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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

High purity low dislocation GaAs single crystals

Recent advances in GaAs bulk crystal growth using the LEC (liquid encapsulated Czochralski) technique are described. The dependence of the background impurity concentration and the dislocation density distribution on the materials synthesis and growth conditions were investigated. Background impurity concentrations as low as 4 x 10 to the 15th power were observed in undoped LEC GaAs. The dislocation density in selected regions of individual ingots was very low, below the 3000 cm .3000/sq cm threshold. The average dislocation density over a large annular ring on the wafers fell below the 10000/sq cm level for 3 inch diameter ingots. The diameter control during the program advanced to a diameter variation along a 3 inch ingot less than 2 mm.

Chen, R. T.↗
NASA NTRS1984

Growing Single Crystals From Low-Purity Silicon

Heat exchanger method continuously moves impurities to outside of growth interface. Silicon heated in crucible to above melting point, and melted silicon then solidified by extracting heat from bottom of crucible by means of heat exchanger.

Schmid, F.↗
NASA NTRS1982

Bread board float zone experiment system for high purity silicon

A breadboard float zone experimental system has been established at Westech Systems for use by NASA in the float zone experimental area. A used zoner of suitable size and flexibility was acquired and installed with the necessary utilities. Repairs, alignments and modifications were made to provide for dislocation free zoning of silicon. The zoner is capable of studying process parameters used in growing silicon in gravity and is flexible to allow trying of new features that will test concepts of zoning in microgravity. Characterizing the state of the art molten zones of a growing silicon crystal will establish the data base against which improvements of zoning in gravity or growing in microgravity can be compared. 25 mm diameter was chosen as the reference size, since growth in microgravity will be at that diameter or smaller for about the next 6 years. Dislocation free crystals were growtn in the 100 and 111 orientations, using a wide set of growth conditions. The zone shape at one set of conditions was measured, by simultaneously aluminum doping and freezing the zone, lengthwise slabbing and delineating by etching. The whole set of crystals, grown under various conditions, were slabbed, polished and striation etched, revealing the growth interface shape and the periodic and aperiodic natures of the striations.

Kern, E. L.↗
NASA NTRS1983

High purity, low dislocation GaAs single crystals

Liquid encapsulated Czochralski crystal growth techniques for producing undoped, high resistivity, low dislocation material suitable for device applications is described. Technique development resulted in reduction of dislocation densities in 3 inch GaAs crystals. Control over the melt stoichiometry was determined to be of critical importance for the reduction of twinning and polycrystallinity during growth.

Chen, R. T.↗
NASA NTRS1983

Preliminary study of a radiantly heated fluidized bed for the production of high purity silicon

The preparation of very pure silicon from silane (SIH4) using radiant heating of the hot silicon particles of a fluidized bed is discussed. The fraction of electrical energy supplied to the heater which is actually absorbed by the particles and the heat transfer coefficient between the hot bed and the cool distributor plate were investigated. The experimental design is presented and the results of the study are summarized.

Levenspiel, O.↗
NASA NTRS1986

Containerless high purity pulling process and apparatus for glass fiber

Apparatus and method for pulling optical glass fibers in a containerless environment is disclosed which includes a single axis acoustical levitation furnace in which a specimen is levitated and melted. A reflector unit is carried in the interior of the furnace and includes a reflector disposed centrally about the acoustical axis of the levitator. The reflector unit includes a circular shroud of insulation and a copper sleeve inserted in the unit which is hollow at for receiving a cooling medium. A fiber pulling bore is formed centrally in the reflector unit surrounded by cooling jacket to enhance solidification and formation of a fiber. A starting fiber strand is introduced into the melt and pulled outwardly through bore whereby the specimen fiber is started and formed as pulled therethrough. In order to replenish the melt and thus enable a continous process, a movable secondary reflector is provided which captures a supplemental specimen pellet and by movement of the reflector transfers it to the melt.

Naumann, R. J.↗
NASA NTRS1985

High-purity silicon crystal growth investigations

The study of silicon sheet material requirements for high efficiency solar cells is reported. Research continued on obtaining long lifetime single crystal float zone silicon and on understanding and reducing the mechanisms that limit the achievement of long lifetimes. The mechanisms studied are impurities, thermal history, point defects, and surface effect. The lifetime related crystallographic defects are characterized by X-ray topography and electron beam induced current.

