Transit-time considerations in p-i-n diodes.
Frequency response of p-i-n photodiode, taking account of mobility and nonuniform generation of carriers in i region
P-I-N DIODE↗
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Ternary compound thin film solar cells
A group of ternary compound semiconductor (I-III-VI2) thin films for future applications in photovoltaic devices is proposed. The consideration of these materials (CuInSe2, CuInTe2 and especially CuInS2) for long range device development is emphasized. Much of the activity to date has been concerned with the growth and properties of CuInX2 films. X-ray and electron diffraction analyses, Hall mobility and coefficient, resistivity and carrier concentration variations with substrate and film temperature as well as grain size data have been determined. Both p- and n-type films of CuInS2 and CuInSe2 have been produced. Single and double source deposition techniques have been utilized. Some data have been recorded for annealed films.
Kazmerski, L. L.↗
High temperature Hall-effect apparatus
A high-temperature Hall-effect apparatus is described which allows measurements up to temperatures greater than 1200 K using the van der Pauw method. The apparatus was designed for measurements on refractory materials having high charge carrier concentrations and generally low mobilities. Pressure contacts are applied to the samples. Consequently, special contacting methods, peculiar to a specific sample material, are not required. The apparatus has been semiautomated to facilitate measurements. Results are presented on n- and p-type silicon.
Wood, C.↗
Charge distribution and response time for a modulation-doped extrinsic infrared detector
The electric charge distribution and response time of a modulation-doped extrinsic infrared detector are determined. First, it is demonstrated theoretically that the photoconductive layer is effectively depleted of ionized majority-impurity charges so that scattering is small and mobility is high for photogenerated carriers. Then, using parameters appropriate to an actual detector, the predicted response time is 10 to the -8th to about 10 to the -9th s, which is much faster than comparable conventional detectors. Thus, the modulation-doped detector design would be valuable for heterodyne applications.
Hadek, Victor↗
Magnetic correlations in La(2-x)Sr(x)CuO4 from NQR relaxation and specific heat
La-139 and Cu-63 Nuclear Quadrupole Resonance (NQR) relaxation measurements in La(2-x)Sr(x)CuO4 for O = to or less than 0.3 and in the temperature range 1.6 + 450 K are analyzed in terms of Cu(++) magnetic correlations and dynamics. It is described how the magnetic correlations that would result from Cu-Cu exchange are reduced by mobile charge defects related to x-doping. A comprehensive picture is given which explains satisfactorily the x and T dependence of the correlation time, of the correlation length and of the Neel temperature T(sub n)(x) as well as being consistent with known electrical resistivity and magnetic susceptibility measurements. It is discussed how, in the superconducting samples, the mobile defects also cause the decrease, for T yields T(sub c)(+) of the hyperfine Cu electron-nucleus effective interaction, leading to the coexistence of quasi-localized, reduced magnetic moments from 3d Cu electrons and mobile oxygen p-hole carriers. The temperature dependence of the effective hyperfine field around the superconducting transition yields an activation energy which could be related to the pairing energy. New specific heat measurements are also presented and discussed in terms of the above picture.
Borsa, F.↗
Carbothermal Reduction Demonstration (CaRD) Gas Analysis Subsystem Development
The Carbothermal Reduction Demonstration (CaRD) project is currently developing a subscale system to demonstrate the operation and performance of the carbothermal reduction process and quantify the production of molar equivalent oxygen via carbon monoxide (CO) and carbon dioxide (CO2). Traditionally, gas chromatography (GC) systems are utilized to quantify gases due to their ability to separate volatile compounds within the gas mixture, followed by detection of the isolated component of interest. Despite their capabilities, GCs require carrier gas consumables for their operational mobile phase and consequently are not often considered a flight-forward option. An alternative analytical technique known as mass spectrometry measures the presence of gas phase molecules without the need of carrier gas. Residual gas analyzers (RGAs), which are smaller and rugged mass spectrometers, are not traditionally used to quantify analytes as they serve more as a monitoring tool. However, proper application and calibration can result in a flight-forward analytical instrument capable of direct quantification of volatile compounds of interest. Kennedy Space Center's role for the JSC led CaRD project is to design a gas analyzer system to detect and quantify the CO and CO2 gases produced during the carbothermal reaction utilizing a commercial version of the Mass Spectrometer observing lunar operations (MSolo) instrument. MSolo is a modified commercial off-the-shelf RGA, which consists of quadrupole mass filter and space rated electronics. MSolo is currently a TRL 6 technology and manifested on the PRIME-1 and VIPER missions. This paper describes leveraging MSolo based instrumentation to develop a gas analysis system for the work outlined in the 2023 International Conference on Environmental Systems (ICES) paper number 313.
