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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

RF MEMS Switches with SiC Microbridges for Improved Reliability

Radio frequency (RF) microelectromechanical (MEMS) switches offer superior performance when compared to the traditional semiconductor devices such as PIN diodes or GaAs transistors. MEMS switches have a return loss (RL) better than -25 dB, negligible insertion loss (IL), isolation better than -30 dB, and near zero power consumption. However, RF MEMS switches have several drawbacks the most serious being long-term reliability. The ability for the switch to operate for millions or even billions of cycles is a major concern and must be addressed. MEMS switches are basically grouped in two categories, capacitive and metal-to-metal contact. The capacitive type switch consists of a movable metal bridge spanning a fixed electrode and separated by a narrow air gap and thin insulating material. The metal-to-metal contact type utilizes the same basic design but without the insulating material. After prolonged operation the metal bridges, in most of these switches, begin to sag and eventually fail to actuate. For the metal-to-metal type, the two metal layers may actually fuse together. Also if the switches are not packaged properly or protected from the environment moisture may build up and cause stiction between the top and bottom electrodes rendering them useless. Many MEMS switch designs have been developed and most illustrate fairly good RF characteristics. Nevertheless very few have demonstrated both great RF performance and ability to perform millions/billions of switching cycles. Of these, nearly all are of metal-to-metal type so as the frequency increases RF performance decreases.

Scardelletti, Maximilian C.↗
NASA NTRS2018

Reliability Concerns for Flying SiC Power MOSFETs in Space

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.

silicon carbide↗
NASA NTRS2005

Hybrid Power Management

An engineering discipline denoted as hybrid power management (HPM) has emerged from continuing efforts to increase energy efficiency and reliability of hybrid power systems. HPM is oriented toward integration of diverse electric energy-generating, energy-storing, and energy-consuming devices in optimal configurations for both terrestrial and outer-space applications. The basic concepts of HPM are potentially applicable at power levels ranging from nanowatts to megawatts. Potential applications include terrestrial power-generation, terrestrial transportation, biotechnology, and outer-space power systems. Instances of this discipline at prior stages of development were reported (though not explicitly labeled as HPM) in three prior NASA Tech Briefs articles: "Ultracapacitors Store Energy in a Hybrid Electric Vehicle"(LEW-16876), Vol. 24, No. 4 (April 2000), page 63; "Photovoltaic Power Station With Ultracapacitors for Storage" (LEW-17177), Vol. 27, No. 8 (August 2003), page 38; and "Flasher Powered by Photovoltaic Cells and Ultracapacitors" (LEW-17246), Vol. 24, No. 10 (October 2003), page 37. As the titles of the cited articles indicate, the use of ultracapacitors as energy-storage devices lies at the heart of HPM. An ultracapacitor is an electrochemical energy-storage device, but unlike in a conventional rechargeable electrochemical cell or battery, chemical reactions do not take place during operation. Instead, energy is stored electrostatically at an electrode/electrolyte interface. The capacitance per unit volume of an ultracapacitor is much greater than that of a conventional capacitor because its electrodes have much greater surface area per unit volume and the separation between the electrodes is much smaller. Power-control circuits for ultracapacitors can be simpler than those for batteries, for two reasons: (1) Because of the absence of chemical reactions, charge and discharge currents can be greater than those in batteries, limited only by the electrical resistances of conductors; and (2) whereas the charge level of a battery depends on voltage, temperature, age, and load condition, the charge level of an ultracapacitor, like that of a conventional capacitor, depends only on voltage.

Eichenberg, Dennis↗
NASA NTRS2012

Hardware for Accelerating N-Modular Redundant Systems for High-Reliability Computing

A hardware unit has been designed that reduces the cost, in terms of performance and power consumption, for implementing N-modular redundancy (NMR) in a multiprocessor device. The innovation monitors transactions to memory, and calculates a form of sumcheck on-the-fly, thereby relieving the processors of calculating the sumcheck in software

Dobbs, Carl, Sr.↗
NASA NTRS1985

Optimization of SIS mixer elements

Superconductor-Insulator-Superconductor (SIS) quantum mixers provide an approach to millimeter wave mixing - potentially offering conversion gain, a low local oscillator power demand, and potential mixer noise temperatures near the quantum limit. The development of a reliable fabrication technology for producing such high quality SIS devices for mixer applications in radio astronomy is the focus of the work.

