Search NASA⌕ Search

SEARCH · Search NASA

Results for “high temperature electronics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Pressure Sensor and Telemetry Methods for Measurement While Drilling in Geothermal Wells (Final Technical Report)

The development and demonstration in this digital telemetry project has brought SiC-based high temperature electronics to a new level of complexity and integration with the active electronic devices and the packaging materials operating at 300°C for greater than 2000 hours. Our highest level of integration is a 6x6mm die with 474 transistors with the most complex functionality to date. Advances were made in the area of device modeling and fabrication, circuit simulation and design, device testing, and packaging. The technologies developed here would help enable sensor systems in enhanced geothermal systems, as well as other applications with high temperature requirements.

15 GEOTHERMAL ENERGY↗
DOE OSTI2024

Toward electron temperature profiles in hot-dense plasmas from x-ray spectral ensembles

High repetition rate laser systems enable new strategies for diagnosing plasma behavior with large datasets. Here, we define an ensemble technique that relies on randomized targeting of x-ray tracer micro-stripes. On each shot, a high-intensity laser pulse is focused on a solid target with Ti tracer stripes embedded in an Al foil, randomly targeting a micro-stripe, a portion of a stripe, or a gap between stripes. High-resolution, time-integrated x-ray spectrometers capture line emission from the portion of the micro-stripe that is heated to sufficiently high electron temperatures. Accumulation of many such cases is used to construct ensemble distributions of x-ray line intensities that encompass all relative offsets of the laser focus to the micro-stripe centers. Synthetic intensity distributions are likewise generated using collisional-radiative modeling. Bayesian fitting of modeled to measured intensity distributions establishes the most likely radial temperature profiles, enabling comparison to hydrodynamic models and calling into question the cylindrical symmetry of these micro-stripe-embedded systems. Ensemble techniques have significant potential for high-energy-density plasma diagnostics, especially with the advent of high repetition rate experiments.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Morphological instability of Ag films caused by phase transition in the underlying Ta barrier layer

Wide-bandgap (WBG) semiconductor technologies are maturing and may provide increased device performance in many fields of applications, such as high-temperature electronics. However, there are still issues regarding the stability and reliability of WBG devices. Of particular importance is the high-temperature stability of interconnects for electronic systems based on WBG-semiconductors. For metallization without proper encapsulation, morphological degradation can occur at elevated temperatures. Sandwiching Ag films between Ta and/or TaN layers in this study is found to be electrically and morphologically stabilize the Ag metallization up to 800 °C, compared to 600 °C for uncapped films. However, the barrier layer plays a key role and TaN is found to be superior to Ta, resulting in the best achieved stability, whereas the difference between Ta and TaN caps is negligible. The β-to-α phase transition in the underlying Ta barrier layer is identified as the major cause responsible for the morphological instability observed above 600 °C. It is shown that this phase transition can be avoided using a stacked Ta/TaN barrier.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2019

Long Duration Venus Probes and Landers

Planetary probes have long been a tool used by scientists to gain early clues on environments and systems of new planetary targets. This not only fueled the scientific process but also helped prepare for future missions, such as landers, and helped ensure their success. Venus, Earth's sister planet, has been the target of more probes and landers than any other body in our solar system except for Earth and yet many fundamental questions are unanswered. Challenge for Venus Surface Science: This lack of knowledge is a result of the challenging Venus environments. Remote sensing of the surface and portions of the atmosphere is difficult at best due to the thick layers of sulfuric acid clouds and the high pressure supercritical CO2 atmosphere below those clouds. This has hampered the ability of orbiting missions to provide us insight into surface features and processes and thus hides potential clues on interior process from our view. Surface probes and landers face an even more daunting challenge, which is the extreme temperature, pressure and unfriendly chemical composition of the near surface atmosphere. Over 10 assets have landed on the surface yet the longest surviving asset Venera-13 lasted only 127 minutes before succumbing to the extreme temperature. While this and other landers provided valuable new data, the short life impacted ability to understand any temporal processes, for example meteorology, seismic active, and therefore very little is known about the interior and surface atmosphere interactions. New Capability Offering Potential Solutions: Re-cent developments by NASA are offering hope of overcoming the technical challenges of surface operations and life with the use of high temperature electronics and systems. Wide band gap, SiC based electronics have been demonstrated to function successfully for extended periods of time both at 500C, Venus surface temperatures as well as when temperature is combined with the reactive chemistry of the surface atmosphere and the high pressures (over 90 bar pressure at the surface). In addition to electronics a number of other subsystems are in development including power in the form of high temperature batteries and power management devices, communications including antennas, transmitters and other components, materials, and structures and mechanisms. These are all activities under NASA's Long Lived In situ Solar System Exploration (LLISSE) project. Other activities are also funded under NASA's HOTTech program.

