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Results for “integrated silicon photonics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Vacuum deposition of χ(2) nonlinear organic single crystal films on silicon

Integrating second order nonlinear (χ(2)) optical materials on chip is an ongoing challenge for Si photonics. Noncentrosymmetric molecular crystals have the potential to deliver high χ(2) nonlinearity with good thermal stability, but so far have been limited to growth from solution or the melt, which are both difficult to control and scale up in manufacturing. Here, we show that large (>100 μm) single crystal domains of the nonlinear molecule 2-[3-(4-hydroxystyryl)-5,5-dimethylcyclohex-2-enylidene] malononitrile (OH1) can be grown monolithically on either glass or Si via vacuum evaporation, followed by a short thermal annealing step. The crystallites are tens of nanometer thick and exhibit strong second harmonic generation with their primary χ(2) tensor component lying predominantly in plane. Remarkably, we find that a single domain can grow uninterrupted through nearby channels etched on a Si wafer, which may provide a path to integrate OH1 on Si or Si3N4 waveguides for a broad range of χ(2)-based photonic integrated circuit functionality.

Physics↗
DOE OSTI2024

Programmable quantum emitter formation in silicon

Abstract Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using femtosecond laser pulses in combination with hydrogen-based defect activation and passivation at a single center level. By choosing forming gas (N 2 /H 2 ) during thermal annealing of carbon-implanted silicon, we can select the formation of a series of hydrogen and carbon-related quantum emitters, including T and C i centers while passivating the more common G-centers. The C i center is a telecom S-band emitter with promising optical and spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the C i center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen for programmable formation of selected quantum emitters.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Ultra-low-power second-order nonlinear optics on a chip

Second-order nonlinear optical processes convert light from one wavelength to another and generate quantum entanglement. Creating chip-scale devices to efficiently control these interactions greatly increases the reach of photonics. Existing silicon-based photonic circuits utilize the third-order optical nonlinearity, but an analogous integrated platform for second-order nonlinear optics remains an outstanding challenge. Here we demonstrate efficient frequency doubling and parametric oscillation with a threshold of tens of micro-watts in an integrated thin-film lithium niobate photonic circuit. We achieve degenerate and non-degenerate operation of the parametric oscillator at room temperature and tune its emission over one terahertz by varying the pump frequency by hundreds of megahertz. Finally, we observe cascaded second-order processes that result in parametric oscillation. These resonant second-order nonlinear circuits will form a crucial part of the emerging nonlinear and quantum photonics platforms.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Single Photon Emitters Coupled to Photonic Wire bonds

This project will test the coupling of light emitted from silicon vacancy and nitrogen vacancy defects in diamond into additively manufactured photonic wire bonds toward integration into an "on-chip quantum photonics platform". These defects offer a room-temperature solid state solution for quantum information technologies but suffer from issues such as low activation rate and variable local environments. Photonic wire bonding will allow entanglement of pre-selected solid-state defects alleviating some of these issues and enable simplified integration with other photonic devices. These developments could prove to be key technologies to realize quantum secured networks for national security applications.

42 ENGINEERING↗
DOE OSTI2023

Neuromorphic Photonics Based on Phase Change Materials

Neuromorphic photonics devices based on phase change materials (PCMs) and silicon photonics technology have emerged as promising solutions for addressing the limitations of traditional spiking neural networks in terms of scalability, response delay, and energy consumption. In this review, we provide a comprehensive analysis of various PCMs used in neuromorphic devices, comparing their optical properties and discussing their applications. We explore materials such as GST (Ge 2 Sb 2 Te 5 ), GeTe-Sb 2 Te 3 , GSST (Ge 2 Sb 2 Se 4 Te 1 ), Sb 2 S 3 /Sb 2 Se 3 , Sc 0.2 Sb 2 Te 3 (SST), and In 2 Se 3 , highlighting their advantages and challenges in terms of erasure power consumption, response rate, material lifetime, and on-chip insertion loss. By investigating the integration of different PCMs with silicon-based optoelectronics, this review aims to identify potential breakthroughs in computational performance and scalability of photonic spiking neural networks. Further research and development are essential to optimize these materials and overcome their limitations, paving the way for more efficient and high-performance photonic neuromorphic devices in artificial intelligence and high-performance computing applications.

