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At least 109 records · Page 6

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NASA NTRS1995

InP tunnel junction for InGaAs/InP tandem solar cells

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting minimal doping cross diffusion in the narrow space-charge region (approximately 1-5 nm) of the device. The fabrication of tandem devices using InP tunnel diodes as interconnect is in progress and will be reported at the conference.

Vilela, M. F.↗

NASA NTRS1996

InP tunnel junctions for InP/InGaAs tandem solar cells

We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

Vilela, Mauro F.↗

NASA NTRSDate not supplied

Laminar Non-Premixed Flames of Gaseous Fuel Aboard the International Space Station

From late 2017 to early 2022, six independent studies with flames of gaseous fuels were conducted on the International Space Station (ISS) in the U.S. combustion research facility. An exploration of flames at the extremes of high sooting and high dilution was conducted with a coaxial coflow burner, where the fuel and oxidizer velocities were typically matched. An investigation of electric-field effects also used the same coflow burner as well as a simple gas-jet burner, with a circular electrode mesh, downstream of the burner, at voltages of either polarity up to 10 kV. A study focused on material flammability in a quiescent atmosphere emulated the burning of condensed-phased fuels using cylindrical burners with a flat perforated outlet instrumented to measure the heat flux to the burner, i.e., emulated fuel. Three studies of soot processes, flame dynamics, and low-temperature combustion used porous spherical burners, yielding a nominally one-dimensional flame structure. The objectives and selected findings of each investigation will be briefly discussed after a short review of the advantages of studying combustion in microgravity, earlier ISS research, and the experimental hardware and its operation.

flames↗

NASA NTRSDate not supplied

Laminar Non-Premixed Flames of Gaseous Fuel Aboard the International Space Station

flames↗

NASA NTRSDate not supplied

ACME: Advanced Combustion via Microgravity Experiments

From Nov. 2017 to Feb. 2022, the ACME project’s six independent investigations of laminar, non-premixed flames of gaseous fuels were conducted on the International Space Station (ISS) in the Combustion Integrated Rack (CIR). An exploration of flames at the extremes of high sooting and high dilution was conducted with a coaxial coflow burner, where the fuel and oxidizer velocities were typically matched. An investigation of electric-field effects also used the same coflow burner as well as a simple gas-jet burner, with a circular electrode mesh downstream of the burner, at voltages of either polarity up to 10 kV. A study focused on material flammability in a quiescent atmosphere emulated the burning of condensed-phased fuels using cylindrical burners with a flat perforated outlet instrumented to measure the heat flux to the burner, i.e., emulated fuel. Three studies of soot processes, flame dynamics, and low-temperature combustion used porous spherical burners yielding a nominally one-dimensional flame structure. The ACME research will be represented through images and text.

flames↗

NASA NTRS2006

Four-Quadrant Analog Multipliers Using G4-FETs

Theoretical analysis and some experiments have shown that the silicon-on-insulator (SOI) 4-gate transistors known as G4-FETs can be used as building blocks of four-quadrant analog voltage multiplier circuits. Whereas a typical prior analog voltage multiplier contains between six and 10 transistors, it is possible to construct a superior voltage multiplier using only four G4-FETs. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET). It can be regarded as a single transistor having four gates, which are parts of a structure that affords high functionality by enabling the utilization of independently biased multiple inputs. The structure of a G4-FET of the type of interest here (see Figure 1) is that of a partially-depleted SOI MOSFET with two independent body contacts, one on each side of the channel. The drain current comprises of majority charge carriers flowing from one body contact to the other that is, what would otherwise be the side body contacts of the SOI MOSFET are used here as the end contacts [the drain (D) and the source (S)] of the G4-FET. What would otherwise be the source and drain of the SOI MOSFET serve, in the G4-FET, as two junction-based extra gates (JG1 and JG2), which are used to squeeze the channel via reverse-biased junctions as in a JFET. The G4-FET also includes a polysilicon top gate (G1), which plays the same role as does the gate in an accumulation-mode MOSFET. The substrate emulates a fourth MOS gate (G2). By making proper choices of G4-FET device parameters in conjunction with bias voltages and currents, one can design a circuit in which two input gate voltages (Vin1,Vin2) control the conduction characteristics of G4-FETs such that the output voltage (Vout) closely approximates a value proportional to the product of the input voltages. Figure 2 depicts two such analog multiplier circuits. In each circuit, there is the following: The input and output voltages are differential, The multiplier core consists of four G4- FETs (M1 through M4) biased by a constant current sink (Ibias), and The G4-FETs in two pairs are loaded by two identical resistors (RL), which convert a differential output current to a differential output voltage. The difference between the two circuits stems from their input and bias configurations. In each case, provided that the input voltages remain within their design ranges as determined by considerations of bias, saturation, and cutoff, then the output voltage is nominally given by Vout = kVin1Vin2, where k is a constant gain factor that depends on the design parameters and is different for the two circuits. In experimental versions of these circuits constructed using discrete G4- FETs and resistors, multiplication of voltages in all four quadrants (that is, in all four combinations of input polarities) was demonstrated, and deviations of the output voltages from linear dependence on the input voltages were found to amount to no more than a few percent. It is anticipated that in fully integrated versions of these circuits, the deviations from linearity will be made considerably smaller through better matching of devices.

