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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Embrace the darkness: An experimental perspective on organic exciton–polaritons

Organic polaritonics has emerged as a captivating interdisciplinary field that marries the complexities of organic photophysics with the fundamental principles of quantum optics. By harnessing strong light–matter coupling in organic materials, exciton–polaritons offer unique opportunities for advanced device performance, including enhanced energy transport and low-threshold lasing, as well as new functionalities like polariton chemistry. In this review, we delve into the foundational principles of exciton–polaritons from an experimental perspective, highlighting the key states, processes, and timescales that govern polariton phenomena. Our review centers on the spectroscopy of exciton–polaritons. We overview the primary spectroscopic approaches that reveal polariton phenomena, and we discuss the challenges in disentangling polaritonic signatures from spectral artifacts. We discuss how organic materials, due to their complex photophysics and disordered nature, not only present challenges to the conventional polariton models but also provide opportunities for new physics, like manipulating dark electronic states. As the research field continues to grow, with increasingly complex materials and devices, this review serves as a valuable introductory guide for researchers navigating the intricate landscape of organic polaritonics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Unintended gas breakdowns in narrow gaps of advanced plasma sources for semiconductor fabrication industry

Occurrence of unintended gas breakdown in the narrow gaps of plasma processing chambers is one of the critical challenges in developing advanced plasma sources. Here, we present a combined experimental and theoretical study of unintended discharges in the narrow gaps of plasma processing chambers and report significant drop of the gas breakdown voltage in the presence of a background plasma facing the gap. Experimentally measured breakdown voltages decrease in subsequent breakdown events due to wall erosion caused by the discharge. Therefore, preventing and mitigating the first discharge is of paramount importance. An analysis of kinetic simulation results indicates that the charged particle influx from the background plasma in the processing chamber into the gap is responsible for the onset of early breakdown: higher charged particle density within the gap modifies the electric field profile, allowing unintended breakdowns to occur at a significantly reduced threshold voltage.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Design and performance of parallel-channel nanocryotrons in magnetic fields

We introduce a design modification to conventional geometry of the cryogenic three-terminal switch, the nanocryotron (nTron). The conventional geometry of nTrons is modified by including parallel current-carrying channels, an approach aimed at enhancing the device's performance in magnetic field environments. The common challenge in nTron technology is to maintain efficient operation under varying magnetic field conditions. Here, we show that the adaptation of parallel channel configurations leads to an enhanced gate signal sensitivity, an increase in operational gain, and a reduction in the impact of superconducting vortices on nTron operation within magnetic fields up to 1 T. Contrary to traditional designs that are constrained by their effective channel width, the parallel nanowire channels permits larger nTron cross sections, further bolstering the device's magnetic field resilience while improving electro-thermal recovery times due to reduced local inductance. This advancement in nTron design not only augments its functionality in magnetic fields but also broadens its applicability in technological environments, offering a simple design alternative to existing nTron devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air

Here we report a comparative study of three rectifying gate metals, W, Pd, and Pt/Au, on ultrawide bandgap Al 0.86 Ga 0.14 N barrier/Al 0.7 Ga 0.3 N channel high electron mobility transistors for use in extreme temperatures. The transistors were electrically characterized from 30 to 600 °C in air. Of the three gate metals, the Pt/Au stack exhibited the smallest change in threshold voltage (0.15 V, or 9% change between the 30 and 600 °C values, and a maximum change of 42%), the highest on/off current ratio (1.5 × 10 6 ) at 600 °C, and a modest forward gate leakage current (0.39 mA/mm for a 3,V gate bias) at 600 °C. These favorable results showcase AlGaN channel high electron mobility transistors' ability to operate in extreme temperature environments.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Reliable operation of Cr 2 O 3 :Mg/ $β$-Ga 2 O 3 p–n heterojunction diodes at 600 °C

