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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2016

Radiation Tolerance Studies of Long Wavelength Infrared InAs/GaSb Detectors

In this work we investigated the effect of proton irradiation on the performance of long wavelength infrared (LWIR) InAs/GaSb photodiodes (λ(sub c) = 10.2µm) based on the complementary barrier infrared detector (CBIRD) design. We found that irradiation with 68MeV protons up to the total ionizing dose TID = 200 kRad results in only small (about 15%) decrease of the Quantum Efficiency and does not increase the operational bias of the photodiodes. However, the irradiation causes a significant increase of the dark current from j(sub d) = 5x10(exp -5) A/sq cm at V(sub b) = 0.1V and T = 80K to j(sub d) = 6x10(exp -3) A/sq cm at TID = 200 kRad. This change in the dark current mechanism can be attributed to the onset of surface leakage current, generated by the trap assisted tunneling processes in the proton displacement damage areas near the device sidewalls.

InAs/GaSb photodiodes↗
NASA NTRS2017

Effect of Radiation and Endurance on Pulsed Programming of Commercial NAND Flash Memory

Independent and coupled effects of radiation and endurance on commercial NAND Flash memory is studied using pulsed programming enabled by interrupting the programming command at the chip-level. The effects of total ionization dose (TID) and endurance stress increase and decrease, respectively, the number of pulses needed to program an entire page. The coupled effect of endurance stress and TID appear to exhibit linear correlation. A neutral electron/ hole trap model is evaluated and correlates well with our results.

Narasimham, Avyaya Jayanthi↗
NASA NTRS2017

High Density Packaging Technologies for RF Electronics in Small Spacecraft

This paper will describe a few high density packaging technologies which we are currently exploring for use in current and future small spacecraft applications. The three categories of technologies include organic multichip modules (MCMs), ceramic leadless surface mount technology (SMT) and 3D printed waveguide structures. There are many other packaging technologies that currently exist but these three were selected in part due to their long heritage in various commercial, military and space applications along with each having a relatively clear path to flight. For each of these technologies, detailed examples will be included in which hardware has been fabricated and tested for use in RF electronics for spacecraft transponders. The organic MCM example will be described in most detail and it utilizes a packaging technology by the name of CoreEZ which is a trademark of i3 Electronics. This MCM has shrunk a portion of our electronics down to 1/8th of its previous area. The CoreEZ technology has been shown to be rad hard beyond a total ionizing dose (TID) of 300kRad and the MCM which was fabricated has gone through thermal cycling and shown to have no degradation in performance. The ceramic leadless package examples include packages from high reliability manufactures by the name of KCB solutions and Barry Industries. In the case of KCB solutions, we have multiple products that will be described including a hermetic ceramic carrier which houses three microwave monolithic integrated circuits (MMICs) along with small discrete components. Finally, we will discuss the results of our search for a 3D printing process that allows us to reduce the cost and volume of our waveguide filters and diplexers for low cost small satellite applications. We have fabricated a few prototypes using direct metal laser sintering (DMLS) and metal coated plastics. Each of these packaging technology discussions will have a brief overview of its current and future use.

Aquirre, Fernando↗
NASA NTRS2019

Goddard Modular SmallSat Architecture (GMSA) Hardware Presentation

In today's rapidly advancing technology roadmap for space applications there is an emphasis on completing missions faster and cheaper than previous large-scale missions at the National Aeronautics and Space Administration (NASA) such as the Magnetospheric Multiscale (MMS) mission. As part of this effort, focus has shifted from using mostly radiation-tolerant or radiation-hardened parts to more commercial-off-the-shelf (COTS) components for missions that can last at least one year in orbit. However, there are some portions of a spacecraft's avionics, such as the command and data handling (C&DH) system and the Electrical Power Systems (EPS) that need to have some level of predictable reliability that goes beyond the capabilities of currently available COTS parts. While there are a number of COTS components that can withstand a total ionizing dose (TID) of tens or hundreds of kilorads, there is still a great deal of concern about tolerance to and mitigation of single-event effects (SEE).

Fraction, James↗
NASA NTRS2019

Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology

Total ionizing dose (TID) and single-event effect (SEE) room-temperature radiation test results are presented for developmental prototype 4H-SiC junction field effect transistor (JFET) semiconductor integrated circuits (ICs) that have demonstrated prolonged operation in extremely high-temperature (500 °C) environments. The devices tested demonstrated over 7 Mrad(Si) TID tolerance and no destructive SEE susceptibility.

