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An electronic filter is described which simultaneously maintains a constant bandwidth and a constant center frequency gain as the input signal frequency varies, and remains self-tuning to that center frequency over a decade range. The filter utilizes a field effect transistor (FET) as a voltage variable resistance in the bandpass frequency determining circuit. The FET is responsive to a phase detector to achieve self-tuning.
A low phase noise frequency divider composed of a grating arrangement is disclosed. The grating arrangement supplies selected portions of an input reference signal to be divided to a tuned circuit without any phase noise due to the grating action. The arrangement which in one embodiment consists of an FET is connected to the tuned circuit input to short out the input except when the input reference signal amplitude crosses ground level in a positive direction and a gate enabling signal is present at the gate electrode of the FET. The gate enabling signal alone does not decouple the tuned circuit input from ground, therefore phase noise, due to the leading and trailing edges of each gate-enabling signal, is substantially eliminated.
An improved pulse stretching circuit comprising: a high speed wide-band amplifier connected in a fast charge integrator configuration; a holding circuit including a capacitor connected in parallel with a discharging network which employs a resistor and an FET; and an output buffer amplifier. Input pulses of very short duration are applied to the integrator charging the capacitor to a value proportional to the input pulse amplitude. After a predetermined period of time, conventional circuitry generates a dump pulse which is applied to the gate of the FET making a low resistance path to ground which discharges the capacitor. When the dump pulse terminates, the circuit is ready to accept another pulse to be stretched. The very short input pulses are thus stretched in width so that they may be analyzed by conventional pulse height analyzers.
It is shown that a substantial reduction in internal noise generated by the photodiode and the preamplifier can be produced by a modest cooling of the components and by optimization of preamplifier design. With this reduction the silicon detectors can, in the SNR range of 5 or greater, produce better performance than photon-noise-limited photomultipliers. The circuit noise and frequency response model suggested by Goranson and Skipper (1974) is expanded to include the effects of frequency dependent FET voltage noise and FET load resistance noise. The modeling of the photodiode and preamplifier is described and the noise characteristics of a 0.01 Hz to 100 kHz bandwidth detector/amplifier channel are evaluated.
Device can be obtained by driving basic circuit through nonlinear FET input stage. Frequency of VCO is linearized with FET and total variance is varactor controlled. Experimental device exhibited linearity of better than plus or minus one percent for total frequency of plus or minus 10 millihertz.
An S-band radio frequency interference (RFI) receiver to analyze and identify sources of RFI problems in the Deep Space Network DSN tracking stations is described. The RFI receiver is a constant gain, double conversion, open loop receiver with dual sine/cosine channel outputs, providing a total of 20 MHZ monitoring capability. This receiver is computer controlled using a MODCOMP II miniprocessor. The RFI receiver has been designed to operate at a 150 Kelvin system noise temperature accomplished by cascading two low noise field effect transistor (FET) amplifiers for the receiver front-end. The first stage low noise FET amplifier is mounted at the feed horn to minimize any cable losses to achieve a lower system noise temperature. The receiver is tunable over the frequency range of 2150 to 2450 MHz in both sine/cosine output channels with a resolution of 100 kHz.
Thermal resistances among FETs of a variable number of gates in parallel are compared. Although the thermal resistance per cell for multiple cells is higher, the total thermal resistance is still low because all the cells are parallel to one another. This implies that the multiple-cell structure is capable of dissipating more power than the single-cell structure and therefore of being used as a power FET.
An analysis of different preamplification systems for use with room temperature mercuric iodide X-ray detectors has been performed. Resistor-, drain-, and light-feedback preamplifiers have been studied. Energy resolution values of 295 eV (FWHM) for an Fe-55 source (5.9 keV) and 225 eV (FWHM) for a pulser have been obtained with both the detector and the input FET at room temperature using a pulsed-light feedback preamplifier. Improvement in energy resolution by cooling the input FET using a small Peltier element has been discussed.
For obtaining optimum performance from cooled infrared detectors used in astronomy, it is often necessary to operate the preamplifier transistor (usually a JFET) at a higher temperature than that provided by the cryogen. Various means of elevating the temperature of the FET above the temperature of its environment are considered. A description is presented of a method which uses a 10 V Zener diode (actually an avalanche diode) as a self-stabilizing heater element. The diode is mounted in good thermal contact with the FET, and both are isolated from the work surface by a link of poor conductivity. The diode is driven by a stable, constant voltage power supply.