Beta gallium oxide (β-Ga 2 O 3 )-based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are, thus, promising for applications in power electronic devices and harsh environment sensors. However, the long-term reliability of these ultra-wideband gap (UWBG) semiconductor devices remains barely addressed and may be strongly influenced by chemical reactions at the p–n heterojunction interface. Here, we experimentally demonstrate operation and evaluate the reliability of Cr 2 O 3 :Mg/β-Ga 2 O 3 p–n heterojunction diodes during extended operation at 600 °C, as well as after 30 repeated cycles between 25 and 550 °C. The calculated pO 2 -temperature phase stability diagram of the Ga-Cr-O material system predicts that Ga 2 O 3 and Cr 2 O 3 should remain thermodynamically stable in contact with each other over a wide range of oxygen pressures and operating temperatures. The fabricated Cr 2 O 3 :Mg/β-Ga 2 O 3 p–n heterojunction diodes show room-temperature on/off ratios >104 at ±5 V and a breakdown voltage (V Br ) of -390 V. The leakage current increases with increasing temperature up to 600 °C, which is attributed to Poole–Frenkel emission with a trap barrier height of 0.19 eV. Over the course of a 140-h thermal soak at 600 °C, both the device turn-on voltage and on-state resistance increase from 1.08 V and 5.34 mΩ cm 2 to 1.59 V and 7.1 mΩ cm 2 , respectively. This increase is attributed to the accumulation of Mg and MgO at the Cr 2 O 3 /Ga 2 O 3 interface as observed from the time-of-flight secondary ion mass spectrometry analysis. These findings inform future design strategies of UWBG semiconductor devices for harsh environment operation and underscore the need for further reliability assessments for β-Ga 2 O 3 -based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

GaN devices play a major role in modern electronics, providing high-power handling, efficient high-frequency operation, and resilience in harsh environments. However, electric field crowding at the edge of the anode often limits its full potential, leading to single-event effects (SEEs) at lower bias voltages under heavy ion radiation. Here, in this work, we report on the performance of homojunction GaN vertical PiN diodes with a hybrid edge termination design under heavy ion irradiation, specifically, oxygen ions, chlorine ions, Cf-252 fission fragments, and alpha particles from an Am-241 source. The unique hybrid edge termination (HET) design provides better electric field management, preventing breakdown from occurring at the edge of the anode at lower voltages. The results of this study reveal that these devices exhibit excellent tolerance to 12-MeV oxygen and 16-MeV chlorine ions, owing to their low linear energy transfer (LET) and range in GaN. However, single-event burnout (SEB) is observed during the Cf-252 exposure at about 50% of the diodes' electrical breakdown voltage due to the presence of higher LET and longer-range ions. Optical and scanning electron microscopy (SEM) reveal that the damage that caused by SEB lies close to the center of these devices rather than the anode edge. Devices with junction termination extension (JTE) instead of HET edge termination also show similar SEB when irradiated with Cf-252 fission fragments. Physical damage due to SEB occurs at the edge of the anode for these devices. These comparative results show the benefits of HET for enhancing the resistance of GaN-based PiN diodes to heavy ion irradiation.

42 ENGINEERING↗
DOE OSTI2024

NiGa 2 O 4 interfacial layers in NiO/Ga 2 O 3 heterojunction diodes at high temperature

NiO/Ga 2 O 3 heterojunction diodes have attracted attention for high-power applications, but their high temperature performance and reliability remain underexplored. Here, we report the time evolution of the electrical properties in the widely studied p-NiO/n-Ga 2 O 3 heterojunction diodes and formation of NiGa 2 O 4 interfacial layers at high temperatures. Results of our thermal cycling experiment show an initial leakage current increase which stabilizes after sustained thermal load, due to reactions at the NiO–Ga 2 O 3 interface. High-resolution TEM microstructure analysis of the devices after thermal cycling indicates that the NiO–Ga 2 O 3 interface forms a ternary compound at high temperatures, and thermodynamic calculations suggest the formation of the spinel NiGa 2 O 4 layer between NiO and Ga 2 O 3 . First-principles defect calculations find that NiGa 2 O 4 shows low p-type intrinsic doping and hence can serve to limit electric field crowding at the interface. Vertical NiO/ Ga 2 O 3 diodes with intentionally grown 5 nm thin spinel-type NiGa 2 O 4 interfacial layers show an excellent device ON/OFF ratio of >10 10 (± 3 V), V ON of ~1.9 V, and increased breakdown voltage of ~1.2 kV for an initial unoptimized 300 lm diameter device. These p–n heterojunction diodes are promising for high-voltage, high temperature applications.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2024

Quantitative assessment of selenium diffusion and passivation in CdSeTe solar cells probed by spatially resolved cathodoluminescence