Ryan P Gott↗
Investigation of superlattice device structures
This report describes the investigation of growth properties, and the structure of epitaxial multilayer Si(Si(1x)Ge(x)) films grown on bulk Silicon Substrates. It also describes the fabrication and characterization of MOSFET and MESFET devices made on these epitaxial films. Films were grown in a CVD reactor using hydrides of Si and Ge with H2 and He as carrier gases. Growth temperatures were between 900 C and 1050 C with most films grown at 1000 C. Layer thickness was between 300A and 2000A and total film thickness was between 0.25 micro m and 7 micro m. The Ge content (X) in the alloy layers was between .05 and 0.2. N-type multilayer films grown on (100) p-type Si showed Hall mobility in the range 1000 to 1500 sq cm/v for an average carrier concentration of approx. 10 to the 16th power/cu cm. This is up to 50% higher than the Hall mobility observed in epitaxial Si films grown under the same conditions and with the same average carrier concentration. The mobility enhancement occurred in films with average carrier concentration (n) from 0.7 x 10 to the 16th power to 2 x 10 to the 17th power/cu cm, and total film thickness greater than 1.0 micro m. No mobility enhancement was seen in n-type multilayer films grown on (111) Si or in p-type multilayer films. The structure of the films was investigated was using SEM, TEM, AES, SIMS, and X-ray double crystal diffraction techniques. The film composition profile (AES, SIMS) showed that the transition region between layers is of the order of about 100A. The TEM examination revealed a well defined layered structure with fairly sharp interfaces and good crystalline quality. It also showed that the first few layers of the film (closest to the substrate) are uneven, most probably due to the initial growth pattern of the epitaxial film where growth occurs first in isolated islands that eventually growth and coalesce. The X-ray diffraction measurement determined the elastic strain and strain relief in the alloy layers of the film and the elastic strain in the intervening Si layers.
Gergis, I. S.↗
Lighter-Than-Air (LTA) "AirStation": Unmanned Aircraft System (UAS) Carrier Concept
Proposals for adapting modern airship technologies for military missions have mostly focused on exploiting the airships high flight endurance and low fuel requirement to conduct direct surveillance missions requiring high degrees of persistence over the areas to be observed. While this mission has value, it constrains the airship in two regards. (1) It places all the surveillance sensors, communication systems, and other mission equipment in the airship itself. (2) It requires the airship to be physically in the vicinity of the areas to be directly observed. A more advanced utilization of airship technology would be to add the capability to deploy a separate set of surveillance equipment, thereby enabling indirect and distributed observation operations. This can be undertaken by installing surveillance equipment in a squadron of unmanned aircraft systems (UAS) that can be carried and operated remotely from the airship, and then return to the airship as a base of support. This could be accomplished by deploying 20-30 UASs on an optionally manned (5 person crew) airship. The mission focus of the airship UAS carrier would be for support of distributed intelligence, surveillance and reconnaissance (ISR), close air support (CAS), maritime patrol and interdiction, electronic warfare (EW), persistent area dominance and missile defense. The logic for utilizing an airship carrier over a ground base to deploy UAS will be examined. Whether to be used as a stand-alone platform or in concert with conventional intelligence gathering techniques, the airship UAS carrier can provide the following benefits: a mobile base that will remain accessible despite political fallout which may render a ground base unavailable for use, the psychological impact of a power projection tool that has no geographical limits (imagined in the same way a naval carrier group projects power), cost-saving intelligence gathering over manned alternatives (assumption), and a wider area of influence when compared to an immobile ground base that must facilitate the transfer of UAS to other bases in order to overfly particular areas (all operations, launch, recover, etc. take place from the airship).
