Electrode materials for charge coupled devices
The use of polycrystalline silicon in charged coupled semiconductor devices is discussed. In particular, the electrical and optical properties of the material are characterized.
Gajda, W. T. J.↗
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Fabrication of polycrystalline solar cells on low-cost substrates
A new method of producing p-n junction semiconductors for solar cells was described; the principal objective of this investigation is to reduce production costs significantly by depositing polycrystalline silicon on a relatively cheap substrate such as metallurgical-grade silicon, graphite, or steel. The silicon layer contains appropriate dopants, and the substrates are coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures of these compounds.
Chu, T. L.↗
Capacitively-Heated Fluidized Bed
Fluidized-bed chamber in which particles in bed are capacitively heated produces high yields of polycrystalline silicon for semiconductor devices. Deposition of unrecoverable silicon on chamber wall is reduced, and amount of recoverable silicon depositing on seed particles in bed is increased. Particles also have a size and density suitable for direct handling without consolidation, unlike silicon dust produced in heated-wall chambers.
Mchale, E. J.↗
Development of a polysilicon process based on chemical vapor deposition, phase 1
The development of a dichlorosilane-based reductive chemical vapor deposition process for the production of polycrystalline silicon is discussed. Experimental data indicate that the ease of ignition and explosion severity of dichlorosilane (DCS)/air mixtures is substantially attenuated if the DCS is diluted with hydrogen. Redesign of the process development unit to accommodate safety related information is described. Several different sources of trichlorosilane were used to generate a mixture of redistributed chlorosilanes via Dowex ion exchange resin. The unseparated mixtures were then fed to an experimental reactor in which silicon was deposited and the deposited silicon analyzed for electrically active impurities. At least one trichlorosilane source provided material of requisite purity. Silicon grown in the experimental reactor was converted to single crystal material and solar cells fabricated and tested.
Mccormick, J.↗
Development of a polysilicon process based on chemical vapor deposition (phase 1)
A dichlorosilane-based reductive chemical vapor deposition (CVD) process demonstrated is capable of producing, at low cost, high quality polycrystalline silicon. Testing of decomposition reactor heat shields to insure that the shield provides adequate personnel protection assuming a worst case explosion was completed. Minor modifications to a production reactor heat shield provided adequate heat shield integrity. Construction of the redesigned PDU (Process Development Unit) to accommodate all safety related information proceeded on schedule. Structural steel work was completed as is the piping and instrumentation design work. Major pieces of process equipment were received and positioned in the support structure and all transfer piping and conduits to the PDU were installed. Construction was completed on a feed system for supplying DCS to an intermediate sized reactor. The feed system was successfully interfaced with a reactor equipped with a modified heat shield. Reactor checkout was completed.
Mccormick, J.↗
Development of a polysilicon process based on chemical vapor deposition, phase 1
The goal of this program is to demonstrate that a dichlorosilane-based reductive chemical vapor deposition (CVD) process is capable of producing, at low cost, high quality polycrystalline silicon. Physical form and purity of this material will be consistent with LSA material requirements for use in the manufacture of high efficiency solar cells. Four polysilicon deposition runs were completed in an intermediate size reactor using dichlorosilane fed from 250 pound cylinders. Results from the intermediate size reactor are consistent with those obtained earlier with a small experimental reactor. Modifications of two intermediate size reactors were completed to interface with the dichlorosilane process demonstration unit (PDU).
Plahutnik, F.↗
Development of a polysilicon process based on chemical vapor deposition, phase 1 and phase 2
High-purity polycrystalline silicon was produced in an experimental, intermediate and advanced CVD reactor. Data from the intermediate and advanced reactors confirmed earlier results obtained in the experimental reactor. Solar cells were fabricated by Westinghouse Electric and Applied Solar Research Corporation which met or exceeded baseline cell efficiencies. Feedstocks containing trichlorosilane or silicon tetrachloride are not viable as etch promoters to reduce silicon deposition on bell jars. Neither are they capable of meeting program goals for the 1000 MT/yr plant. Post-run CH1 etch was found to be a reasonably effective method of reducing silicon deposition on bell jars. Using dichlorosilane as feedstock met the low-cost solar array deposition goal (2.0 gh-1-cm-1), however, conversion efficiency was approximately 10% lower than the targeted value of 40 mole percent (32 to 36% achieved), and power consumption was approximately 20 kWh/kg over target at the reactor.
Plahutnik, F.↗
A theoretical study of the effects of interacting grain boundaries on electron-beam-induced currents
The influence of several grain boundaries on the electron-beam-induced current in polycrystalline silicon is investigated. The simple geometry contemplated here, consisting of two plane parallel grain boundaries possessing different effective, albeit constant, surface recombination velocities, intersecting a planar junction at right angles allows for an exact solution of the corresponding boundary value problem. It is shown that if the distance between the grain boundaries w becomes less than the diffusion length for minority carriers L within the grain, the grain boundary with the smaller effective recombination velocity becomes less and less visible the smaller the ratio w/L.
