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This presentation provides an overview of single event effects in FPGA devices 2015-2016 including commercial Xilinx V5 heavy ion accelerated testing, Xilinx Kintex-7 heavy ion accelerated testing. Mitigation study, and investigation of various types of triple modular redundancy (TMR) for commercial SRAM based FPGAs.
We present the challenges that arise when using redundant clock domains due to their clock-skew. Heavy-ion radiation data show that a singular clock domain (DTMR) provides an improved TMR methodology for SRAM-based FPGAs over redundant clocks.
Flash technology is being utilized in fuzed munition applications and, based on the development of digital logic devices in the commercial world, usage of flash technology will increase. Digital devices of interest to designers include flash-based microcontrollers and field programmable gate arrays (FPGAs). Almost a decade ago, a study was undertaken to determine if flash-based microcontrollers could be safely used in fuzes and, if so, how should such devices be applied. The results were documented in the Technical Manual for the Use of Logic Devices in Safety Features. This paper will first review the Technical Manual and discuss the rationale behind the suggested architectures for microcontrollers and a brief review of the concern about data retention in flash cells. An architectural feature in the microcontroller under study will be discussed and its use will show how to screen for weak or failed cells during manufacture, storage, or immediately prior to use. As was done for microcontrollers a decade ago, architectures for a flash-based FPGA will be discussed, showing how it can be safely used in fuzes. Additionally, architectures for using non-volatile (including flash-based) storage will be discussed for SRAM-based FPGAs.
This book of knowledge (BoK) provides a critical review of the benefits and difficulties associated with using proton irradiation as a means of exploring the radiation hardness of commercial-off-the-shelf (COTS) systems. This work was developed for the NASA Electronic Parts and Packaging (NEPP) Board Level Testing for the COTS task. The fundamental findings of this BoK are the following. The board-level test method can reduce the worst case estimate for a board's single-event effect (SEE) sensitivity compared to the case of no test data, but only by a factor of ten. The estimated worst case rate of failure for untested boards is about 0.1 SEE/board-day. By employing the use of protons with energies near or above 200 MeV, this rate can be safely reduced to 0.01 SEE/board-day, with only those SEEs with deep charge collection mechanisms rising this high. For general SEEs, such as static random-access memory (SRAM) upsets, single-event transients (SETs), single-event gate ruptures (SEGRs), and similar cases where the relevant charge collection depth is less than 10 μm, the worst case rate for SEE is below 0.001 SEE/board-day. Note that these bounds assume that no SEEs are observed during testing. When SEEs are observed during testing, the board-level test method can establish a reliable event rate in some orbits, though all established rates will be at or above 0.001 SEE/board-day. The board-level test approach we explore has picked up support as a radiation hardness assurance technique over the last twenty years. The approach originally was used to provide a very limited verification of the suitability of low cost assemblies to be used in the very benign environment of the International Space Station (ISS), in limited reliability applications. Recently the method has been gaining popularity as a way to establish a minimum level of SEE performance of systems that require somewhat higher reliability performance than previous applications. This sort of application of the method suggests a critical analysis of the method is in order. This is also of current consideration because the primary facility used for this type of work, the Indiana University Cyclotron Facility (IUCF) (also known as the Integrated Science and Technology (ISAT) hall), has closed permanently, and the future selection of alternate test facilities is critically important. This document reviews the main theoretical work on proton testing of assemblies over the last twenty years. It augments this with review of reported data generated from the method and other data that applies to the limitations of the proton board-level test approach. When protons are incident on a system for test they can produce spallation reactions. From these reactions, secondary particles with linear energy transfers (LETs) significantly higher than the incident protons can be produced. These secondary particles, together with the protons, can simulate a subset of the space environment for particles capable of inducing single event effects (SEEs). The proton board-level test approach has been used to bound SEE rates, establishing a maximum possible SEE rate that a test article may exhibit in space. This bound is not particularly useful in many cases because the bound is quite loose. We discuss the established limit that the proton board-level test approach leaves us with. The remaining possible SEE rates may be as high as one per ten years for most devices. The situation is actually more problematic for many SEE types with deep charge collection. In cases with these SEEs, the limits set by the proton board-level test can be on the order of one per 100 days. Because of the limited nature of the bounds established by proton testing alone, it is possible that tested devices will have actual SEE sensitivity that is very low (e.g., fewer than one event in 1 × 10(exp 4) years), but the test method will only be able to establish the limits indicated above. This BoK further examines other benefits of proton board-level testing besides hardness assurance. The primary alternate use is the injection of errors. Error injection, or fault injection, is something that is often done in a simulation environment. But the proton beam has the benefit of injecting the majority of actual SEEs without risk of something being missed, and without the risk of simulation artifacts misleading the SEE investigation.
