24, respectively). Gross axial coupling is determined by the thickness of the dielectric layer (30). Rotating the disks (12, 22) with respect to each other effectuates fine adjustment in the degree of axial coupling.

Vaddiparty, Yerriah P.↗
NASA NTRS2009

Electrically Variable or Programmable Nonvolatile Capacitors

Electrically variable or programmable capacitors based on the unique properties of thin perovskite films are undergoing development. These capacitors show promise of overcoming two important deficiencies of prior electrically programmable capacitors: Unlike in the case of varactors, it is not necessary to supply power continuously to make these capacitors retain their capacitance values. Hence, these capacitors may prove useful as components of nonvolatile analog and digital electronic memories. Unlike in the case of ferroelectric capacitors, it is possible to measure the capacitance values of these capacitors without changing the values. In other words, whereas readout of ferroelectric capacitors is destructive, readout of these capacitors can be nondestructive. A capacitor of this type is a simple two terminal device. It includes a thin film of a suitable perovskite as the dielectric layer, sandwiched between two metal or metal oxide electrodes (for example, see Figure 1). The utility of this device as a variable capacitor is based on a phenomenon, known as electrical-pulse-induced capacitance (EPIC), that is observed in thin perovskite films and especially in those thin perovskite films that exhibit the colossal magnetoresistive (CMR) effect. In EPIC, the application of one or more electrical pulses that exceed a threshold magnitude (typically somewhat less than 1 V) gives rise to a nonvolatile change in capacitance. The change in capacitance depends on the magnitude duration, polarity, and number of pulses. It is not necessary to apply a magnetic field or to cool the device below (or heat it above) room temperature to obtain EPIC. Examples of suitable CMR perovskites include Pr(1-x)Ca(x)MnO3, La(1-x)S-r(x)MnO3,and Nb(1-x)Ca(x)MnO3. Figure 2 is a block diagram showing an EPIC capacitor connected to a circuit that can vary the capacitance, measure the capacitance, and/or measure the resistance of the capacitor.

Shangqing, Liu↗
NASA NTRS2004

Multilayer Dielectric Transmissive Optical Phase Modulator

A multilayer dielectric device has been fabricated as a prototype of a low-loss, low-distortion, transmissive optical phase modulator that would provide as much as a full cycle of phase change for all frequency components of a transmitted optical pulse over a frequency band as wide as 6.3 THz. Arrays of devices like this one could be an alternative to the arrays of mechanically actuated phase-control optics (adaptive optics) that have heretofore been used to correct for wave-front distortions in highly precise optical systems. Potential applications for these high-speed wave-front-control arrays of devices include agile beam steering, optical communications, optical metrology, optical tracking and targeting, directional optical ranging, and interferometric astronomy. The device concept is based on the same principle as that of band-pass interference filters made of multiple dielectric layers with fractional-wavelength thicknesses, except that here there is an additional focus on obtaining the desired spectral phase profile in addition to the device s spectral transmission profile. The device includes a GaAs substrate, on which there is deposited a stack of GaAs layers alternating with AlAs layers, amounting to a total of 91 layers. The design thicknesses of the layers range from 10 nm to greater than 1 micrometer. The number of layers and the thickness of each layer were chosen in a computational optimization process in which the wavelength dependences of the indices of refraction of GaAs and AlAs were taken into account as the design was iterated to maximize the transmission and minimize the group-velocity dispersion for a wavelength band wide enough to include all significant spectral components of the pulsed optical signal to be phase modulated.

Keys, Andrew Scott↗
NASA NTRS2010

GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer....

AlGaN/GaN↗
NASA NTRS2008

High Efficiency Submillimeter-Wave Imaging Array

The period of a focal array is limited by the angular sampling and the f number of the system. This fact will limit the efficiency of imaging array systems to around 50%. Recently it been demonstrated that the use of a dielectric layer on top of an array of apertures can improve this efficiency limit. In this paper, we describe a similar structure that improves the efficiency in imaging applications and that it is easy to manufacture due to its compatibility with planar lithographic techniques.

Llombart, Nuria↗
NASA NTRS2016

Processing and Characterization of Thousand-Hour 500 C Durable 4H-SiC JFET Integrated Circuits

This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 hours of stable electrical operation at 500 C in air ambient. These ICs are based on 4H-SiC junction field effect transistor (JFET) technology that integrates hafnium ohmic contacts with TaSi2 interconnects and SiO2 and Si3N4 dielectric layers over approximately 1-micrometer scale vertical topology. Following initial burn-in, important circuit parameters remain stable for more than 1000 hours of 500 C operational testing. These results advance the technology foundation for realizing long-term durable 500 C ICs with increased functional capability for sensing and control combustion engine, planetary, deep-well drilling, and other harsh-environment applications.