The introduction of selenium in CdSeTe/CdTe solar cells has led to improved device performances attributed to the passivation of bulk defects. In this work, high-resolution cathodoluminescence experiments are performed on a series of CdSeTe/CdTe thin films with different Se concentrations to quantify the mechanisms and the passivation role of Se. We demonstrate a universal dependence between the Se concentration and the radiative efficiency and a ten-fold enhancement of the luminescence between CdTe and CdSe 0.4 Te 0.6 . Raw luminescence maps are converted into maps of the Se concentration, revealing its graded profile within the stack. We demonstrate the diffusion of Se along CdTe grain boundaries induced by the cadmium chloride annealing treatment and determine the diffusion coefficients, which are more than eight times higher at grain boundaries than in grain interiors. These results provide microscopic insights into the distribution of Se and its impact on the passivation of CdSeTe/CdTe solar cells.

14 SOLAR ENERGY↗
DOE OSTI2024

Electron irradiation effects on the optical properties of Hf- and Zn-doped β -Ga 2 O 3

Optical and electrical properties of Hf- and Zn-doped β-Ga 2 O 3 samples, which are n-type and insulating, respectively, were altered via high-energy electron irradiation at 2.5 or 0.5 MeV. The β-Ga 2 O 3 :Hf samples irradiated with 2.5 MeV electrons experienced a color change from blue to yellow and a large drop in conductivity, attributed to the creation of gallium vacancies, which compensate donors. This irradiation resulted in the absence of free carrier absorption and the presence of Cr 3+ photoluminescence (PL). PL mapping prior to irradiation revealed optically active ZnO precipitates that formed during the growth of β-Ga 2 O 3 :Zn. These precipitates have a 384 nm (3.23 eV) stacking fault emission in the core; in the outer shell of the precipitate, the PL blue-shifts to 377 nm (3.29 eV) and a broad defect band is observed. After 0.5 MeV electron irradiation, the defect band broadened and increased in intensity. The blue PL band (435 nm) of β-Ga 2 O 3 was enhanced for both Hf- and Zn-doped samples irradiated with 0.5 MeV. This enhancement is correlated with an increase in oxygen vacancies.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Planarization of p -GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

The large polarization barriers between the quantum wells and quantum barriers in long-wavelength GaN-based light-emitting diodes (LEDs) inhibit their performance by requiring excess driving voltages to reach standard operating current densities. Lateral injection of carriers directly into quantum wells is required to circumvent this issue. V-defects are naturally occurring inverted hexagonal defects with semipolar {$10\bar{1}1$}-plane sidewalls generated on surface depressions from threading dislocations. LEDs engineered to intentionally generate V-defects below the active region of the LED can achieve lateral carrier injection through the V-defect sidewalls and have already been able to demonstrate world record wall-plug efficiencies for LEDs in the green-red wavelengths. V-defects can be enlarged during kinetically limited growth where the growth rate of the c-plane GaN is faster than that of their sidewalls, leaving them unfilled. We report on the metal organic chemical vapor deposition growth conditions required to fill in V-defects with p-GaN during epitaxial growth of the LED post the active region. Circular transmission length measurements of Pd/Au contacts processed on p-GaN surfaces with various amounts of unfilled V-defects showed no significant difference in their sheet resistance and specific contact resistance. J–V measurements of LEDs grown with varying unfilled V-defect densities showed no significant difference in the forward bias regime. However, in the reverse bias regime, catastrophic breakdown occurred at markedly lower voltages for samples with larger unfilled V-defect densities. This suggests that unfilled V-defects may act as hotspots for device failure, and planarizing LED surfaces may help prevent early degradation of LED devices.