Mojarradi, Mohammad↗

NASA NTRS1989

A three solar cell system based on a self-supporting, transparent AlGaAs top solar cell

Development of a three solar cell stack can lead to practical efficiencies greater than 30 percent (1x,AM0). A theoretical efficiency limitation of 43.7 percent at AM0 and one sun is predicted by this model. Including expected losses, a practical system efficiency of 36.8 percent is anticipated. These calculations are based on a 1.93eV/1.43eV/0.89eV energy band gap combination. AlGaAs/GaAs/GaInAsP materials can be used with a six-terminal wiring configuration. The key issues for multijunction solar cells are the top and middle solar cell performance and the sub-bandgap transparency. AstroPower has developed a technique to fabricate AlGaAs solar cells on rugged, self-supporting, transparent AlGaAs substrates. Top solar cell efficiencies greater than 11 percent AM0 have been achieved. State-of-the-art GaAs or InP devices will be used for the middle solar cell. GaInAsP will be used to fabricate the bottom solar cell. This material is lattice-matched to InP and offers a wide range of bandgaps for optimization of the three solar cell stack. Liquid phase epitaxy is being used to grow the quaternary material. Initial solar cells have shown open-circuit voltages of 462 mV for a bandgap of 0.92eV. Design rules for the multijunction three solar cell stack are discussed. The progress in the development of the self-supporting AlGaAs top solar cell and the GaInAsP bottom solar cell is presented.

Negley, Gerald H.↗

NASA NTRS1992

Enhancing Soundtracks From Old Movies

Proposed system enhances soundtracks of old movies. Signal on optical soundtrack of film digitized and processed to reduce noise and improve quality; timing signals added, and signal recorded on compact disk. Digital comparator and voltage-controlled oscillator synchronizes speed of film-drive motor and compact disk motor. Frame-coded detector reads binary frame-identifying marks on film. Digital comparator generates error signal if marks on film do not match those on compact disk.

Frazer, Robert E.↗

NASA NTRS1996

Air Force NiH2 IPV storage testing

USAF Phillips Laboratory Nickel Hydrogen IPV storage test, performed at the Naval Surface Warfare Center (NSWC) at Crane Indiana, is discussed. The storage tests is just one component of the USAF Phillips Laboratory Nickel Hydrogen IPV Test Program. The plan was to store cells for a defined period and cycle matching cells to determine the effect on cycle life. The storage period was completed in April 95 and the cycling cells have achieved five years of real time LEO cycling. The two main objectives of the storage test are: to investigate various methods on NiH2 cells by using two different manufacturers and two different storage methods or conditions, and to determine the effect of storage method on cycle performance and cycle life by using matching cells cycling at 25% depth of discharge. The comparisons between individual cycle performance as well as cycle life are also reported. During the test the following variables has been considered: constant potential, cell current, open circuit voltage, and temperature. The results of the test are also discussed using charts and tables.

Smellie, Shawn↗

NASA NTRS2004

A MEMS Micro-Translation Stage with Long Linear Translation

A MEMS Micro-Translation Stage (MTS) actuator concept has been developed that is capable of traveling long distances, while maintaining low power, low voltage, and accuracy as required by many applications, including optical coupling. The Micro-Translation Stage (MTS) uses capacitive electrostatic forces in a linear motor application, with stationary stators arranged linearly on both sides of a channel, and matching rotors on a moveable shuttle. This creates a force that allows the shuttle to be pulled along the channel. It is designed to carry 100 micron-sized elements on the top surface, and can travel back and forth in the channel, either in a stepping fashion allowing many interim stops, or it can maintain constant adjustable speeds for a controlled scanning motion. The MTS travel range is limited only by the size of the fabrication wafer. Analytical modeling and simulations were performed based on the fabrication process, to assure the stresses, friction and electrostatic forces were acceptable to allow successful operation of this device. The translation forces were analyzed to be near 0.5 micron N, with a 300 micron N stop-to-stop time of 11.8 ms.

