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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6

Incorporating Electrochemical Halide Oxidation into Drift-Diffusion Models to Explain Performance Losses in Perovskite Solar Cells under Prolonged Reverse Bias

Partial shading of a solar module can induce a set of cells within the module to operate under reverse bias. Studies have shown that metal halide perovskite solar cells with a wide variety of compositions and contacts exhibit interesting behavior in reverse bias that includes both reversible performance loss and non-reversible degradation. In this paper, an advanced drift-diffusion approach incorporating an electrochemical term to explain the short-circuit, open circuit and fill factor losses that are experimentally measured after prolonged reverse bias is used. It is shown that holes can tunnel into the perovskite due to sharp band bending near the contact, accumulate within the bulk of the perovskite absorber, and trigger the oxidation of halides to form neutral halogens. The density of neutral halogens is much higher in reverse bias because there are hardly any electrons available to reduce the iodine. The resulting halogens act as bulk recombination centers. While the interstitial halogen density does decay when the cell is operated in forward bias, permanent degradation can occur if the iodine diffuses out of the perovskite layer. Finally, the ways in which changing parameters such as the mobile ion density or the series resistance at the contact can influence device performance and stability are discussed.

degradation↗

Field‐Relevant Degradation Mechanisms in Metal Halide Perovskite Modules

Field testing, failure analysis, and understanding of degradation mechanisms are essential to advancing metal halide perovskite (MHP) photovoltaic (PV) technology toward commercialization. Here, we present performance data from up to 1 year of outdoor testing of MHP modules in Golden, Colorado. The module encapsulation architecture and encapsulant materials have a significant impact on module reliability, with modules containing a polyolefin elastomer (POE) in addition to a desiccated polyisobutylene (PIB) edge seal outlasting modules with only a PIB edge seal or PIB blanket. Nondestructive and destructive characterization of the field-tested modules points to module scribes and interfaces as areas of potential mechanical weakness and chemical migration, resulting in shunt pathways and increased series resistance. Finally, indoor accelerated stress testing with light and elevated temperatures is performed, demonstrating failure with similar scribe degradation signatures as compared to the field-tested modules. In conclusion, under both outdoor testing and light and elevated temperature conditions, electrochemical corrosion between the copper electrode and the mobile iodine ions appeared dominant, with a significant progression at the scribes that is speculated to result from an interplay between the initial laser damage and joule heating from enhanced ion diffusion under bias.

14 SOLAR ENERGY↗

Stability of Cu(In x Ga 1− x )Se 2 Solar Cells Utilizing RbF Postdeposition Treatment under a Sulfur Atmosphere

Alkali halide postdeposition treatments (PDTs) have become a key tool to maximize efficiency in Cu(In x Ga 1− x )Se 2 (CIGS) photovoltaics. RbF PDTs have emerged as an alternative to the more common Na‐ and K‐based techniques. This study utilizes temperature‐dependent current–voltage ( JVT ) measurements to study a unique RbF PDT performed in a S atmosphere. The samples are measured before and after 6 months in a desiccator to study device stability. Both samples contain Na and K which diffuse from the soda–lime glass substrate. A reference sample and a RbF + S PDT sample both show the development of a rear contact barrier after aging. The contact barrier is higher for the RbF + S PDT sample, leading to decreased current in forward bias. Series resistance is also higher in the RbF + S PDT device which leads to lower fill factor. However, after aging the reference sample has a larger decrease in open‐circuit voltage ( V OC ). Ideality factor measurements suggest Shockley–Read–Hall recombination dominates both samples. V OC versus temperature and a temperature‐dependent activation energy model are used to calculate diode activation energies for each sample condition. Both techniques produce similar values that indicate recombination primarily occurs within the bulk absorber.

