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DOE OSTI2021

Metamaterial-Inspired Vacuum Electron Devices and Accelerators

Metamaterials (MTMs) are structured materials with subwavelength features that can be engineered to have some unique properties not found in nature, such as negative refractive index, reversed Doppler effect, and reversed Cherenkov radiation. Based on these novel MTMs, several important research groups have made great attempts to develop novel MTM-inspired vacuum electron devices (VEDs) and accelerators. Just as solid-state power devices are innovated by incessant emerging of new semiconductor materials, VEDs can also be inspired by MTMs to have very remarkable advantages, such as smaller size, higher power, higher efficiency, and/or larger gain relative to conventional VEDs, such as traveling-wave tubes, backward-wave oscillators, and klystrons. Similarly, relative to conventional accelerators, MTM-inspired accelerators have obvious advantages, such as smaller size and higher accelerating gradient. Furthermore, MTM-inspired devices have promising applications in areas such as radar, communication, electronic warfare, microwave heating, and imaging.

43 PARTICLE ACCELERATORS↗

DOE OSTI2025

Intercell Power Transformer for Power Balancing of Polyphase Wireless Power Transfer Systems

Polyphase wireless power transfer (PWPT) systems experience receiver side imbalances in misaligned conditions. This paper proposes a method for power balancing in PWPT systems, specifically addressing the challenges caused by receivers coil unequal coupling. An intercell power transformer (IPT) is introduced at the receiver side to mitigate the effects of coil mismatch. Simulations of the PWPT system incorporating IPT demonstrate its effectiveness in enhancing power distribution. For voltage-fed rectifiers (VFR), the IPT increases the conduction angle, resulting in higher output power. In current- fed rectifiers (CFR), the IPT promotes uniform power sharing among rectifiers, thereby reducing electrical stress on semiconductor devices and passive components. Simulation results indicate that, under coil misalignment, the IPT improves output power by approximately 49% for VFRs and 44% for CFRs compared to conventional PWPT systems without IPT.

Wojda, Rafal [ORNL] (ORCID:0000000286609268)↗

NASA NTRS1998

A Fresh Look at Coupled-Oscillator Spatial Power Combining

Quasi-optical oscillators were proposed a little more than ten years ago as a means of developing the power levels needed for applications at millimeter frequencies using large numbers of individual semiconductor devices each of which produces only a modest amount of power [J.W. Mink, IEEE Trans. MTT., vol. 34, p. 273, 19861. An operating system was demonstrated soon after [Z.B. Popovic et. al, Int. J. Infrared and Millimeter Waves, v. 9, p. 647, 1988] in the form of a so-called grid oscillator. This device constituted a rectangular array of oscillating devices that are mutually coupled so that they oscillator coherently. The interconnecting lines in one direction serve as radiators so that the oscillators radiate directly, and the radiated fields add. Subsequently, coupled oscillators using resonant transmission line lengths was demonstrated by Mortazawi and Itoh [IEEE Trans. MTT., vol. 38, p. 86,1990). In recent work, coupled-oscillator power combiners have received less attention, with amplifier/combiners receiving more attention. Specific weaknesses of spatial-combining oscillators have motivated this transition. Namely, the oscillators employ low-Q resonators (resulting in low signal quality) and no clear means of modulation has been identified until recently. In this presentation, we review coupled-oscillator combiners in broad terms, indicating the features that make particular systems viable. We indicate how these features can be reconciled to functional requirements for system applications. Comparisons are drawn between two approaches to obtain mutual coupling: One employs low-Q oscillator circuits at each site, with concomitantly high propensity for the oscillators to couple. The other approach employs moderate-Q oscillators at each site with the concomitant requirement to tune the oscillators so that they share a range of frequencies over which they can couple and lock. In either case, precise frequency control and modulation can be achieved through locking to an external frequency source that ensures high quality signals. A recent development in coupled-oscillator arrays provides a means for beam-steering the radiation field of coupled oscillators through de-tuning of the edge elements in the array. This detuning introduces a progressive phase shift across the oscillator array. This 0 suggests architectures that can replace the functionality of a phased array without the cost 0 incurred by phase shifters. A comprehensive theory of the phase interactions among devices in such arrays is under development [e.g., Pogorzelski, York, and Maccarini, 1998 AP-S International Symposium, Atlanta, GA. June, 19981.