Mattauch, Robert J.↗
NASA NTRS2008

1KW Power Transmission Using Wireless Acoustic-Electric Feed-Through (WAEF)

A variety of space applications require the delivery of power into sealed structures. Since the structural integrity can be degraded by holes for cabling we present an alternative method of delivering power and information using stress waves to the internal space of a sealed structure. One particular application of this technology is in sample return missions where it is critical to preserve the sample integrity and to prevent earth contamination. Therefore, the container has to be hermetically sealed and the integrity of the seal must be monitored in order to insure to a high degree of reliability the integrity of the sample return vessel. In this study we investigated the use of piezoelectric acoustic-electric power feed-through devices to transfer electric power wirelessly through a solid wall by using elastic or acoustic waves. The technology is applicable to a range of space and terrestrial applications where power is required by electronic equipment inside sealed containers, vacuum or pressure vessels, etc., where holes in the wall are prohibitive or may result in significant structural performance degradation or unnecessarily complex designs. To meet requirements of higher power applications, the feasibility to transfer kilowatts level power was investigated. Pre-stressed longitudinal piezoelectric feed-through devices were analyzed by finite element models and an equivalent circuit model was developed to predict the power transfer characteristics to different electric loads. Based on the results of the analysis a prototype device was designed, fabricated and a demonstration of the transmission of electric power up to 1.068-kW was successfully conducted. Efficiencies in the 80-90% range were also demonstrated and methods to increase the efficiency further are currently being considered.

pressure vessels↗
NASA NTRS2018

New Runtime Record Set for Free-Piston Stirling Machine

This article describes the recent progress GRC has made in the arena of long-life heat engines for power conversion. NASA has been interested in Stirling-cycle machines for power conversion since the 1970s. At that time, it was recognized that such a device could be designed to achieve long-life continuous operation with high reliability, by leveraging the free-piston configuration in favor of a kinematic engine. The free-piston variant eliminates the wear mechanisms associated with rolling-element bearings, piston rings, and connecting rods, typically found in kinematic Stirling engine designs. By restricting the moving components to linear motion only, there is no need to convert linear piston movement to rotating motion. With this, the moving components can be suspended within their cylinders by non-contacting bearings and seals can be effected with close clearances, also non-contacting. The use of a linear alternator attached directly to the piston enables direct conversion of heat, to mechanical, then to electrical energy, all in one hermetically sealed vessel, The electrical output only requires simple feedthroughs, and the complexity of sealed a rotating crankshaft is eliminated. In the free-piston variant, the displacer-to-piston phase is not implemented by a connection to a common rotating shaft. Instead, the pressure wave itself is used to drive the displacer. The displacer is designed to have a higher natural frequency of motion than the piston, which achieves a leading phase angle required for power production. The free-piston Stirling behaves like a spring-mass-damper system, with a forcing function created by the alternate heater and cooling of the working gas, and damping provided by the current flowing through the linear alternator. Two types of non-contacting bearings are available to designers: flexure and gas bearings. Flexure bearings consist of a spiral-cut disc of metal that has high radial stiffness but a deliberately engineering stiffness in the axial direction, to permit piston and displacer resonant motion. Gas bearings utilize a pressure source and precisely machined flow channels to provide a radial stiffness around the moving component. The pressure source can be supplied by the engine's pressure wave itself.

Oriti, Salvatore M.↗
NASA NTRS1977

Compact reliable multiaxis pivot

Triple-axis pivot-arm wrist developed for wrist joint for remote-manipulator arm allows three degrees of freedom in wrist joint. Device also contains power-chain components sufficient for 15 foot/pound torque. Device could be used with prosthetics.

Johnston, J. D.↗
NASA NTRS2003

Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x < 500 mW) applications. Although the electrical characteristics of RF MEMS switches far surpass any existing technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

Jah, Muzar↗
NASA NTRS2012

Beam Steering Devices Reduce Payload Weight

Scientists have long been able to shift the direction of a laser beam, steering it toward a target, but often the strength and focus of the light is altered. For precision applications, where the quality of the beam cannot be compromised, scientists have typically turned to mechanical steering methods, redirecting the source of the beam by swinging the entire laser apparatus toward the target. Just as the mechanical methods used for turning cars has evolved into simpler, lighter, power steering methods, so has the means by which researchers can direct lasers. Some of the typical contraptions used to redirect lasers are large and bulky, relying on steering gimbals pivoted, rotating supports to shift the device toward its intended target. These devices, some as large and awkward as a piece of heavy luggage, are subject to the same issues confronted by mechanical parts: Components rub, wear out, and get stuck. The poor reliability and bulk not to mention the power requirements to run one of the machines have made mechanical beam steering components less than ideal for use in applications where weight, bulk, and maneuverability are prime concerns, such as on an unmanned aerial vehicle (UAV) or a microscope. The solution to developing reliable, lighter weight, nonmechanical steering methods to replace the hefty steering boxes was to think outside the box, and a NASA research partner did just that by developing a new beam steering method that bends and redirects the beam, as opposed to shifting the entire apparatus. The benefits include lower power requirements, a smaller footprint, reduced weight, and better control and flexibility in steering capabilities. Such benefits are realized without sacrificing aperture size, efficiency, or scanning range, and can be applied to myriad uses: propulsion systems, structures, radiation protection systems, and landing systems.

Source record↗
NASA NTRS2014

5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).