Ferguson, Cynthia K.↗

NASA NTRS1994

Universal signal conditioning amplifier

Engineers at NASA's Kennedy Space Center have designed a signal conditioning amplifier which automatically matches itself to almost any kind of transducer. The product, called Universal Signal Conditioning Amplifier (USCA), uses state-of-the-art technologies to deliver high accuracy measurements. USCA's features which can be either programmable or automated include: voltage, current, or pulsed excitation, unlimited resolution gain, digital filtering and both analog and digital output. USCA will be used at Kennedy Space Center's launch pads for environmental measurements such as vibrations, strains, temperatures and overpressures. USCA is presently being commercialized through a co-funded agreement between NASA, the State of Florida, and Loral Test and Information Systems, Inc.

Larson, William E.↗

NASA NTRS1980

A propulsion and steering control system for the Mars rover

The design of a propulsion and steering control system for the Rensselaer Polytechnic Institute prototype autonomous Mars roving vehicle is presented. The vehicle is propelled and steered by four independent electric motors. The control system must regulate the speeds of the motors so they work in unison during turns and on irregular terrain. An analysis of the motor coordination problem on irregular terrain, where each motor must supply a different torque at a different speed is presented. A procedure was developed to match the output of each motor to the varying load. A design for the control system is given. The controller uses a microprocessor which interprets speed and steering commands from an off-board computer, and produces the appropriate drive voltages for the motors.

Turner, J. M.↗

NASA NTRS1999

Microfabricated capillary electrophoresis amino acid chirality analyzer for extraterrestrial exploration

Chiral separations of fluorescein isothiocyanate-labeled amino acids have been performed on a microfabricated capillary electrophoresis chip to explore the feasibility of using such devices to analyze for extinct or extant life signs in extraterrestrial environments. The test system consists of a folded electrophoresis channel (19.0 cm long x 150 microns wide x 20 microns deep) that was photolithographically fabricated in a 10-cm-diameter glass wafer sandwich, coupled to a laser-excited confocal fluorescence detection apparatus providing subattomole sensitivity. Using a sodium dodecyl sulfate/gamma-cyclodextrin pH 10.0 carbonate electrophoresis buffer and a separation voltage of 550 V/cm at 10 degrees C, baseline resolution was observed for Val, Ala, Glu, and Asp enantiomers and Gly in only 4 min. Enantiomeric ratios were determined for amino acids extracted from the Murchison meteorite, and these values closely matched values determined by HPLC. These results demonstrate the feasibility of using microfabricated lab-on-a-chip systems to analyze extraterrestrial samples for amino acids.

NASA Discipline Life Sciences Technologies↗

NASA NTRS2014

HgCdTe e-APD Detector Arrays with Single Photon Sensitivity for Space Lidar Applications

A multi-element HgCdTe electron initiated avalanche photodiode (e-APD) array has been developed for space lidar applications. The detector array was fabricated with 4.3-μm cutoff HgCdTe which covered a spectral response from 0.4 to 4.3 μm. We have characterized a 4x4 detector array with 80 μm square elements and an integrated custom cryogenic silicon read-out integrated circuit (ROIC). The device operated at 77K inside a small closed-cycle Dewar. Measurements showed a unity gain quantum efficiency of about 90% at 1.55 μm. The bulk dark current of the HgCdTe e-APD at 77K was less than 50,000 input referred electrons/s at 12 V APD bias where the APD gain was 620 and the measured noise equivalent power (NEP) was 0.4 fW/Hz1/2. The electrical bandwidth of the ROIC was about 6 MHz, which was chosen to match the laser pulse width of our CO2 lidar. Even with the relatively low bandwidth, the high APD gain and low dark current enabled the device to detect single photon events. Because the APD was biased below the break-down voltage, the detector output was linear with the input optical signal and there was no dead-time and afterpulsing. A new series of HgCdTe e-APDs are being developed with a much wider bandwidth ROIC and higher gain HgCdTe e-APD array, which is expected to give a much better performance in linear mode photon counting applications.

