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At least 109 records · Page 6

RF Sputtering of Gold Contacts On Niobium

Reliable gold contacts are deposited on niobium by combination of RF sputtering and photolithography. Process results in structures having gold only where desired for electrical contact. Contacts are stable under repeated cycling from room temperature to 4.2 K and show room-temperature contact resistance as much as 40 percent below indium contacts made by thermalcompression bonding.

Barr, D. W.↗

Strength distributions of SiC ceramics after oxidation and oxidation under load

The room-temperature strength distributions of a sintered and a hot-pressed SiC were examined as-machined, after oxidation at 1370 C, and after oxidation under load at 1370 C. The strengths were observed to be dependent on both the duration of oxidation and the magnitude of the applied load. Processes resulting in both strengthening and weakening behavior were observed to occur, at times simultaneously within the same strength distribution. This dynamic situation indicates that the strength-controlling flaw populations are highly transient in nature.

Easler, T. E.↗

An inherent instability in fiber-reinforced composite laminates

Presented is a theory to predict the room-temperature shape of unsymmetric laminates. The theory is an extension of classical lamination theory and includes the effects of geometric nonlinearities. It is shown that the saddle shape predicted by the classical theory can actually be an unstable shape and a laminate will assume a cylindrical shape instead. The phenomena is coupled to the length, width, and thickness of the laminate.

Hyer, M. W.↗

New measurement of the Fano factor of mercuric iodide

It is pointed out that mercuric iodide (HgI2) shows great promise as a high-resolution X-ray detector for use in X-ray astronomy. Development of mercuric iodide for astronomical work has required investigation of the temperature dependence of the HgI2 crystal parameters such as leakage current, resolution, and mobility of the charge carriers. The first studies in connection with these investigations have led to a new value of the Fano factor of 0.19 + or - 0.03. The best value previously reported was 0.27 measured at room temperature. The new upper limit of 0.19 for the HgI2 Fano factor was determined by cooling the HgI2 crystal and preamp to -20 C. It is concluded that room-temperature energy resolution of HgI2 is not limited by charge generation statistics but rather by collection efficiency.

Ricker, G. R.↗

Effects of oxidation and oxidation under load on strength distributions of Si3N4

The room-temperature strength distributions of a sintered and a hot-pressed Si3N4 were examined in the as-machined condition, after oxidation at 1370 C and after oxidation under load at 1370 C. The strength-controlling flaw populations were highly transient in nature. Both the duration of oxidation and the magnitude of the applied load were observed to effect changes in strength. This dynamic situation is related to both strengthening and weakening processes, which at times may occur simultaneously in the same strength distribution.

Easler, T. E.↗

Effects of heating rate on density, microstructure, and strength of Si3N4-6 wt.% Y2O3 and a beta-prime sialon

The effects of the heating rate during sintering/firing on the final density, microstructure, and strength of Si3N4-6 wt% Y2O3 and beta-prime sialon, sintered for four hours at 1750 C, are examined. In Si3N4-6 wt% Y2O3 increasing the heating rate from 7 C/min to 25 C/min to 90 C/min results in a corresponding decrease in the final density from 3.01 g/cu cm to 2.92 g/cu cm to 2.76 g/cu cm. In the beta-prime sialon composition all three heating rates produce an equivalent final density of 3.13 g/cu cm. All heating rates in both compositions produce nonhomogeneous microstructures. The room-temperature strength of Si3N4-6 wt% Y2O3 increases from 372 to 510 MPa with increased density, while the corresponding strengths for the betaprime sialon at equivalent densities are 345 to 445 MPa.

Campbell, S. S.↗

J-Channel Locks Potting to Compression Panel

Panel ends supported to prevent edge failure during testing. J-Channels attached to panel ends form mechanical lock with potting compound during elevated temperature tests. Not needed during room-temperature tests.

