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NASA NTRS2009

Submillimeter-Wave Amplifier Module with Integrated Waveguide Transitions

To increase the usefulness of monolithic millimeter-wave integrated circuit (MMIC) components at submillimeter-wave frequencies, a chip has been designed that incorporates two integrated, radial E-plane probes with an MMIC amplifier in between, thus creating a fully integrated waveguide module. The integrated amplifier chip has been fabricated in 35-nm gate length InP high-electron-mobility-transistor (HEMT) technology. The radial probes were mated to grounded coplanar waveguide input and output lines in the internal amplifier. The total length of the internal HEMT amplifier is 550 m, while the total integrated chip length is 1,085 m. The chip thickness is 50 m with the chip width being 320 m. The internal MMIC amplifier is biased through wire-bond connections to the gates and drains of the chip. The chip has 3 stages, employing 35-nm gate length transistors in each stage. Wire bonds from the DC drain and gate pads are connected to off-chip shunt 51-pF capacitors, and additional off-chip capacitors and resistors are added to the gate and drain bias lines for low-frequency stability of the amplifier. Additionally, bond wires to the grounded coplanar waveguide pads at the RF input and output of the internal amplifier are added to ensure good ground connections to the waveguide package. The S-parameters of the module, not corrected for input or output waveguide loss, are measured at the waveguide flange edges. The amplifier module has over 10 dB of gain from 290 to 330 GHz, with a peak gain of over 14 dB at 307 GHz. The WR2.2 waveguide cutoff is again observed at 268 GHz. The module is biased at a drain current of 27 mA, a drain voltage of 1.24 V, and a gate voltage of +0.21 V. Return loss of the module is very good between 5 to 25 dB. This result illustrates the usefulness of the integrated radial probe transition, and the wide (over 10-percent) bandwidth that one can expect for amplifier modules with integrated radial probes in the submillimeter-regime (>300 GHz).

Samoska, Lorene↗

NASA NTRS2009

High-Sensitivity GaN Microchemical Sensors

Systematic studies have been performed on the sensitivity of GaN HEMT (high electron mobility transistor) sensors using various gate electrode designs and operational parameters. The results here show that a higher sensitivity can be achieved with a larger W/L ratio (W = gate width, L = gate length) at a given D (D = source-drain distance), and multi-finger gate electrodes offer a higher sensitivity than a one-finger gate electrode. In terms of operating conditions, sensor sensitivity is strongly dependent on transconductance of the sensor. The highest sensitivity can be achieved at the gate voltage where the slope of the transconductance curve is the largest. This work provides critical information about how the gate electrode of a GaN HEMT, which has been identified as the most sensitive among GaN microsensors, needs to be designed, and what operation parameters should be used for high sensitivity detection.

Son, Kyung-ah↗

NASA NTRS2006

MMIC DHBT Common-Base Amplifier for 172 GHz

Figure 1 shows a single-stage monolithic microwave integrated circuit (MMIC) power amplifier in which the gain element is a double-heterojunction bipolar transistor (DHBT) connected in common-base configuration. This amplifier, which has been demonstrated to function well at a frequency of 172 GHz, is part of a continuing effort to develop compact, efficient amplifiers for scientific instrumentation, wide-band communication systems, and radar systems that will operate at frequencies up to and beyond 180 GHz. The transistor is fabricated from a layered structure formed by molecular beam epitaxy in the InP/InGaAs material system. A highly doped InGaAs base layer and a collector layer are fabricated from the layered structure in a triple mesa process. The transistor includes two separate emitter fingers, each having dimensions of 0.8 by 12 m. The common-base configuration was chosen for its high maximum stable gain in the frequency band of interest. The input-matching network is designed for high bandwidth. The output of the transistor is matched to a load line for maximum saturated output power under large-signal conditions, rather than being matched for maximum gain under small-signal conditions. In a test at a frequency of 172 GHz, the amplifier was found to generate an output power of 7.5 mW, with approximately 5 dB of large-signal gain (see Figure 2). Moreover, the amplifier exhibited a peak small-signal gain of 7 dB at a frequency of 176 GHz. This performance of this MMIC single-stage amplifier containing only a single transistor represents a significant advance in the state of the art, in that it rivals the 170-GHz performance of a prior MMIC three-stage, four-transistor amplifier. [The prior amplifier was reported in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 49.] This amplifier is the first heterojunction- bipolar-transistor (HBT) amplifier built for medium power operation in this frequency band. The performance of the amplifier as measured in the aforementioned tests suggests that InP/InGaAs HBTs may be superior to high-electron-mobility (HEMT) transistors in that the HBTs may offer more gain per stage and more output power per transistor.

