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Electron density and temperature in inviscid flow and nozzle-wall boundary layer, measured with constant bias-voltage and swept-voltage RAM probes
Electron density and signal attenuation data from RAM C hypersonic reentries and theoretical calculations
Atomization, drop size, and penetration data are presented for cross stream water injection at conditions simulating high altitude reentry (low Weber number, high static temperature, high Knudsen number, and low static pressure). These results are applied to the RAM C-1 and C-3 flights. Two primary breakup modes are considered, vapor pressure or flashing and aerodynamic atomization. Results are given for breakup boundaries and mean drop size for each of these atomization mechanisms. Both standard and flight orifice geometries are investigated. The data were obtained in both a static environment and in conventional aerodynamic facilities at Mach numbers of 4.5 and 8. The high temperature aspects of reentry were simulated in a Mach 5.5 cyanogen-oxygen tunnel with total temperature of 4500 K.
A test program was conducted to evaluate the altitude relight capabilities of a short-length, double-annular, ram-induction combustor which was designed for Mach 3 cruise operation. The use of distorted inlet-air flow profiles was tried to evaluate their effect on the relight performance. No significant improvement in altitude relight performance was obtained with this approach. A study was also made to determine the effects of the reference Mach number, the fuel temperature, and the fuel volatility (ASTM-A1 against JP-4) on the altitude relight performance. Decreasing the reference Mach number, increasing the fuel temperature, and using more volatile fuel all decrease the combustor pressure necessary for relight.
An exhaust emission survey was conducted on a double-annular ram induction combustor at simulated ground idle conditions. The combustor was designed for a large augmented turbofan engine capable of sustained flight speeds up to Mach 3.0. The emission levels of total hydrocarbon (THC), carbon monoxide, carbon dioxide, and nitric oxide were measured. The effects of fuel zoning, fuel nozzle design, and operating conditions (inlet temperature and reference Mach number) on the level of these emissions were determined. At an overall combustor fuel/air ratio of 0.007, fuel zoning reduced THC emissions by a factor of 5 to 1. The reduction in THC emissions is attributed to the increase in local fuel/air ratio provided by the fuel zoning. An alternative method of increasing fuel/air ratio would be to operate with larger-than-normal compressor overboard bleed; however, analysis on this method indicated an increase in idle fuel consumption of 20 percent. The use of air-atomizing nozzles reduced the THC emissions by 2 to 1.
A concept for plug nozzles cooled by inlet ram air is presented. Experimental data obtained with a small scale model, 21.59-cm (8.5-in.) diameter, in a static altitude facility demonstrated high thrust performance and excellent pumping characteristics. Tests were made at nozzle pressure ratios simulating supersonic cruise and takeoff conditions. Effect of plug size, outer shroud length, and varying amounts of secondary flow were investigated.
Results of tensile, shear, fatigue and accelerated weathering tests are presented for the ram fastener, a reusable, single unit blind rivet. The effects of variations in hole size, grip length and sheet thickness on strength properties of the fastener were determined. The test results show these fasteners to have strength characteristics suitable for light structural applications. Exposure to accelerated weathering did not impair their performance.
Experimental data were obtained with a 21.59 cm (8.5 in.) diameter cold-flow model in a static altitude facility to determine the thrust and pumping characteristics of several variations of a ram-air-cooled plug nozzle. Tests were conducted over a range of nozzle pressure ratios simulating supersonic cruise and takeoff conditions. Primary throat area was also varied to simulate afterburner on and off. Effect of plug size, outer shroud length, primary nozzle geometry, and varying amounts of secondary flow were investigated. At a supersonic cruise pressure ratio of 27, nozzle efficiencies were 99.7 percent for the best configurations.
The digital filtering algorithm of W. D. Little, which employs a large RAM to obtain high speed, is implemented in a simple hardware configuration. The nonrecursive version of this filter is compared to the counting digital filter and found to be competitive for low-order filters up to order 7 (8 coefficients).