Royster, D. M.↗

IC Fabrication Methods Improve Laser Diodes

Family of high-performance, tunable diode lasers developed for use as local oscillators in passive laser heterodyne spectrometer. Diodes fabricated using standard IC processes include photolithography, selective etching and vacuum deposition of metals and insulators. Packaging refinements improved thermal-cycling characteristics of diodes and increased room-temperature shelf life.

Miller, M.↗

The AlGaAs single-mode stability

Single-mode spectral behavior with aging in constricted double heterojunction (CDH) lasers was studied. The CDH lasers demonstrated excellent reliability ( or = 1 million years extrapolated room-temperature MTTF) and single-mode operation after 10,000 hours of 70 C aging. The deleterious effects of laser-fiber coupling on the spectra of the diodes were eliminated through the use of wedge-shaped fibers. A novel high-power large optical cavity (LOC)-type laser was developed: the terraced-heterostructure (TH)-LOC laser, which provides the highest power into a single-mode (i.e., 50 mW CW) ever reported.

Botez, D.↗

Dynamic fracture toughnesses of reaction-bonded silicon nitride

The room-temperature dynamic fracture response of reaction-bonded silicon nitride is investigated using a hybrid experimental-numerical procedure. In this procedure, experimentally determined crack velocities are utilized to drive a dynamic finite-element code or dynamic finite-difference code in its generation mode in order to extract numerically the dynamic stress intensity factor of the fracturing specimen. Results show that the dynamic fracture toughness vs crack velocity relations of the two reaction-bonded silicon nitrides do not follow the general trend in those relations of brittle polymers and steel. A definite slow crack velocity during the initial phase of dynamic crack propagation is observed in reaction-bonded silicon nitride, which results in a nonunique dynamic fracture toughness vs crack velocity relation. In addition, it is found that a propagating crack will continue to propagate under a static stress intensity factor substantially lower than K(IC).

Kobayashi, A. S.↗

Piezoelectricity and pyroelectricity in polyvinylidene fluoride - Influence of the lattice structure

Piezoelectric and pyroelectric responses of beta-phase (Phase I) polyvinylidene fluoride are predicted for a model system of polarizable point dipoles. The model incorporates the influence of the orthorhombic crystal structure by including the dependence of the internal electric field on the lattice parameters. Strong anisotropy in the piezoelectric response under uniaxial stress is predicted as a consequence of the orthorhombic lattice structure. Predictions are found to be in reasonable agreement with room-temperature experimental data.

Purvis, C. K.↗

Unsymmetrically laminated composites

Classical lamination theory predicts that the room-temperature shapes of all elevated-temperature cure, unsymmetrically laminated composites are saddles. However, experimental observation indicates that the shapes are often cylindrical. In addition, a second cylindrical can sometimes be obtained from the first by a simple snap-through action. A geometrically nonlinear extension to classical lamination theory is used to explain this behavior. Approximate solutions to the nonlinear extension are obtained by using a Rayleigh-Ritz minimization of the laminate's total potential energy. A stability analysis explains the dual cylindrical shapes.

Hyer, M. W.↗

Temperature-dependent ion mixing and diffusion during sputtering of thin films of CrSi2 on silicon

Measurements of sputtering yields and composition profiles have been carried out using backscattering spectrometry for samples of CrSi2 on Si irradiated wth 200-keV Xe ions. When the CrSi2 layer is thinner than the ion range, the sputtering yield ratio of Si to Cr increases from 3.5 for room-temperature irradiation to 65 at 290 C. For a thick sample, the corresponding increase is from 2.4 to 4.0 only. These changes are explained in terms of a rise in the Si surface concentration ot 290 C. The driving force for this process seems to be the establishment of stoichiometric CrSi2 compound. Transport of Si to the surface is by ion mixing in the thin sample and thermal diffusion through the thick layer.

