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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Effect of Graphene Addition on Shape Memory Behavior of Epoxy Resins

Shape memory polymers (SMPs) and composites are a special class of smart materials known for their ability to change size and shape upon exposure to an external stimulus (e.g. light, heat, pH, or magnetic field). These materials are commonly used for biomedical applications; however, recent attempts have been made towards developing SMPs and composites for use in aircraft and space applications. Implementing SMPs and composites to create a shape change effect in some aircraft structures could potentially reduce drag, decrease fuel consumption, and improve engine performance. This paper discusses the development of suitable materials to use in morphing aircraft structures. Thermally responsive epoxy SMPs and nanocomposites were developed and the shape memory behavior and thermo-mechanical properties were studied. Overall, preliminary results from dynamic mechanical analysis (DMA) showed that thermally actuated shape memory epoxies and nanocomposites possessed Tgs near approximately 168 C. When graphene nanofiller was added, the storage modulus and crosslinking density decreased. On the other hand, the addition of graphene enhanced the recovery behavior of the shape memory nanocomposites. It was assumed that the addition of graphene improved shape memory recovery by reducing the crosslinking density and increasing the elasticity of the nanocomposites.

Williams, Tiffany↗
NASA NTRS2010

Comparative Analysis of the Effects of Severe Plastic Deformation and Thermomechanical Training on the Functional Stability of Ti50.5Ni24.5Pd25 High-Temperature Shape Memory Alloy

We compare the effectiveness of a conventional thermomechanical training procedure and severe plastic deformation via equal channel angular extrusion to achieve improved functional stability in a Ti50.5Ni24.5Pd25 high-temperature shape memory alloy. Thermomechanical testing indicates that both methods result in enhanced shape memory characteristics, such as reduced irrecoverable strain and thermal hysteresis. The mechanisms responsible for the improvements are discussed in light of microstructural findings from transmission electron microscopy.

Atli, K. C.↗
NASA NTRS1987

Electronic implementation of associative memory based on neural network models

An electronic embodiment of a neural network based associative memory in the form of a binary connection matrix is described. The nature of false memory errors, their effect on the information storage capacity of binary connection matrix memories, and a novel technique to eliminate such errors with the help of asymmetrical extra connections are discussed. The stability of the matrix memory system incorporating a unique local inhibition scheme is analyzed in terms of local minimization of an energy function. The memory's stability, dynamic behavior, and recall capability are investigated using a 32-'neuron' electronic neural network memory with a 1024-programmable binary connection matrix.

Moopenn, A.↗
NASA NTRS2014

Assessment of Shape Memory Alloys - From Atoms To Actuators - Via In Situ Neutron Diffraction

As shape memory alloys (SMAs) become an established actuator technology, it is important to identify the fundamental mechanisms responsible for their performance by understanding microstructure performance relationships from processing to final form. Yet, microstructural examination of SMAs at stress and temperature is often a challenge since structural changes occur with stress and temperature and microstructures cannot be preserved through quenching or after stress removal, as would be the case for conventional materials. One solution to this dilemma is in situ neutron diffraction, which has been applied to the investigation of SMAs and has offered a unique approach to reveal the fundamental micromechanics and microstructural aspects of bulk SMAs in a non-destructive setting. Through this technique, it is possible to directly correlate the micromechanical responses (e.g., internal residual stresses, lattice strains), microstructural evolutions (e.g., texture, defects) and phase transformation properties (e.g., phase fractions, kinetics) to the macroscopic actuator behavior. In this work, in situ neutron diffraction was systematically employed to evaluate the deformation and transformation behavior of SMAs under typical actuator conditions. Austenite and martensite phases, yield behavior, variant selection and transformation temperatures were characterized for a polycrystalline NiTi (49.9 at. Ni). As the alloy transforms under thermomechanical loading, the measured textures and lattice plane-level variations were directly related to the cyclic actuation-strain characteristics and the dimensional instability (strain ratcheting) commonly observed in this alloy. The effect of training on the shape memory characteristics of the alloy and the development of two-way shape memory effect (TWSME) were also assessed. The final conversion from a material to a useful actuator, typically termed shape setting, was also investigated in situ during constrained heatingcooling and subsequent shape recovery experiments. Neutron diffraction techniques are also being applied to the investigation of novel high temperature SMAs with the objective of designing alloys with better stability, higher transition temperatures and ultimately superior durability.