Kremic, T.↗
DOE OSTI2013

Electron attachment to C{sub 2} fluorocarbon radicals at high temperature

Thermal electron attachment to the radical species C{sub 2}F{sub 3} and C{sub 2}F{sub 5} has been studied over the temperature range 300–890 K using the Variable Electron and Neutral Density Attachment Mass Spectrometry technique. Both radicals exclusively undergo dissociative attachment to yield F{sup −}. The rate constant for C{sub 2}F{sub 5} shows little dependence over the temperature range, remaining ∼4 × 10{sup −9} cm{sup 3} s{sup −1}. The rate constant for C{sub 2}F{sub 3} attachment rises steeply with temperature from 3 × 10{sup −11} cm{sup 3} s{sup −1} at 300 K to 1 × 10{sup −9} cm{sup 3} s{sup −1} at 890 K. The behaviors of both species at high temperature are in agreement with extrapolations previously made from data below 600 K using a recently developed kinetic modeling approach. Measurements were also made on C{sub 2}F{sub 3}Br and C{sub 2}F{sub 5}Br (used in this work as precursors to the radicals) over the same temperature range, and, for C{sub 2}F{sub 5}Br as a function of electron temperature. The attachment rate constants to both species rise with temperature following Arrhenius behavior. The attachment rate constant to C{sub 2}F{sub 5}Br falls with increasing electron temperature, in agreement with the kinetic modeling. The current data fall in line with past predictions of the kinetic modeling approach, again showing the utility of this simplified approach.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1991

High temperature superconductor analog electronics for millimeter-wavelength communications

The performance of high temperature superconductor (HTS) passive microwave circuits up to X-band was encouraging when compared to their metallic counterparts. The extremely low surface resistance of HTS films up to about 10 GHz enables a reduction in loss by as much as 100 times compared to copper when both materials are kept at about 77 K. However, a superconductor's surface resistance varies in proportion to the frequency squared. Consequently, the potential benefit of HTS materials to millimeter-wave communications requires careful analysis. A simple ring resonator was used to evaluate microstrip losses at Ka-band. Additional promising components were investigated such as antennas and phase shifters. Prospects for HTS to favorable impact millimeter-wave communications systems are discussed.

Romanofsky, R. R.↗
NASA NTRS1991

High temperature superconductor analog electronics for millimeter-wavelength communications

The performance of high temperature superconductor (HTS) passive microwave circuits up to X-band was encouraging when compared to their metallic counterparts. The extremely low surface resistance of HTS films up to about 10 GHz enables a reduction in loss by as much as 100 times compared to copper when both materials are kept at about 77 K. However, a superconductor's surface resistance varies in proportion to the frequency squared. Consequently, the potential benefit of HTS materials to millimeter-wave communications requires careful analysis. A simple ring resonator was used to evaluate microstrip losses at Ka-band. Additional promising components were investigated such as antennas and phase shifters. Prospects for HTS to favorable impact millimeter-wave communications systems are discussed.

Romanofsky, R. R.↗
NASA NTRS2024

Mark I Silicon Carbide Integrated Circuit Test Oven Assembly and Programming Guide

This report provides a parts list, with assembly and programming instructions for building firstgeneration (Mark I) compact test ovens; this oven design is customized for prolonged functional electrical testing of prototype silicon carbide (SiC) devices at temperatures up to 500 °C (932 °F). The general approach of using multiple compact ovens to perform long-term, high-temperature electronics testing efficiently is described in a conference paper (Izadnegahdar, Alain, et al.: Alternative Setup for LongDuration Low-Duty-Cycle 600 °C Ambient Testing of SiC Integrated Circuits. International Microelectronics Assembly and Packaging Society (iMAPS) HiTECH 2021 Technology Crossover Extravaganza, 2021), available at https://ntrs.nasa.gov/citations/20210011676. The new Mark I oven design described here offers several significant improvements over the compact oven described in that paper. For example, it is constructed from commercial off-the-shelf (COTS) components and requires minimal assembly. Much of the work involves drilling holes in the two aluminum project boxes, which contain the control electronics and the oven itself. The cost of components is less than $200 (USD) per oven, which makes constructing multiple ovens affordable. In addition, the two-box design separates the high-temperature heater from the electronics, which keeps the electronics cool, prolonging the lifetime of these components.