Shreter, U.↗

Hypergravic fields and parallel controllers for thermoregulation

To test the proposal that mammals have parallel neurocontrollers for temperature regulation, Long-Evans hooded male rats were exposed to cold while in a 3-G field. When exposed to cold, these rats consumed 35 percent less oxygen/min at 3 G than they did when exposed to cold at 1 G. However, rats acclimated for 6 wk to 5 C consumed oxygen at the same rate during cold exposure at 3 G as at 1 G. Because cold-acclimated rats generate heat primarily by nonshivering thermogenesis while rats acclimated to room temperature rely to a greater extent on shivering, the 35 percent decrease in oxygen consumption of cold-exposed room-temperature rats in 3-G fields may reflect an inactivation of shivering. These oxygen consumption measurements, together with measurements of core and tail temperatures of rats in 3-G fields, are consistent with the proposal that neurocontrollers for thermoregulation are arranged in parallel and can be uncoupled by hypergravic fields.

Monson, C. B.↗

Refractory materials for high-temperature thermoelectric energy conversion

Theoretical work of two decades ago adequately explained the transport behavior and effectively guided the development of thermoelectric materials of high conversion efficiencies of conventional semiconductors (e.g., SiGe alloys). The more significant contributions involved the estimation of optimum doping concentrations, the reduction of thermal conductivity by solid solution doping and the development of a variety of materials with ZT approx. 1 in the temperature range 300 K to 1200 K. ZT approx. 1 is not a theoretical limitation although, experimentally, values in excess of one were not achieved. Work has continued with emphasis on higher temperature energy conversion. A number of promising materials have been discovered in which it appears that ZT 1 is realizable. These materials are divided into two classes: (1) the rare-earth chalcogenides which behave as itinerant highly-degenerate n-type semiconductors at room-temperature, and (2) the boron-rich borides, which exhibit p-type small-polaronic hopping conductivity.

Wood, C.↗

Atlas of high resolution infrared spectra of carbon dioxide

An atlas of long-path room-temperature absorption spectra of carbon dioxide is presented for the spectral intervals 1830-2100 cm, 2395-2680 cm, and 3140-3235 cm. The spectral data were recorded at high signal to noise with the 0.01 cm resolution Fourier transform interferometer. The spectra were obtained with pressures between 1 and 10 Torr of CO2 and with total paths between 24 and 384 meters. A compilation of the measured line positions and the assignments derived from the analysis are presented. Of the 3336 lines in the atlas, 94 percent were identified as CO2 lines or as residual lines H2O and CO. Calculated positions are presented for the carbon dioxide lines; a total of 52 bands of C-12O2-16, C-13O2-16, C-12O-16O-18, C-12O-16O-17, and C-13O-16O18 were identified. The weakest carbon dioxide lines marked in the atlas have intensities of approximately 0.5 x 10 to the negative 26th power cm/molecule at room temperature.

Rinsland, C. P.↗

A new thermal radiation detector using optical heterodyne detection of absorbed energy

The operating principles of a new kind of room-temperature thermal radiation detector are described. In this device modulated light heats a gas, either directly or by conduction from a thin absorbing membrane, and the resultant change in density of the gas is detected by optical heterodyning. The performance of a membrane device of this kind agrees well with the predictions of theory.

Davis, C. C.↗

Characteristics of Si3N4-SiO2-Ce2O3 compositions sintered in high-pressure nitrogen

Full-density Si3N4-SiO2-Ce2O3 compositions were prepared by sintering with 2.5 MPa nitrogen pressure at temperatures of 1900 and 2090 C. Room-temperature flexural strengths near 700 MPa for sintered material compared favorably with the strength of hot-pressed material. At 1370 C, where flexural strengths as high as 363 MPa were obtained, it was observed that the coarsest structure was the strongest and the finest structure was the weakest. One of the compositions tested, Si3N4-8.7 wt pct SiO2-8.3 wt pct-Ce2O3, was found to have excellent 200-h oxidation resistance at 700, 1000, and 1370 C, without incidence of 700 to 1000 C phase instability and cracking.

Sanders, W. A.↗