14 SOLAR ENERGY↗

Electrochemical Degradation Modes in Bifacial Silicon Photovoltaic Modules

Motivated by the rapidly rising deployment of bifacial monocrystalline-silicon photovoltaics (PV), we investigate the durability of various PV module packaging configurations with transparent coverings on both the front and rear sides of the module. We use a series of bifacial passivated emitter and rear cell (p-PERC) mini-modules with systematically varying outer cover materials (glass/glass, G/G, or glass/transparent backsheet, G/TB) and encapsulant chemistries (poly [ethylene-co-vinyl acetate], EVA; or polyolefin, POE). We study degradation modes over 1,000 hours of combined damp heat (DH) exposure and high system voltages that can cause potential-induced degradation (PID) under positive, zero, or negative 1,000 V cell-to-frame bias. We analyze the degradation modes using a combination of current-voltage measurements, impedance spectroscopy, external quantum efficiency, and spatially resolved luminescence and thermal imaging. Our results highlight various types of degradation including shunting, enhanced recombination, and series resistance increases, and we use spatially resolved characterization to separately identify the localized effects. We show that multiple PID and moisture-ingress degradation modes severely affect EVA-containing modules, with previously reported PID processes under negative-bias DH and a unique observation of rear-side surface recombination in G/EVA/G modules under positive-bias DH. We observe significantly less degradation in POE-containing modules, where the G/POE/G configuration exhibits minimal degradation under all stress conditions that we employ.

14 SOLAR ENERGY↗

GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition

Light-emitting diode (LED) arrays fabricated on a polycrystalline metal substrate are demonstrated using a novel technique that enables the growth of epitaxial metal-organic chemical vapor deposition (MOCVD) GaN layers on non-single-crystal substrates. Epitaxial GaN is deposited directly on metal foil using an intermediate ion beam-assisted deposition (IBAD) aligned layer. For a single 170 μm-diameter LED on the metal foil, electroluminescence (EL) spectrum shows a peak wavelength of ≈452 nm and a full width at half maximum (FWHM) of ≈24 nm. The current–voltage (I –V ) characteristics show a turn-on voltage of 3.7 V, a series resistance of 10 Ω. LEDs on metal show a relative external quantum efficiency (EQE) that is roughly 3× lower than that of similar LEDs fabricated on a sapphire substrate. Finally, InGaN LEDs on large-area non-single-crystal substrates such as metal foils enable large-area manufacturing, reducing production cost, and opening the door for new applications in lighting and displays.

36 MATERIALS SCIENCE↗

Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO 2 /epi-4H-SiC MOS capacitors

We report high resolution radiation detection has been demonstrated using Ni/SiO2/n-4H-SiC metal-oxidesemiconductor vertical capacitors fabricated using highly crystalline 4H-SiC epilayers. The oxide layers have been grown thermally using two different approaches: i) in-air, and ii) oxygen-ambience oxidation. The devices fabricated using the former method exhibited dark currents one order of magnitude higher than that in the latter. The observed difference has been attributed to the back-contact series resistance and capacitance. Regardless of the difference in the device parameters, detectors prepared using both of the methods exhibited very high energy resolutions of ≤ 0.5% for 5486 keV alpha particles emitted by an 241Am radioisotope. Capacitance mode deep level transient spectroscopic (DLTS) studies revealed similar type of electrically active defects along with Z1/2 and EH5 deep level defects in both the types of devices. The DLTS scans also revealed positive polarity peaks in these devices which indicate emission from minority carrier trap centers. The activation energy corresponding to the peak was found to be ~1.2 eV which has been assigned to HK3 defects responsible for hole trapping in 4H-SiC. The possibility of appearance of the positive peak due to non-negligible impedance of the back-contact has been ruled out based on the observation that the centroid of the observed peak did not change with detectors having different device parameters.

36 MATERIALS SCIENCE↗

Efficient and scalable GaInAs thermophotovoltaic devices

We report thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste-heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm 2 ), scalable, single-junction 0.75-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8% +/- 2.0% and an electrical power density of 3.78 W/cm 2 at an emitter temperature of 1,850 °C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with an optimized cell architecture, excellent material quality, and low series resistance. Importantly, fabrication of 12 high-performing devices on a 2-in wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, illustrated by early results for a two-junction 0.84-eV GaInPAs/0.75-eV GaInAs device.