Paidi, Vamsi↗

NASA NTRS2010

Special Component Designs for Differential-Amplifier MMICs

Special designs of two types of electronic components transistors and transmission lines have been conceived to optimize the performances of these components as parts of waveguide-embedded differential-amplifier monolithic microwave integrated circuits (MMICs) of the type described in the immediately preceding article. These designs address the following two issues, the combination of which is unique to these particular MMICs: Each MMIC includes a differential double-strip transmission line that typically has an impedance between 60 and 100 W. However, for purposes of matching of impedances, transmission lines having lower impedances are also needed. The transistors in each MMIC are, more specifically, one or more pair(s) of InP-based high-electron-mobility transistors (HEMTs). Heretofore, it has been common practice to fabricate each such pair as a single device configured in the side-to-side electrode sequence source/gate/drain/gate/source. This configuration enables low-inductance source grounding from the sides of the device. However, this configuration is not suitable for differential operation, in which it is necessary to drive the gates differentially and to feed the output from the drain electrodes differentially. The special transmission-line design provides for three conductors, instead of two, in places where lower impedance is needed. The third conductor is a metal strip placed underneath the differential double-strip transmission line. The third conductor increases the capacitance per unit length of the transmission line by such an amount as to reduce the impedance to between 5 and 15 W. In the special HEMT-pair design, the side-to-side electrode sequence is changed to drain/gate/source/gate/ drain. In addition, the size of the source is reduced significantly, relative to corresponding sizes in prior designs. This reduction is justified by the fact that, by virtue of the differential configuration, the device has an internal virtual ground, and therefore there is no need for a low-resistance contact between the source and the radio-frequency circuitry. The source contact is needed only for DC biasing. These designs were implemented in a single-stage-amplifier MMIC. In a test at a frequency of 305 GHz, the amplifier embedded in a waveguide exhibited a gain of 0 dB; after correcting for the loss in the waveguide, the amplifier was found to afford a gain of 0.9 dB. In a test at 220 GHz, the overall gain of the amplifier- and-waveguide assembly was found to be 3.5 dB.

Kangaslahti, Pekka↗

NASA NTRS2003

NASA Tech Briefs, February 2003

opics covered include: Integrated Electrode Arrays for Neuro-Prosthetic Implants; Eroding Potentiometers; Common/Dependent-Pressure-Vessel Nickel-Hydrogen Batteries; 120-GHz HEMT Oscillator With Surface-Wave-Assisted Antenna; 80-GHz MMIC HEMT Voltage-Controlled Oscillator; High-Energy-Density Capacitors; Microscale Thermal-Transpiration Gas Pump; Instrument for Measuring Temperature of Water; Improved Measurement of Coherence in Presence of Instrument Noise; Compact Instruments Measure Helium-Leak Rates; Irreversible Entropy Production in Two-Phase Mixing Layers; Subsonic and Supersonic Effects in Bose-Einstein Condensate; Nanolaminate Mirrors With "Piston" Figure-Control Actuators; Mixed Conducting Electrodes for Better AMTEC Cells; Process for Encapsulating Protein Crystals; Lightweight, Self-Deployable Wheels; Grease-Resistant O Rings for Joints in Solid Rocket Motors; LabVIEW Serial Driver Software for an Electronic Load; Software Computes Tape-Casting Parameters; Software for Tracking Costs of Mars Projects; Software for Replicating Data Between X.500 and LDAP Directories; The Technical Work Plan Tracking Tool; Improved Multiple-DOF SAW Piezoelectric Motors; Propulsion Flight-Test Fixture; Mechanical Amplifier for a Piezoelectric Transducer; Swell Sleeves for Testing Explosive Devices; Linear Back-Drive Differentials; Miniature Inchworm Actuators Fabricated by Use of LIGA; Using ERF Devices to Control Deployments of Space Structures; High-Temperature Switched-Reluctance Electric Motor; System for Centering a Turbofan in a Nacelle During Tests; Fabricating Composite-Material Structures Containing SMA Ribbons; Optimal Feedback Control of Thermal Networks; Artifacts for Calibration of Submicron Width Measurements; Navigating a Mobile Robot Across Terrain Using Fuzzy Logic; Designing Facilities for Collaborative Operations; and Quantitating Iron in Serum Ferritin by Use of ICP-MS.

