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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Reconfiguration of Analog Electronics for Extreme Environments: Problem or Solution?

This paper argues in favor of adaptive reconfiguration as a technique to expand the operational envelope of analog electronics for extreme environments (EE). In addition to hardening-by-process and hardening-by-design, "hardening-by-reconfiguration", when applicable, could be used to mitigate drifts, degradation, or damage on electronic devices (chips) in EE, by using re-configurable devices and an adaptive self-reconfiguration of their circuit topology. Conventional circuit design exploits device characteristics within a certain temperature/radiation range; when that is exceeded, the circuit function degrades. On a reconfigurable device, although component parameters change in EE, as long as devices still operate, albeit degraded, a new circuit design, suitable for new parameter values, may be mapped into the reconfigurable structure to recover the initial circuit function. Partly degraded resources are still used, while completely damaged resources are bypassed. Designs suitable for various environmental conditions can be determined prior to operation or can be determined in-situ, by adaptive reconfiguration algorithms running on built-in digital controllers. Laboratory demonstrations of this technique were performed by JPL in several independent experiments in which bulk CMOS reconfigurable devices were exposed to, and degraded by, low temperatures (approx. 196 C), high temperatures (approx.300 C) or radiation (300kRad TID), and then recovered by adaptive reconfiguration using evolutionary search algorithms. Taking this technology from Technology Readiness Level (TRL) 3 to TRL 5 is the target of a current NASA project.

Field Programmable Transistor Array (FPTA)↗
NASA NTRS1989

MCTs and IGBTs - A comparison of performance in power electronic circuits

There is a continuous demand for improvements in the quality of switching power devices, such as higher switching frequency, higher withstand voltage capability, larger current-handling capability, and lower conduction losses. However, for single-conduction-mechanism devices (SCRs, GTOs, BJTs, FETs), possessing all these features is probably unrealizable for physical reasons. An attractive solution appears to be double-mechanism devices, in which the features of both a minority carrier device (BJT or SCR) and a majority carrier device (MOSFET) are embedded. Both IGBTs (insulated-gate bipolar transistors) and MCTs (MOS-controlled thyristors) belong to this family of double-mechanism devices and promise to have a major impact on converter circuit signs. The authors deal with the major features of these two devices, pointing out those that are most critical to the design of converter topologies. In particular, the two devices have been tested both in a chopper and in two resonant link converter topologies, and the experimental results are reported.

Sul, S. K.↗
DOE OSTI2026

Dynamically reconfigurable topological routing in nonlinear photonic systems

The propagation path of topologically protected states is bound to the interface between regions with different topology, and as such, the functionality of linear photonic devices leveraging these states is fixed during fabrication. Here, we propose a mechanism for dynamic control over a driven dissipative system’s local topology, yielding reconfigurable topological interfaces and thus tunable paths for protected routing. We illustrate our approach in non-resonantly pumped polariton lattices, where the nonlinear interaction between the polaritons and the exciton reservoir due to non-resonant pumping can yield picosecond-scale changes in the propagation paths of the chiral edge states. To analytically confirm the numerically observed topological dynamics, we generalize the spectral localizer framework to non-linear non-Hermitian Chern materials and apply this framework to a continuous model of the polariton system based on a driven-dissipative Gross-Pitaevskii equation. In doing so, we show that the local changes in the polariton lattice’s topology are captured by a local Chern marker. Looking forward, we anticipate such reconfigurable topological routing will enable the realization of novel classes of topological photonic devices.

Wong, Stephan [Sandia National Laboratories (SNL-N↗
DOE OSTI2019

New classes of topological crystalline insulators having surface rotation anomaly

We discover new types of quantum anomalies in two-dimensional systems with time-reversal symmetry (T) and discrete rotation symmetry with order of n = 2, 4, and 6 (C n ). The new anomalous states have n flavors of massless Dirac fermions protected by T and C n , whereas any two-dimensional lattices having the two symmetries must have a multiple of 4, 8, and 12 Dirac cones for n = 2, 4, and 6, respectively. We show that these anomalous states are physically realized on the surface of new classes of topological crystalline insulators, normal to the rotation axis. Moreover, these topological crystalline insulators support n gapless one-dimensional helical mode on the otherwise fully gapped side surface, connecting the anomalous two-dimensional states on the top and bottom surfaces. The presence of these helical modes enables a new quantum device made from a topological crystalline insulator nanorod, a “helical nanorod,” which has a quantized longitudinal conductance of ne 2 /h.