14 SOLAR ENERGY↗

Application of GO anchored mediator in a polymer electrolyte membrane for high-rate solid-state supercapacitors

Here, we synthesized a novel polymer electrolyte membrane by combining poly (vinylidene fluoride) (PVDF) and lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) with graphene oxide (GO) nanosheets and a lithium salt of tungstosilicic acid (Li 4 SiW 12 O 40 , hereafter, referred to SiWLi). The impact of the addition of GO/SiWLi on the microstructure and morphology of the membrane were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Fourier transform infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS). We found that adding the GO/SiWLi to the PVDF/LiTFSI polymer electrolyte membrane significantly reduced the pore size. Furthermore, the addition of the GO/SiWLi resulted in not only an increase of the ionic conductivity from 0.87 $\times$ 10 –2 to 3.12 $\times$ 10 –2 Scm –1 but also an increase in the lithium-ion transference number from 0.52 to 0.87. The polymer electrolyte membranes with and without GO/SiWLi were utilized to fabricate solid-state supercapacitors. The supercapacitors fabricated with the membrane containing GO/SiWLi displayed 37.2% lower equivalent series resistance and 88.2% greater specific capacitance than those fabricated using the membrane without GO/SiWLi at 200mVs –1 .

42 ENGINEERING↗

A case study of high-temperature polyetherimide film capacitor fabrication

Capacitors, as the basic building block of power electronics and electrical systems, are the major constraint of the increasingly integrated power systems that require new capable polymer dielectric films operating at higher temperatures >125 °C. Despite tremendous research efforts on the lab scale, there remains a considerable barrier and knowledge basis for converting polymeric films to functioning capacitors desired in actual applications. Here, the authors tackled the polyetherimide (PEI) film scale up issues and developed various engineering processes for film de-wrinkling, optimal metallization, static elimination, and capacitor fabrication improvement. The authors discovered various fabrication challenges such as the electrostatic charge, metallization scheme, winding tension, and end electrode disconnects. To fabricate a high yield of PEI capacitor bobbins, it is necessary to utilize static eliminators (radioactive ionizers), moderately thick aluminum metallization (15–30 Ω/sq), and winding tension (60–100 g). It is also effective to evaluate capacitance, dielectric loss, equivalent series resistance, and thermal cycling stability of capacitors. This work sheds some light on converting PEI films and other polymeric films to capacitors on a scale up fabrication effort. The practical learning from film handling to capacitor fabrication in this work provided the necessary knowledge for manufacturing high-temperature polar film capacitors.

36 MATERIALS SCIENCE↗

Optoelectronic and material properties of solution-processed Earth-abundant Cu 2 BaSn(S, Se) 4 films for solar cell applications

Copper barium thioselenostannate, Cu 2 BaSnS 4-x Se x (CBTSSe), absorbers employ low-toxicity and abundant metals while offering low-cost manufacturing options, controllable stoichiometry and band gap tunability (from 2 eV at x = 0 to 1.55 eV at x = 3). CBTSSe can therefore be considered a prospective candidate for maintaining or improving upon the advantages of already commercialized Cu(In,Ga)(S,Se) 2 (CIGSSe) and CdTe absorbers. Here, we focus on solution-deposited stoichiometric CBTSSe films with band gap of 1.59 eV (x ≈ 3) and explore the fundamental film properties. Temperature- and excitation-dependent photoluminescence studies reveal a dominant defect emission at ~1.5 eV and a second deep defect feature at 1.15 eV. From time-resolved terahertz measurements, we find a charge carrier (electron and hole sum) mobility of ~140 cm 2 /Vs—i.e., comparable to values in CIGSSe or Cu 2 ZnSnS 4-x Se x (CZTSSe)—as well as a two-component minority carrier lifetime. A longer-lived lifetime component (~2 ns) arises from bulk recombination. However, strong recombination at the (bare) surface leads to a ~50 ps lifetime, inferior to state-of-the-art CIGSSe or CZTSSe absorbers. This recombination issue may worsen for CBTSSe/CdS interfaces, due to a cliff-like band alignment with 0.6 eV band offset, as revealed by ultraviolet photoemission spectroscopy. A low number of charge carriers within the absorber further contributes to a high series resistance. Employing these films, we also report the highest performance achieved from solution-processed trigonal CBTSSe thin-film photovoltaic devices, with open circuit voltage, short-circuit current density, fill factor and efficiency of 470 mV, 14.3 mA/cm 2 , 43.6% and 2.9%, respectively. The physical measurements provided on the stoichiometric solution-processed CBTSSe absorber further point to critical areas for future improvement of CBTSSe and related photovoltaic cells in the quest for higher efficiency devices based on earth abundant metals.

