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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defect

A dominant hole trap has been identified in p-type bulk GaAs employing deep level transient and photocapacitance spectroscopies. The trap is present at a concentration up to about 4 x 10 to the 16th per cu cm, and it has two charge states with energies 0.54 + or - 0.02 and 0.77 + or - 0.02 eV above the top of the valence band (at 77 K). From the upper level the trap can be photoexcited to a persistent metastable state just as the dominant midgap level, EL2. Impurity analysis and the photoionization characteristics rule out association of the trap with impurities Fe, Cu, or Mn. Taking into consideration theoretical results, it appears most likely that the two charge states of the trap are the single and double donor levels of the arsenic antisite As(Ga) defect.

Lagowski, J.↗
DOE OSTI2021

Impurity transport studies at the HSX stellarator using active and passive CVI spectroscopy

The transport of carbon impurities has been studied in the helically symmetric stellarator experiment (HSX) using active and passive charge exchange recombination spectroscopy (CHERS). For the analysis of the CHERS signals, the STRAHL impurity transport code has been re-written in the python programming language and optimized for the application in stellarators. In addition, neutral hydrogen densities both along the NBI line of sight as well as for the background plasma have been calculated using the FIDASIM code. By using the basinhopping algorithm to minimize the difference between experimental and predicted active and passive signals, significant levels of impurity diffusion are observed. In this work, comparisons with neoclassical calculations from DKES/PENTA show that the inferred levels exceed the neoclassical transport by about a factor of four in the core and more than 100 times towards the plasma edge, thus indicating a high level of anomalous transport. This observation is in agreement with experimental heat diffusivites determined from a power balance analysis which exhibits strong anomalous transport as well.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1998

Segregation Coefficients of Impurities in Selenium by Zone Refining

The purification of Se by zone refining process was studied. The impurity solute levels along the length of a zone-refined Se sample were measured by spark source mass spectrographic analysis. By comparing the experimental concentration levels with theoretical curves the segregation coefficient, defined as the ratio of equilibrium concentration of a given solute in the solid to that in the liquid, k = x(sub s)/x(sub l) for most of the impurities in Se are found to be close to unity, i.e., between 0.85 and 1.15, with the k value for Si, Zn, Fe, Na and Al greater than 1 and that for S, Cl, Ca, P, As, Mn and Cr less than 1. This implies that a large number of passes is needed for the successful implementation of zone refining in the purification of Se.

Su, Ching-Hua↗
DOE OSTI2024

The impact of helium on plasma-driven hydrogen permeation and implications for direct internal recycling in the fusion fuel cycle

Abstract Metal foil pumps (MFPs) are the leading technology for direct internal recycling (DIR) of hydrogen isotopes from the plasma exhaust in future fusion plants. MFPs rely on the concept of superpermeation, where superthermal H atoms directly absorb into the metal foil, rapidly diffuse, and desorb downstream. To date, studies of superpermeation have predominantly employed either pure hydrogen or in some cases trace levels of impurities. The plasma exhaust is expected to contain just ∼1% helium, but in DIR the source gas would be enriched in helium as hydrogen isotopes are extracted. In this work, we explore the impact of helium on hydrogen superpermeation at low temperature (75 °C–200 °C) using Pd-based foils. To first order, the flux scaled linearly with the hydrogen mole fraction. Stable permeation was observed until the helium fraction reached ∼80%, where the flux began to decline slowly with time. In addition, short term (1–5 min) exposure to pure helium plasma significantly attenuated subsequent hydrogen plasma permeation, and the degree was more dramatic at elevated temperature. This attenuation was correlated with He retention in the foils, which was detected by time-of-flight secondary ion mass spectrometry at low levels (<0.1 at. %) and limited to the near surface (<10 nm). Similar trends were observed among all alloys (Pd, PdAg, PdCu), and the foils were restored to full performance with an Ar + sputter clean. The potential for helium plasma exposure to impact MFP performance under these conditions has not been previously reported, and these findings have significant implications to the design and implementation of practical DIR systems.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1988

Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

Kachare, R.↗
DOE OSTI2023

Deep and Shallow Gap States in Reduced and n-Type Doped m -ZrO 2

Monoclinic zirconium dioxide (m-ZrO 2 ) is a wide-band-gap functional oxide with many applications. Understanding the role of intrinsic defects and dopants is important for improving the properties of m-ZrO 2 relevant to its applications. In this work, we characterize the electronic states and energy levels of oxygen vacancies (VO’s) and n-type Nb, Ta, Rb, H, and F dopants in the bulk and at the majority (1̅11) surface of m-ZrO 2 , using accurate dielectric-dependent hybrid functional calculations. Our results show that VO’s generally behave as deep donors with the excess electrons localized at the vacant O sites in the form of F centers, in agreement with previous studies. In contrast, surface VO’s at two-fold coordinated oxygen sites show a rather shallow (1+/0) transition level. Shallow levels are also obtained for adsorbed hydrogen (H ads ) and fluorine substituting an oxygen atom (FO) either in the bulk or at the surface, whereas Nb and Ta form deep levels. Altogether, our results suggest that FO is the best candidate for realizing n-type conductivity in bulk m-ZrO 2 , while surface VO’s and Hads provide an efficient way to control the surface chemistry of m-ZrO 2 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Nucleation and growth of voids in shock loaded copper bicrystals