36 MATERIALS SCIENCE↗
NASA NTRS1993

Micro-opto-mechanical devices and systems using epitaxial lift off

The integration of high quality, single crystal thin film gallium arsenide (GaAs) and indium phosphide (InP) based photonic and electronic materials and devices with host microstructures fabricated from materials such as silicon (Si), glass, and polymers will enable the fabrication of the next generation of micro-opto-mechanical systems (MOMS) and optoelectronic integrated circuits. Thin film semiconductor devices deposited onto arbitrary host substrates and structures create hybrid (more than one material) near-monolithic integrated systems which can be interconnected electrically using standard inexpensive microfabrication techniques such as vacuum metallization and photolithography. These integrated systems take advantage of the optical and electronic properties of compound semiconductor devices while still using host substrate materials such as silicon, polysilicon, glass and polymers in the microstructures. This type of materials optimization for specific tasks creates higher performance systems than those systems which must use trade-offs in device performance to integrate all of the function in a single material system. The low weight of these thin film devices also makes them attractive for integration with micromechanical devices which may have difficulty supporting and translating the full weight of a standard device. These thin film devices and integrated systems will be attractive for applications, however, only when the development of low cost, high yield fabrication and integration techniques makes their use economically feasible. In this paper, we discuss methods for alignment, selective deposition, and interconnection of thin film epitaxial GaAs and InP based devices onto host substrates and host microstructures.

Camperi-Ginestet, C.↗
NASA NTRS1998

Design and Performance of a Miniature Lidar Wind Profiler (MLWP)

The directional velocity of the wind is one of the most critical components for understanding meteorological and other dynamic atmospheric processes. Altitude-resolved wind velocity measurements, also known as wind profiles or soundings, are especially necessary for providing data for meteorological forecasting and overall global circulation models (GCM's). Wind profiler data are also critical in identifying possible dangerous weather conditions for aviation. Furthermore, a system has yet to be developed for wind profiling from the surface of Mars which could also meet the stringent requirements on size, weight, and power of such a mission. Obviously, a novel wind profiling approach based on small and efficient technology is required to meet these needs. A lidar system based on small and highly efficient semiconductor lasers is now feasible due to recent developments in the laser and detector technologies. The recent development of high detection efficiency (50%), silicon-based photon-counting detectors when combined with high laser pulse repetition rates and long receiver integration times has allowed these transmitter energies to be reduced to the order of microjoules per pulse. Aerosol lidar systems using this technique have been demonstrated for both Q-switched, diode-pumped solid-state laser transmitters (lambda = 523 nm) and semiconductor diode lasers (lambda = 830 nm); however, a wind profiling lidar based on this technique has yet to be developed. We will present an investigation of a semiconductor-laser-based lidar system which uses the "edge-filter" direct detection technique to infer Doppler frequency shifts of signals backscattered from aerosols in the planetary boundary layer (PBL). Our investigation will incorporate a novel semiconductor laser design which mitigates the deleterious effects of frequency chirp in pulsed diode lasers, a problem which has limited their use in such systems in the past. Our miniature lidar could be used on a future Mars lander and perhaps find its own niche in terrestrial applications due to its potential low cost an small size.

Cornwell, Donald M., Jr.↗
DOE OSTI2023

High–Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Integrated Silicon Fourier Transform Spectrometer with Broad Bandwidth and Ultra‐High Resolution

An ultra-high resolution Fourier transform spectrometer (FTS) realized in silicon photonic platform that can operate with broad band, narrow band as well as a combination of broad band and narrow band signals is reported. The ultra-high resolution of the spectrometer is achieved by exploiting multiple techniques: a Michelson interferometer (MI) structure to increase the optical path delay (OPD), a hybrid waveguide design to reduce insertion loss, an optimized heater and air trenches to achieve higher thermal efficiency. Here, to further increase the OPD of the spectrometer to increase its resolution, a novel multiple interferometers approach is employed which combines balanced MI with N statically imbalanced MIs, thereby increasing the OPD of a single MI by factor of N + 1. An FTS spectrometer consisting of N = 2 such MIs is fabricated and experimentally characterized using unknown broad bandwidth input signal spectra of about 180 nm centered around 1550 nm, a narrow line laser input signal, and a combination of broad and narrow band signals demonstrating spectral resolution of about 0.16 nm.