high temperature↗
DOE OSTI2024

Review and meta-analysis of electron temperatures from high-intensity laser–solid interactions

The accelerated electron spectrum from high-intensity laser–solid interaction is often conveniently described using a Boltzmann distribution, whose temperature is known within the field as the hot-electron temperature. The importance of the electron temperature is highlighted by the sheer number of experimental and simulation studies on the subject over the past three decades. Recently, multi-kJ, multi-ps pulses have yielded electron spectra with temperatures far beyond the expected ponderomotive result. Expressions that predict the electron temperature considering laser parameters beyond intensity and wavelength have been developed, albeit using small datasets. In this review, we present what is, to the best of our knowledge, the largest dataset of electron temperatures gathered from experimental measurements and particle-in-cell simulations. This dataset allows us to compare existing analytical and empirical hot-electron temperature scaling models over a wide parameter range. We also develop new scaling models that incorporate the laser pulse duration of the laser and the plasma scale length. Three models that include pulse-duration and scale length dependence are especially successful at predicting both simulated and experimental data. The dataset will soon be made publicly available to encourage further investigation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Eucken correction in high-temperature gases with electronic excitation

In the present paper, thermal conductivity coefficient of high-temperature molecular and atomic gases with excited electronic states is studied using both the kinetic theory algorithm developed by authors earlier and the well known simple expression for the thermal conductivity coefficient proposed by Eucken and generalized by Hirschfelder. The influence of large collision diameters of excited states on the thermal conductivity is discussed. The limit of validity of the Eucken correction is evaluated on the basis of the kinetic theory calculations; an improved model suitable for air species under high-temperature conditions is proposed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1984

Electron-ion collisions in high temperature plasmas

Several newly observed electron-ion collision phenomena that occur in high-temperature plasmas containing electrons and ions of energies 10-10,000 eV, or temperature of 10 to the 5th to 10 to the 8th K, are reviewed. These are the phenomena of dielectronic recombination, excitation-autoionization, and electron energy-loss scattering as measured in crossed (90 deg) and merged electron-ion beam experiments.

Chutjian, A.↗
DOE OSTI2015

The first taste of a hot channel in interplanetary space

A hot channel (HC) is a high temperature (∼10 MK) structure in the inner corona first revealed by the Atmospheric Imaging Assembly on board the Solar Dynamics Observatory. Eruptions of HCs are often associated with flares and coronal mass ejections (CMEs). Results of previous studies have suggested that an HC is a good proxy for a magnetic flux rope (MFR) in the inner corona as well as another well known MFR candidate, the prominence-cavity structure, which has a normal coronal temperature (∼1–2 MK). In this paper, we report a high temperature structure (HTS, ∼1.5 MK) contained in an interplanetary CME induced by an HC eruption. According to the observations of bidirectional electrons, high temperature and density, strong magnetic field, and its association with the shock, sheath, and plasma pile-up region, we suggest that the HTS is the interplanetary counterpart of the HC. The scale of the measured HTS is around 14 R {sub ⊙}, and it maintained a much higher temperature than the background solar wind even at 1 AU. It is significantly different from the typical magnetic clouds, which usually have a much lower temperature. Our study suggests that the existence of a corotating interaction region ahead of the HC formed a magnetic container to inhibit expansion of the HC and cool it down to a low temperature.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2012

Diamond/aluminium nitride composites for efficient thermal management applications

Synthetic diamond/AlN composite materials have been fabricated by a combination of microwave plasma-assisted chemical vapor deposition and molecular beam epitaxy. These wide band gap semiconductor heterojunctions show promises for many applications, including thermal management, deep ultraviolet light emitting devices, and high power and high temperature electronics. Here, we report results of an interface study of polycrystalline diamond layers grown on single crystal AlN(0001). High resolution transmission microscopy revealed atomically sharp interfaces between diamond and AlN. Temperature dependent Raman spectroscopy measurements showed reduced thermal resistance on diamond-coated AlN substrates compared to uncoated AlN at temperatures above 330 K.