A concept for containing the shock inputs due to hydrodynamic ram caused by an impacting projectile within a fuel cell is discussed. This is to provide a buffering layer of foam, flexible, rigid or a combination thereof, which is sealed from the liquid. A program is described in which this buffering concept was tested. The effectiveness of a novel muzzle-mounted, 'tumble', test device is shown.
Several types of CMOS static random access memories (RAMs) have been tested in a cyclotron for susceptibility to single event upsets and latchup such as might occur in earth orbit or interplanetary space. No upsets have been observed for neutron fluences of 10 to the 11th n/sq cm and higher or proton fluences of 10 to the 9th protons/sq cm.
A model has been developed which predicts the relative susceptibility of bipolar RAMs to heavy ion and proton upset. During the course of evaluating this model, physical and electrical variations were also evaluated indicating that the minimum internal signal level is the primary upset susceptibility indicator. Unfortunately, all of the physical and electrical variations expected during a normal product development cycle are in direct opposition to improved high-energy particle upset tolerance. Hence, a trade-off between highly susceptible, low power (medium speed) devices must be made against the less susceptible, higher power (high speed) equivalent device, taking into account the systems trade-off with respect to system power, software, error correction procedures and/or circuit redundancy.
A significant number of spacecraft operational anomalies are believed to be associated with cosmic-ray-induced soft errors in the LSI memories. Test programs using a cyclotron to simulate cosmic rays have established conclusively that many common commercial memory types are vulnerable to heavy-ion upset. A description is given of the methodology and the results of a detailed analysis for predicting the bit-error rate in an assumed space environment for CMOS memory devices. Results are presented for three types of commercially available CMOS 1,024-bit RAMs. It was found that the HM6508 is susceptible to single-ion induced latchup from argon and krypton ions. The HS6508 and HS6508RH and the CDP1821 apparently are not susceptible to single-ion induced latchup.
Upset thresholds for bulk CMOS and CMOS/SOS RAMS were deduced after bombardment of the devices with 140 MeV Kr, 160 MeV Ar, and 33 MeV O beams in a cyclotron. The trials were performed to test prototype devices intended for space applications, to relate feature size to the critical upset charge, and to check the validity of computer simulation models. The tests were run on 4 and 1 K memory cells with 6 transistors, in either hardened or unhardened configurations. The upset cross sections were calculated to determine the critical charge for upset from the soft errors observed in the irradiated cells. Computer simulations of the critical charge were found to deviate from the experimentally observed variation of the critical charge as the square of the feature size. Modeled values of series resistors decoupling the inverter pairs of memory cells showed that above some minimum resistance value a small increase in resistance produces a large increase in the critical charge, which the experimental data showed to be of questionable validity unless the value is made dependent on the maximum allowed read-write time.
Dynamic random-access-memory (RAM) data delay and storage unit developed to insure data received from satellite is stored and not lost when satellite is not within range of ground station. Stores 256K of serial data, with independent read and write capability.
The first measurement of single event upset (SEU) for complementary GaAs static RAMs caused by heavy ions is reported. Upset cross-sections of the circuits for 28 MeV oxygen ions are reported as well as the linear energy transfer (LET) threshold established by using 170 MeV oxygen ions at various angles of beam incidence.
Simulation technique saves testing. Uses interactive version of SPICE (Simulation Program with Integrated Circuit Emphasis). Device and subcircuit models available in software used to construct macromodel for an integrated bipolar transistor. Time-dependent current generators placed inside transistor macromodel to simulate charge collection from ion track. Significant finding of experiments is standard design practice of reducing power in unaddressed bipolar RAM cell increases sensitivity of cell to single-event upsets.
Single-Event Upset (SEU) response of a bipolar low-power Schottky-diode-clamped TTL static RAM has been observed using Br ions in the 100-240 MeV energy range and O ions in the 20-100 MeV range. These data complete the experimental verification of circuit-simulation SEU modeling for this device. The threshold for onset of SEU has been observed by the variation of energy, ion species and angle of incidence. The results obtained from the computer circuit-simulation modeling and experimental model verification demonstrate a viable methodology for modeling SEU in bipolar integrated circuits.