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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

SiC Substrate Composition Effect on TGO Scale Growth in EBC Systems During High‐Temperature Steam Exposure

A systematic investigation was conducted on the oxidation behavior of silicon-bond coats within environmental barrier coating (EBC) systems applied to Si-carbide (SiC) substrates, aiming to understand how different underlying SiC substrates influence the bond coat's thermally grown oxide (TGO) and its properties. The study examined (Y/Yb) 2 Si 2 O 7 /Si coatings on three cost-effective surrogate SiC substrates (chemical vapor deposition [CVD]-grown β-SiC, sintered α-SiC, and reaction-bonded [RB] SiC) for SiC fiber /SiC matrix ceramic matrix composites (CMCs). Discrepancies in TGO growth were observed, with noticeably higher growth rates reported for the coated CMC specimens than for the four monolithic SiC specimens. The CMC samples produce an amorphous TGO, whereas the other monolithic substrates formed a crystalline TGO, which lowered the oxygen permeability through the SiO 2 scale. In conclusion, the vitrification of the TGO in the (Y/Yb) 2 Si 2 O 7 /Si/CMC system resulted from the migration of boron species from the CMC substrate to the SiO 2 scale, leading to network modification via boron doping.

EBC↗
DOE OSTI2026

Review of SiC material development for nuclear fusion applications: Cross-cutting research and emerging opportunities

The SiC-based materials, particularly SiC-fiber-reinforced SiC matrix (SiC/SiC) composites, show strong potential for structural and functional applications in future fusion power plants because they can operate at high temperatures with a range of coolants and breeders, thereby enabling higher energy conversion efficiency. Here, this paper presents recent advancements in the development of SiC-based materials, focusing on processing techniques and material performance and resistance under fusion-relevant environments. The processing activities have emphasized near-net-shape fabrication and the joining of SiC subcomponents, with processing methods and material compositions informed by previous irradiation experiments on various grades of SiC. Research on irradiation effects has remained focused on degradation mechanisms and the microstructural optimization of SiC/SiC composites irradiated to high neutron damage levels. Analysis of irradiation defects in SiC has advanced via the application of cutting-edge characterization methods, among which Raman spectroscopy is becoming a common tool to assess atomic-scale chemical disorder. Fusion–fission crosscutting irradiation research has explored combined effects in SiC/SiC composites with application-relevant geometries, including bowing of SiC/SiC composite channels under neutron flux gradients, stress evolution in SiC/SiC composite tubes under through-thickness temperature gradients, and irradiation-enhanced corrosion in SiC. Finally, research opportunities for component testing and assessment under fusion-relevant conditions, in support of emerging concepts from the private fusion sector, are discussed.

Advanced manufacturing↗
DOE OSTI2020

Mechanical and Thermophysical Properties of 3D-Printed SiC-FY20

In the Transformational Challenge Reactor (TCR), the fuel blocks consist of an additively-manufactured silicon carbide (SiC) matrix and uranium nitride tristructural isotropic (UN TRISO) fuel particles, which are stacked to form fuel columns. The SiC matrix is manufactured using binderjet 3D printing followed by loading the TRISO fuel particles and the chemical vapor infiltration (CVI) process. Because the fuel matrix is a primary component of the TCR core and its response to mechanical and thermal loads during operation is one of the most influential factors on the integrity of TCR core, testing and evaluation have focused on producing mechanical and thermophysical properties data for the binderjet/CVI SiC. Mechanical and thermophysical properties were measured from various types of specimens printed for two or three orientations, which included equibiaxial flexural failure strength, elastic constants, thermal diffusivity and conductivity, density, and the coefficient of thermal expansion. Flexural failure strength datasets showed similar Weibull distributions regardless of sample variants including different orientations. The mean failure strengths of the 3D-printed SiC variants were in the range of 286–306 MPa, which are 22–27% lower than that of the CVD SiC. Thermophysical test results showed that specific heat and thermal expansion are not sensitive to the build directions of SiC samples, while thermal diffusivity is highly dependent on the build direction and can be correlated to the anisotropic character of the 3D-printed SiC. This report also includes discussions on the uniaxial tensile properties of the as-printed SiC before CVI and on ongoing efforts for irradiation effects studies.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
NASA NTRS1996

Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)

Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.