Understanding the evolution of damage and deformation due to spall at grain boundaries can provide a basis for connecting micro- to macroscale failure behavior in metals under extreme conditions. Copper bicrystal samples were shock loaded using flyer-plate impacts in a light gas gun with shock stresses ranging from 3 to 6 GPa. Pulse duration as well as crystal orientation along the shock direction were varied for a fixed boundary misorientation to determine their effects on void nucleation and coalescence. Samples were soft recovered and cross-sectioned to characterize damage using electron backscattering diffraction and scanning electron microscopy to gather information on damage characteristics at and around the GB, with emphasis on growth of boundary and bulk voids. Chemistry and composition analysis were also performed on samples to determine if trace elements present in a sample affected the threshold for void nucleation. Results show that the kinetics of damage growth at the boundary are strongly affected by stress level and impurities. It was found that the boundary selected had a similar or even lower tendency to show damage than the bulk at low pulse durations and amplitudes. As pulse duration and amplitude increased damage localized at the boundary, which was found to consist of many small voids, indicating that the boundary experienced rapid void nucleation and coalescence. Furthermore, the presence of impurities correlated strongly with scatter on damage evolution.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Zn acceptors in β-Ga 2 O 3 crystals

Electron paramagnetic resonance (EPR) is used to identify and characterize neutral zinc acceptors in Zn-doped β-Ga 2 O 3 crystals. Two EPR spectra are observed at low temperatures, one from Zn ions at tetrahedral Ga(1) sites (the $Zn$$^{0}_{Ga 1}$ acceptor) and one from Zn ions at octahedral Ga(2) sites (the $Zn$$^{0}_{Ga 2}$ acceptor). These Zn acceptors are small polarons, with the unpaired spin localized in each case on a threefold coordinated oxygen O(I) ion adjacent to the Zn ion. Resolved hyperfine interactions with neighboring 69 Ga and 71 Ga nuclei allow the EPR spectra from the two acceptors to be easily distinguished: $Zn$$^{0}_{Ga 1}$ acceptors interact equally with two Ga(2) ions and $Zn$$^{0}_{Ga 2}$ acceptors interact unequally with a Ga(1) ion and a Ga(2) ion. The as-grown crystals are compensated, with the Zn ions initially present as singly ionized acceptors ($Zn$$^{-}_{Ga 1}$ and $Zn$$^{-}_{Ga 2}$). Exposing a crystal to 325 nm laser light, while being held at 140 K, primarily produces neutral $Zn$$^{0}_{Ga 2}$ acceptors when photoinduced holes are trapped at $Zn$$^{-}_{Ga 2}$ acceptors. This suggests that there may be significantly more Zn ions at Ga(2) sites than at Ga(1) sites. Warming the crystal briefly to room temperature, after removing the light, destroys the EPR spectrum from the shallower $Zn$$^{0}_{Ga 2}$ acceptors and produces the EPR spectrum from the more stable $Zn$$^{0}_{Ga 1}$ acceptors. Furthermore, the $Zn$$^{0}_{Ga 2}$ acceptors decay in the 240–260 K region with a thermal activation energy near 0.65 eV, similar to $Mg$$^{0}_{Ga 2}$ acceptors, whereas the slightly deeper $Zn$$^{0}_{Ga 1}$ acceptors decay close to room temperature with an approximate thermal activation energy of 0.78 eV.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Overview and status of the Long-Baseline Neutrino Facility Far Site cryogenics system