Science & Technology - Other Topics↗
DOE OSTI2023

Advanced Manufacturing Workflows for Tokamak Internal Components

The project aim was to create a new advanced manufacturing workflow for the design and creation of an internal component in a fusion device, enabling a low-cost, rapid design and fabrication cycle. As a result, two demonstration components were manufactured, and mechanical properties for two feedstock materials were tested in the context of fusion device conditions. This work shows a technological scoping toward future manufacturing of complex components in topologies relevant to magnetic fusion devices via additive manufacturing.

42 ENGINEERING↗
DOE OSTI2020

Multi-Level Optimal Power Flow Solver in Large Distribution Networks: Preprint

Solving optimal power flow (OPF) problem for large distribution networks incurs high computational complexity. We consider a large multi-phase distribution networks of tree topology with deep penetration of active devices. We divide the network into collaborating areas featuring subtree topology and subareas featuring subsubtree topology. We design a multi-level implementation of the primal-dual gradient algorithm for solving the voltage regulation OPF problems while preserving nodal voltage information and topological information within areas and subareas. Numerical results on a 4,521-node system verifies that the proposed algorithm can significantly improve computational speed without compromising any optimality.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2020

Tunable correlated Chern insulator and ferromagnetism in a moiré superlattice

Studies of two-dimensional electron systems in a strong magnetic field revealed the quantum Hall effect, a topological state of matter featuring a finite Chern number C and chiral edge states. Haldane later theorized that Chern insulators with integer quantum Hall effects could appear in lattice models with complex hopping parameters even at zero magnetic field. The ABC-trilayer graphene/hexagonal boron nitride (ABC-TLG/hBN) moiré superlattice provides an attractive platform with which to explore Chern insulators because it features nearly flat moiré minibands with a valley-dependent, electrically tunable Chern number. In this work, we report the experimental observation of a correlated Chern insulator in an ABC-TLG/hBN moiré superlattice. We show that reversing the direction of the applied vertical electric field switches the moiré minibands of ABC-TLG/hBN between zero and finite Chern numbers, as revealed by large changes in magneto-transport behaviour. For topological hole minibands tuned to have a finite Chern number, we focus on quarter filling, corresponding to one hole per moiré unit cell. The Hall resistance is well quantized at h/2e 2 (where h is Planck’s constant and e is the charge on the electron), which implies C = 2, for a magnetic field exceeding 0.4 tesla. The correlated Chern insulator is ferromagnetic, exhibiting substantial magnetic hysteresis and a large anomalous Hall signal at zero magnetic field. Finally, our discovery of a C = 2 Chern insulator at zero magnetic field should open up opportunities for discovering correlated topological states, possibly with topological excitations, in nearly flat and topologically nontrivial moiré minibands.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Topological surface currents accessed through reversible hydrogenation of the three-dimensional bulk

Hydrogen, the smallest and most abundant element in nature, can be efficiently incorporated within a solid and drastically modify its electronic and structural state. In most semiconductors interstitial hydrogen binds to defects and is known to be amphoteric, namely it can act either as a donor (H + ) or an acceptor (H - ) of charge, nearly always counteracting the prevailing conductivity type. Here we demonstrate that hydrogenation resolves an outstanding challenge in chalcogenide classes of three-dimensional (3D) topological insulators and magnets — the control of intrinsic bulk conduction that denies access to quantum surface transport, imposing severe thickness limits on the bulk. With electrons donated by a reversible binding of H + ions to Te(Se) chalcogens, carrier densities are reduced by over 10 20 cm -3 , allowing tuning the Fermi level into the bulk bandgap to enter surface/edge current channels without altering carrier mobility or the bandstructure. The hydrogen-tuned topological nanostructures are stable at room temperature and tunable disregarding bulk size, opening a breadth of device platforms for harnessing emergent topological states.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Thermal Probes of Phonon-Coupled Kitaev Spin Liquids: From Accurate Extraction of Quantized Edge Transport to Anyon Interferometry

