Search NASA⌕ Search

SEARCH · Search NASA

Results for “Power electronics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,117 records · Page 62
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Assessing Dynamic Behaviors in Converter- Dominated Power Systems via RMS and EMT Simulations: A Study of Hawaii’s NELHA Microgrid

The transition from conventional power systems to converter-based microgrids has significantly advanced sustainability, clean energy integration, and operational reliability. However, this paradigm shift introduces operational challenges due to the intermittent nature of renewable energy sources and the non-linear characteristics of power electronic loads, inducing voltage fluctuations and harmonic distortions that complicate voltage and frequency regulation. Accurate dynamic modeling is hypothesized to be critical for capturing such effects, enabling reliable simulation and control strategy development. This study introduces an innovative dynamic modeling framework for a real-world converter-based microgrid, utilizing both root mean square (RMS) and electromagnetic transient (EMT) simulation methods. The microgrid was modeled in DIgSILENT PowerFactory, with simulations calibrated against high-resolution field measurements from SEL-735 power quality meters. Results show that RMS simulations effectively characterize steady-state dynamics, while EMT simulations are essential for capturing high-frequency transients and non-linear effects from photovoltaic inverters and variable frequency drives (VFDs). This complementary approach provides a comprehensive understanding of microgrid behavior, providing critical insights for improving simulation accuracy, advancing protection schemes, and improving resilience in future low-inertia power networks.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2026

Resilient high-temperature reverse osmosis desalination membranes

Conventional thin-film composite (TFC) reverse osmosis (RO) membranes experience irreversible performance loss at high temperatures, restricting their use in industries with high-temperature streams, including oil and gas, pharmaceuticals, electronics, power generation, food production, and hybrid desalination plants. However, the mechanisms driving the performance decline of TFC membranes at high temperatures remain poorly understood. Herein, we combine controlled experiments, molecular dynamics simulations, and micromechanical modeling to elucidate TFC failure mechanisms and to evaluate thermally resilient thin-film cross-linked (TFX) composite membrane. Upon exposure to elevated temperatures (>60°C), salt rejection of TFC dropped from ~99 to <90%, with irreversible structural damage in the polysulfone layer, confirmed by scanning electron microscopy. In contrast, the TFX membrane maintained ~99% salt rejection and showed no signs of physical degradation up to 80°C. Our combined analyses revealed that TFC membrane failure arises from irreversible pore expansion in the thermoplastic polysulfone support, leading to polyamide film rupture and delamination. TFX membranes resist thermal deformation, enabling ultrahigh-temperature RO desalination and water reuse.

Wu, Jishan [Rice Univ., Houston, TX (United States↗
DOE OSTI2016

Kinetic interpretation of resonance phenomena in low pressure capacitively coupled radio frequency plasmas

Low pressure capacitive radio frequency (RF) plasmas are often described by equivalent circuit models based on fluid approaches that predict the self-excitation of resonances, e.g., high frequency oscillations of the total current in asymmetric discharges, but do not provide a kinetic interpretation of these effects. In fact, they leave important questions open: How is current continuity ensured in the presence of energetic electron beams generated by the expanding sheaths that lead to a local enhancement of the conduction current propagating through the bulk? How do the beam electrons interact with cold bulk electrons? What is the kinetic origin of resonance phenomena? Based on kinetic simulations, we find that the energetic beam electrons interact with cold bulk electrons (modulated on a timescale of the inverse local electron plasma frequency) via a time dependent electric field outside the sheaths. This electric field is caused by the electron beam itself, which leaves behind a positive space charge, that attracts cold bulk electrons towards the expanding sheath. The resulting displacement current ensures current continuity by locally compensating the enhancement of the conduction current. The backflow of cold electrons and their interaction with the nonlinear plasma sheath cause the generation of multiple electron beams during one phase of sheath expansion and contribute to a strongly non-sinusoidal RF current. These kinetic mechanisms are the basis for a fundamental understanding of the electron power absorption dynamics and resonance phenomena in such plasmas, which are found to occur in discharges of different symmetries including perfectly symmetric plasmas.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS2013

Power Converters Secure Electronics in Harsh Environments

In order to harden power converters for the rigors of space, NASA awarded multiple SBIR contracts to Blacksburg, Virginia-based VPT Inc. The resulting hybrid DC-DC converters have proven valuable in aerospace applications, and as a result the company has generated millions in revenue from the product line and created four high-tech jobs to handle production.