Microelectronics↗
NASA NTRS2016

Processing and Characterization of Thousand-Hour 500 C Durable 4H-SiC JFET Integrated Circuits

This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 hours of stable electrical operation at 500 C in air ambient. These ICs are based on 4H-SiC junction field effect transistor (JFET) technology that integrates hafnium ohmic contacts with TaSi2 interconnects and SiO2 and Si3N4 dielectric layers over 1-m scale vertical topology. Following initial burn-in, important circuit parameters remain stable for more than 1000 hours of 500 C operational testing. These results advance the technology foundation for realizing long-term durable 500 C ICs with increased functional capability for sensing and control combustion engine, planetary, deep-well drilling, and other harsh-environment applications.

JFET↗
NASA NTRS2020

Cramer-Rao Lower Bound for SoOp-R-Based Root-Zone Soil Moisture Remote Sensing

Signals of opportunity (SoOp) reflectometry (SoOp-R) is a maturing field for geophysical remote sensing as evidenced by the growing number of airborne and spaceborne experiments. As this approach receives more attention, it is worth analyzing SoOp-R’s capabilities to retrieve subsurface soil moisture (SM) by leveraging communication and navigation satellite transmitters. In this research, the CRLB is used to identify the effects of variable SoOp-R parameters on the best achievable estimation error for root-zone soil moisture (RZSM). This study investigates the use of multiple frequency, polarization, and incidence angle measurement configurations on a two-layered dielectric profile. The results also detail the effects of variable SM conditions on the capability of SoOp-R systems to predict subsurface SM. The most prevalent observation is the importance of using at least two frequencies to limit uncertainties from subsurface SM estimates. If at least two frequencies are used, the CRLB of a profile is retrievable within the root-zone depending on the surface SM content as well as the number of independent measurements of the profile. For a depth of 30 cm, it is observed that a CRLB corresponding to 4% RZSM estimation accuracy is achievable with as few as 2 dual-frequency-based SoOp-R measurements. For this depth, increasing number of measurements provided by polarization and incidence angle allow for sensing of increasingly wet SM profile structures. This study, overall, details a methodology by which SoOp-R receiver system can be designed to achieve a desired CRLB using a trade-off study between the available measurements and SM profile.

Signals of Opportunity (SoOp)↗
NASA NTRSDate not supplied

Considerations on Electrolytic Conductivity Measurement for Monitoring of Ionic Silver Biocide Dosing

NASA interest in ionic silver (Ag+) as a biocide for spacecraft potable water systems motivates the development of Ag+ concentration sensors to ensure nominal dosing. The electrolytic conductivity change of highly-purified potable water is linearly related to the concentration of chemically-dosed Ag+ and could serve as a useful proxy measurement, while the conductivity change during electrolytic dosing may be less so, depending on the influent water chemistry and electrolytic efficiency. Understanding and mitigating the potentially deleterious effects of Ag+ interaction with conductivity measurement systems requires investigation. Issues associated with traditional conductivity cells, which rely on wetted(typically metal or graphite) electrodes, and capacitively-coupled contactless conductivity detection (C4D) for this application are considered. Traditional conductivity cells may potentially be subject to significant excitation-induced or auto-galvanic reduction of Ag+. These may result in Ag+ depletion or electrode fouling and associated measurement error. Proper selection of electrode material, excitation parameters, and cell geometry may limit such effects. C4D uses electrodes placed outside an inert, insulating material, with dielectric polarization enabling the production of an electric field and resultant current across the analyte solution. This approach could potentially mitigate problems with Ag+ depletion and fouling by eliminating the possibility of auto-galvanic deposition and reducing the Faradaic current density. However, it is necessary to confirm C4D performance at very low conductivity levels and to determine if long-term operation produces conductive deposits, which could result in measurement error. A commercial C4D system with 1/16” (1.59 mm)outer diameter flow tubing and claimed performance in the conductivity range appropriate for this application was identified, and its sensitivity in the upper parts of this range was confirmed in a preliminary experiment. A concept for a C4D detector that could allow for full rate flow-through using planar electrodes and thin-film dielectric layers is discussed.

silver↗
NASA NTRS2023

Evaluation of Elements used for Manufacturing of NanoLam Metallized Polymer Film Capacitors

Metallized polymer film capacitors (MPFC) manufactured by NanoLam technology have a better volumetric efficiency and performance that may exceed the reliability of conventional MPFCs typically used in power and high voltage systems that require high insulation resistance and low power losses. These capacitors can be also an effective replacement for electrolytic and stacked ceramic capacitors currently used in space applications looking to save significant volume and mass. This report evaluates the effects of environmental conditions including radiation and storage at room and high temperatures on the characteristics of NanoLam elements used in the production of MPFCs. Assessments of the reliability acceleration factors and predictions for the useful life are made based on highly accelerated life tests (HALT) using distributions of times to parametric failures at different stress conditions. It has been shown that even a relatively small amount of moisture absorbed at room environments in the dielectric layers may substantially change the probability of failure. In the presence of moisture, degradation processes that started after voltage application continue with time during storage.

Metallized polymer film capacitors (MPFC)↗