Toftul, Alexandra↗
NASA NTRS2001

Terahertz-Regime, Micro-VEDs: Evaluation of Micromachined TWT Conceptual Designs

Summary form only given. The Terahertz (THz) region of the electromagnetic spectrum (approx.300-3000 GHz) has enormous potential for high-data-rate communications, spectroscopy, astronomy, space research, medicine, biology, surveillance, remote sensing, industrial process control, etc. The most critical roadblock to full exploitation of the THz band is lack of coherent radiation sources that are powerful (0.01-10.0 W continuous wave), efficient (>1 %), frequency agile (instantaneously tunable over 1% bandwidths or more), reliable, and relatively inexpensive. Micro-machined Vacuum Electron Devices (micro-VEDs) represent a promising solution. We describe prospects for miniature, THz-regime TWTs fabricated using micromachining techniques. Several approx.600 GHz conceptual designs are compared. Their expected performance has been analyzed using SD, 2.51), and 3D TWT codes. A folded waveguide (FWG) TWT forward-wave amplifier design is presented based on a Northrop Grumman (NGC) optimized design procedure. This conceptual device is compared to the simulated performance of a novel, micro-VED helix TWT. Conceptual FWG TWT backward-wave amplifiers and oscillators are also discussed. A scaled (100 GHz) FWG TWT operating at a relatively low voltage (-12 kV) is under development at NGC. Also, actual-size micromachining experiments are planned to evaluate the feasibility of arrays of micro-VED TWTs. Progress and results of these efforts are described. This work was supported, in part by AFOSR, ONR, and NSF.

Booske, John H.↗
NASA NTRS1982

Power Supply Unit

The Cuk DC to DC Switching Converter was developed by Caltech Professors, Slobodan Cuk and R. D. Middlebrook. The converter changes unsuitable dc voltage into one or more voltages suitable for powering electronic equipment; it can also be used in converting dc current to ac and vice versa. It was named one of the 100 most significant technical advances of 1979. The Cuk converter is more efficient than previous conversion devices, simpler, smaller, lighter, cheaper and highly reliable. The first application of the technology is in the Compucorp 685 word/data processor, manufactured by Compucorp. NASA waived title rights; Caltech granted exclusive license to the inventors, who in turn, transferred their rights to a company they founded called TESLA Company, which sublicenses the converter design and related technology to companies making power supplies for use in their own products.

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NASA NTRS1987

Optically controlled microwave devices and circuits: Emerging applications in space communications systems

Optical control of microwave devices and circuits by an optical fiber has the potential to simplify signal distribution networks in high frequency communications systems. The optical response of two terminal and three terminal (GaAs MESFET, HEMT, PBT) microwave devices are compared and several schemes for controlling such devices by modulated optical signals examined. Monolithic integration of optical and microwave functions on a single semiconductor substrate is considered to provide low power, low loss, and reliable digital and analog optical links for signal distribution.

Bhasin, Kul B.↗
NASA NTRS1990

Galileo spacecraft power management and distribution system

The Galileo PMAD (power management and distribution system) is described, and the design drivers that established the final as-built hardware are discussed. The spacecraft is powered by two general-purpose heat-source-radioisotope thermoelectric generators. Power bus regulation is provided by a shunt regulator. Galileo PMAD distributes a 570-W beginning of mission (BOM) power source to a user complement of some 137 load elements. Extensive use of pyrotechnics requires two pyro switching subassemblies. They initiate 148 squibs which operate the 47 pyro devices on the spacecraft. Detection and correction of faults in the Galileo PMAD is an autonomous feature dictated by requirements for long life and reliability in the absence of ground-based support. Volatile computer memories in the spacecraft command and data system and attitude control system require a continuous source of backup power during all anticipated power bus fault scenarios. Power for the Jupiter Probe is conditioned, isolated, and controlled by a Probe interface subassembly. Flight performance of the spacecraft and the PMAD has been successful to date, with no major anomalies.

Detwiler, R. C.↗
NASA NTRS1998

Low Level Leaks

NASA has transferred the improved portable leak detector technology to UE Systems, Inc.. This instrument was developed to detect leaks in fluid systems of critical launch and ground support equipment. This system incorporates innovative electronic circuitry, improved transducers, collecting horns, and contact sensors that provide a much higher degree of reliability, sensitivity and versatility over previously used systems. Potential commercial uses are pipelines, underground utilities, air-conditioning systems, petrochemical systems, aerospace, power transmission lines and medical devices.

Source record↗
NASA NTRS2003

Thin-film Solar Cells for Space Applications

The proposed work supports MURED goals by fostering research and development activities at Fisk and UTEP which contribute substantially to NASA's mission, preparing faculty and students at Fisk and UTEP to successfully participate in the conventional, competitive research and education process, and increasing the number of students to successfully complete degrees in NASA related fields. The project also addresses directly a core need of NASA for space power and is consistent with the Core Responsibilities of the John Glenn Space Center. Current orbital missions are limited by radiation from high energy particles trapped in the Van Allen Belt because that solar radiation degrades cell performance by damaging the crystalline lattice. Some potential orbits have been inaccessible because the radiation is too severe. Thin-film solar cells, if they can be adapted for use in the unfriendly space environment, could open new orbits to satellites by providing a radiation hard source of power. The manned mission to Mars requires photovoltaic devices for both the trip there and as a power supply on the surface. Solar arrays using thin films offer a low power/weight ratio solution that provides reliable photovoltaic power.

Lush, Gregory B.↗
NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

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