Li, Ang↗
NASA NTRS2017

Monocrystalline Silicon and the Meta-Shell Approach to Building X-Ray Astronomical Optics

Angular resolution and photon-collecting area are the two most important factors that determine the power of an X-ray astronomical telescope. The grazing incidence nature of X-ray optics means that even a modest photon-collecting area requires an extraordinarily large mirror area. This requirement for a large mirror area is compounded by the fact that X-ray telescopes must be launched into, and operated in, outer space, which means that the mirror must be both lightweight and thin. Meanwhile the production and integration cost of a large mirror area determines the economical feasibility of a telescope. In this paper we report on a technology development program whose objective is to meet this three-fold requirement of making astronomical X-ray optics: (1) angular resolution, (2) photon-collecting area, and (3) production cost. This technology is based on precision polishing of monocrystalline silicon for making a large number of mirror segments and on the meta-shell approach to integrate these mirror segments into a mirror assembly. The meta-shell approach takes advantage of the axial or rotational symmetry of an X-ray telescope to align and bond a large number of small, lightweight mirrors into a large mirror assembly. The most important features of this technology include: (1) potential to achieve the highest possible angular resolution dictated by optical design and diffraction; and (2) capable of implementing every conceivable optical design, such as Wolter-I, Wolter-Schwarzschild, as well as other variations to one or another aspect of a telescope. The simplicity and modular nature of the process makes it highly amenable to mass production, thereby making it possible to produce very large X-ray telescopes in a reasonable amount of time and at a reasonable cost. As of June 2017, the basic validity of this approach has been demonstrated by finite element analysis of its structural, thermal, and gravity release characteristics, and by the fabrication, alignment, bonding, and X-ray testing of mirror modules. Continued work in the coming years will raise the technical readiness of this technology for use by SMEX, MIDEX, Probe, as well as major flagship missions.

Zhang, William W.↗
DOE OSTI2021

Reconfigurable plasma-dielectric hybrid photonic crystal as a platform for electromagnetic wave manipulation and computing

The introduction of 3D printing has enabled fabrication of photonic crystal devices with complex crystal structures that would be challenging to construct using other fabrication methods. In this paper, we construct and characterize a photonic crystal consisting of two 4 x 8 x 8 cubic lattices composed of spherical silicon nitride elements straddling a layer of 8 plasma discharge tubes, creating a 3D hybrid plasma photonic crystal device. Integrating under-dense gaseous plasma elements provides a unique coupling dynamic between the dielectric spheres and the cylindrical plasma discharges, creating a monolithic hybrid photonic crystal with solid state and reconfigurable elements. The device has resonant modes that have attenuation peaks that are either switchable, tunable in amplitude, or tunable in frequency with variations in plasma density. The response of these bands seen with varying plasma density is confirmed through simulations when effects due to the heating of the photonic crystal from the gaseous plasma elements are accounted for in the experiments. We discuss how this reconfigurable device may be used and expanded upon for applications in photonic artificial neural networks and optical computing systems.

3D printing↗
DOE OSTI2023

A novel approach to interface high-Q Fabry–Pérot resonators with photonic circuits

The unique benefits of Fabry–Pérot resonators as frequency-stable reference cavities and as an efficient interface between atoms and photons make them an indispensable resource for emerging photonic technologies. To bring these performance benefits to next-generation communications, computation, and time-keeping systems, it will be necessary to develop strategies to integrate compact Fabry–Pérot resonators with photonic integrated circuits. In this paper, we demonstrate a novel reflection cancellation circuit that utilizes a numerically optimized multi-port polarization-splitting grating coupler to efficiently interface high-finesse Fabry–Pérot resonators with a silicon photonic circuit. This circuit interface produces a spatial separation of the incident and reflected waves, as required for on-chip Pound–Drever–Hall frequency locking, while also suppressing unwanted back reflections from the Fabry–Pérot resonator. Using inverse design principles, we design and fabricate a polarization-splitting grating coupler that achieves 55% coupling efficiency. This design realizes an insertion loss of 5.8 dB for the circuit interface and more than 9 dB of back reflection suppression, and we demonstrate the versatility of this system by using it to interface several reflective off-chip devices.

