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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Characterization and prediction of the electromechanical wear of contact tips during wire arc additive manufacturing of 316L stainless steel

Here, this study seeks to better understand the degradation of the contact tip with respect to WAAM for a 316L wire electrode as well as explore methods of monitoring the contact tip state from process data. The contact tip, a consumable component, positions the wire and serves as the electrical contact surface between the wire electrode and the welding power supply. The wear of the contact tip was characterized in terms of material loss and material contamination for a set of tips worn to discrete levels as measured by the amount of wire fed or arc time. Geometrical characterization found a 49% increase in the bore exit area at 180 meters of wire fed. Machine learning models were developed to predict the relative bore exit area of the contact tip from arc-based process data and a random forest classifier exhibited favorable performance with a cross-validated f1-score of 0.84. The regression architecture implemented a multi-layer perceptron with the ability to predict the relative exit area with an $R^2$ score of 0.75. Key features used in the prediction include the standard deviation of the voltage and the time between shorts.

Contact tip wear↗
NASA NTRS1996

Two Electrical Switching Phenomena In A Silver-Filled Epoxy

Two distinct electrical switching phenomena observed in experiments on commercial silver-filled epoxy: Depending on geometry of epoxy layer or strip and of metal electrical contacts, either transition from "off" (high-resistance) state at low applied electric field to "on" (low-resistance) state at high applied electric field; or transition from "on" (low resistance) at low applied electric field to "off" (high resistance) at high applied electric field. Improved understanding of phenomena leads to design of new and improved surge arrestors.

Javadi, Hamid↗
NASA NTRS1976

Photovoltaic cell array

A photovoltaic cell array consisting of parallel columns of silicon filaments is described. Each fiber is doped to produce an inner region of one polarity type and an outer region of an opposite polarity type to thereby form a continuous radial semi conductor junction. Spaced rows of electrical contacts alternately connect to the inner and outer regions to provide a plurality of electrical outputs which may be combined in parallel or in series.

Eliason, J. T.↗
NASA NTRS1981

Silicon solar cells with nickel/solder metallization

The use of nickel plus solder is shown to be feasible for contact metallization for silicon solar cells by offering a relatively inexpensive method of making electrical contact with the cell surfaces. Nickel is plated on silicon solar cells using an electroless chemical deposition method to give contacts with good adhesion, and in some cases where adhesion is poor initially, sintering under relatively mild conditions will dramatically improve the quality of the bond without harming the p-n junction of the cell. The cells can survive terrestrial environment stresses, which is demonstrated by a 1000 hour test at 85 C and 85% relative humidity under constant forward bias of 0.45 volt.

Petersen, R. C.↗
NASA NTRS2009

Fabricating Copper Nanotubes by Electrodeposition

Copper tubes having diameters between about 100 and about 200 nm have been fabricated by electrodeposition of copper into the pores of alumina nanopore membranes. Copper nanotubes are under consideration as alternatives to copper nanorods and nanowires for applications involving thermal and/or electrical contacts, wherein the greater specific areas of nanotubes could afford lower effective thermal and/or electrical resistivities. Heretofore, copper nanorods and nanowires have been fabricated by a combination of electrodeposition and a conventional expensive lithographic process. The present electrodeposition-based process for fabricating copper nanotubes costs less and enables production of copper nanotubes at greater rate.

Yang, E. H.↗
NASA NTRS2005

Crane-Load Contact Sensor

An electronic instrument has been developed as a prototype of a portable crane-load contact sensor. Such a sensor could be helpful in an application in which the load rests on a base in a horizontal position determined by vertical alignment pins (see Figure 1). If the crane is not positioned to lift the load precisely vertically, then the load can be expected to swing once it has been lifted clear of the pins. If the load is especially heavy, large, and/or fragile, it could hurt workers and/or damage itself and nearby objects. By indicating whether the load remains in contact with the pins when it has been lifted a fraction of the length of the pins, the crane-load contact sensor helps the crane operator determine whether it is safe to lift the load clear of the pins: If there is contact, then the load is resting against the sides of the pins and, hence, it may not be safe to lift; if contact is occasionally broken, then the load is probably not resting against the pins, so it should be safe to lift. It is assumed that the load and base, or at least the pins and the surfaces of the alignment holes in the load, are electrically conductive, so the instrument can use electrical contact to indicate mechanical contact. However, DC resistance cannot be used as an indicator of contact for the following reasons: The load and the base are both electrically grounded through cables (the load is grounded through the lifting cable of the crane) to prevent discharge of static electricity. In other words, the DC resistance between the load and the pins is always low, as though they were always in direct contact. Therefore, instead of DC resistance, the instrument utilizes the AC electrical impedance between the pins and the load. The signal frequency used in the measurement is high enough (.1 MHz) that the impedance contributed by the cables and the electrical ground network of the building in which the crane and the base are situated is significantly greater than the contact impedance between the pins and the load. The instrument includes a signal generator and voltage-measuring circuitry, and is connected to the load and the base as shown in Figure 2. The output of the signal generator (typically having amplitude of the order of a volt) is applied to the load via a 50-resistor, and the voltage between the load and the pins is measured. When the load and the pins are not in contact, the impedance between them is relatively high, causing the measured voltage to exceed a threshold value. When the load and the pins are in contact, the impedance between them falls to a much lower value, causing the voltage to fall below the threshold value. The voltage-measuring circuitry turns on a red light-emitting diode (LED) to indicate the lower-voltage/ contact condition. Whenever the contact has been broken and the non-contact/higher-voltage condition has lasted for more than 2 ms, the voltage-measuring circuitry indicates this condition by blinking a green LED.