Shape Memory Alloys↗
NASA NTRS1991

Demagnetization effects on forward and reverse thresholds of M-R memory elements

A refinement in the way hard-axis demagnetizing effects are treated in multilayer M-R memory elements brings experimental and calculated results into agreement for both the forward and reverse switching thresholds. In the improved model, the nonuniform rotation of the magnetization in the elements because of edge pinning is taken into account. The demagnetizing fields are treated as corrections to the hard-axis word field rather than an addition to the anisotropy constant.

Pohm, A. V.↗
NASA NTRS2016

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.

NAND flash memory↗
NASA NTRS1991

Memory implications of the spin-value effect in soft multilayers

New multilayer permalloy materials with thin separation layers that have significantly increased M-R coefficients at room temperature have the potential for substantially increasing both the speed and density of M-R memories. An analysis in the following discussion shows that the bit density at a given performance level is related to the product of M-R response and sheet resistivity when operating at the current-density limit. With a doubling of both sheet resistivity and M-R response over existing materials, the bit area can be reduced by about a factor of 4. Alternatively, if the bit area is kept the same, signal output is increased by a factor of 4 and circuit time constants can be reduced by a factor of 16.

Pohm, A. V.↗
NASA NTRS2003

Mitigating Upsets in SRAM-Based FPGAs from the Xilinx Virtex 2 Family

Static random access memory (SRAM) upset rates in field programmable gate arrays (FPGAs) from the Xilinx Virtex 2 family have been tested for radiation effects on configuration memory, block RAM and the power-on-reset (POR) and SelectMAP single event functional interrupts (SEFIs). Dynamic testing has shown the effectiveness and value of Triple Module Redundancy (TMR) and partial reconfiguration when used in conjunction. Continuing dynamic testing for more complex designs and other Virtex 2 capabilities (i.e., I/O standards, digital clock managers (DCM), etc.) is scheduled.

SEE testing↗
NASA NTRS1988

Shape memory alloys: New materials for future engineering

Shape memory is a new material property. An alloy which experiences relative severe plastic deformation resumes its original shape again after heating by 10 to 100 C. Besides simple shape memory, in similar alloys there is the second effect where the change in shape is caused exclusively by little temperature change. In pseudo-elasticity, the alloy exhibits a rubber-like behavior, i.e., large, reversible deformation at little change in tension. Beta Cu and beta NiTi alloys have been used in practice. The probability is that soon alloys based on Fe will become available. Recently increasing applications for this alloy were found in various areas of technology, even medical technology. A review with 24 references is given, including properties, production, applications and fundamental principles of the shape memory effect.

Hornbogen, E.↗
NASA NTRS2016

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate.

Single Event Effects (SEE)↗
NASA NTRS1979

Cosmic ray-induced soft errors in static MOS memory cells

Previous analytical models were extended to predict cosmic ray-induced soft error rates in static MOS memory devices. The effect is due to ionization and can be introduced by high energy, heavy ion components of the galactic environment. The results indicate that the sensitivity of memory cells is directly related to the density of the particular MOS technology which determines the node capacitance values. Hence, CMOS is less sensitive than e.g., PMOS. In addition, static MOS memory cells are less sensitive than dynamic ones due to differences in the mechanisms of storing bits. The flip-flop of a static cell is inherently stable against cosmic ray-induced bit flips. Predicted error rates on a CMOS RAM and a PMOS shift register are in general agreement with previous spacecraft flight data.

Sivo, L. L.↗
NASA NTRS1972

Viscel: A general purpose computer program for analysis of linear viscoelastic structures, volume 2

The VISCEL program is a general purpose computer program developed for equilibrium analysis of linear viscoelastic structures. The program is written in FORTRAN 5 language to operate on the Univac 1108 computer under the EXEC 8 operating system. The program, an extension of the linear equilibrium problem solver ELAS, is an updated and extended version of its earlier form written for the IBM 7094 computer. Finite element matrix displacement approach coupled with the synchronized material property concept, utilizing incremental time steps, was adopted for the solution presented. The step-by-step procedure involves solution of recursive equations in the time domain, which takes into account the memory of material properties. Incremental and accumulative displacements and stresses are obtained at the end of each time step. In order to minimize the extent of computations resulting from accumulative effects of material memory, the program provides an option which enables the employment of constant time steps in the logarithmic scale. Program documentation is presented.

Gupta, K. K.↗
NASA NTRS2017

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory

We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode. The 3D NAND showed significantly reduced SEU susceptibility in single-level-cell (SLC) storage mode. Additionally, the 3D NAND showed less multiple-bit upset susceptibility than the planar NAND, with fewer number of upset bits per byte and smaller cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the Micron 16 nm planar NAND, which suggests that typical heavy ion test fluences will underestimate the upset rate during a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.

3D NAND Flash memory; radiation susceptibility; si↗