Luke, K. L.↗
Experimental study of the minority-carrier transport at the polysilicon-monosilicon interface
This paper presents the results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contacts. Polysilicon contacts were deposited and heat treated at different conditions. The electrical properties were measured using p-n junction test structures that are much more sensitive to the contact properties than are bipolar transistors. A simple phenomenological model was used to correlate the structural properties with electrical measurements. Possible transport mechanisms are examined and estimates are made about upper bounds on transport parameters in the principal regions of the devices. The main conclusion of this study is that the minority-carrier transport in the polycrystalline silicon is dominated by a highly disordered layer at the polysilicon-monosilicon interface characterized by very low minority-carrier mobility. The effective recombination velocity at the n(+) polysilicon-n(+) monosilicon interface was found to be a strong function of fabrication conditions. The results indicate that the recombination velocity can be much smaller than 10,000 cm/s.
Neugroschel, A.↗
Residual stresses of thin, short rectangular plates
The analysis of the residual stresses in thin, short rectangular plates is presented. The analysis is used in conjunction with a shadow moire interferometry technique by which residual stresses are obtained over a large spatial area from a strain measurement. The technique and analysis are applied to a residual stress measurement of polycrystalline silicon sheet grown by the edge-defined film growth technique.
Andonian, A. T.↗
Low-pressure, chemical vapor deposition polysilicon
The low-pressure chemical vapor deposition (LPCVD) of polycrystalline silicon was investigted. The physical system was described, as was the controlling process parameters and requirements for producing films for use as an integral portion of the solar cell contact system.
Gallagher, B. D.↗
The split-cross-bridge resistor for measuring the sheet resistance, linewidth, and line spacing of conducting layers
A new test structure was developed for evaluating the line spacing between conductors on the same layer using an electrical measurement technique. This compact structure can also be used to measure the sheet resistance, linewidth, and line pitch of the conducting layer. Using an integrated-circuit fabrication process, this structure was fabricated in diffused polycrystalline silicon and metal layers and measured optically and electrically. For the techniques used, the optical measurements were typically one-quarter micron greater than the electrical measurements. Most electrically measured line pitch values were within 2 percent of the designed value. A small difference between the measured and designed line pitch is used to validate sheet resistance, linewidth, and line spacing values.
Buehler, M. G.↗
Fluidized-Bed Silane-Decomposition Reactor
Fluidized-bed pyrolysis reactor produces high-purity polycrystalline silicon from silane or halosilane via efficient heterogeneous deposition of silicon on silicon seed particles. Formation of silicon dust via homogeneous decomposition of silane minimized, and deposition of silicon on wall of reactor effectively eliminated. Silicon used to construct solar cells and other semiconductor products.
Iya, Sridhar K.↗
A scanning defect mapping system for semiconductor characterization
We have developed an optical scanning system that generates maps of the spatial distributions of defects in single and polycrystalline silicon wafers. This instrument, called Scanning Defect Mapping System, utilizes differences in the scattering characteristics of dislocation etch pits and grain boundaries from a defect-etched sample to identify and count them. This system simultaneously operates in the dislocation mode and the grain boundary (GB) mode. In the 'dislocation mode,' the optical scattering from the etch pits is used to statistically count dislocations, while ignoring the GB's. Likewise, in the 'grain boundary mode' the system only recognizes the local scattering from the GB's to generate grain boundary distributions. The information generated by this instrument is valuable for material quality control, identifying mechanisms of defect generation and the nature of thermal stresses during the crystal growth, and the solar cell process design.
Sopori, Bushnan L.↗
Smart materials fabrication and materials for micro-electro-mechanical systems; Symposium Proceedings, San Francisco, CA, Apr. 28-30, 1992
A conference on the rapidly developing fields of `smart materials' and micro-electro-mechanical systems produced papers in the areas of fabrication and characterization of ferroelectric thin films; polycrystalline silicon; optical, chemical, and biological sensors; thin film shape memory alloys; materials characterization; and alternative materials and applications.
Jardine, A. Peter↗
The Effects of Proton Radiation on the Structure of Diamond Films
Diamond possesses many of the sought after material properties desired in present day applications and is also quite radiation resistant. These characteristics make it an ideal candidate for insertion into MicroElectroMechanical Systems (MEMS) technologies, particularly for space-based applications. Most prior radiation studies investigated single crystal, bulk diamond specimens, not polycrystalline thin films. This investigation examined the microstructural effects of irradiating polycrystalline diamond films with various proton dosages (10(exp 15) - 10(exp 17) H+/sq cm). Scanning Electron Microscopy, micro-Raman Spectroscopy, and micro-X-ray Diffraction techniques were used to examine the effects as a function of depth. Strain values were calculated. Results indicate that the diamond lattice is retained, even at maximum irradiation levels. Polycrystalline silicon was also examined for comparative purposes.
Newton, Robert Lee↗
Zone heating for fluidized bed silane pyrolysis
An improved heated fluidized bed reactor and method for the production of high purity polycrystalline silicon by silane pyrolysis wherein silicon seed particles are heated in an upper heating zone of the reactor and admixed with particles in a lower reaction zone, in which zone a silane-containing gas stream, having passed through a lower cooled gas distribution zone not conducive to silane pyrolysis, contacts the heated seed particles whereon the silane is heterogeneously reduced to silicon.
Iya, Sridhar K.↗
Reactor for fluidized bed silane decomposition
An improved heated fluidized bed reactor and method for the production of high purity polycrystalline silicon by silane pyrolysis wherein silicon seed particles are heated in an upper heating zone of the reactor and admixed with particles in a lower zone, in which zone a silane-containing gas stream, having passed through a lower cooled gas distribution zone not conducive to silane pyrolysis, contacts the heated seed particles whereon the silane is heterogeneously reduced to silicon.
Iya, Sridhar K.↗