Useful charge integration has been achieved in high quality photovoltaic InSb diodes when combined with a FET multiplexing (MUX) scheme. An experimental detector assembly with a linear array of 128 InSb diodes coupled to a FEX MUX has been developed. The first stage J-FET preamp, pixel reset switch, MUX, and the InSb array are contained in a hybrid microcircuit of compact dimensions. A low noise preamplifier topology which capitalizes on the low video line capacitance inherent with hybrid fabrication techniques is also utilized. Measurements indicate a signal-to-noise ratio of over 1000:1 and response uniformity of + or - 2 percent. Sample images show subtle detail which supports the estimated radiometric sensitivity of 0.01 K.
The maturity of the molecular beam epitaxy (MBE) technique for preparing device quality GaAs material for microwave applications is demonstrated by the excellent performance characteristics of K-band GaAs power field-effect transistors (FETs) fabricated on the MBE wafers. An output power of 710 mW with 4.5-dB gain and 17.7 percent power-added efficiency was achieved at 21 GHz with a 1.26-mm gate width pi-gate device. A similar device with a 0.56-mm gate width produced an output power of 320 mW with 5.0-dB gain and 26.6 percent power-added efficiency at 21 GHz. These are the best results yet reported to date for GaAs power FETs operated in the K-band frequency range.
Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.
Very high performance is being developed in compound semiconductor transistors. High frequency and low noise figure operation in the GaAs FET have already been established. Substantially more performance increases are expected. A comparison of compound semiconductor materials, and their alloys, the physical concepts of high average electron velocity, and the special benefits of modulation doped heterojunction FET devices is presented.
The characteristics of two matrix switches designed for high capacity satellite communications systems are described. The switches provide routing between 20 input and 20 output ports at an IF frequency during TDMA operations. Switching speeds of 10 nsec are projected for dual gate GaAs FETs. The two designs differed in the coupling configurations, bandwidth (2.69-1.2 GHz), off-state isolation (-54 to -40 dB), switching speeds (16-37 nsec), and gain ripple (5.3-2.2 dB). Both designs achieved a 2 nsec reconfiguration rate. Further development is required to reduce the ripple effects and attain the potential 2 nsec switching speed offered by the GaAs FETs.
The objectives of this investigation were to determine the characteristics of semiconductor devices at low temperatures. The output characteristics of several currently available semiconductor devices and devices fabricated at Marshall Space Flight Center were measured over a range of gate voltages. Large variations in low-temperature performance, not only from type to type, but from field effect transistor (FET) to FET of the same type were obtained. By increasing the carrier concentrations at low temperatures through extra heavy doping, metal oxide semiconductor field effect transistor (MOSFET) device was fabricated that operated at 4.2K. To verify the low-temperature operation of a heavily doped device, this procedure was repeated. Their noise spectrum was analyzed at 4.2K. Suggestions were made as to possible fabrication methods, techniques, and other semiconductor materials that might improve the device charactersitics at low temperatures. A procedure for using an electric field to drift dopants through the insulating oxide to produce a very thin, heavily doped region under the gate of a MOSFET was initiated. Capacitance s a function of voltage plots was suggested as a method for determining the level of dopant drift.
The Airborne Visible/Infrared Imaging Spectrometer (AVIRIS) instrument uses four separate focal plane assemblies consisting of line array detectors that are multiplexed to a common J-FET preamp using a FET switch multiplexing (MUX) technique. A 32-element silicon line array covers the spectral range from 0.41 to 0.70 microns. Three additional 64-element indium antimonide (InSb) line arrays cover the spectral range from 0.68 to 2.45 microns. The spectral sampling interval per detector element is nominally 9.8 nm, giving a total of 224 spectral channels. All focal planes operate at liquid nitrogen temperature and are housed in separate dewars. Electrical performance characteristics include a read noise of less than 1000 e(-) in all channels, response and dark nonuniformity of 5 percent peak to peak, and quantum efficiency of greater than 60 percent.
The use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated. Results of high-frequency and quasi-static capacitance-voltage measurements, as well as enhancement mode insulated gate field-effect transistor (FET) transductance and drain current stability studies, all support the efficacy of this approach for metal-insulator-semiconductor application of this semiconductor. In particular, surface state values in the range of 10 to the 10th to a few 10 to the 11th/sq cm per eV and enhancement mode FET drain current drifts of less than 5 percent over a 12 h test period were measured.
Gallium arsenide integrated-circuit chip switches any of three microwave input signals to any of three output ports. Measuring 4.9 mm on side, chip contains nine field-effect transistor (FET) crosspoint switches. Housed in custom-designed package with standard connectors for easy integration into system. FET's on chip operated as passive switches and consume no static power and insignificant amounts of switching power. Chip module cascades with similar modules into large arrays handling as many as 100 inputs and 100 outputs. Applications include switching and routing vast amounts of data between computers at extremely high speed. On communications satellite, chip switches microwave signals to and from Earth stations and other satellites.