14 SOLAR ENERGY↗

Selective Isolation of Surface Grain Boundaries by Oxide Dielectrics Improves Cd(Se,Te) Device Performance

Cd(Se,Te) photovoltaics (PV) are the most widely deployed thin-film solar technology globally, yet continued efficiency improvements are stymied by challenges at the device hole contacts. The inclusion of solution-processed oxide layers such as AlGaO x in the contact stack has yielded improved device open-circuit voltages (V OC ) and fill factors (FF). However, contradictory mechanisms by which these layers improve the device properties have been proposed by the research community. We demonstrate in this work that an underappreciated property of such spin-coated layers is the preferential deposition at grain boundaries, a process that isolates the grain boundaries during contact metallization. The effects of grain-boundary isolation are probed by varying the coverage of solution-processed AlGaO x “barrier” layers on the Cd(Se,Te) surface, quantified by scanning Auger microscopy. Examining coverage-dependent V OC and FF, it was observed that isolating the grain boundaries during metallization is sufficient to prevent damage to the absorber that occurs in devices lacking a barrier layer, while additional coverage contributes to the increased series resistance. Such an effect is agnostic to the material used as a barrier layer, as long as the material does not itself damage the absorber. Spin-coated SiO x was used in place of AlGaO x for an equally beneficial effect. This grain-boundary isolation phenomenon is also observed during Mo deposition and in absorbers that have been contacted with a nitrogen-doped ZnTe layer. The mechanisms by which metallization may degrade the absorber are discussed, as are contact design strategies leveraging barrier layers, which may lead to improved device efficiencies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Establishing the Role of Operating Potential and Mass Transfer in Multicarbon Product Generation for Photoelectrochemical CO 2 Reduction Cells Using a Cu Catalyst

There is increasing interest in the possibility of photoelectrochemical (PEC) reduction of CO 2 to C 2+ products; however, the criteria for maximizing PEC solar-to-C 2+ (STC 2+ ) rates are not well understood. We report here a continuum-scale model of PEC CO 2 reduction (CO 2 R) on Cu in 0.1 M CsHCO 3 and use it to optimize the design and operating conditions for generating C 2+ products. Furthermore, we demonstrate that the potential-dependent product distribution of CO 2 R on Cu requires operating near the potential that maximizes C 2+ generation rates ($V$ id ), unlike PEC water splitting, which desires operation at the maximum photocurrent density. Because of this requirement, the criterion for a high STC 2+ rate includes high-photocurrent semiconductors with photovoltages near $V$ id and low series resistance. The STC 2+ rate in these systems is enhanced by optimal CO 2 transport and exhibits low sensitivity to dirunal solar irradiance variations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration

Single-junction flat-plate terrestrial solar cells are fundamentally limited to about 30% solar-to-electricity conversion efficiency, but multiple junctions and concentrated light make much higher efficiencies practically achievable. Until now, four-junction III–V concentrator solar cells have demonstrated the highest solar conversion efficiencies. Here, we demonstrate 47.1% solar conversion efficiency using a monolithic, series-connected, six-junction inverted metamorphic structure operated under the direct spectrum at 143 Suns concentration. Furthermore, when tuned to the global spectrum, a variation of this structure achieves a 1-Sun global efficiency of 39.2%. Nearly optimal bandgaps for six junctions were fabricated using alloys of III–V semiconductors. To develop these junctions, it was necessary to minimize threading dislocations in lattice-mismatched III–V alloys, prevent phase segregation in metastable quaternary III–V alloys and understand dopant diffusion in complex structures. Further reduction of the series resistance within this structure could realistically enable efficiencies over 50%.