Source record↗
DOE OSTI2025

Unraveling the Atomic Mechanism of the Crystalline Phase‐Dependent Structural Features and Special Spectral Design of α‐, β‐, and Ɛ‐Ga₂O₃

Atomic‐scale phase transformations profoundly influence the functional properties of Ga₂O₃ polymorphs. By combining irradiation experiments with microstructure characterization and theoretical approaches, phase‐specific energy‐dissipation pathways in α‐, β‐, and ε‐Ga₂O₃ are uncovered and strategies for targeted property design are outlined. Competing antiphase boundaries (APBs) and twin domain boundaries (TDBs) promote irreversible α→ε interconversion through domain fragmentation. In β‐Ga₂O₃, defect‐induced stress gradients drive two distinct local transformations: surface Ga‐aggregated β→δ that stabilizes transient states, and latent‐track‐confined β→κ phase transition with recoverable distortions via cation reordering. Under electronic excitation, β‐Ga₂O₃ forms nanohillocks via robust GaO₆ octahedra (high density/strong Ga─O bonds), while α/ε‐Ga₂O₃ generates nanopores from tetrahedral Ga looseness (low bonding energy), highlighting phase‐dependent surface dynamics shaped by atomic packing and bonding anisotropy. Defect‐regulated recombination suppresses visible photoluminescence in α/β‐Ga₂O₃, whereas in ε‐Ga₂O₃ bandgap narrowing of ΔE: 0.30 eV is observed, enhancing emission. Linking phase‐dependent defect‐carrier interactions and metastable‐phase engineering in Ga₂O₃ enables property optimization for power‐electronics and optoelectronics devices.

electronic state configuration↗
DOE OSTI2020

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Designing and optimizing high switching frequency, ultra-efficient converters requires detailed knowledge of the behavior and parasitic parameters for both active and passive components. Recently, wide bandgap transistors have enabled simultaneous increases in both switching frequency and efficiency due to higher maximum operating junction temperature limits, lower dc on-state resistances, and reduced parasitic inductances and capacitances. Yet, the early acceptance of gallium-nitride (GaN) switches was plagued by detrimental dynamic on-state resistance effects. This complex phenomenon for GaN devices is characterized by deviations in on-state resistance from dc operating characteristics based on design choices such as the magnitude and duration of both voltage and current stress, switching mode, and junction temperature. While device manufacturers have made improvements compared to early generation devices, experimental evidence from a survey of commercial GaN transistors highlight measurable change in on-state resistance still exists due to variations in voltage stress during hard-switching operation. After sharing insights for obtaining low noise measurements, an analysis method along with two metrics are proposed to characterize dynamic on-state resistance measurements for power electronics designers. Furthermore, quantifying the performance of GaN devices with standardized metrics facilitates a fair comparison between different GaN device technologies during converter development, enables manufacturing qualification for GaN switches, and provides a benchmark to catalyze improvement for the next generation of GaN device development.

14 SOLAR ENERGY↗
DOE OSTI2020

Thermal Design Consideration of Medium Voltage High Frequency Transformers

This paper describes a thermal design using epoxy potting for high frequency transformer (HFT) for medium voltage high power electronic applications, namely emerging solid-state transformers. To address HFT’s thermal stress problem, thermal performance of the HFT with air and epoxy potting cooling method are both simulated by magnetothermal-fluid coupling method (MTFCM). The effectiveness of the simulation analysis is verified in a 100 kW DC-DC resonant converter. Influencing factors including distance between the high frequency transformer and the metal enclosure, epoxy thermal conductivity and heat sink placements are simulated and analyzed. Finally, an optimal cooling structure is proposed for future high power HFTs.

Wang, Haoming↗
DOE OSTI2023

Fidelity Analysis of Complex Large-Scale Simulation Models of PEs (MARS) in Future Power Grids

With the proliferation of power electronic (PE)-based resources in the electric grid, there have been numerous different kinds of simulation models developed and studied to understand their dynamic behavior. Study of PE-based resources using each simulation model has its own distinct advantages and disadvantages. Therefore it is very important to carefully select the appropriate model for the evaluation of the PE-based resources. In this paper, one such effort is made to analyze the different types of models in the case of a multi-port autonomous reconfigurable solar power plant (MARS). The MARS integrates a hybrid photovoltaic (PV)-energy storage system (ESS) plant to high-voltage direct current (HVdc) system and transmission alternating current (ac) grid. The dynamic models are evaluated under different test cases varying the short-circuit ratio (SCR) and control algorithms. Recommendations are provided on the equipment study needs based on the analysis completed.