Chemical vapor deposition↗
DOE OSTI2024

Effect of fabrication processes on BaTiO 3 capacitor properties

There is an increasing desire to utilize complex functional electronic materials such as ferroelectrics in next-generation microelectronics. As new materials are considered or introduced in this capacity, an understanding of how we can process these materials into those devices must be developed. Here, the effect of different fabrication processes on the ferroelectric and related properties of prototypical metal oxide (SrRuO 3 )/ferroelectric (BaTiO 3 )/metal oxide (SrRuO 3 ) heterostructures is explored. Two different types of etching processes are studied, namely, wet etching of the top SrRuO 3 using a NaIO 4 solution and dry etching using an Ar + -ion beam (i.e., ion milling). Polarization-electric-field hysteresis loops for capacitors produced using both methods are compared. For the ion-milling process, it is found that the Ar + beam can introduce defects into the SrRuO 3 /BaTiO 3 /SrRuO 3 devices and that the milling depth strongly influences the defect level and can induce a voltage imprint on the function. Realizing that such processing approaches may be necessary, work is performed to ameliorate the imprint of the hysteresis loops via ex situ “healing” of the process-induced defects by annealing the ferroelectric material in a barium-and-oxygen-rich environment via a chemical-vapor-deposition-style process. This work provides a pathway for the nanoscale fabrication of these candidate materials for next-generation memory and logic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Excessive charge, beam loading, and impedance collapse thresholds for a velvet emitter

Excess emission has been observed from velvet cathodes with total emission times >150 ns. In this diode experiment, we produce a sub-relativistic electron beam with the ability to consistently change γ from 1.2 to 1.5 and β = 0.5–0.75. Electron emission in this particular diode geometry requires electric fields >40 kV/cm. The current increases at steady rates >0.05 A/ns after the head of the pulse, indicating an expansion of the emission surface and reduction in the effective AK gap. Small transients of excess emission (or arcs) are consistently observed for current pulses exceeding 150 ns. The excess emission results in beam loaded levels ≥10 kV on the diode voltage. The effects described here are compounded as diode voltage is increased. The principal objective of these experiments is to quantify electric field emission thresholds, current ramps, excess emission delays, effective beam loading, and impedance collapse.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based in situ uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to –0.15% at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures and can be easily extended to include additional characterization techniques.

Electrical properties and parameters↗
DOE OSTI2024

Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga 2 O 3 Schottky diodes

Ga 2 O 3 unipolar devices are of high interest due to their ~8 MV/cm predicted breakdown fields, which have not yet been achieved due to premature device failure. Pre- and post-failure defect analysis of Ni–Ga 2 O 3 Schottky diodes in ultrahigh vacuum (UHV) and air were performed using depth-resolved cathodoluminescence, high angle annular dark field scanning transmission electron microscopy, and energy dispersive x-ray analysis to understand the physical mechanisms that precede premature breakdown. The breakdown voltage in UHV was dramatically reduced by nearly 40% compared with the breakdown in air. This reduction in the breakdown voltage correlated with post-breakdown differences in Ni distribution, indicating that the coordination and bonding of Ni contribute strongly to electrical behavior in Ni–Ga 2 O 3 Schottky diodes. Breakdown studies in UHV revealed that Ni diffuses away more from the metal–semiconductor interface than with air breakdown, where Ni localizes more near the interface, indicative of the preferential formation of a Ni oxide under O-poor conditions. These measurements also identified the formation of divacancy-interstitial complexes and their characteristic luminescence signature ~150 nm from the interface, the densities of which correlated with breakdown fields. These findings show that electric-field-induced degradation occurs via the rearrangement of native point defects, which act as an additional precursor to device failure. Macroscopically, they show the impact of both vacuum conditions and metal reactivity on Ga 2 O 3 device fabrication.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Harnessing ferro-valleytricity in pentalayer rhombohedral graphene for memory and compute

Two-dimensional materials with multiple degrees of freedom, including spin, valleys, and orbitals, open up an exciting avenue for engineering multifunctional devices. Beyond spintronics, these degrees of freedom can lead to novel quantum effects such as valley-dependent Hall effects and orbital magnetism, which could revolutionize next-generation electronics. However, achieving independent control over valley polarization and orbital magnetism has been a challenge due to the need for large electric fields. A recent breakthrough involving pentalayer rhombohedral graphene has demonstrated the ability to individually manipulate anomalous Hall signals and orbital magnetic hysteresis, forming what is known as a valley-magnetic quartet. Here, we leverage the electrically tunable ferro-valleytricity of pentalayer rhombohedral graphene to develop nonvolatile memory and in-memory computation applications. We propose an architecture for a dense, scalable, and selector-less nonvolatile memory array that harnesses the electrically tunable ferro-valleytricity. In our designed array architecture, nondestructive read and write operations are conducted by sensing the valley state through two different pairs of terminals, allowing for independent optimization of read/write peripheral circuits. The power consumption of our PRG-based array is remarkably low, with only ∼6 nW required per write operation and ∼2.3 nW per read operation per cell. This consumption is orders of magnitude lower than that of the majority of state-of-the-art cryogenic memories. Additionally, we engineer in-memory computation by implementing majority logic operations within our proposed nonvolatile memory array without modifying the peripheral circuitry. In conclusion, our framework presents a promising pathway toward achieving ultra-dense cryogenic memory and in-memory computation capabilities.