Recent theoretical studies inspired by experiments on the Kitaev magnet α-RuCl 3 highlight the nontrivial impact of phonons on the thermal Hall conductivity of chiral topological phases. Here, we introduce mixed mesoscopic-macroscopic devices that allow refined thermal-transport probes of non-Abelian spin liquids with Ising topological order. These devices feature a quantum-coherent region with quantized or negligible phonon conductance, flanked by macroscopic lobes that facilitate efficient thermalization between chiral Majorana edge modes and bulk phonons. We show that our devices enable (i) accurate determination of the quantized thermal Hall conductivity, (ii) identification of non-Abelian Ising anyons via the temperature dependence of the thermal conductance, and, most interestingly, (iii) single-anyon detection through heat-based anyon interferometry. Analogous results apply broadly to phonon-coupled chiral topological orders.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Superconducting microwave cavities and qubits for quantum information systems

Superconducting microwave cavities featuring ultrahigh Q-factors, which measure the efficiency of energy storage in relation to energy loss in a system, are revolutionizing quantum computing by providing long coherence times exceeding 1 ms, crucial for the development of scalable multi-qubit quantum systems with low error rates. Here, in this work, we provide an in-depth analysis of recent advances in ultrahigh Q-factor cavities, integration of Josephson junction-based qubits, and bosonic-encoded qubits in 3D cavities. We examine the sources of quantum state dephasing caused by damping and noise mechanisms in cavities and qubits, highlighting the critical challenges that need to be addressed to achieve even higher coherence times. We critically survey the latest progress made in implementing single 3D qubits using superconducting materials, normal metals, and multi-qubit and multi-state quantum systems. Our work sheds light on the promising future of this research area, including novel materials for cavities and qubits, modes with nontrivial topological properties, error correction techniques for bosonic qubits, and new light–matter interaction effects.

3D printing↗
DOE OSTI2021

Toroidal polar topology in strained ferroelectric polymer

Polar topological texture has become an emerging research field for exotic phenomena and potential applications in reconfigurable electronic devices. Here, we report toroidal topological texture self-organized in a ferroelectric polymer, poly(vinylidene fluoride-ran-trifluoroethylene) [P(VDF-TrFE)], that exhibits concentric topology with anticoupled chiral domains. The interplay among the elastic, electric, and gradient energies results in continuous rotation and toroidal assembly of the polarization perpendicular to polymer chains, whereas relaxor behavior is induced along polymer chains. Such toroidal polar topology gives rise to periodic absorption of polarized far-infrared (FIR) waves, enabling the manipulation of the terahertz wave on a mesoscopic scale. Our observations should inform design principles for flexible ferroic materials toward complex topologies and provide opportunities for multistimuli conversions in flexible electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Evolution of magnetoresistance in the magnetic topological semimetals NdS⁢b 𝑥⁢ T⁢e 2−𝑥

Magnetic topological semimetals 𝐿𝑛⁢SbTe (𝐿𝑛=lanthanide elements) provide a platform to study the interplay of structure, magnetism, topology, and electron correlations. Varying Sb and Te compositions in 𝐿⁢𝑛⁢S⁢b 𝑥 ⁢T⁢e 2−𝑥 can effectively control the electronic, magnetic, and transport properties. Here, we report the evolution of transport properties with Sb and Te contents in NdS⁢b 𝑥 ⁢T⁢e 2−𝑥 , (0<𝑥<1). Our work reveals nonmonotonic evolution in magnetoresistance with varying composition stoichiometry. Specifically, reducing Sb content 𝑥 leads to strong negative magnetoresistance up to 99.9%. Such a strong magnetoresistance, which is likely attributed to the interplay between structure, magnetism, and electronic bands, establishes this material as a promising platform for investigating topological semimetal for future device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Toward tunable quantum transport and novel magnetic states in Eu 1– x Sr x Mn 1– z Sb 2 ( z < 0.05)