Marthi, Phani Ratna Vanamali↗
DOE OSTI2019

Effect of Perforation on the Thermal and Electrical Breakdown of Self-Rolled-Up Nanomembrane Structures

Strain-induced self-rolled-up membranes (S-RuM) are structures formed spontaneously by releasing a strained layer or layer stacks from its mechanical support, with unique applications in passive photonics, electronics, and bioengineering. Depending on the thermal properties of the strained layers, these structures can experience various thermally induced deformations. These deformations can be avoided and augmented with the addition of strategically placed perforations in the membrane. This study reports on the use of perforations to modify the thermal effects on strained silicon nitride S-RuM structures. Finally, a programmable fuse with well-defined thermal threshold, ultrasmall footprint, and 2-3 V voltage rating is demonstrated, which can potentially serve as an on-chip sensing device for power electronic circuits.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Wide bandgap semiconductor materials and devices

The technological and societal impacts of electronic devices based on Ge, Si, and compound semiconductors like GaAs have been profound, fueling the decades long quest in identifying ever-larger bandgap semiconductors to untap new applications and possibilities. Specifically, an increase in the bandgap leads to shorter wavelength emission and an increased breakdown electric field, which has direct consequences for solid-state lighting like light-emitting diodes (LEDs) and laser diodes (LDs) from the visible (blue-green, blue, and violet) and beyond (UV and deep-UV) spectral range and for radically improved power devices supported by a higher intrinsic breakdown strength. Wide bandgap (WBG) semiconductors represent the frontier of materials that satisfy these criteria and include group IV, III–V, and II–VI material families like SiC (3.2 eV), GaN (3.4 eV), and ZnO (3.4 eV), respectively. With even larger bandgaps exceeding 4 eV, ultrawide bandgap (UWBG) semiconductors include diamond, III-nitrides incorporating Al and B (e.g., AlN, BN, and AlGaN), and sesquioxides like Ga 2 O 3 and (Al,Ga) 2 O 3 . These materials span widely varying stages of technological maturity, with SiC and GaN platforms among the most mature with commercially available devices in RF and high-power electronics, while other platforms such as Ga 2 O 3 rapidly advancing and poised to enable new UV and deep-UV optoelectronic devices. This Special Topic on Wide Bandgap Semiconductor Materials and Devices covers broad research subtopics on WBG and UWBG materials that span bulk crystals, epitaxy and substrate technologies, fundamental defect science, and doping, as well as electronic and optoelectronic device fabrication and characterization. Here, we highlight works from the collection, which we categorize by material platform of SiC, III-nitrides, and Ga 2 O 3 and related alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Solid State Power Substations (SSPS): A Multi-Hierarchical Architecture from Substation to Grid Edge

With the growing deployment of distributed generation, or power electronic interfaced renewable energy and storage technologies, the nature and behavior of the grid is changing. Synchronous machine-driven asset contributions to the generation mix are shrinking, leading to concerns regarding grid stability. Furthermore, the scale of smaller distributed PE resources needed for managing the electrical network could dwarf the existing system leading to more complex optimization problems and communication interconnections. This paper introduces the concept of a hierarchal system of controllers that spans the grid edge or the customer end to distribution scale substations or solid-state power substation (SSPS). This concept focuses on minimizing the number of interfaces and optimization considerations in the grid by clustering resources into nodes and hubs. The work validates the concept in a controller hardware-in-the-loop (cHIL) platform.

Chinthavali, Madhu Sudhan↗
DOE OSTI2024

HERO WEC - Bills of Materials: WEC, RO System, and Submersible Pump

This submission includes detailed Bills of Materials for the NREL-designed and -built Hydraulic and Electric Reverse Osmosis Wave Energy Converter (HERO WEC), as well as the reverse osmosis assembly and submersible pump that are used in the HERO WEC. The WEC file is specific to the components and sub-components that are included on the in-water buoy portion of the WEC. The RO file is specific to the components and sub-components that are included on the reverse osmosis module that is used for both the hydraulic and electric configuration. The submersible pumps file is specific to the components and sub-components that are included on the submersible pump module that is used feed the reverse osmosis module when the HERO WEC is in the electric configuration. In addition to this submission, an additional submission available for the WEC model itself, including the power electronics enclosure, and reverse osmosis assembly that is needed to supply water in the electric submission. A link is provided below. More details on this project including data, CAD drawings, etc. can be found in the HERO-WEC main page link below. This data set has been developed by the National Renewable Energy Laboratory, operated by Alliance for Sustainable Energy, LLC, for the U.S. Department of Energy (DOE) under Contract No. DE-AC36-08GO28308. Funding provided U.S. Department of Energy Office of Energy Efficiency and Renewable Energy Water Power Technologies Office.