Lauenstein, Jean-Marie↗
NASA NTRS2020

Total Ionizing Dose Test of Silicon Switching Transistors JANTXV2N2222AUB

Semicoa's silicon switching transistors, JANTXV2N2222AUB was tested for total ionizing dose (TID) response beginning on November 4, 2019. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

Campola, M.↗
NASA NTRS2017

Total Ionizing Dose Test of Analog Devices’ AD654 Voltage to Frequency Converter

Analog Devices’ AD654 was tested for total ionizing dose (TID) response beginning on February 13, 2017. This device has the Radiation Effects and Analysis Group Identification (REAG ID) number 16-036. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

B. Freeman↗
NASA NTRS2017

A CubeSat-Payload Radiation-Reliability Assurance Case using Goal Structuring Notation

CubeSats have become an attractive platform for universities, industry, and government space missions because they are cheaper and quicker to develop than full-scale satellites. One way CubeSats keep costs low is by using commercial off-the-shelf parts (COTS) instead of space-qualified parts. Space-qualified parts are often costlier, larger, and consume more power than their commercial counterparts precluding their use within the CubeSat form-factor. Given typical power budgets, monetary budgets, and timelines for CubeSat missions, conventional radiation hardness assurance, like the use of space-qualified parts and radiation testing campaigns of COTS parts, is not practical. Instead, a system-level approach to radiation effects mitigation is needed. In this paper an assurance case for a system-level approach to mitigate radiation effects of a CubeSat science experiment is expressed using Goal Structuring Notation (GSN), a graphical argument standard. The case specifically looks at three main mitigation strategies for the radiation environment: total ionizing dose (TID) screening of parts, detection and recovery from single-event latch-ups (SEL) and single-event functional interrupts (SEFI). The graphical assurance case presented makes a qualitative argument for the radiation reliability of the CubeSat experiment using part and system-level mitigation strategies.

COTS↗
NASA NTRS2020

AD8065 Voltage Feedback Amplifier’s Total Ionizing Dose Characterization Report

The purpose of this testing was to characterize Analog Devices’ AD8065 FastFET amplifier for low-dose rate (LDR) total ionizing dose (TID) response based on the Lucy project requirements and will be used on the L’ORRI instrument being built by Johns Hopkins University Applied Physics Lab. The AD8065 is a voltage feedback amplifier with FET inputs developed with the proprietary eXtra Fast Complementary Bipolar (XFCB) process. The amplifier boasts low noise operation and very high input impedance with a wide supply voltage range.

Megan Casey↗
NASA NTRS2009

Commercial Sensor Survey Fiscal Year 2009 master compendium radiation test report

The NASA Electronic Parts and Packaging (NEPP) Program Sensor Technology Commercial Sensor Survey task is geared toward benefiting future NASA space missions with low-cost, short-duty-cycle, visible-wavelength imaging needs. Such applications could include imaging for educational outreach purposes or short surveys of spacecraft, planetary, or lunar surfaces. Under the task, inexpensive, low-power, commercial grade CMOS sensors were surveyed in fiscal year 2007 (FY07), and three sensors were selected and tested for total ionizing dose (TID) and displacement damage dose (DDD) tolerance in fiscal year 2008 (FY08). The selected sensors had to meet selection criteria chosen to support small, low-mass cameras that produce good resolution color images. The commercial CMOS sensors tested under the task in FY08 showed very promising response to typical outreach and survey camera TID and DDD levels. In fiscal year 2009 (FY09), the survey was broadened to include two additional, similar sensor products. This compendium provides results for all radiation testing performed on the Micron and OmniVision sensors that were selected for radiation tolerance testing in FY08 and FY09.

Thorbourn, Dennis O.↗
NASA NTRS2008

Guideline for ground radiation testing of microprocessors in the space radiation environment

The goal of this work is to develop a guideline that is applicable to processors that are potentially useful in space. Thus, the guideline does not consider very high performance processors that are intended for server or high-performance applications where very large amounts of power are tolerated to gain performance because it would be impractical to use such high-power devices in typical space applications. This guide is intended to support insertion of these microprocessors into spaceflight applications and to recommend ground test protocols. The first guideline principle that should be followed is a serious concurrent engineering approach for down selecting space-qualified microprocessors. This requires that the design engineer seek the support of a radiation effects expert who understands total ionizing dose (TID) and single-event effects (SEEs) issues for microprocessors as applied to the system in question.

Irom, Farokh↗
NASA NTRS2012

Radiation tests of highly scaled, high-density, commercial, nonvolatile NAND flash memories— update 2012

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Allen, Gregory R.↗
NASA NTRS2016

