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Emergence of Dirac Composite Fermions at the Half-Filled Landau Level of the Fractional Quantum Hall Effect.
Abstract not provided.
Old Issues in the Quantum Hall Effect in Two-Dimensional Electron Systems Revisited (invited).
Abstract not provided.
New Results of the Composite Fermions in the Fractional Quantum Hall Effect.
Abstract not provided.
Recent progress in MnBi2 n Te3 n +1 intrinsic magnetic topological insulators: crystal growth, magnetism and chemical disorder
ABSTRACT The search for magnetic topological materials has been at the forefront of condensed matter research for their potential to host exotic states such as axion insulators, magnetic Weyl semimetals, Chern insulators, etc. To date, the MnBi2nTe3n+1 family is the only group of materials showcasing van der Waals-layered structures, intrinsic magnetism and non-trivial band topology without trivial bands at the Fermi level. The interplay between magnetism and band topology in this family has led to the proposal of various topological phenomena, including the quantum anomalous Hall effect, quantum spin Hall effect and quantum magnetoelectric effect. Among these, the quantum anomalous Hall effect has been experimentally observed at record-high temperatures, highlighting the unprecedented potential of this family of materials in fundamental science and technological innovation. In this paper, we provide a comprehensive review of the research progress in this intrinsic magnetic topological insulator family, with a focus on single-crystal growth, characterization of chemical disorder, manipulation of magnetism through chemical substitution and external pressure, and important questions that remain to be conclusively answered.
Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect
In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating two-dimensional bulk, without requiring an external magnetic field. Here, we explore the potential of this effect in magnetic topological insulator thin films for metrological applications. Using a cryogenic current comparator system, we measure quantization of the Hall resistance to within one part per million and, at lower current bias, longitudinal resistivity under 10 mΩ at zero magnetic field. Increasing the current density past a critical value leads to a breakdown of the quantized, low-dissipation state, which we attribute to electron heating in bulk current flow. Here, we further investigate the prebreakdown regime by measuring transport dependence on temperature, current, and geometry, and find evidence for bulk dissipation, including thermal activation and possible variable-range hopping.
Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure
Integration of a quantum anomalous Hall insulator with a magnetically ordered material provides an additional degree of freedom through which the resulting exotic quantum states can be controlled. Here, an experimental observation is reported of the quantum anomalous Hall e?ect in a magnet-ically-doped topological insulator grown on the antiferromagnetic insulator Cr?O?. The exchange coupling between the two materials is investigated using ?eld-cooling-dependent magnetometry and polarized neutron re?ec-tometry. Both techniques reveal strong interfacial interaction between the antiferromagnetic order of the Cr?O? and the magnetic topological insulator, manifested as an exchange bias when the sample is ?eld-cooled under an out-of-plane magnetic ?eld, and an exchange spring-like magnetic depth pro?le when the system is magnetized within the ?lm plane. These results identify antiferromagnetic insulators as suitable candidates for the manipula-tion of magnetic and topological order in topological insulator ?lms.
High-temperature quantum valley Hall effect with quantized resistance and a topological switch
Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. In this work, we show wide resistance plateaus in kink states—a manifestation of the quantum valley Hall effect in Bernal bilayer graphene—quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 kelvin and is flat within a dc bias window of tens of millivolts. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.
Observation of the quantum spin Hall effect up to 100 kelvin in a monolayer crystal
A variety of monolayer crystals have been proposed to be two-dimensional topological insulators exhibiting the quantum spin Hall effect (QSHE), possibly even at high temperatures. Here we report the observation of the QSHE in monolayer tungsten ditelluride (WTe 2 ) at temperatures up to 100 kelvin. In the short-edge limit, the monolayer exhibits the hallmark transport conductance, ~ e 2 / h per edge, where e is the electron charge and h is Planck’s constant. Moreover, a magnetic field suppresses the conductance, and the observed Zeeman-type gap indicates the existence of a Kramers degenerate point and the importance of time-reversal symmetry for protection from elastic backscattering. Our results establish the QSHE at temperatures much higher than in semiconductor heterostructures and allow for exploring topological phases in atomically thin crystals.
