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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7

Effect of a magnetic field on the diffusion of an electron-hole plasma in germanium.

Study in germanium of an optically injected electron-hole plasma, parallel and perpendicular to an applied magnetic field. The density gradient within the crystal was measured directly by an infrared-beam-absorption technique. Diffusion measurements made parallel to the magnetic field are adequately explained by the theory.

Gurnee, M. N.↗

Xenon Filled Silicon Germanium Thermoelectric Generators

An analysis is presented that shows the desirability and feasibility of using a xenon fill in the initial stages of operation of a silicon-germanium radioisotope thermoelectric generator to be used in outer-planetary exploration. The xenon cover gas offers protection against oxidation and against material sublimation, and allows the generator to deliver required power throughout the prelaunch and launch phases. The protective mechanisms afforded by the xenon cover gas and the mechanization of a xenon supply system are also discussed.

Dewinter, F.↗

Electron tunnelling into amorphous germanium and silicon.

Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.

Smith, C. W.↗

Residual conductivity in unannealed amorphous germanium.

An enhanced residual conductivity which persists long after cessation of illumination has been observed in amorphous germanium at 77 K. The effect may be thermally quenched by heating to 120 K, returning the sample to its initial condition.

Burke, T. J.↗

Dopant precipitation in silicon-germanium alloys.

The model commonly used to describe dopant precipitation in silicon-germanium alloys is discussed. The results of an experimental program are fit to the model in order to determine the long-term behavior of the thermoelectric properties of the n-type 80 at. % Si/20 at. % Ge alloy. Thermoelectric property projections to twelve years of operating time are given.

Raag, V.↗

Lithium drifted germanium system

General characteristics of the lithium-drifted germanium photodiode-Dewar-preamplifier system and particular operating instructions for the device are given. Information is included on solving operational problems.

Fjarlie, E. J.↗

Silicon germanium technology program at JPL

Review of the results of a program aimed at obtaining a better understanding of the long-term performance of a thermoelectric generator using silicon germanium. The results obtained concern the contact resistivity of the thermoelectric couples, the electrical resistance of the multifoil thermal insulation, and the application of resistance coatings to the unicouples in order to prevent the loss of output power due to internal shunting paths.

Stapfer, G.↗

Sublimation behavior of silicon nitride /Si3N4/ coated silicon germanium /SiGe/ unicouples

For the Multi-Hundred Watt (MHW) Radioisotope Thermoelectric Generator (RTG), the silicon germanium unicouples are coated with silicon nitride to minimize degradation mechanisms which are directly attributable to material sublimation effects. A program is under way to determine the effective vapor suppression of this coating as a function of temperature and gas environment. The results of weight loss experiments, using Si3N4 coated hot shoes (SiMo), operating over a temperature range from 900 C to 1200 C, are analyzed and discussed. These experiments were conducted both in high vacuum and at different pressures of carbon monoxide (CO) to determine its effect on the coating. Although the results show a favorable vapor suppression at all operating temperatures, the pressure of the CO and the thickness of the coating have a decided effect on the useful lifetime of the coating.

Stapfer, G.↗

Quantitative determination of zero-gravity effects on electronic materials processing germanium crystal growth with simultaneous interface demarcation. Experiment MA-060

Experiment MA-060 was designed to establish the crystal growth and segregation characteristics of a melt in a directional solidification configuration under near zero-g conditions. The interface demarcation technique was incorporated into the experiment since it constitutes a unique tool for recording the morphology of the growth rate throughout solidification, and for establishing an absolute time reference framework for all stages of the solidification process. An extensive study was performed of the germanium crystals grown during the Apollo-Soyuz Test Project mission. It was found that single crystal growth was achieved and that the interface demarcation functioned successfully. There was no indication that convection driven by thermal or surface tension gradients was present in the melt. The gallium segregation, in the absence of gravity, was found to be fundamentally different in its initial and its subsequent stages from that of the ground-based tests. None of the existing theoretical models for growth and segregation can account for the observed segregation behavior in the absence of gravity.

Gatos, H. C.↗

Germanium-silicon solid solutions

An experiment on melting and directional crystallization of an antimony (Sb) doped germanium silicon (GeSi) solid solution was designed for the Apollo-Soyuz Test Project (ASTP) to study the possibility of using zero-g conditions for obtaining solid-solution monocrystals with uniformly distributed components. Crystallization in the zero-g environment did not occur under ideal stationary growth and segregation conditions. Crystallization under zero-g conditions revealed the heterogeneous nature of Si and Sb distribution in the cross sections of crystals. The presence of the radial thermal gradient in the multipurpose furnace could be one of the reasons for such Si and Sb distribution. The structure of space-grown crystals correlates with the nature of heterogeneities of Si and Sb distribution in crystals. The type of surface morphology and the contour observed in space-grown crystals were never observed in ground-based crystals and indicate the absence of wetting of the graphitized walls of the ampoule by the melt during melting and crystallization.

Zemskov, V. S.↗

Fabrication and performance of intrinsic germanium photodiodes

The paper presents fabrication details for an intrinsic germanium photodiode developed for study of atmospheric constituents, the airglow and auroras in the 1-2 micron spectral range. Attention is given to cutting of the single crystal, spreading of the lithium dispersion, sputtering of a gold coating, and surface passivation. A wavelength response curve is presented.

Beiting, E. J., III↗