Pearson, L.W.↗

DOE OSTI2023

Power Electronic Substrates for Space Restricted Application

High-power modules use substrates to house the semiconductor device and for electrical insulation. These substrates are constructed with thermally conductive dielectric material sandwiched between two metals to extract heat from semiconductor chips. Thus, the required cooling performance of a power module is linked to the substrate’s thermal performance and can vary based on the substrate technologies. In this study, four substrate technologies were evaluated for space-restricted applications: direct-bonded copper, an insulated metal substrate, a thermally annealed pyrolytic graphite–based insulated metal substrate, and direct-bonded aluminum, where the heat sink is directly attached without thermal interface materials. The finite element results suggest that the popular direct-bonded copper substrate has better thermal performance than the rest of the substrates for space-restricted applications. Furthermore, a modified direct-bonded copper is proposed to further improve thermal performance. The evaluation results show that the modified substrate can handle 30% more losses than its traditional counterpart.

Chowdhury, Shajjad↗

DOE OSTI2025

A Modified DBC Substrate Improving Thermal Performance for Confined Space Applications

High-power modules use substrates to house the semiconductor device and for electrical insulation. These substrates are constructed with thermally conductive dielectric material sandwiched between two metals to extract heat from semiconductor chips. Thus, the required cooling performance of a power module is linked to the substrate’s thermal performance and can vary based on the substrate technologies. Here, in this study, five substrate technologies were evaluated for space-restricted applications: direct-bonded copper (DBC), an insulated metal substrate (IMS), a thermally annealed pyrolytic graphite (TPG)-based IMS, DBC-based double-sided cooling, and direct-bonded aluminum (DBA) where the heat sink is directly attached without thermal interface materials (TIMs). The finite element (FE) analysis results suggest that the popular DBC substrate has thermal performance better than that of the other substrates for space-constrained applications. To further improve the thermal performance, a modified DBC substrate was proposed where a copper block was added between the semiconductor and the DBC substrate to achieve heat spreading underneath the chip. The modified DBC performance was then compared with the aforementioned substrates and the results showed significant thermal performance improvement. The results were verified with experimental results where the proposed substrate showed 20% more loss handling capability compared to an identical DBC substrate.

42 ENGINEERING↗

DOE OSTI2023

Power Electronics Thermal Management

The 2017 Electrical and Electronics Technical Team Roadmap [1] proposes aggressive research and development targets aimed at improving power electronics technology to enable the mass-market penetration of electric-drive vehicles. Achieving these aggressive targets will require a decrease in cost (year 2025 cost target: $2.70/kW) and an increase in power density (year 2025 power density target: 100 kW/L) as compared with current on-road technology. Replacing traditional silicon device-based components with more efficient and higher-temperature wide-bandgap (WBG) semiconductor device-based components will enable increased power density. However, meeting the power density target will also require innovative thermal management solutions to increase the heat fluxes dissipated and allow for compact electronics packaging. This project conducts research to develop new power electronics thermal management technologies to increase power density, enable high WBG temperature operation, and decrease cost. The performance (e.g., thermal resistance, pumping power) of the power electronics cooling technologies developed in this project are compared to the performance of current, on-road technology. One of the main challenges to achieving high power densities is associated with packaging high-temperature (up to 250 degrees C) WBG devices near lower-temperature-rated components (e.g., electrical boards and capacitors).

ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2024

Power Electronics Thermal Management

ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2024

Power Electronics Thermal Management

The 2017 Electrical and Electronics Technical Team Roadmap [11] proposes aggressive research and development targets aimed at improving power electronics technology to enable the mass-market penetration of electric-drive vehicles. Achieving these aggressive targets will require a decrease in cost (year 2025 cost target: $2.70/kW) and an increase in power density (year 2025 power density target: 100 kW/L) as compared with current on-road technology. Replacing traditional silicon device-based components with more efficient and higher-temperature wide-bandgap (WBG) semiconductor device-based components will enable increased power density. However, meeting the power density target will also require innovative thermal management solutions to increase the heat fluxes dissipated and allow for compact electronics packaging. This project evaluates, designs, and develops thermal management strategies that use dielectric fluid (single-phase heat transfer) as coolants.

ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2024

Evaluation of Converter Performance Considering Static and Dynamic Device Part-to-Part Variability

This paper presents a methodology to incorporate and analyze the impact of semiconductor device part-to-part variation on power converter performance. By integrating extensive static and dynamic device characterization data with an automated compact model generation process that reflects manufacturing variability, device models with inherent variability features are utilized in converter simulations for a comprehensive assessment of performance impacts. The traditional converter performance evaluation process typically yields fixed efficiency values, often dismissing the inherent part-to-part variability caused by the manufacturing process of semiconductor devices. To address this limitation, a large population of devices was characterized to capture variations in static parameters-such as transfer, output, and capacitance characteristics-as well as dynamic behaviors, including switching losses. This data-driven approach enables the development of individual compact models, which were then integrated into converter simulations to evaluate efficiency ranges rather than single point estimated values. The converter simulation results show that part-to-part component variation can lead to significant efficiency deviations, exceeding several percentage points in high-power conversion applications. By offering a more accurate representation of converter behavior under real-world manufacturing conditions, this methodology enables designers to anticipate performance variability, improving the robustness of power converter designs.

device characterization↗

NASA NTRS2007

SiC Multi-Chip Power Modules as Power-System Building Blocks

The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.

Lostetter, Alexander↗

DOE OSTI2026

Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor

In this work, we present the theory and modeling framework of a diamond optically gated junction field‐effect transistor (DOGFET). The device utilizes nitrogen substitutional centers in type‐1b diamond to optically modulate a p‐ boron doped diamond channel. Using sub‐gap lasers with intensities as low as 100 W/cm 2 , electrons are optically excited from substitutional nitrogen sites to the conduction band of the diamond substrate, thus enabling the optical gate to exercise control on modulating the space‐charge region at the junction and therefore the channel conductivity. We show that the device can deliver a current of 7 μA/μm, or equivalently 1750 A/cm 2 , while switching at a frequency greater than 100 kHz, in a form factor of 5 μm 2 . The breakdown voltage is found to be greater than 1850 V, with a breakdown field strength of ~13 MV/cm. Moreover, the device supports nonvolatile operation with a “memory effect” enabling single transistor state retention. The presented simulation framework provides a physically grounded insight into the limits and opportunities of optoelectronic diamond systems.

Engineering - Electronic and electrical engineerin↗

DOE OSTI2024

Electronic properties of corundum-like Ir 2 O 3 and Ir 2 O 3 -Ga 2 O 3 alloys

In the hexagonal, corundum-like structure, α-Ga 2 O 3 has a bandgap of ~5.1 eV, which, combined with its relatively small electron effective mass, high Baliga's figure of merit, and high breakdown field, makes it a promising candidate for power electronics. Ga 2 O 3 is easy to dope n-type, but impossible to dope p-type, impeding the realization of some electronic device designs. Developing a lattice-matched p-type material that forms a high-quality heterojunction with n-type Ga 2 O 3 would open new opportunities in electronics and perhaps optoelectronic devices. In this work, we studied Ir 2 O 3 as a candidate for that purpose. Using hybrid density functional theory calculations we predict the electronic band structure of α-Ir 2 O 3 and compare that to α-Ga 2 O 3 , and study the stability and electronic properties of α-(Ir x Ga 1–x ) 2 O 3 alloys. We discuss the band offset between the two materials and compare it with recently available experimental data. We find that the Ir d bands that compose the top of the valence band in α-Ir 2 O 3 are much higher in energy than O p bands in α-Ga 2 O 3 , possibly enabling effective p-type doping. Finally, our results provide an insight into using the Ir 2 O 3 or Ir 2 O 3 -Ga 2 O 3 alloys as p-type material lattice-matched to α-Ga 2 O 3 for the realization of p–n heterojunctions.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Cooling and Timing Tests of the ATLAS Fast TracKer VME Boards

