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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Electronic applications are described that would benefit from the availability of high temperature semiconductor devices. Potential materials for these devices are compared and the problems of each are discussed. Recent progress in developing silicon carbide as a high temperature semiconductor is described.
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A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.
To dramatically reduce the cost and risk of CO2 management systems in future extended missions, we have conducted preliminary studies on the materials and device development for advanced "artificial photosynthesis" reaction systems termed the High Tortuosity PhotoElectroChemical (HTPEC) system. Our Phase I studies have demonstrated that HTPEC operates in much the same way a tree would function, namely directly contacting the cabin air with a photocatalyst in the presence of light and water (as humidity) to immediately conduct the process of CO2 reduction to O2 and useful, "tunable" carbon products. This eliminates many of the inefficiencies associated with current ISS CO2 management systems. We have laid the solid foundation for Phase II work to employ novel and efficient reactor geometries, lighting approaches, 3D manufacturing methods and in-house grown novel catalytic materials.The primary objective of the proposed work is to demonstrate the scientific and engineering foundation for light-activated, compact devices capable of converting CO2 to O2 and mission-relevant carbon compounds. The proposed HTPEC CO2 management system will demonstrate a novel pathway with high efficiency and reliability in a compact, lightweight reactor architecture. The proposed HTPEC air processing concept can be developed in multiple architectures, such as centralized processing as well as "artificial leaves" distributed throughout the cabin that utilize pre-existing cabin ventilation (wind). Additionally, HTPEC can be deployed with spectrally tunable collection channels for selectable product generation. HTPEC employs light as its only energy source to remove and convert waste CO2 using a non-toxic composite catalyst.We have demonstrated in the Phase I studies the production, tunability and robustness of the novel composite catalysts following the preliminary work in the Chen laboratory. Additionally, we have designed, fabricated and tested all components of HTPEC device with active materials, including flow modeling to optimize flow mixing and pressure drop as well as the production of ethylene and other larger hydrocarbons. To best determine how this technology could be implemented, we also performed system integration optimization and trade studies. This includes parameters such as mass, volume, power in relation to selected mission configurations, CO2 delivery methods and light source/delivery approaches.
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Automatic device built around a goniometer examines characteristics of polycrystalline materials and determines preferred orientations of crystallites. It is automatically rotatable in each of two planes and has circuit regulated sequential rotation. A fixed X ray source in conjunction with a detector examines the material.
Highly perfect single crystals of nonlinear optical organic materials are required for use in optical devices. An overview of the bulk crystal growth of these materials by melt, vapor, and solution processes is presented. Additionally, methods that may be used to purify starting materials, detect impurities at low levels, screen materials for crystal growth, and process grown crystals are discussed.
Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Topics investigated include: measurements of transistor delay time; application of the infrared response technique to the study of radiation-damaged, lithium-drifted silicon detectors; and identification of a condition that minimizes wire flexure and reduces the failure rate of wire bonds in transistors and integrated circuits under slow thermal cycling conditions. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes.
Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.
Methods of measurement for semiconductor material, process control, and devices
Methods of measurement for semiconductor materials process control, and devices
The spot heating of samples, suspended in an acoustic field, was investigated to determine if the technique could be used to process materials. A single axis resonance device operating in air at 25 C with an rms pressure maximum of 160 to 170 db was used in the experiments. The heat flow from a hot object suspended in a levitation node is dominated by the effects of the field, with the heat loss approximately 20 times larger than that due to natural convection. The acoustic forces which suspend the body at a node also serve to eject the heated air. The coupling between the locally heated region around the body and the acoustic field results in instabilities in both the pressure wave and force field. The investigations indicated the extreme difficulties in developing a materials processing device based on acoustic/spot heating for use in a terrestrial environment.
Tuning and photovoltaic methods and identification of test conditions for measurement of semiconductor materials, process control, and devices
NBS activities in developing methods of measurement for semiconductor materials, process control, and devices
This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include design of a plan to provide standard silicon wafers for four-probe resistivity measurements for the industry, publication of a summary report on the photoconductive decay method for measuring carrier lifetime, publication of a comprehensive review of the field of wire bond fabrication and testing, and successful completion of organizational activity leading to the establishment of a new group on quality and hardness assurance in ASTM Committee F-1 on Electronics. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers in silicon; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.
Alpha and gamma radiation detectors and measuring instruments for semiconductor materials, process control, and devices
A material called Thermkeep, developed as a low-cost method for the storage of thermal energy for solar electric power generating systems is discussed. The storage device consists of an insulated cylinder containing Thermkeep in which coiled tubular heat exchangers are immersed. A one-tenth scale model of the design contains 25 heat-exchanger tubes and 1500 kg of Thermkeep. Its instrumentation includes thermocouples to measure internal Thermkeep temperatures, vessel surface, heated shroud surface, and pressure gauges to indicate heat-exchanger pressure drops. The test-circuit design is presented and experimental results are discussed.
Research activity related to the science of materials is described. The following areas are included: elastic and thermal properties of composite materials, acoustic waves and devices, amorphous materials, crystal structure, synthesis of metal-metal bonds, interactions of solids with solutions, electrochemistry, fatigue damage, superconductivity and molecular physics and phase transition kinetics.