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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Evaluation of crystal oscillators and frequency dividers for high temperature operation

Active and passive components of crystal oscillators and frequency dividers were tested to determine their performance at temperatures from 300 C to 350 C. The properties of GaAs JFETs were determined and their performance compared with that of silicon devices. Techniques for constructing breadboard circuits were assessed for operation in this temperature range. A Pierce oscillator and a multivibrator (Colorado crystal) oscillator were constructed and tested. Device failures are discussed.

Source record↗
NASA NTRS1986

Thermally-Activated Metal-to-Glass Bonding

Hermetic seals formed easily by use of metallo-organic film. Metallo-organic film thermally bonded to glass and soldered or welded to form hermetic seal. Film applied as ink consisting of silver neodecanoate in xylene. Relative amounts of ingredients selected to obtain desired viscosity. Material applied by printing or even by scribing with pen. Sealing technique useful in making solar-cell modules, microelectronic packages, and other hermetic silicon devices.

Gallagher, B. D.↗
NASA NTRS1986

Photocurrent Imaging Detects Solar-Module Defects

Raster-scanned laser beam excites photocurrents in thin-film amorphous silicon devices. Solar-cell laser scanner uses two galvanometer-driven mirrors to scan laser-beam spot over surface of module or cell under test. Position signals from scan controllers used to index storage of photocurrent signal data in scan-converter image memory. Stored image displayed on television monitor.

Kim, Q.↗
NASA NTRS1985

Amorphous-silicon cell reliability testing

The work on reliability testing of solar cells is discussed. Results are given on initial temperature and humidity tests of amorphous silicon devices. Calibration and measurement procedures for amorphous and crystalline cells are given. Temperature stress levels are diagrammed.

Lathrop, J. W.↗
NASA NTRS1986

Integrated infrared array technology

An overview of integrated infrared (IR) array technology is presented. Although the array pixel formats are smaller, and the readout noise of IR arrays is larger, than the corresponding values achieved with optical charge-coupled-device silicon technology, substantial progress is being made in IR technology. Both existing IR arrays and those being developed are described. Examples of astronomical images are given which illustrate the potential of integrated IR arrays for scientific investigations.

Goebel, J. H.↗
NASA NTRS1987

Determination of lifetime and surface recombination velocity of p-n junction solar cells and diodes by observing transients

The unified view of transient methods for the determination of recombination lifetime tau and back surface recombination velocity S presented here for silicon solar cells and diodes attempts to define limitations of existing methods and to evolve improvements. The presence of sizable junction capacitance for silicon devices under forward voltage invalidates the use of conventional open-circuit voltage decay (OCVD) and reverse recovery. This led Green (1983) to his method of compensated open-circuit voltage decay, in which the addition of an external resistor shunting the solar cell partially corrects for the presence of the junction capacitance. Setting this resistance to zero produces an electrical short-circuit current-decay method, which has the advantage of enabling determination of both tau and S. In an alternate approach, one may insert the functional dependence of the junction capacitance on forward voltage. This new method, denoted by the acronym OCVDCAP, enables the determination of tau with apparently greater accuracy than that obtained by previous methods utilizing voltage transients. But OCVDCAP has in common with the previous methods that it determines tau only and has practical utility only for determining tau of long-base devices. This means that it is useful only for thick base regions. In principle, however, it has an advantage over short-circuit current decay: it requires only pressure contacts, not ohmic contacts, and therefore may be used to determine tau after key processing steps in manufacturing.

Lindholm, Fredrik A.↗
NASA NTRS1986

Test of IR arrays on the Kuiper Airborne Observatory

NASA's Kuiper Airborne Observatory, which is a C-141 transport aircraft equipped with a 90-cm, all-reflective altazimuth telescope, has been engaged in the Kuiper Infrared Technology Experiment. Attention is presently given to the Experiment's flight series for state-of-the-art two-dimensional, 500-element arrays that use either blocked impurity band or bulk silicon devices. The switched FET readout scheme used on the three arrays flown thus far yields exceptionally low crosstalk. System sensitivities are found to be sufficient for the detection of both pointlike and extended sources; several of each type have been used in staring and scanning experiments.

Russell, R. W.↗
NASA NTRS1987

Integrated infrared array technology

An overview of integrated infrared (IR) array technology is presented. Although the array pixel formats are smaller, and the readout noise of IR arrays is larger than the corresponding values achieved with optical charge-coupled-device silicon technology, substantial progress is being made in IR technology. Both existing IR arrays and those being developed are described. Examples of astronomical images are given which illustrate the potential of integrated IR arrays for scientific investigations.

Goebel, J. H.↗
NASA NTRS1989

Nuclear fragmentation studies for microelectronic application

A formalism for target fragment transport is presented with application to energy loss spectra in thin silicon devices. Predicted results are compared to experiments with the surface barrier detectors of McNulty et al. The intranuclear cascade nuclear reaction model does not predict the McNulty experimental data for the highest energy events. A semiempirical nuclear cross section gives an adequate explanation of McNulty's experiments. Application of the formalism to specific electronic devices is discussed.