The Sanford Underground Research Facility (SURF) will host the Far Detector of the Deep Underground Neutrino Experiment (DUNE), an international multi-kiloton Long-Baseline neutrino experiment that will be installed about one and a half kilometers underground in Lead, SD. Detectors will be located inside four cryostats filled with almost 70,000 metric tons of ultrapure liquid argon, with a level of impurities lower than 100 parts per trillion of oxygen equivalent contamination. The cryogenics infrastructure supporting this experiment is provided by the Long-Baseline Neutrino Facility (LBNF). This contribution presents modes of operation, layout, and main features of the LBNF Far Site cryogenic system, which is composed of three subsystems: Infrastructure, Proximity, and Internal cryogenics. The Infrastructure cryogenics supports the needs of the cryostat and Proximity cryogenics. It includes the equipment to receive the argon in liquid phase, vaporize it and transfer it underground as a gas, the nitrogen system (composed of the refrigeration system, liquid nitrogen buffer tanks and liquid and gaseous nitrogen distribution), liquid and gaseous argon distribution and process controls. The Proximity cryogenics receives fluids from the Infrastructure cryogenics and delivers them to the Internal cryogenics at the required temperature, pressure, purity and mass flow rate. It includes the argon condensers, liquid and gaseous argon purification and regeneration systems, nitrogen and argon phase separators, piping, valves, and instrumentation. The Internal cryogenics comprises the liquid and gaseous argon distribution inside the cryostats for the commissioning, cool down, fill, and steady state operations of the cryostats and detectors. An international engineering team is designing these systems and will manufacture, install, commission, and qualify them. This contribution describes the main features, performance, functional requirements, and modes of operation of the LBNF Far Site cryogenics system. It also presents the status of the design, along with present and future needs to support the DUNE experiment.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Overview and Status of the Long-Baseline Neutrino Facility Far Detectors Cryogenics System

The Sanford Underground Research Facility (SURF) will host the Far Detectors of the Deep Underground Neutrino Experiment (DUNE), an international multi-kiloton Long-Baseline neutrino experiment that will be installed about a mile underground in Lead, SD. Detectors will be located inside four cryostats filled with almost 70,000 metric tons of ultrapure liquid argon, with a level of impurities lower than 100 parts per trillion of oxygen equivalent. The cryogenics infrastructure supporting this experiment is provided by the Long- Baseline Neutrino Facility (LBNF). This contribution presents modes of operation, layout and main features of the LBNF Far Detectors cryogenics system, which is composed of the following subsystems: argon receiving facilities, nitrogen system, argon distribution system, argon purification and regeneration systems, argon circulation system, argon condensers system, internal cryogenics, miscellaneous items, and process controls. An international engin eering tea m is designing these systems and will manufacture, install, test, commission, and qualify them. This contribution describes the main features, performance, functional requirements, and modes of operation of the LBNF Far Detectors cryogenics system. It also presents the status of the design, along with present and future needs to support the DUNE experiment.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2026

Cost Competitive Process of Battery Grade Oxides Preparation from Aged LIBs

The increasing demand for lithium-ion batteries (LIBs) is driving development of advanced recycling and refining methods. In this project, new cathode active materials are prepared from recycled lithium battery materials and subsequently electrochemically evaluated in coin cells. In detail, scrap LIBs were mechanically processed into a metal rich black mass, then reductive acid leached into an aqueous metal solution, and finally high-purity metal hydroxide precursor materials were prepared by selective electrochemical flow precipitation. Closed-loop LIB recycling into active electrode materials will enable US manufacturers to break their reliance on foreign sources of critical materials. For example, electroextraction process used here has potential to significantly reduce chemical & water use as well as waste production as compared to traditional metallurgic techniques. To this end, electroextracted materials refined from used batteries were collected and processed to be tested as precursor cathode active material (pCAM). For this project, two samples of high purity recycled NMC hydroxide (~1 kg each) were received from N th Cycle’s Ohio demonstration facility. The NMC compositions of the two materials are similar, and the levels of impurities have been confirmed. Indeed, impurities like copper, boron and sodium are present in quantities that could negatively impact battery performance. However, some studies have demonstrated that the control of the quantity of elements like copper or boron may improve the electrochemistry properties of Lithium-NMC batteries. The principal objective is to determine the electrochemical performance of these 2 NMC hydroxide batches and clearly determine the effect of the impurities on the performance.

25 ENERGY STORAGE↗
DOE OSTI2025

Noble Liquid Test Facility at Fermilab

The Noble Liquid Test Facility (NLTF) at Fermilab is a liquid argon detector R\&D facility open to the national and international HEP community. The facility consists of 4 permanent cryostats, ranging from 250L up to 3000L, open space for small open dewar testing, and an optical test stand facility capable of measuring the optical properties of materials and characterizing photon detectors. NLTF’s strongest advantage is its capability to provide ultra-pure LAr in a reliable manner. Its inline filters are capable of filtering all of the three biggest contaminants for standard LAr detectors, O$_2$ and H$_2$O down to $< 1$ppb and N$_2$ $< 1$ppm. This is critical for the users of the test stands as small levels of impurities can dramatically change the efficiency of LArTPCs for the collection of charge and light. The smallest cryostat is mainly used for material testing, a service provided to the international HEP community interested in understanding how the introduction of a specific material might affect the electron lifetime in LAr. The test stands can be equipped with a purity monitor, which allows measuring the electron lifetime in real time, as well as gas sampling and analyzing, and in the near future, local recirculation and filtering. The facility has hosted many successful R\&D projects, which have published their results in well-known journals and talks. A few examples of such projects are: NIR light production in LAr and GAr, the characterization of VUV metalenses, the testing of new filter media capable of filtering N$_2$ from LAr, high voltage studies and direct charge amplification in LAr, and various doping studies.