Youngquist, Robert↗
NASA NTRS1981

Back contacts for silicon-on-ceramic solar cells

Grooved substrate exposes back surface of photovoltaic cells, allowing dopant diffusion into surface and electrical contact. When substrate is coated successively with carbon and molten silicon, polycrystalline-silicon bridges form over grooves, but leave channels open. Best adhesion results when substrate grooves run perpendicular to direction of liquid-silicon layer and are closely spaced.

Schuller, T. L.↗
NASA NTRS1980

Nickel contacts for low cost solar cells

It is noted that nickel metallization of silicon solar cells offers a relatively inexpensive method of making electrical contact with the surface of the cell. More expensive methods, involving precious metals and costly processes, are widely used; these have been developed for space applications, where considerations of reliability predominate over those of cost. Since recent interest in terrestrial applications of solar cells has led to an increased concern over cost, nickel has assumed a position as a major candidate for solar cell metallization. It is shown that sintering can improve the integrity of the nickel-silicon bond. Evidence that the nickel-silicon contact can survive moderate environmental stress is presented.

Anderson, J. R.↗
NASA NTRS1995

Sinterless Formation Of Contacts On Indium Phosphide

Improved technique makes it possible to form low-resistivity {nearly equal to 10(Sup-6) ohm cm(Sup2)} electrical contacts on indium phosphide semiconductor devices without damaging devices. Layer of AgP2 40 Angstrom thick deposited on InP before depositing metal contact. AgP2 interlayer sharply reduces contact resistance, without need for sintering.

Weizer, Victor G.↗
NASA NTRS2003

Zipper Connectors for Flexible Electronic Circuits

Devices that look and function much like conventional zippers on clothing have been proposed as connectors for flexible electronic circuits. Heretofore, flexible electronic circuits have commonly included rigid connectors like those of conventional rigid electronic circuits. The proposed zipper connectors would make it possible to connect and disconnect flexible circuits quickly and easily. Moreover, the flexibility of zipper connectors would make them more (relative to rigid connectors) compatible with flexible circuits, so that the advantages of flexible circuitry could be realized more fully. Like a conventional zipper, a zipper according to the proposal would include teeth anchored on flexible tapes, a slider with a loosely attached clasp, a box at one end of the rows of mating teeth, and stops at the opposite ends. The tapes would be made of a plastic or other dielectric material. On each of the two mating sides of the zipper, metal teeth would alternate with dielectric (plastic) teeth, there being two metal teeth for each plastic one. When the zipper was closed, each metal tooth from one side would be in mechanical and electrical contact with a designated metal tooth from the other side, and these mating metal teeth would be electrically insulated from the next pair of mating metal teeth by an intervening plastic tooth. The metal teeth would be soldered or crimped to copper tabs. Wires or other conductors connected to electronic circuits would be soldered or crimped to the ends of the tabs opposite the teeth.

Barnes, Kevin N.↗
NASA NTRS2004

Deep-Sea Video Cameras Without Pressure Housings

Underwater video cameras of a proposed type (and, optionally, their light sources) would not be housed in pressure vessels. Conventional underwater cameras and their light sources are housed in pods that keep the contents dry and maintain interior pressures of about 1 atmosphere (.0.1 MPa). Pods strong enough to withstand the pressures at great ocean depths are bulky, heavy, and expensive. Elimination of the pods would make it possible to build camera/light-source units that would be significantly smaller, lighter, and less expensive. The depth ratings of the proposed camera/light source units would be essentially unlimited because the strengths of their housings would no longer be an issue. A camera according to the proposal would contain an active-pixel image sensor and readout circuits, all in the form of a single silicon-based complementary metal oxide/semiconductor (CMOS) integrated- circuit chip. As long as none of the circuitry and none of the electrical leads were exposed to seawater, which is electrically conductive, silicon integrated- circuit chips could withstand the hydrostatic pressure of even the deepest ocean. The pressure would change the semiconductor band gap by only a slight amount . not enough to degrade imaging performance significantly. Electrical contact with seawater would be prevented by potting the integrated-circuit chip in a transparent plastic case. The electrical leads for supplying power to the chip and extracting the video signal would also be potted, though not necessarily in the same transparent plastic. The hydrostatic pressure would tend to compress the plastic case and the chip equally on all sides; there would be no need for great strength because there would be no need to hold back high pressure on one side against low pressure on the other side. A light source suitable for use with the camera could consist of light-emitting diodes (LEDs). Like integrated- circuit chips, LEDs can withstand very large hydrostatic pressures. If power-supply regulators or filter capacitors were needed, these could be attached in chip form directly onto the back of, and potted with, the imager chip. Because CMOS imagers dissipate little power, the potting would not result in overheating. To minimize the cost of the camera, a fixed lens could be fabricated as part of the plastic case. For improved optical performance at greater cost, an adjustable glass achromatic lens would be mounted in a reservoir that would be filled with transparent oil and subject to the full hydrostatic pressure, and the reservoir would be mounted on the case to position the lens in front of the image sensor. The lens would by adjusted for focus by use of a motor inside the reservoir (oil-filled motors already exist).