Optics↗
DOE OSTI2021

32 Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon

We report a heterogeneous GaAs-based quantum dot (QD) avalanche photodiode (APD) on silicon with an ultralow dark current of 10 pA at − <#comment/> 1 V , 3 dB bandwidth of 20 GHz and record gain-bandwidth product (GBP) of 585 GHz. Furthermore, open eye diagrams up to 32 Gb/s are demonstrated at 1310 nm. The k-factor has been measured for these devices to be as low as 0.14. A polarization dependence on gain and bandwidth has been observed and investigated. This shows the potential to integrate a high-speed receiver in a wavelength division multiplexing (WDM) system on a QD-based silicon photonics platform.

Tossoun, Bassem↗
NASA NTRS1990

Sounding rocket measurement of the absolute solar EUV flux utilizing a silicon photodiode

A newly developed stable and high quantum efficiency silicon photodiode was used to obtain an accurate measurement of the integrated absolute magnitude of the solar extreme UV photon flux in the spectral region between 50 and 800 A. The adjusted daily 10.7-cm solar radio flux and sunspot number were 168.4 and 121, respectively. The unattenuated absolute value of the solar EUV flux at 1 AU in the specified wavelength region was 6.81 x 10 to the 10th photons/sq cm per s. Based on a nominal probable error of 7 percent for National Institute of Standards and Technology detector efficiency measurements in the 50- to 500-A region (5 percent on longer wavelength measurements between 500 and 1216 A), and based on experimental errors associated with the present rocket instrumentation and analysis, a conservative total error estimate of about 14 percent is assigned to the absolute integral solar flux obtained.

Ogawa, H. S.↗
DOE OSTI2024

Highly efficient visible and near-IR photon pair generation with thin-film lithium niobate

Efficient on-chip entangled photon pair generation at telecom wavelengths is an integral aspect of emerging quantum optical technologies, particularly for quantum communication and computing. However, moving to shorter wavelengths enables the use of more accessible silicon detector technology, and opens up applications in imaging and spectroscopy. Here, we present high brightness ((1.6 ± 0.3) × 10 9 pairs/s/mW/nm) visible–near-IR photon pair generation in a periodically poled lithium niobate nanophotonic waveguide. The degenerate spectrum of the photon pairs is centered at 811 nm with a bandwidth of 117 nm when pumped with a spectrally multimode laser diode. The measured on-chip source efficiency of (2.3 ± 0.5) × 10 11 pairs/s/mW is on par with source efficiencies at telecom wavelengths and is also orders of magnitude higher than the efficiencies of other visible sources implemented in bulk crystal or diffused waveguide-based technologies. Further improvements in the brightness and efficiencies are possible by pumping the device with a single-frequency laser, which would also shrink the pair bandwidth. These results represent the shortest wavelength of photon pairs generated in a nanophotonic waveguide reported to date by nearly an octave.

42 ENGINEERING↗
NASA NTRS1995

Proceedings of the International Conference on Integrated Micro/Nanotechnology for Space Applications

The recent evolution of microelectronic technologies coupled with the growth of micro-electro-mechanical systems (MEMS) has had significant impact in the commercial sector. The focus of this conference was to anticipate and extend the incorporation of nano-electronics and MEMS into application specific integrated microinstruments (ASIM's) in space systems. Presentations ranged from mission application of nano-satellites to silicon micromachining for photonic applications.

Source record↗
DOE OSTI2022

Distributed deep learning training using silicon photonic switched architectures

The scaling trends of deep learning models and distributed training workloads are challenging network capacities in today’s datacenters and high-performance computing (HPC) systems. We propose a system architecture that leverages silicon photonic (SiP) switch-enabled server regrouping using bandwidth steering to tackle the challenges and accelerate distributed deep learning training. In addition, our proposed system architecture utilizes a highly integrated operating system-based SiP switch control scheme to reduce implementation complexity. To demonstrate the feasibility of our proposal, we built an experimental testbed with a SiP switch-enabled reconfigurable fat tree topology and evaluated the network performance of distributed ring all-reduce and parameter server workloads. The experimental results show up to 3.6× improvements over the static non-reconfigurable fat tree. Our large-scale simulation results show that server regrouping can deliver up to 2.3× flow throughput improvement for a 2× tapered fat tree and a further 11% improvement when higher-layer bandwidth steering is employed. The collective results show the potential of integrating SiP switches into datacenters and HPC systems to accelerate distributed deep learning training.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