The Fast TracKer (FTK) is an ATLAS trigger upgrade built for full-event, low-latency, high-rate tracking. The FTK core, made of 9U VME boards, performs the most demanding computational task. The associative memory board (AMB) serial link processor and the auxiliary card (AUX), plugged on the front and back sides of the same VME slot, constitute the processing unit (PU), which finds tracks using hits from eight layers of the inner detector. The PU works in pipeline with the second stage board (SSB), which finds 12-layer tracks by adding extra hits to the identified tracks. In the designed configuration, 16 PUs and four SSBs are installed in a VME crate. The high power consumption of the AMB, AUX, and SSB (respectively, of about 250, 70, and 160 W per board) required the development of a custom cooling system. Even though the expected power consumption for each VME crate of the FTK system is high compared with a common VME setup, the 8 FTK core crates will use ≈60 kW, which is just a fraction of the power and the space needed for a CPU farm performing the same task. We report on the integration of 32 PUs and eight SSBs inside the FTK system, on the infrastructures needed to run and cool them, and on the tests performed to verify the system processing rate and the temperature stability at a safe value.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2021

Tritium Betavoltaic Powered Sensor Platforms: Power Augmentation with Scintillating Particles

Betavoltaics (BV) are long-life power sources that typically convert beta particle radiation into electricity. Largely, the radioactive decays within the source go unharvested by the device. This work seeks to augment the power generation of BV devices by integration of scintillating particles within the radiative getter to convert beta emission which would otherwise not leave the getter into usable light for power generation. Silica-covered barium fluoride scintillating particles were integrated into a tritiated water getter. Power generation was increased from 100s of nW to µW levels with the addition of 0.2 wt. % particles into the getter. Nanowatt-scale sensor platforms were demonstrated with the µW BV devices and the maximum possible lifetime of such platforms was estimated. As this technique enables higher power density BV devices from conventional Si semiconductors (compared to wider bandgap BVs), the further implementation may lower the barrier-to-deployment of these long-life power/sensor platforms.

42 ENGINEERING↗

NASA NTRS1992

Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators

Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.

Larsson, Anders G.↗

NASA NTRS2015

CarbAl Heat Transfer Material

The increasing use of power electronics, such as high-current semiconductor devices and modules, within space vehicles is driving the need to develop specialty thermal management materials in both the packaging of these discrete devices and the packaging of modules consisting of these device arrays. Developed by Applied Nanotech, Inc. (ANI), CarbAl heat transfer material is uniquely characterized by its low density, high thermal diffusivity, and high thermal conductivity. Its coefficient of thermal expansion (CTE) is similar to most power electronic materials, making it an effective base plate substrate for state-of-the-art silicon carbide (SiC) super junction transistors. The material currently is being used to optimize hybrid vehicle inverter packaging. Adapting CarbAl-based substrates to space applications was a major focus of the SBIR project work. In Phase I, ANI completed modeling and experimentation to validate its deployment in a space environment. Key parameters related to cryogenic temperature scaling of CTE, thermal conductivity, and mechanical strength. In Phase II, the company concentrated on improving heat sinks and thermally conductive circuit boards for power electronic applications.

Fink, Richard↗

NASA NTRS2001

A Survey of Power Electronics Applications in Aerospace Technologies

The insertion of power electronics in aerospace technologies is becoming widespread. The application of semiconductor devices and electronic converters, as summarized in this paper, includes the International Space Station, satellite power system, and motor drives in 'more electric' technology applied to aircraft, starter/generators and reusable launch vehicles. Flywheels, servo systems embodying electromechanical actuation, and spacecraft on-board electric propulsion are discussed. Continued inroad by power electronics depends on resolving incompatibility of using variable frequency for 400 Hz-operated aircraft equipment. Dual-use electronic modules should reduce system development cost.

Kankam, M. David↗

NASA NTRS2003

Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

Freeman, Jon C.↗