Source record↗

NASA NTRS2012

On-Wafer Measurement of a Multi-Stage MMIC Amplifier with 10 dB of Gain at 475 GHz

JPL has measured and calibrated a WR2.2 waveguide wafer probe from GGB Industries in order to allow for measurement of circuits in the 325-500 GHz range. Circuits were measured, and one of the circuits exhibited 10 dB of gain at 475 GHz. The MMIC circuit was fabricated at Northrop Grumman Corp. (NGC) as part of a NASA Innovative Partnerships Program, using NGC s 35-nm-gatelength InP HEMT process technology. The chip utilizes three stages of HEMT amplifiers, each having two gate fingers of 10 m in width. The circuits use grounded coplanar waveguide topology on a 50- m-thick substrate with through substrate vias. Broadband matching is achieved with coplanar waveguide transmission lines, on-chip capacitors, and open stubs. When tested with wafer probing, the chip exhibited 10 dB of gain at 475 GHz, with over 9 dB of gain from 445-490 GHz. Low-noise amplifiers in the 400-500 GHz range are useful for astrophysics receivers and earth science remote sensing instruments. In particular, molecular lines in the 400-500 GHz range include the CO 4-3 line at 460 GHz, and the CI fine structure line at 492 GHz. Future astrophysics heterodyne instruments could make use of high-gain, low-noise amplifiers such as the one described here. In addition, earth science remote sensing instruments could also make use of low-noise receivers with MMIC amplifier front ends. Present receiver technology typically employs mixers for frequency down-conversion in the 400-500 GHz band. Commercially available mixers have typical conversion loss in the range of 7-10 dB with noise figure of 1,000 K. A low-noise amplifier placed in front of such a mixer would have 10 dB of gain and lower noise figure, particularly if cooled to low temperature. Future work will involve measuring the noise figure of this amplifier.

Samoska, Lorene A.↗

NASA NTRS2012

Cryogenic Amplifier Based Receivers at Submillimeter Wavelengths

The operating frequency of InP high electron mobility transistor (HEMT) based amplifiers has moved well in the submillimeter-wave frequencies over the last couple of years. Working amplifiers with usable gain in waveguide packages has been reported beyond 700 GHz. When cooled cryogenically, they have shown substantial improvement in their noise temperature. This has opened up the real possibility of cryogenic amplifier based heterodyne receivers at submillimeter wavelengths for ground-based, air-borne, and space-based instruments for astrophysics, planetary, and Earth science applications. This paper provides an overview of the science applications at submillimeter wavelengths that will benefit from this technology. It also describes the current state of the InP HEMT based cryogenic amplifier receivers at submillimeter wavelengths.

cryogenically cooled superconductorinsulator- supe↗

NASA NTRS2002

Packaging of microwave integrated circuits operating beyond 100 GHz

Several methods of packaging high speed (75-330 GHz) InP HEMT MMIC devices are discussed. Coplanar wirebonding is presented with measured insertion loss of less than 0.5dB and return loss better than -17 dB from DC to 110 GHz. A motherboard/daughterboard packaging scheme is presented which supports minimum loss chains of MMICs using this coplanar wirebonding method. Split waveguide block packaging approaches are presented in G-band (140-220 GHz) with two types of MMIC-waveguide transitions: E-plane probe andantipodal finline.

HEMT MMICS power amplifiers↗

NASA NTRS2005

Beyond G-band : a 235 GHz InP MMIC amplifier

We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.

high electron mobility transistors (HEMTs)↗

NASA NTRS2007

Broadband Characterization of a 100 to 180 GHz Amplifier

Atmospheric science and weather forecasting require measurements of the temperature and humidity vs. altitude. These sounding measurements are obtained at frequencies close to the resonance frequencies of oxygen (118 GHz) and water (183 GHz) molecules. We have characterized a broadband amplifier that will increase the sensitivity of sounding and other instruments at these frequencies. This study demonstrated for the first t1me continuous low noise amplification from 100 to 180 GHz. The measured InP monolithic millimeter-wave Integrated circuit (MMIC) amplifier had more than 18 dB of gain from 100 to 180 GHz and 15 dB of gain up to 220 GHz. This is the widest bandwidth low noise amplifier result at these frequencies to date. The circuit was fabricated in Northrop Grumman Corporation 35 nm InP high electron mobility transistor (HEMT).

high electron mobility transistors (HEMT's)↗

NASA NTRS2013

Low Noise Amplifiers for 140 Ghz Wide-Band Cryogenic Receivers

We report S-parameter and noise measurements for three different Indium Phosphide 35-nanometer-gate-length High Electron Mobility Transistor (HEMT) Low Noise Amplifier (LNA) designs operating in the frequency range centered on 140 gigahertz. When packaged in a Waveguide Rectangular-6.1 waveguide housing, the LNAs have an average measured noise figure of 3.0 decibels - 3.6 decibels over the 122-170 gigahertz band. One LNA was cooled to 20 degrees Kelvin and a record low noise temperature of 46 Kelvin, or 0.64 decibels noise figure, was measured at 152 gigahertz. These amplifiers can be used to develop receivers for instruments that operate in the 130-170 gigahertz atmospheric window, which is an important frequency band for ground-based astronomy and millimeter-wave imaging applications.