High Density Packaging Technologies for RF Electronics in Small Spacecraft

This paper will describe a few high density packaging technologies which we are currently exploring for use in current and future small spacecraft applications. The three categories of technologies include organic multichip modules (MCMs), ceramic leadless surface mount technology (SMT) and 3D printed waveguide structures. There are many other packaging technologies that currently exist but these three were selected in part due to their long heritage in various commercial, military and space applications along with each having a relatively clear path to flight. For each of these technologies, detailed examples will be included in which hardware has been fabricated and tested for use in RF electronics for spacecraft transponders. The organic MCM example will be described in most detail and it utilizes a packaging technology by the name of CoreEZ which is a trademark of i3 Electronics. This MCM has shrunk a portion of our electronics down to 1/8th of its previous area. The CoreEZ technology has been shown to be rad hard beyond a total ionizing dose (TID) of 300kRad and the MCM which was fabricated has gone through thermal cycling and shown to have no degradation in performance. The ceramic leadless package examples include packages from high reliability manufactures by the name of KCB solutions and Barry Industries. In the case of KCB solutions, we have multiple products that will be described including a hermetic ceramic carrier which houses three microwave monolithic integrated circuits (MMICs) along with small discrete components. Finally, we will discuss the results of our search for a 3D printing process that allows us to reduce the cost and volume of our waveguide filters and diplexers for low cost small satellite applications. We have fabricated a few prototypes using direct metal laser sintering (DMLS) and metal coated plastics. Each of these packaging technology discussions will have a brief overview of its current and future use.

Schatzel, Donald↗
NASA NTRS2017

Iris Deep-Space Transponder for SLS EM-1 CubeSat Missions

Several key design upgrades have been recently made to the Iris Deep-Space Transponder baselined to be used on secondary payload missions of the upcoming Space Launch System Exploration Mission One (SLS EM-1). The Iris Transponder is a reconfigurable software-defined radio (SDR) designed for missions requiring interoperability with NASA's Deep Space Network (DSN) on X-band frequencies (7.2 GHz uplink, 8.4 GHz downlink). The transponder provides radiometric tracking support with the DSN to provide navigational products for precise orbit determination while performing standard uplink and downlink communications in a CubeSat/SmallSat-applicable package size. The recent hardware changes include a volume reduction of 30% from previous models, with the main transponder unit weighing less than 1.0 kg, while maintaining total ionizing dose (TID) radiation tolerance of >23 krads (Si) for deep-space missions. Lab tests indicate maximum downlink rates of up to 6.25 Msps can be supported by the transponder in conventional BPSK modulation, but most SLS EM-1 CubeSat missions are link-performance limited to less than 256 kbps. A prototype unit of the flight production units has been assembled and various performance and characterization tests are underway. This talk discusses the key design aspects and specifications of the Iris Transponder and presents preliminary results from early testing of the assembled transponder.

Kobayashi, M. Michael↗
NASA NTRS2021

Linear Systems LSK389 and LSK489 Dual N-Channel JFET Amplifier Total Ionizing Dose and Single-Event Effects Test Report

The purpose of these tests was to characterize the susceptibility of the LSK389 and LSK489 Dual N-Channel JFET from Linear Systems to Single-Event Latchup due to heavy ions and to Total Ionizing Dose (TID) degradation at -65 °C and intermediate dose rate. The test was carried out to assess suitability of the amplifiers for the Ocean Color instrument (OCI) on the Plankton, Aerosol, Cloud, ocean Ecosystem (PACE) spacecraft.

Ray Ladbury↗
NASA NTRSDate not supplied

Progress Towards Prolonged Deployment of SiC JFET-R ICs Into Previously Inaccessible Hostile Environments

This invited presentation describes demonstration of semiconductor integrated circuits (ICs) and ceramic packaging that are arguably the most environmentally durable transistor electronics ever demonstrated. SiC junction field effect transistor-resistor (JFET-R) ICs with two-level interconnect have successfully operated for over 1 year in 500 °C air-ambient [1], 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber [2], and radiation exposure through 7 Mrad(Si) total ionizing dose (TID) and 86 MeV-cm2/mg heavy ion strikes [3]. Furthermore, these ICs have also demonstrated operation from -190 °C to +812 °C (over 1000 °C T-span) without significant change in signal (input /output) or power supply voltages [4]. With modest adjustments, the SiC JFET-R fabrication process is compatible with semiconductor mass-production tools and materials. As an initial step towards this end, the processing that forms the SiC JFETs and resistors (without interconnect) for the NASA Glenn “Generation 12” design prototype JFET-R ICs was conducted at GE Research. Once the COVID-delayed IC interconnect and bond pad fabrication processing on these wafers is completed at NASA Glenn, the resulting chips will be packaged and oven-tested [5]. It is expected that further technology transfer to complete commercial production will lower investment and risk barriers to useful application deployment. For NASA, an initial high-value deployment is opening the Venus surface to extended missions for robotic scientific exploration.

Silicon Carbide↗
NASA NTRS2020

In Situ Testing Methods for Mixed-Mode Harsh Environments

A review of the radiation effects investigation capabilities of the JPL Dynamitron Accelerator Facility are discussed. A process for its use in performing total ionizing dose (TID) studies are outlined. The results of radiation effects in complicated test systems where device effects may occur due to local system irradiation are also presented.

Wong, A. T.↗