Critical space applications require knowledge of single event upset (SEU) susceptibility (mission survivability). Generic SEU test and analysis techniques do not provide adequate data for survivability analysis. This presentation provides information on how to: (1) Investigate (test for) SEU susceptibilities of tactical (mission specific) designs that are implemented in a SRAM-based FPGA; and (2) Analyze SEU cross-sections for use in survivability prediction.
This work discusses mitigation selection and qualification techniques for Xilinx reconfigurable field programmable gate arrays (FPGAs). The aim of the paper is to provide readers with a better understanding of the engineering/reliability/project cost relationship that occurs when developing a mitigation strategy for static random access memory (SRAM)-based FPGAs.
Magnetoresistive Random Access Memory (MRAM) is much different from conventional types of memory like SRAM, DRAM, and Flash, where electric charge is used to store information. Instead of exploiting the charge of an electron, MRAM uses its spin to store data. This new type of electronics is known as “spintronics.” The primary focus of this report is the current generation of MRAM technology, and its reliability, vendors, and space-readiness.
A coherent Doppler lidar has been developed to address the need for a high-performance, compact, and cost-effective velocity and altitude sensor onboard landing vehicles. One of the core subsystems within NDL is its signal processing architecture. The primary function of this subsystem is to digitize the analog output of the homodyned signal received from the photo-diode associated with each telescope, process this signal in the frequency domain, and then turn this information into velocity and range measurements. A secondary function of this subsystem is to setup and control the internal components within NDL and to enable the instrument to interface with external systems by receiving commands, sending telemetry, and synchronizing its measurements with external clocks and pulses. This paper will give an overview of the signal processing architecture within NDL. This will include a discussion on its fundamental processing components and the core signal processing algorithms. Command, telemetry and internal component controls will also be discussed as will how the signal processing architecture has also evolved over the years of development. We will discuss provisions for robust operation including Triple-Mode Redundancy (TMR) within NDL’s Field Programmable Gate Array (FPGA) and storage elements, a fault-tolerant boot process, and Error Detection and Correction (EDAC) on the Static Random-Access Memories (SRAMs). Finally, we conclude this paper with how this architecture could continue to evolve.
ARM processors power a class of high-performance, lower power system on a chip devices. In the absence of radiation effects, these devices are highly desirable for space use. The processor core architecture for ARM devices is licensed to provide computing on multiple hardware platforms. The A5 processor is in a unique pioneering space for providing detailed radiation response data to explore the baseline performance of these devices. These data can help set options for ARM processors and possibly impact design choices for the next generation of ARM fault tolerance capabilities. The SAMA5D3 was tested to establish general SEE performance for a relatively simple implementation of the ARM A5 core. This testing observed SRAM sensitivity starting at an LET of about 3 MeV-cm2/mg, with a saturated cross section of about 2x10-8cm2/bit, and this was determined by both active write and read of the caches, in addition to the use of a debugger to provide test results. Crash/SEFI data was collected using both Linux and bare metal C-code. The onset LET for crashes was about LET 1.5 MeV-cm2/mg, with saturated cross sections of about 2x10-5 cm2 for bare metal (low utilization), and 2x10-4cm2 for Linux (high utilization) tests.
The purpose of this test was to characterize single event effects (SEE) in the LCMXO3D-9400HC-5BG484I, a low power and low density field programmable gate array (FPGA). The SEE concerns for the device that were investigated in this testing are single event upsets (SEUs) in the configuration static random-access memory (SRAM), SEUs in the FPGA fabric, single event latch up (SEL), and single event functional interrupts (SEFIs). Testing was conducted at Lawrence Berkeley National Laboratory (LBNL) on August 26th, 2024 and August 28th, 2024.
Charge collected by diffusion from ion tracks in a semiconductor substrate may be influenced by the substrate diffusion length, which is related to recombination losses. A theoretical analysis shows that, excluding some extreme cases, charge collection is insensitive to spatial variations in the diffusion length funciton, so it is possible to define an effective diffusion length having the property that collected charge can be approximated by assuming a uniform diffusion length equal to this effective value.
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Destructive single event effects (DSEE) are a main concern for pioneers attempting to use COTS (commercial-off-the-shelf) devices in space, so a COTS instrument full of such devices is particulary scary.
Single event functionality interrupt (SEFI) results are presented for Hynix SDRAMS. The SEFI response threshold is below LET 9.9 Mev-cm(exp 2)/mg and the saturated cross section is 6 x 10(exp -5)cm(exp 2). Dynamic SEFI identification was made, and in-situ recovery restored functionality. Verification results of the identification algorithm are presented. An observed high current radiation response is also presented.