Ngo, Duc M.↗
NASA NTRS1989

Parallel asynchronous systems and image processing algorithms

A new hardware approach to implementation of image processing algorithms is described. The approach is based on silicon devices which would permit an independent analog processing channel to be dedicated to evey pixel. A laminar architecture consisting of a stack of planar arrays of the device would form a two-dimensional array processor with a 2-D array of inputs located directly behind a focal plane detector array. A 2-D image data stream would propagate in neuronlike asynchronous pulse coded form through the laminar processor. Such systems would integrate image acquisition and image processing. Acquisition and processing would be performed concurrently as in natural vision systems. The research is aimed at implementation of algorithms, such as the intensity dependent summation algorithm and pyramid processing structures, which are motivated by the operation of natural vision systems. Implementation of natural vision algorithms would benefit from the use of neuronlike information coding and the laminar, 2-D parallel, vision system type architecture. Besides providing a neural network framework for implementation of natural vision algorithms, a 2-D parallel approach could eliminate the serial bottleneck of conventional processing systems. Conversion to serial format would occur only after raw intensity data has been substantially processed. An interesting challenge arises from the fact that the mathematical formulation of natural vision algorithms does not specify the means of implementation, so that hardware implementation poses intriguing questions involving vision science.

Coon, D. D.↗
NASA NTRS1991

Theoretical prediction of the impact of Auger recombination on charge collection from an ion track

A recombination mechanism that significantly reduces charge collection from very dense ion tracks in silicon devices was postulated by Zoutendyk et al. The theoretical analysis presented here concludes that Auger recombination is such a mechanism and is of marginal importance for higher density tracks produced by 270-MeV krypton, but of major importance for higher density tracks. The analysis shows that recombination loss is profoundly affected by track diffusion. As the track diffuses, the density and recombination rate decrease so fast that the linear density (number of electron-hole pairs per unit length) approaches a non-zero limiting value as t yields infinity. Furthermore, the linear density is very nearly equal to this limiting value in a few picoseconds or less. When Auger recombination accompanies charge transport processes that have much longer time scales, it can be simulated by assigning a reduced linear energy transfer to the ion.

Edmonds, Larry D.↗
NASA NTRS1991

Theoretical prediction of the impact of Auger recombination on charge collection from an ion track

The theoretical analysis presented indicates that Auger recombination can reduce charge collection from very dense ion tracks in silicon devices. It is of marginal importance for tracks produced by 270-MeV krypton, and therefore it is of major importance for ions exhibiting a significantly larger loss. The analysis shows that recombination loss is profoundly affected by track diffusion. As the track diffuses, the density and recombination rate decrease so fast that the linear density (number of electron-hole pairs per unit length) approaches a nonzero limiting value as t approaches infinity. Furthermore, the linear density is very nearly equal to this limiting value in a few picoseconds or less. When Auger recombination accompanies charge transport processes that have much longer time scales, it can be simulated by assigning a reduced linear energy transfer to the ion.

Edmonds, Larry D.↗
NASA NTRS1992

Infrared readout electronics; Proceedings of the Meeting, Orlando, FL, Apr. 21, 22, 1992

The present volume on IR readout electronics discusses cryogenic readout using silicon devices, cryogenic readout using III-V and LTS devices, multiplexers for higher temperatures, and focal-plane signal processing electronics. Attention is given to the optimization of cryogenic CMOS processes for sub-10-K applications, cryogenic measurements of aerojet GaAs n-JFETs, inP-based heterostructure device technology for ultracold readout applications, and a three-terminal semiconductor-superconductor transimpedance amplifier. Topics addressed include unfulfilled needs in IR astronomy focal-plane readout electronics, IR readout integrated circuit technology for tactical missile systems, and radiation-hardened 10-bit A/D for FPA signal processing. Also discussed are the implementation of a noise reduction circuit for spaceflight IR spectrometers, a real-time processor for staring receivers, and a fiber-optic link design for INMOS transputers.

Fossum, Eric R.↗
NASA NTRS2009

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.

Patterson, Richard↗
NASA NTRS2012

Use of Functionalized Carbon Nanotubes for Covalent Attachment of Nanotubes to Silicon

The purpose of the invention is to covalently attach functionalized carbon nanotubes to silicon. This step allows for the introduction of carbon nanotubes onto all manner of silicon surfaces, and thereby introduction of carbon nano - tubes covalently into silicon-based devices, onto silicon particles, and onto silicon surfaces. Single-walled carbon nanotubes (SWNTs) dispersed as individuals in surfactant were functionalized. The nano - tube was first treated with 4-t-butylbenzenediazonium tetrafluoroborate to give increased solubility to the carbon nanotube; the second group attached to the sidewall of the nanotube has a silyl-protected terminal alkyne that is de-protected in situ. This gives a soluble carbon nanotube that has functional groups appended to the sidewall that can be attached covalently to silicon. This reaction was monitored by UV/vis/NJR to assure direct covalent functionalization.

Tour, James M.↗
NASA NTRS2014

Toward Large-Area Sub-Arcsecond X-Ray Telescopes

The future of x-ray astronomy depends upon development of x-ray telescopes with larger aperture areas (>1 sq m) and finer angular resolution(<1).Combined with the special requirements of nested grazing incidence optics, the mass and envelope constraints of spaceborne telescopes render such advances technologically challenging. Achieving this goal will require precision fabrication, alignment, mounting, and assembly of large areas (>100 sq m) of lightweight (1 kg/sq m areal density) high quality mirrors-possibly entailing active (in-space adjustable) alignment and figure correction. This paper discusses relevant programmatic and technological issues and summarizes progress toward large area sub-arcsecond x-ray telescopes. Key words: X-ray telescopes, x-ray optics, active optics, electroactive devices, silicon mirrors, differential deposition, ion implantation.

O'Dell, Stephen L.↗