The effect of refractory elements on the stability of complex carbides in Ni-base superalloys.
Refractory elements effect on complex carbides formation in Ni base superalloys at intermediate temperatures
Dreshfield, R. L.↗
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Low temperature heat capacities of superconducting molybdenum carbides.
Low temperature heat capacities for molybdenum carbides studied for similarities of thermodynamic and superconducting properties
Toth, L. E.↗
Low temperature heat capacities of superconducting niobium and tantalum carbides.
Low temperature heat capacities of superconducting niobium and tantalum carbides measured for carbon concentration and crystal structure effects
Chang, Y. A.↗
Silicon carbide diode for increased light output
Transition metals improve the overall light output and the output in particular regions of the electroluminescent of a silicon carbide semiconductor device. These metals /impurities/ introduce levels that can be pumped electrically and affect the efficiency of the recombination process involved in emission of radiation.
Griffiths, L. B.↗
Metal carbide-graphite composites Summary report no. 2, 1 Aug. 1967 - 31 Aug. 1968
Controlling mechanical properties of hot pressed metal carbide-graphite composite materials
Source record↗
Development of an experimental silicon carbide backward diode operable to 1000 deg K
Figures of merit for experimental silicon carbide backward diode operable to 1000 degrees K
Farrell, R.↗
Growth of 2H silicon carbide crystals
Optimal growths of silicon carbide polytype crystals by methyltrichlorosilane reduction
Powell, J. A.↗
Dynamic strain aging in carbide strengthened molybdenum alloys
Dynamic strain aging in carbide strengthened molybdenum alloys
Raffo, P. L.↗
Research and development program to produce a silicon carbide cold cathode /hot electron/ emitter Final report, 21 May 1968 - 28 Feb. 1969
Development of silicon carbide hot electron emitter
Oman, R. M.↗
A floating zone technique for the growth of carbide single crystals
Floating zone technique for vanadium carbide single crystal growth
Hollox, G. E.↗
Reactive deposition of cubic silicon carbide.
Cubic /beta/ silicon carbide films deposition by volatilization in presence of acetylene
Haq, K. E.↗
Copper-titanium eutectic alloy improves electrical and mechanical contact to silicon carbide
Contact preparation at low temperatures is possible with the use of a copper-titanium eutectic alloy. Contacts formed with this alloy are ohmic on p-type silicon carbide and rectifying on n-type.
Shier, J. S.↗
Low temperature specific heat of vanadium carbide
Low temperature specific heat measurements on vanadium carbide crystals
Finegold, L.↗
Production of high purity silicon carbide Patent
Producing high purity silicon carbide on carbon base by hydrogen reduction of silicon tetrachloride
Jewell, R. A.↗
Apparatus for producing high purity silicon carbide crystals Patent
Device for producing high purity silicon carbide on carbon base by hydrogen reduction of silicon tetrachloride
Jewell, R. A.↗
Crystal growth of 2H silicon carbide
Crystal growth of 2H silicon carbide showing temperature profile along susceptor as affecting factor
Powell, J. A.↗
Mass spectrometric Knudsen cell studies of vaporization of lanthanum and scandium carbides and dissociation energy of LaC2, LaC3, LaC4, ScC2, and ScC4
Mass spectroscopy of vaporization of lanthanum and scandium carbides
Kohl, F. J.↗
Vaporization of the Group 4B metal carbides
Knudsen flow mass spectrometry, thermodynamics, and chemical bonding of titanium, zirconium, hafnium, and thorium carbides during high temperature vaporization
Kohl, F. J.↗