Hochstetler, Ron↗
Isotopic Hg in an Allende carbon-rich residue
A carbon-rich residue from Allende subjected to stepwise heating yielded two isotopically resolvable types of Hg: one with an (Hg-196)/(Hg-202) concentration ratio the same as terrestrial (monitor) Hg; the other enriched in Hg-196 relative to Hg-202 by about 60 percent. Hg with the 202 isotope enriched relative to 196, as is found in bulk Allende, was not observed. Whether the result of mass fractionation or nucleosynthesis, the distinct types of Hg entered different carrier phases and were not thermally mobilized since the accretion of the Allende parent body.
Reed, G. W., Jr.↗
Development of a Spectral Model Based on Charge Transport for the Swift/BAT 32K CdZnTe Detector Array
The properties of 32K CdZnTe (4 x 4 sq mm large, 2 mm thick) detectors have been studied in the pre-flight calibration of the Burst Alert Telescope (BAT) on-board the Swift Gamma-ray Burst Explorer (scheduled for launch in November 2004). In order to understand the energy response of the BAT CdZnTe array, we first quantify the mobility-lifetime (mu tau) products of carriers in individual CdZnTe detectors, which produce a position dependency in the charge induction efficiency and results in a low energy tail in the energy spectrum. Based on a new method utilizing (57)Co spectra obtained at different bias voltages, the mu tau for electrons ranges from 5.0 x 10(exp -4) to 1.0 x 10(exp -2) sq cm/V while the mu tau for holes ranges from 1.3 x 10(exp -5 to 1.8 x 10(exp -4) sq cm/V. We find that this wide distribution of mu tau products explains the large diversity in spectral shapes between CdZnTe detectors well. We also find that the variation of mu tau products can be attributed to the difference of crystal ingots or manufacturing harness. We utilize the 32K sets of extracted mu tau products to develop a spectral model of the detector. In combination with Monte Carlo simulations, we can construct a spectral model for any photon energy or any incident angle.
Sato, Goro↗
Digital Alloy Absorber for Photodetectors
In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.
Hill, Cory J.↗
Reduced-Bandwidth Coding for Mobile Communication
Fade-resistant mobile systems use power and spectrum efficiently. Transmission system employs tone-calibrated technique (TCT). Residual carrier used in technique to reduce fading-induced effects and coherently demodulate received signal. TCT potentially efficient in use of power and of frequency spectrum. Coding technique, intended for residual-carrier transmission system, alleviates fading and spectrum crowding that hamper mobile communications.
Davarian, F.↗
Properties of Single Crystalline Semiconducting CoSb3
A study of the thermoelectric properties of the skutterudite compound CoSb3 was carried out on single crystals grown by the Bridgman gradient freeze technique. p- and n-type samples were obtained over a wide range of carrier concentration. Undoped As-grown crystals show p-type conductivity while n-type samples were obtained by addition of Te or Pd. Samples were characterized by x-ray diffractometry, electron microprobe analysis, and density measurements. The physical properties of CoSb3 such as linear thermal expansion coefficient, sound velocity, and Debye temperature were also determined and are presented. Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect measurements were performed between room temperature and about 900 K. Exceptionally high Hall mobilities were obtained on p-type samples with a maximum room-temperature Hall mobility of 3300 sq cm/V.s at a carrier concentration of 1 x 10(exp 17)/cc. The results of the transport property measurements are discussed and are in agreement with some recent predictions based on band structure calculations. The potential of CoSb3 for thermoelectric applications is evaluated.