2D materials↗
DOE OSTI2024

Impact of mechanical tolerances on partial turn skipping in helical flux compression generator

Maintaining tight mechanical tolerances of the components used in helical flux compression generators is crucial for optimizing device performance. Moving beyond current literature, which provides various approximations for acceptable tolerances, a 3D simulation of the armature stator interaction during generator operation was developed, revealing that existing equations frequently misestimate the tolerance limits. Without restricting the generality of the presented approach, the focus was primarily on the armature’s concentricity and roundness, comparing the acceptable tolerance limits between generators of different sizes. An analytical approach for select geometries was developed, confirming the 3D results. Quantitative results reveal that a steeper Gurney angle and increased winding pitch allow for less restrictive tolerances for eccentricity and ellipticity. Even small deviations from the ideal armature positioning and shape will result in fluctuations of the output current time-derivative, observed experimentally and in simulation. Larger deviations then cause partial turn skipping, associated with loss of magnetic flux. The simulation elucidates the impact of tolerance deviations on generator performance by offering precise tolerance ranges for various generator sizes, thereby facilitating informed design decisions.

42 ENGINEERING↗
DOE OSTI2025

Off-state magnetoresistance in long-channel germanium Schottky-barrier MOSFETs

An increasing magnetic field perpendicular to an undoped semiconductor surface at low temperature is known to strengthen the binding of localized electrons to stationary ions, as the wavefunction's tails evolve from exponential to Gaussian. It is also known that application of a high bias voltage to a depleted semiconductor can liberate bound charge and induce a large drop in electrical resistance. We connect these established results to experimental electrical transport measurements on off-state germanium Schottky-barrier metal–oxide–semiconductor field-effect transistor (MOSFETs) with an aluminum oxide insulating dielectric and platinum germanide contacts. We make measurements at the three distinct orientations of the magnetic field with respect to the substrate and the current. At 6 K, we observe sharp attenuation of current by more than 2 orders of magnitude, within 60 mT, at a crossover magnetic field perpendicular to the substrate. A 1 T magnetic field attenuates the current by more than 4 orders of magnitude. The strength of the attenuation and the value of the crossover field are controlled by both the gate–source and drain–source voltages. The attenuation is much weaker when the magnetic field is parallel to the current. Finally, we orient the magnetic field parallel to the substrate, but perpendicular to the current, allowing us to distinguish charge hopping at the oxide interface from charge hopping in the bulk. In conclusion, this large off-state magnetoresistance can be exploited for cryogenic magnetic- and photo-detection, and for high-bias, low-leakage MOSFETs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Sputtered ferroelectric aluminum scandium boron nitride (Al 1−x−y B x Sc y N)/ n -GaN heterostructures

This work demonstrates ferroelectric switching in magnetron sputtered Al 1−x−y B x Sc y N/ n -GaN heterostructures. Using high power impulse magnetron sputtering, a silicon doped n -GaN bottom electrode with an electron concentration of 6.0 × 10 19 cm −3 is grown on c-plane sapphire. Al 1−x−y B x Sc y N films are prepared on the GaN surface with Al:B:Sc ratios that produce tensile, lattice matched, or compressive epitaxial strains. X-ray diffraction shows that lattice matched and compressively strained Al 1−x−y B x Sc y N compositions are pseudomorphic, while partial relaxation is observed for tensilely strained Al 1−x−y B x Sc y N/ n -GaN heterostructures. Electrically, the Al 1−x−y B x Sc y N/ n -GaN stacks show robust hysteresis; the P–E loops are fully saturated with both lattice matched and compressively strained Al 1−x−y B x Sc y N compositions exhibiting remanent polarization values of 135 μC/cm 2 . For comparison, Al 1−x−y B x Sc y N films are also prepared on metal organic chemical vapor deposition and single crystal GaN substrates to extend strain and morphology trends to more common substrate types. This report validates that sputter deposition is a feasible technique for fabricating strain-tunable ferroelectric III–N heterostructures with high crystalline fidelity and smooth surface morphologies.

42 ENGINEERING↗