Ciszek, T. F.↗
NASA NTRS1985

Turbulent flow model for vapor collection efficiency of a high-purity silicon reactor

In this study a mathematical model and a computer code based on this model was developed to allow prediction of the product distribution in chemical reactors for converting gaseous silicon compounds to condensed-phase silicon. Specifically, the model formulated describes the silicon vapor separation/collection from the developing turbulent flow stream within reactors of the Westinghouse type. Migration of the silicon vapor to the reactor walls was described by the parametric solutions presented here, in order to reduce the experimentation necessary in the design of such reactors. Calculations relating to the collection efficiencies of such reactors are presented as a function of the reactor throughflow and distance along its length.

Srivastava, R.↗
NASA NTRS1987

Phase purity of NiCo2O4, a catalyst candidate for electrolysis of water

NiCo2O4 is shown to be difficult to obtain as a pure phase, and may never have been so obtained. High resolution x-ray diffractometry is required for its precise characterization. Film XRD is not likely to show the asymmetry in the spinel diffraction lines, caused by poorly crystallized NiO, as seen in diffractometer traces. The Co3O4 which is expected to accompany NiO as an impurity in NiCo2O4 syntheses has the same diffraction pattern as the binary oxide. Firings of the co-precipitated hydroxides at 300, 350, and 400 C, including one in pure O2, failed to produce single phase cobaltate. Scanning electron microscopy showed all the sintered products to range over several orders of magnitude in agglomerate/particle size. Surface areas by BET were all in the range 40 to 110 m sq/g, equivalent to particles of 200 to 100 Angstrom diameter. The spinel diffraction line breadths were compatible with those approximate dimensions.

Singer, J.↗
NASA NTRS1986

Development in tunable solid state lasers with high spectral purity, high efficiency and long lifetime for differential absorption lidar

The paper presents a review of tunable vibronic solid state lasers for DIAL measurements and provides new experimental results for tunable Ti:sapphire lasers, materials development, and spectral bandwidth narrowing through injection control. Pulsed injection control of a Ti:sapphire laser with a 2.5-pm narrow band pulsed dye laser and with another Ti:sapphire laser is demonstrated with nearly complete energy extraction, indicating homogeneous line broadening. The status of tunable solid state lasers in the 1.6-2.3 micron range for DIAL measurements of trace gases, and development trends for lasers with reduced cryogenic cooling needs, are included. The effects of laser gain on optical damage, energy extraction, and amplified spontaneous emission are indicated for several tunable lasers.

Hess, R. V.↗
NASA NTRS1988

Oxygen transport through high-purity, large-grain Ag

The permeability of oxygen through pure, large-grain Ag membrames has been found to be linear and repeatable over the 400-800 C range, but only at a magnitude that is a factor of 3.2 smaller than ascribed by prior research. AES data indicate the pertinence of grain-boundary considerations, due to the virtual undetectability of intragranular oxygen. Vacuum-desorption of oxygen-saturated Ag is found to occur at the critical temperature of 630 C; this is consistent with the increased mobility of oxygen atoms in the higher temperature regime.

Outlaw, R. A.↗
NASA NTRS1994

Ultra high purity, dimensionally stable INVAR 36

An INVAR 36 material having long-term dimensional stability is produced by sintering a blend of powders of nickel and iron under pressure in an inert atmosphere to form an alloy containing less than 0.01 parts of carbon and less than 0.1 part aggregate and preferably 0.01 part individually of Mn, Si, P, S and Al impurities. The sintered alloy is heat treated and slowly and uniformly cooled to form a material having a coefficient of thermal expansion of less than 1 ppm/C and a temporal stability of less than 1 ppm/year.

Sokolowski, Witold M.↗
NASA NTRS1995

The control of purity and stoichiometry of compound semiconductors by high vapor pressure transport

In this report we summarize the results of a three year research program on high pressure vapor transport (HPVT) of compound semiconductors. Most of our work focused onto pnictides, in particular ZnGeP2, as a model system. Access to single crystals of well controlled composition of this material is desired for advancing the understanding and control of its point defect chemistry in the contest of remote, real-time sensing of trace impurities, e.g., greenhouse gases, in the atmosphere by ZnGeP2 optical parametric oscillators (OPO's).

Bachmann, Klaus J.↗
NASA NTRS1995

Ultra high purity, dimensionally stable INVAR 36

An INVAR 36 material having long-term dimensional stability is produced by sintering a blend of powders of nickel and iron under pressure in an inert atmosphere to form an alloy containing less than 0.01 parts of carbon and less than 0.1 part aggregate and preferably 0.01 part individually of Mn, Si, P, S and Al impurities. The sintered alloy is heat treated and slowly and uniformly cooled to form a material having a coefficient of thermal expansion of less than 1 ppm/C and a temporal stability of less than 1 ppm/year.

Sokolowski, Witold M.↗