Quantum parity Hall effect in Bernal-stacked trilayer graphene
The quantum Hall effect has recently been generalized from transport of conserved charges to include transport of other approximately conserved-state variables, including spin and valley, via spin- or valley-polarized boundary states with different chiralities. In this paper, we report a class of quantum Hall effect in Bernal- or ABA-stacked trilayer graphene (TLG), the quantum parity Hall (QPH) effect, in which boundary channels are distinguished by even or odd parity under the system’s mirror reflection symmetry. At the charge neutrality point, the longitudinal conductance σ x x is first quantized to 4 e 2 / h at a small perpendicular magnetic field B ⊥ , establishing the presence of four edge channels. As B ⊥ increases, σ x x first decreases to 2 e 2 / h , indicating spin-polarized counterpropagating edge states, and then, to approximately zero. These behaviors arise from level crossings between even- and odd-parity bulk Landau levels driven by exchange interactions with the underlying Fermi sea, which favor an ordinary insulator ground state in the strong B ⊥ limit and a spin-polarized state at intermediate fields. The transitions between spin-polarized and -unpolarized states can be tuned by varying Zeeman energy. Our findings demonstrate a topological phase that is protected by a gate-controllable symmetry and sensitive to Coulomb interactions.
Intrinsic quantum anomalous hall effect in a two-dimensional anilato-based lattice
The experimentally synthesized anilato-based lattice has been predicted to be a high-temperature intrinsic Chern insulator.
Fractional Quantum Anomalous Hall Effect
The realization of the fractional quantum anomalous Hall effect (FQAHE) in a zero-field fractional Chern insulator is a new advancement in condensed matter physics, resulting from the interplay among strong correlations, topology, and spontaneous time-reversal symmetry breaking in lattice systems. In this review, we highlight the experimental and theoretical progress toward achieving FQAHE in two material platforms: twisted bilayer MoTe 2 and rhombohedral-stacked multilayer graphene. These systems host narrow topological bands with nontrivial Chern numbers, enabling interaction-driven fractionalized states analogous to the fractional quantum Hall effect, but without external magnetic fields. We discuss how spontaneous ferromagnetism, moiré lattice reconstruction, and band topological effects underpin the emergence of FQAHE in twisted MoTe 2 . We describe experimental discoveries of zero-field fractional Chern insulators in both transport and optical experiments, as well as signatures of composite Fermi liquids and higher-energy Chern band, which may shed light on engineering nonabelian states. In rhombohedral graphene/hexagonal boron nitride moiré superlattices, we review the recent observations of fractionally quantized Hall resistance, connections between FQAHE and extended quantum anomalous Hall phases, and the coexistence of superconductivity and FQAHE. Furthermore, these discoveries not only deepen our understanding of strongly correlated topological matter but also open new frontiers for exploring nonabelian anyons, fault-tolerant quantum computation, and topological opto-spintronics free of magnetic fields.
Integrating superconducting phase and topological crystalline quantum spin Hall effect in hafnium intercalated gallium film
Motivated by the growth of superconducting atomic hexagonal Ga layers on GaN surface we have calculated the electronic properties of Hf intercalated honeycomb Ga layers using first-principles theory. In contrast to the hexagonal Ga layers where substrate is necessary for their stability, we find the above structure to be dynamically stable in its freestanding form with small formation energy. In particular, six Dirac cones composed of Hf-d{sub xy}/d{sub x2-y2} orbitals are observed in the first Brillouin zone, slightly below the Fermi energy. Spin-orbit coupling opens a large band gap of 177 meV on these Dirac cones. By calculating its mirror Chern number, we demonstrate that this band gap is topologically nontrivial and protected by mirror symmetry. Such mirror symmetry protected band gaps are rare in hexagonal lattice. A large topological crystalline quantum spin Hall conductance σ{sub SH} ∼ −4 e{sup 2}/h is also revealed. Moreover, electron-phonon coupling calculations reveal that this material is superconducting with a transition temperature T{sub c} = 2.4 K, mainly contributed by Ga out-of-plane vibrations. Our results provide a route toward manipulating quantum spin Hall and superconducting behaviors in a single material which helps to realize Majorana fermions and topological superconductors.
Conetronics in 2D metal-organic frameworks: double/half Dirac cones and quantum anomalous Hall effect
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