HgCdTe↗

NASA NTRS1985

Dielectric properties of 'diamondlike' carbon prepared by RF plasma deposition

Metal-carbon-metal structures were fabricated using either gold or aluminum evaporated electrodes and RF plasma (methane) deposited 'diamondlike' carbon films. Alternating-current conductance and capacitance versus voltage and frequency (10 Hz to 13 MHz) data were taken to determine the dielectric properties of these films. Conductance versus frequency data fit a generalized power law, consistent with both dc and hopping conduction components. The capacitance versus frequency data are well matched to the conductance versus frequency data, as predicted by a Kramers-Kronig analysis. The dielectric loss tangent is nearly constant at 0.5 to 1.0 percent over the frequency range from 1 to 100 kHz. The dc resistivity is above 10 to the 13th ohm cm, and the dc breakdown strength is above 8 x 10 to the 6th V/cm is properly prepared samples.

Lamb, J. D.↗

NASA NTRS2014

Acoustic Beam Forming Array Using Feedback-Controlled Microphones for Tuning and Self-Matching of Frequency Response

A feedback-controlled microphone includes a microphone body and a membrane operatively connected to the body. The membrane is configured to be initially deflected by acoustic pressure such that the initial deflection is characterized by a frequency response. The microphone also includes a sensor configured to detect the frequency response of the initial deflection and generate an output voltage indicative thereof. The microphone additionally includes a compensator in electric communication with the sensor and configured to establish a regulated voltage in response to the output voltage. Furthermore, the microphone includes an actuator in electric communication with the compensator, wherein the actuator is configured to secondarily deflect the membrane in opposition to the initial deflection such that the frequency response is adjusted. An acoustic beam forming microphone array including a plurality of the above feedback-controlled microphones is also disclosed.

Radcliffe, Eliott↗

NASA NTRS1990

Control of multiple resonant power processors in a multi-source system

Analysis and test results show that phasor-regulated, Mapham-derived resonant inverters can be paralleled to provide standardizing interfaces for multiple sources on a utility-type, aerospace power distribution bus. The basic sources do not require matching in any way, and may have grossly different characteristics. Fully stable system architectures with multiple sources, parallel/redundant distribution buses, and a wide variety of loads can be easily constructed and controlled. The commands and parameters available for system control allow for tight tolerance bus voltage control, and absolute power-sharing control from the various sources over the full range of possible source and load variations. That level of control enables simplified load power processing hardware and the distribution of losses to optimally load the source thermal control system. Positive control of all system performance and allocation of losses are not required by all missions or vehicles, and overall vehicle considerations do not always require the loads on vehicle energy sources and thermal control systems to be balanced. In those cases, power system control can be simplified, and a hierarchical set of defaults can be substituted for computer-generated or supervisory input commands to allow for stable, fully autonomous system operation.

Mildice, James↗

NASA NTRS2005

Full-Circle Resolver-to-Linear-Analog Converter

A circuit generates sinusoidal excitation signals for a shaft-angle resolver and, like the arctangent circuit described in the preceding article, generates an analog voltage proportional to the shaft angle. The disadvantages of the circuit described in the preceding article arise from the fact that it must be made from precise analog subcircuits, including a functional block capable of implementing some trigonometric identities; this circuitry tends to be expensive, sensitive to noise, and susceptible to errors caused by temperature-induced drifts and imprecise matching of gains and phases. These disadvantages are overcome by the design of the present circuit. The present circuit (see figure) includes an excitation circuit, which generates signals Ksin(Omega(t)) and Kcos(Omega(t)) [where K is an amplitude, Omega denotes 2(pi)x a carrier frequency (the design value of which is 10 kHz), and t denotes time]. These signals are applied to the excitation terminals of a shaft-angle resolver, causing the resolver to put out signals C sin(Omega(t)-Theta) and C cos(Omega(t)-Theta). The cosine excitation signal and the cosine resolver output signal are processed through inverting comparator circuits, which are configured to function as inverting squarers, to obtain logic-level or square-wave signals .-LL[cos(Omega(t)] and -LL[cos(Omega(t)-Theta)], respectively. These signals are fed as inputs to a block containing digital logic circuits that effectively measure the phase difference (which equals Theta between the two logic-level signals). The output of this block is a pulse-width-modulated signal, PWM(Theta), the time-averaged value of which ranges from 0 to 5 VDC as Theta ranges from .180 to +180deg. PWM(Theta) is fed to a block of amplifying and level-shifting circuitry, which converts the input PWM waveform to an output waveform that switches between precise reference voltage levels of +10 and -10 V. This waveform is processed by a two-pole, low-pass filter, which removes the carrier-frequency component. The final output signal is a DC potential, proportional to Theta that ranges continuously from -10 V at Theta = -180deg to +10 V at Theta = +180deg..

Alhorn, Dean C.↗