16 TIDAL AND WAVE POWER↗
DOE OSTI2021

Clean Grid Vision: A U.S. Perspective - Chapter 3. Transmission Grid-Supporting Technologies

High renewable penetration will bring different challenges to power system reliability and stability. Reduction of inertia has been of concern for more wide-spread instable events; however, with the advanced control functionalities provided by power electronics interface and proper storage compensation, renewable generators are capable of providing wide-range of grid services that can maintain and improve grid reliability and stability matrices. Many studies and testing has demonstrated those functions and many pilot projects throughout the world had proved the concepts are working.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Dynamically robust coordinated set point tracking of distributed DERs at point of common coupling

Low-inertia operation of small-scale power systems, such as a microgrid or a portion of a long feeder, requires careful coordination of the controller performance of the constituting devices. This challenge is exacerbated in microgrids serving the functionalities of a conventional synchronous-based generation unit while comprised of smaller DERs operating mainly interfaced through power electronics converters. This paper builds on the idea of set point modulation and proposes a two-level control strategy that aims to achieve superior performance at the point of common coupling (PCC) of microgrids by combining a local control level with a distributed and coordinated level. Several case studies on both AC and DC systems, the CIGRE low-voltage benchmark system as the AC system and a test DC microgrid, validate the performance of the proposed approach. The real-world applicability of the approach is established via a high-fidelity power hardware-in-the-loop (PHIL) experimental setup and an application case study on grid frequency regulation. The proposed approach enables a microgrid to participate in ancillary service provisions where speed and quality of regulation are critical.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2018

FY2017 Electrification Annual Progress Report

During fiscal year 2017 (FY 2017), the U.S. Department of Energy (DOE) Vehicle Technologies Office (VTO) funded early stage research & development (R&D) projects that address Batteries and Electrification of the U.S. transportation sector. The VTO Electrification Sub-Program is composed of Electric Drive Technologies, and Grid Integration activities. The Electric Drive Technologies group conducts R&D projects that advance Electric Motors and Power Electronics technologies. The Grid and Charging Infrastructure group conducts R&D projects that advance Grid Modernization and Electric Vehicle Charging technologies. This document presents a brief overview of the Electrification Sub-Program and progress reports for its R&D projects. Each of the progress reports provide a project overview and highlights of the technical results that were accomplished in FY 2017.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

Gate control of electron correlations towards Mott field effect transistors (MottFET)

The modulation of channel conductance in field-effect transistors (FETs) via metal-insulator-semiconductor structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal-to-insulator transition (MIT) offers the prospects of substantial modulation of the conducting electrons and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials toward novel Mott-based transistors, MottFETs requires the realization of their unique physical properties in a solid-state device. In this study, we present gate control of electron correlation using a solid-state device utilizing the oxide Mott system La 1-x Sr x VO 3 as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework. This behavior suggests an enhancement in effective mass and a reduction in effective carrier density as the system approaches its insulating state, consistent with theoretical predictions for Mott systems, suggesting at least 100× charge gain originating from the correlated behavior. These preliminary results pave the way toward the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Reduced-Order Structure-Preserving Model for Parallel-Connected Three-Phase Grid-Tied Inverters: Preprint

Given that next-generation infrastructures will contain large numbers of grid-connected inverters and these interfaces will be satisfying a growing fraction of system load, it is imperative to analyze the impacts of power electronics on such systems. However, since each inverter model has a relatively large number of dynamic states, it would be impractical to execute complex system models where the full dynamics of each inverter are retained. To address this challenge, we derive a reduced-order structure-preserving model for parallel-connected grid-tied three-phase inverters. Here, each inverter in the system is assumed to have a full-bridge topology, LCL filter at the point of common coupling, and the control architecture for each inverter includes a current controller, a power controller, and a phase-locked loop for grid synchronization. We outline a structure-preserving reduced-order inverter model for the setting where the parallel inverters are each designed such that the filter components and controller gains scale linearly with the power rating. By structure preserving, we mean that the reduced-order three-phase inverter model is also composed of an LCL filter, a power controller, current controller, and PLL. That is, we show that the system of parallel inverters can be modeled exactly as one aggregated inverter unit and this equivalent model has the same number of dynamical states as an individual inverter in the paralleled system. Numerical simulations validate the reduced-order models.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Transition characteristics and electron kinetics in microhollow cathode discharges

We demonstrate the transition characteristics and electron kinetics of microdischarges in a microgap with a cathode having microstructures using two-dimensional particle-in-cell/Monte Carlo collision (2d3v) simulations. It is found that the microdischarge is inside the hollow cavity at lower pressures, forming microhollow cathode discharges (MHCDs), while the dominant discharge moves outside the cavity at higher pressures, locating above the cathode rectangular protrusion tip. The spatial distributions of the microdischarge parameters (e.g., electric potential and electron density) are presented by capturing the transition characteristics. The electron kinetics of the microdischarges are examined based on the moment analysis of the electron Boltzmann equation. The collisional and non-collisional components of the electron power absorption are decomposed, which were seldomly investigated for microdischarges previously. The results provide fundamental insights into MHCD formation with a structured electrode at varying pressure conditions, which could be beneficial for the design and fabrication of microplasma devices in practical applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