36 MATERIALS SCIENCE↗
NASA NTRSDate not supplied

Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications

Electronic devices capable of operation at 500°C are required for long term Venus surface missions, as well as for in situ monitoring and control of next generation aeronautical engines. High temperature sensors and electronics can also find many applications in military, and energy and automobile industries. Various silicon carbide (SiC) sensors and electronic devices have been developed for operation at 500 °C, and a compatible packaging system is needed for long term test and deployment of these high temperature devices. High temperature co-fired ceramics (HTCC) alumina with platinum (Pt) conductor was proposed for high temperature electronic packaging. A prototype Pt/HTCC alumina packaging system including chip-level package and circuit board has been briefly reported previously for long-term electrical testing of SiC integrated circuits at 500 °C, and brief testing at much higher temperatures. HTCC alumina is an excellent dielectric material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. Pt is chemically noble and can be co-fired with HTCC alumina in air ambient producing a viable electronic packaging material system for high temperature applications. This paper presents a more detailed description of this packaging system including prototype low power packages and circuit boards based on HTCC alumina and Pt metallization for 500°C and other harsh environment applications. The key technical considerations for chip-level packaging and circuit board assembly, including materials and processes for 500 °C durable wire-bonding and SiC die attach, and integration of multi-chip circuit boards, are presented. Experimental test results of this packaging approach applied to SiC integrated circuits at 500 °C and 700°C are discussed as well.

High temperature↗
DOE OSTI2020

Direct imaging of plasma waves using ultrafast electron microscopy

A femtosecond plasma imaging modality based on a new development of ultrafast electron microscope is introduced. We investigated the laser-induced formation of high-temperature electron microplasmas and their subsequent non-equilibrium evolution. Based on a straightforward field imaging principle, we directly retrieve detailed information about the plasma dynamics, including plasma wave structures, particle densities, and temperatures. We discover that directly subjected to a strong magnetic field, the photo-generated microplasmas manifest in novel transient cyclotron echoes and form new wave states across a broad range of field strengths and different laser fluences. Intriguingly, the transient cyclotron waves morph into a higher frequency upper-hybrid wave mode with the dephasing of local cyclotron dynamics. The quantitative real-space characterizations of the non-equilibrium plasma systems demonstrate the feasibilities of a new microscope system in studying the plasma dynamics or transient electric fields with high spatiotemporal resolutions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Atom probe study of grain boundary segregation in technically pure molybdenum

Molybdenum, a metal with excellent physical, chemical and high-temperature properties, is an interesting material for applications in lighting-technology, high performance electronics, high temperature furnace construction and coating technology. However, its applicability as a structural material is limited because of the poor oxidation resistance at high temperatures and a brittle-to-ductile transition around room temperature, which is influenced by the grain size and the content of interstitial impurities at the grain boundaries. Due to the progress of the powder metallurgical production during the last decades, the amount of impurities in the current quality of molybdenum has become so small that surface sensitive techniques are not applicable anymore. Therefore, the atom probe, which allows the detection of small amounts of impurities as well as their location, seems to be a more suitable technique. However, a site-specific specimen preparation procedure for grain boundaries in refractory metals with a dual focused ion beam/scanning electron microscope is still required. The present investigation describes the development and successful application of such a site-specific preparation technique for grain boundaries in molybdenum, which is significantly improved by a combination with transmission electron microscopy. This complimentary technique helps to improve the visibility of grain boundaries during the last preparation steps and to evidence the presence of grain and subgrain boundaries without segregants in atom probe specimens. Furthermore, in industrially processed and recrystallized molybdenum sheets grain boundary segregation of oxygen, nitrogen and potassium is successfully detected close to segregated regions which are believed to be former sinter pores. - Highlights: • First study of grain boundary segregation in molybdenum by atom probe • Site-specific preparation technique by FIB and TEM successfully developed • Grain boundary segregation of oxygen, nitrogen and potassium found • Segregation in former sinter-pores detected • Presence of grain boundaries without segregation evidenced.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Specific features of the radial distributions of plasma parameters in the initial segment of a supersonic jet generated by a pulsed capillary discharge

Results are presented from spectroscopic studies of the initial segment of a supersonic plasma jet generated by a pulsed capillary discharge with an ablative carbon-containing polymer wall. Specific features of the spatial distributions of the electron density and intensities of spectral components caused, in particular, by the high electron temperature in the central zone, much exceeding the normal temperature, as well as by the high nonisobaricity of the initial segment of the supersonic jet, are revealed. Measurements of the radiative properties of the hot jet core (the intensity and profile of the H{sub α} and H{sub β} Balmer lines and the relative intensities of C II lines) with high temporal (1–50 μs) and spatial (30–50 μm) resolutions made it possible to determine general features of the pressure and temperature distributions near the central shock. The presence of molecular components exhibiting their emission properties at the periphery of the plasma jet allowed the authors to estimate the parameters of the plasma in the jet region where “detached” shock waves form.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