Caillat, T.↗
Properties of GaN grown on sapphire substrates
Epitaxial growth of GaN on sapphire substrates using an open-tube growth furnace has been carried out to study the effects of substrate orientation and transfer gas upon the properties of the layers. It has been found that for the (0001) substrates, surface appearance was virtually independent of carrier gas and of doping levels. For the (1(-1)02) substrates surface faceting was greatly reduced when He was used as a transfer gas as opposed to H2. Faceting was also reduced when the GaN was doped with Zn, and the best surfaces for the (1(-1)02) substrates were obtained in a Zn-doped run using He as the transfer gas. The best sample in terms of electrical properties for the (1(-1)02) substrate had a mobility greater than 400 sq cm/V per sec and a carrier concentration of about 10 to the 17th per cu cm. This sample was undoped and used He as the transfer gas. The best (0001) sample was also grown undoped with He as the transfer gas and had a mobility of 300 sq cm/V per sec and a carrier concentration of 1 x 10 to the 18th per cu cm.
Crouch, R. K.↗
Laser beam methane detector
Instrument uses infrared absorption to determine methane concentration in liquid natural gas vapor. Two sensors measure intensity of 3.39 mm laser beam after it passes through gas; absorption is proportional to concentration of methane. Instrument is used in modeling spread of LNG clouds and as leak detector on LNG carriers and installations. Unit includes wheels for mobility and is both vertically and horizontally operable.
Hinkley, E. D., Jr.↗
Electrical characterization of Hg(1-x)Cd(x)Te alloys
Theoretical models are described for calculations of charge-carrier concentrations, Fermi energy, and conduction electron mobility as functions of x, temperature, and ionized and neutral defect concentrations of Hg(1-x)Cd(x)Te alloys. Measurements are reported of electron concentration and electron mobility from 5-300 K for alloys with x values of between 0.17 and 0.30. The electrical data are in reasonable agreement with theory, and were analyzed to obtain estimates of donor and acceptor state concentrations. The electron mobilities are calculated in terms of a microscopic theory of electrical conduction derived from the solution of the Boltzmann equation for the perturbed steady-state electron distribution function, and they show that longitudinal optical-phonon and charged and neutral defect scattering are the dominant mobility-limiting mechanisms.
Lehoczky, S. L.↗
Application of convolve-multiply-convolve SAW processor for satellite communications
There is a need for a satellite communications receiver than can perform simultaneous multi-channel processing of single channel per carrier (SCPC) signals originating from various small (mobile or fixed) earth stations. The number of ground users can be as many as 1000. Conventional techniques of simultaneously processing these signals is by employing as many RF-bandpass filters as the number of channels. Consequently, such an approach would result in a bulky receiver, which becomes impractical for satellite applications. A unique approach utilizing a realtime surface acoustic wave (SAW) chirp transform processor is presented. The application of a Convolve-Multiply-Convolve (CMC) chirp transform processor is described. The CMC processor transforms each input channel into a unique timeslot, while preserving its modulation content (in this case QPSK). Subsequently, each channel is individually demodulated without the need of input channel filters. Circuit complexity is significantly reduced, because the output frequency of the CMC processor is common for all input channel frequencies. The results of theoretical analysis and experimental results are in good agreement.
Lie, Y. S.↗
High Mobility SiGe/Si n-Type Structures and Field Effect Transistors on Sapphire Substrates
SiGe/Si n-type modulation doped field effect transistors (MODFETs) fabricated on sapphire substrates have been characterized at microwave frequencies for the first time. The highest measured room temperature electron mobility is 1380 sq cm/V-sec at a carrier density of 1.8 x 10(exp 12)/sq cm for a MODFET structure, and 900 sq cm/V-sec at a carrier density of 1.3 x 10/sq cm for a phosphorus ion implanted sample. A two finger, 2 x 200 micron gate n-MODFET has a peak transconductance of 37 mS/mm at a drain to source voltage of 2.5 V and a transducer gain of 6.4 dB at 1 GHz.
Alterovitz, Samuel A.↗