Blaszczyk, Flor María [Fermilab]↗
NASA NTRS1978

High-purity silicon for solar cell applications

The article discusses the production of solar cells from high-purity silicon. The process consists of reducing the level of impurities in the raw materials, preventing material contamination before and after entering the furnace, and performing orders-of-magnitude reduction of metal impurity concentrations. The high-purity raw materials are considered with reference to carbon reductants, silica, and graphite electrodes. Attention is also given to smelting experiments used to demonstrate, in an experimental-scale furnace, the production of high-purity SoG-Si. It is found that high-purity silicon may be produced from high-purity quartz and chemically purified charcoal in a 50-kVA arc furnace. The major contamination source is shown to be impurities from the carbon reducing materials.

Dosaj, V. D.↗
NASA NTRS1978

Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process, task 2. LSSA project

The results of emission spectroscopic analysis indicate that molten silicon can remain in contact with hot-pressed Si3N4 (99.2 percent theoretical density) for prolonged periods without attaining the impurity content level of the nitride. Although MgO was used as binder, Mg was not found present in the silicon sessile drop in quantities much above the level initially present in the silicon source material. Preliminary experiments with EFG-type dies coated with CVD Si3N4 or CVD SiOxNy indicate that capillary rise does not occur readily in these dies. The same was found to be true of hot-pressed and reaction-sintered Si3N4 obtained commercially. However, when dies were formed by depositing CVD layers on shaped silicon slabs, a column of molten silicon was maintained in each CVD die while being heated in contact with a crucible of molten silicon. Preliminary wetting of dies appears necessary for EFG growth. Several ribbon growth experiments were performed from V-shaped dies.

Duffy, M. T.↗
NASA NTRS1983

Pellet Feed for Dendritic-Web Growth

Melt replenishment system sustains continuous growth of silicon dentritic web for several days. Substantially increases size of batch, limited mainly by level of impurities and life of crucible. Silicon pellets automatically added to crucible sustain crystal growth for days.

Duncan, C. S.↗
NASA NTRS1981

Nitridation of silicon

Silicon powders with three levels of impurities, principally Fe, were sintered in He or H2. Non-densifying mechanisms of material transport were dominant in all cases. High purity Si showed coarsening in He while particle growth was suppressed in H2. Lower purity powder coarsened in both He and H2. The same three Si powders and Si /111/ single crystal wafers were nitrided in both N2 and N2/H2 atmospheres. Hydrogen increased the degree of nitridation of all three powders and the alpha/beta ratio of the lower purity powder. Some Si3N4 whiskers and open channels through the surface nitride layer were observed in the presence of Fe, correlating with the nitridation-enhancing effects of Fe. Thermodynamic calculations showed that when SiO2 is present on the Si, addition of H2 to the nitriding atmosphere decreases the amount of SiO2 and increases the partial pressure of Si-containing vapor species, that is, Si and SiO. Large amounts of NH3 and SiH4 were also predicted to form.

Shaw, N. J.↗
NASA NTRS1991

Development of a proton-exchange membrane electrochemical reclaimed water post-treatment system

A single-cell electrochemical reactor that utilizes a proton exchange membrane (PEM) as a solid electrolyte is being investigated for posttreatment of reclaimed waste waters with low or negligible electrolyte content. Posttreatment is a final 'polishing' of reclaimed waste waters prior to reuse, and involves removing organic impurities at levels as high as 100 ppm to below 500 ppb total organic carbon (TOC) content to provide disinfection. The system does not utilize or produce either expendable hardware components or chemicals and has no moving parts. Test data and kinetic analysis are presented. The feasibility and application for water reclamation processes in controlled ecological environments (e.g., lunar/Mars habitats) are also presented. Test results show that the electrochemical single cell reactor provides effective posttreatment.

Kaba, Lamine↗
NASA NTRS2000

Statistically Reliable 'Atomistic' Simulation of Sub 100 nm MOSFETs

A 3D 'atomistic' simulation technique to study random impurity induced threshold voltage lowering and fluctuations in sub 0. 1 micron MOSFETs is presented. It allows statistical analysis of random impurity effects down to the individual impurity level-Efficient algorithms based on a single solution of Poisson's equation, followed by the solution of a simplified current continuity equation are used in the simulations.

Asenov, Asen↗