14 SOLAR ENERGY↗

Analysis of CdTe photovoltaic cells for ambient light energy harvesting

This paper investigates the suitability of CdTe photovoltaic cells to be used as power sources for wireless sensors located in buildings. We fabricate and test a CdTe photovoltaic cell with a transparent conducting oxide front contact that provides for high photocurrents and low series resistance at low light intensities and measures the photovoltaic response of this cell across five orders of magnitude of AM1.5G light intensity. Efficiencies of 10% and 17.1% are measured under ~1 W m -2 AM1.5G and LED irradiance respectively, the highest values for a CdTe device under ambient lighting measured to date. We use our results to assess the potential of CdTe for internet of things devices from an optoelectronic, as well as a techno-economic perspective, considering its established manufacturing know-how, potential for low-cost, proven long-term stability and issues around the use of cadmium.

14 SOLAR ENERGY↗

Dynamics of voltage-driven oscillating insulator-metal transitions

Recent experiments demonstrated emerging alternating insulator and metal phases in Mott insulators actuated by a direct bias voltage, leading to oscillating voltage outputs with characteristic frequencies. Here, we develop a physics-based nonequilibrium model to describe the dynamics of oscillating insulator-metal phase transitions and experimentally validate it using a VO 2 device as a prototype. The oscillation frequency is shown to scale monotonically with the bias voltage and series resistance and terminate abruptly at lower and upper device-dependent limits, which are dictated by the nonequilibrium carrier dynamics. Here, we derive an approximate analytical expression for the dependence of the frequency on the device operating parameters, which yields a fundamental limit to the frequency and may be utilized to provide guidance to potential applications of insulator-metal transition materials as building blocks of brain-inspired non-von Neumann computers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A Multi-Harmonic System Identification Method for Internal Circuit Element Monitoring

Many critical infrastructures depend on the reliability of electronic circuits, whose health depends on the values of internal circuit elements that degrade over time. It is therefore important to estimate the values of internal circuit elements from external measurements and monitor them for changes. The challenge to doing so is that, typically, the internal voltages and currents are not accessible for measurement. Prior work on internal circuit element monitoring uses data obtained from sensors placed inside the circuit or requires additional circuitry to be added to the given system, both of which are undesirable. We propose a new multi-harmonic frequency-domain based system identification method that is non-intrusive. It exploits the latent non-idealities already present in the system, specifically harmonics in the measured input and output signals. We show how sensitivity analysis can be used to both assess the accuracy of the method as well as to optimize the choice of harmonics to use. We use as a motivation and illustrative example the problem of determining the equivalent series resistance and capacitance in a class of dc-link capacitance circuits in Adjustable Speed Drives. We assess the performance of this method using simulations, and establish its validity by experimental results.

Deshpande, Ankit Vivek↗

Dopant Diffusion Control for Improved Tandem Cells Grown by D-HVPE

GaInP top cell current-density presently limits the performance of HVPE-grown two-junction devices, in large part due to unwanted dopant diffusion. Here, we institute mitigation strategies to lower the diffusion of dopants from both the front contact and back surface field. Successful application of these strategies resulted in a short-circuit current density of 12.1 mA/cm 2 in a GaInP/GaAs cell, an improvement of 0.9 mA/cm2 over our previous best cell. The reduced Se diffusion results in a thinner unpassivated emitter, which can lead to higher series resistance. Despite the increased resistance we obtained an efficiency increase from 23.7% to 24.8%.

42 ENGINEERING↗