High Electron Mobility Transistors (HEMTs)↗

NASA NTRS2016

Cryogenic Low Noise MMIC Amplifiers for U-Band (40-60 GHz)

In this work, we describe monolithic millimeter-wave integrated circuit (MMIC) Low Noise Amplifier (LNA) and mixer designs for U-Band, also known as the WR19 waveguide band (40-60 GHz). The LNAs were fabricated in NGC’s 35 nm InP HEMT MMIC process. The MMICs were packaged in WR19 waveguide housings and tested for noise, both at room temperature and cryogenically. We present the results, including a comparison to the state-of-the-art, and discuss applications for amplifiers in this frequency range. To date, these are the first cryogenic 35 nm InP MMIC results covering the 40-60 GHz range. We achieved a noise temperature less than 30 K over the 40-60 GHz range, when the amplifiers were cryogenically cooled. These results are comparable with other results in the literature, and we believe are the lowest reported for MMICs in the 50-60 GHz range.

MMIC↗

NASA NTRS1987

Optically controlled microwave devices and circuits: Emerging applications in space communications systems

Optical control of microwave devices and circuits by an optical fiber has the potential to simplify signal distribution networks in high frequency communications systems. The optical response of two terminal and three terminal (GaAs MESFET, HEMT, PBT) microwave devices are compared and several schemes for controlling such devices by modulated optical signals examined. Monolithic integration of optical and microwave functions on a single semiconductor substrate is considered to provide low power, low loss, and reliable digital and analog optical links for signal distribution.

Bhasin, Kul B.↗

NASA NTRS1987

Non-linearity in measurement systems: Evaluation method and application to microwave radiometers

A simple method for determination and correction of nonlinaearity in measurement systems is presented. The technique is applicable to a wide range of measuring systems. The basic concept, an analysis, and a sample application are given. Nonlinearity of the Goldstone DSS 13 low noise HEMT 2.3 GHz (S-band) radiometer system results in noise temperature measurement errors. These errors are successfully correct with this method.

Stelzried, C. T.↗

NASA NTRS1987

Low-noise cryogenic transmission line

New low-noise cryogenic input transmission lines have been developed for the Deep Space Network (DSN) at 1.668 GHz for cryogenically cooled Field Effect Transistors (FET) and High Electron Mobility Transistor (HEMT) amplifiers. These amplifiers exhibit very low noise temperatures of 5 K to 15 K, making the requirements for a low-noise input transmission line critical. Noise contribution to the total amplifier system from the low-noise line is less than 0.5 K for both the 1.668-GHz and 2.25-GHz FET systems. The 1.668-GHz input line was installed in six FET systems which were implemented in the DSN for the Venus Balloon Experiment. The 2.25-GHz input line has been implemented in three FET systems for the DSN 34-m HEF antennas, and the design is currently being considered for use at higher frequencies.

Norris, D.↗

NASA NTRS1988

X-band system performance of the very large array

The Very Large Array (VLA) is being equipped to receive telemetry from Voyager 2 during the Neptune encounter in 1989. Cryogenically cooled amplifiers are being installed on each of the 27 antennas. These amplifiers are currently a mix of field effect transistors (FETs) and high electron mobility transistors (HEMTs) and exhibit zenith system temperatures that range from 30 to 52 K. The system temperatures and aperture efficiencies determined during the past year are summarized. The nominal values of the noise diode calibration are compared with derived values made under the assumption of a uniform atmosphere over the array. Gain values are determined from observations of unresolved radio sources whose flux densities are well known. The tests suggest that the completed VLA will have a ratio of gain to system temperature that is approximately 4.4 dB above that of a single 64 m antenna of the Deep Space Network.

Ulvestad, J. S.↗

NASA NTRS1988

Ultra-low-noise cryogenic high-electron-mobility transistors

Quarter-micrometer gate-length high-electron-mobility transistors (HEMTs) for cryogenic low-noise application with very low light sensitivity have been developed. At room temperature, these exhibit a noise figure of 0.4 dB with associated gain of 15 dB at 8 GHz. At a temperature of 12.5 K the minimum noise temperature of 5.3 +/- 1.5 K has been measured at 8.5 GHz, which is the best noise performance observed to date for any microwave transistors. The results clearly demonstrate the potential for low-temperature low-noise applications.

Duh, K. H. George↗

NASA NTRS1989

Optically-Controlled Microwave Devices And Circuits

NASA Technical Memorandum discusses physical basis and dc and microwave characteristics of optically-controlled microwave devices described in literature. Emphasis on responses of GaAs/GaAlAs high-electron-mobility transistors (HEMT's) and GaAs metal/semiconductor field-effect transistors (MESFET's) to light. Devices used to detect radio-frequency modulation of optical signals, to control gains of amplifiers, and to provide injection locking of oscillators.

Bhasin, Kul B.↗