Cunningham, Thomas↗
DOE OSTI2025

Statistical Analysis of Intertube Tunneling Contacts in the Macroscopic Electrical Conductivity of Carbon Nanotube Fibers

Here, this study investigates the influence of tunneling contact resistances between carbon nanotubes (CNTs) on electron transport and electrical conductivity of macroscopic carbon nanofibers (CNFs), which profoundly impacts the performance of CNT thin film electronics, CNF electron emitters and cathodes, and energy conversion and storage devices. Utilizing a self-consistent electrical contact model coupling a transmission line model with tunneling current, we calculate the contact resistances of a plethora of CNT-CNT contacts within a CNF fiber, which consists of aligned, densely packed CNTs. A statistical analysis is conducted, using Gaussian distributions to account for variations in contact lengths, tunneling gap distances, and single CNT aspect ratios, to calculate the CNT-CNT contact resistance and the overall resistance of CNT fiber. By scaling our model to a macroscopic level, our results are in good agreement with experimental measurements. Our calculation suggests that while increasing the contact overlap length diminishes individual CNT-CNT contact resistance, it could paradoxically increase macroscopic CNT fiber resistance for a given constant CNF mass density, which is due to that fact that a larger overlap length allows more CNTs to pack along an electrical conduction path per unit length, leading to more tunneling contact junctions connected in series and thus less number of parallel conduction paths within the fiber cross section. Increasing tunneling gap distance increases both individual contact and overall fiber resistance. This research provides a simple design tool for tailoring CNT fiber electrical properties to promote real-world applications using CNTs or similar low-dimensional materials.

36 MATERIALS SCIENCE↗
NASA NTRS1989

Electrical properties of materials for high temperature strain gage applications

A study was done on the electrical resistance of materials that are potentially useful as resistance strain gages at high temperatures under static strain conditions. Initially a number of binary alloys were investigated. Later, third elements were added to these alloys, all of which were prepared by arc melting. Several transition metals were selected for experimentation, most prepared as thin films. Difficulties with electrical contacts thwarted efforts to extend measurements to the targeted 1000 C, but results obtained did suggest ways of improving the electrical resistance characteristics of certain materials.

Brittain, John O.↗
NASA NTRS1989

Characterization of quantum well structures using a photocathode electron microscope

Present day integrated circuits pose a challenge to conventional electronic and mechanical test methods. Feature sizes in the submicron and nanometric regime require radical approaches in order to facilitate electrical contact to circuits and devices being tested. In addition, microwave operating frequencies require careful attention to distributed effects when considering the electrical signal paths within and external to the device under test. An alternative testing approach which combines the best of electrical and optical time domain testing is presented, namely photocathode electron microscope quantitative voltage contrast (PEMQVC).

Spencer, Michael G.↗
NASA NTRS1983

RF Sputtering of Gold Contacts On Niobium

Reliable gold contacts are deposited on niobium by combination of RF sputtering and photolithography. Process results in structures having gold only where desired for electrical contact. Contacts are stable under repeated cycling from room temperature to 4.2 K and show room-temperature contact resistance as much as 40 percent below indium contacts made by thermalcompression bonding.

Barr, D. W.↗
NASA NTRS1978

Center punched solar cell module development effort

The results are given of an advanced module development program with the objective of providing a low cost solar cell mechanical interconnect design. The design approach, which avoids soldering or welding operations, lends itself to automated assembly techniques thus supporting the Low-Cost Silicon Solar Array Project goals. The first group of six modules contained aluminum contact cells and the second group of six modules contained silver-titanium-palladium contact cells. Extensive component and environmental testing at the module level showed that reliable cell mechanical interconnection can be achieved when utilizing the proper electrical contact materials and pressures. A discussion is given of the module design, manufacturing procedure, test program, significant problem areas and solutions, and conclusions and recommendations as formulated and conducted by XEOS.

Ross, R. E.↗
NASA NTRS1978

Solar cells having integral collector grids

A heterojunction or Schottky barrier photovoltaic device is described, comprising a conductive base metal layer. A back surface field region was formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device. A metal alloy grid network was included. An insulating layer prevented electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer.

Evans, J. C., Jr.↗