Magnetic semimetals are very promising for potential applications in novel spintronic devices. Nevertheless, realizing tunable topological states with magnetism in a controllable way is challenging. Here, we report novel magnetic states and the tunability of topological semimetallic states through the control of Eu spin reorientation in Eu 1–x Sr x Mn 1–z Sb 2 . Increasing the Sr concentration in this system induces a surprising reorientation of noncollinear Eu spins to the Mn moment direction and topological semimetallic behavior. The Eu spin reorientations to distinct collinear antiferromagnetic orders are also driven by the temperature/magnetic field and are coupled to the transport properties of the relativistic fermions generated by the 2D Sb layers. These results suggest that nonmagnetic element doping at the rare earth element site may be an effective strategy for generating topological electronic states and new magnetic states in layered compounds involving spatially separated rare earth and transition metal layers.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Multifunctional two-dimensional van der Waals Janus magnet Cr-based dichalcogenide halides

Two-dimensional van der Waals Janus materials and their heterostructures offer fertile platforms for designing fascinating functionalities. Here, by means of systematic first-principles studies on van der Waals Janus monolayer Cr-based dichalcogenide halides CrYX (Y = S, Se, Te; X = Cl, Br, I), we find that CrSX (X = Cl, Br, I) are the very desirable high T C ferromagnetic semiconductors with an out-of-plane magnetization. Excitingly, by the benefit of the large magnetic moments on ligand S 2- anions, the sought-after large-gap quantum anomalous Hall effect and sizable valley splitting can be achieved through the magnetic proximity effect in van der Waals heterostructures CrSBr/Bi 2 Se 3 /CrSBr and MoTe 2 /CrSBr, respectively. Additionally, we show that large Dzyaloshinskii–Moriya interactions give rise to skyrmion states in CrTeX (X = Cl, Br, I) under external magnetic fields. Our work reveals that two-dimensional Janus magnet Cr-based dichalcogenide halides have appealing multifunctionalities in the applications of topological electronic and valleytronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Topology-dependent stability of vortex-antivortex structures

The non-trivial topology of magnetic structures such as vortices and skyrmions is considered as a key concept to explain the stability of those structures. The stability, dictated by non-trivial topology, provides great potential for device applications. Although it is a very critical scientific and technological issue, it is elusive to experimentally study the topology-dependent stability owing to the difficulties in establishing stably formed magnetic structures with different topologies. Here, we establish a platform for vortex-antivortex structures with different topological charges within Ni 80 Fe 20 rectangular elements thick enough to stabilize a unique three-dimensional magnetic structure with non-uniform magnetization along the thickness of the elements. The detailed magnetization configurations of the three-dimensional vortex-antivortex structures and their annihilations during their field-driven motions are investigated by utilizing magnetic transmission soft x-ray microscopy and micromagnetic simulation. We demonstrate that the stability of vortex-antivortex structures significantly depends on their topologies and the topology-dependent stability is associated with their different annihilation mechanisms. Furthermore, we believe that this work provides in-depth insight into the stability of magnetic structures and its topology dependence.

36 MATERIALS SCIENCE↗
NASA NTRS1978

C-MOS array design techniques

The entire complement of standard cells and components, except for the set-reset flip-flop, was completed. Two levels of checking were performed on each device. Logic cells and topological layout are described. All the related computer programs were coded and one level of debugging was completed. The logic for the test chip was modified and updated. This test chip served as the first test vehicle to exercise the standard cell complementary MOS(C-MOS) automatic artwork generation capability.

Feller, A.↗
DOE OSTI2024

High-temperature quantum valley Hall effect with quantized resistance and a topological switch

Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. In this work, we show wide resistance plateaus in kink states—a manifestation of the quantum valley Hall effect in Bernal bilayer graphene—quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 kelvin and is flat within a dc bias window of tens of millivolts. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.

Science & Technology - Other Topics↗