Mitchell, Sharanda L.↗
NASA NTRS2000

Packaging Technology Developed for High-Temperature SiC Sensors and Electronics

A ceramic- and thick-film-materials-based prototype electronic package designed for silicon carbide (SiC) high-temperature sensors and electronics has been successfully tested at 500 C in an oxygen-containing air environment for 500 hours. This package was designed, fabricated, assembled, and electronically evaluated at the NASA Glenn Research Center at Lewis Field with an in-house-fabricated SiC semiconductor test chip. High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as space missions to the inner solar system or the emission control electronics and sensors in aeronautical engines. Single-crystal SiC has such excellent physical and chemical material properties that SiC-based semiconductor electronics can operate at temperatures over 600 C, which is significantly higher than the limit for Si-based semiconductor devices. SiC semiconductor chips were recently demonstrated to be operable at temperatures as high as 600 C, but only in the probe station environment because suitable packaging technology for sensors and electronics at temperatures of 500 C and beyond did not exist. Thus, packaging technology for SiC-based sensors and electronics is immediately needed for both application and commercialization of high-temperature SiC sensors and electronics. In response to this need, researchers at Glenn designed, fabricated, and assembled a prototype electronic package for high-temperature electronics, sensors, and microelectromechanical systems (MEMS) using aluminum nitride (AlN) substrate and gold (Au) thick-film materials. This prototype package successfully survived a soak test at 500 C in air for 500 hours. Packaging components tested included thick-film high-temperature metallization, internal wire bonds, external lead bonds, and a SiC diode chip die-attachment. Each test loop, which was composed of thick-film printed wire, wire bond, and lead bond was subjected to a 50-mA direct current for 250 hours at 500 C.

Chen, Liang-Yu↗
NASA NTRS2006

Modeling the Elastic Modulus of 2D Woven CVI SiC Composites

The use of fiber, interphase, CVI SiC minicomposites as structural elements for 2D-woven SiC fiber reinforced chemically vapor infiltrated (CVI) SiC matrix composites is demonstrated to be a viable approach to model the elastic modulus of these composite systems when tensile loaded in an orthogonal direction. The 0deg (loading direction) and 90deg (perpendicular to loading direction) oriented minicomposites as well as the open porosity and excess SiC associated with CVI SiC composites were all modeled as parallel elements using simple Rule of Mixtures techniques. Excellent agreement for a variety of 2D woven Hi-Nicalon(TradeMark) fiber-reinforced and Sylramic-iBN reinforced CVI SiC matrix composites that differed in numbers of plies, constituent content, thickness, density, and number of woven tows in either direction (i.e, balanced weaves versus unbalanced weaves) was achieved. It was found that elastic modulus was not only dependent on constituent content, but also the degree to which 90deg minicomposites carried load. This depended on the degree of interaction between 90deg and 0deg minicomposites which was quantified to some extent by composite density. The relationships developed here for elastic modulus only necessitated the knowledge of the fractional contents of fiber, interphase and CVI SiC as well as the tow size and shape. It was concluded that such relationships are fairly robust for orthogonally loaded 2D woven CVI SiC composite system and can be implemented by ceramic matrix composite component modelers and designers for modeling the local stiffness in simple or complex parts fabricated with variable constituent contents.

Morscher, Gregory N.↗
NASA NTRS1998

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗
NASA NTRS2004

Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas

This article describes the initial discovery and development of new approaches to SiC homoepitaxial and heteroepitaxial growth. These approaches are based upon the previously unanticipated ability to effectively supress two-dimensional nucleation of 3C-SiC on large basal plane terraces that form between growth steps when epitaxy is carried out on 4H- and 6H-SiC nearly on-axis substrates. After subdividing the growth surface into mesa regions, pure stepflow homoeptixay with no terrace nucleation was then used to grow all existing surface steps off the edges of screw-dislocation-free mesas, leaving behind perfectly on-axis (0001) basal plane mesa surfaces completely free of atomic-scale steps. Step-free mesa surfaces as large as 0.4 mm x 0.4 mm were experimentally realized, with the yield and size of step-free mesas being initally limited by substrate screw dislocations. Continued epitaxial growth following step-free surface formation leads to the formation of thin lateral cantilevers that extend the step-free surface area from the top edge of the mesa sidewalls. By selecting a proper pre-growth mesa shape and crystallographic orientation, the rate of cantilever growth can be greatly enhanced in a web growth process that has been used to (1) enlarge step-free surface areas and (2) overgrow and laterally relocate micropipes and screw dislocations. A new growth process, named step-free surface heteroepitaxy, has been developed to achieve 3C-SiC films on 4H- and 6H-SiC substrate mesas completely free of double positioning boundary and stacking fault defects. The process is based upon the controlled terrace nucleation and lateral expansion of a single island of 3C-SiC across a step-free mesa surface. Experimental results indicate that substrateepilayer lattice mismatch is at least partially relieved parallel to the interface without dislocations that undesirably thread through the thickness of the epilayer. These results should enable realization of improved SiC homojunction and heterojunction devices. In addition, these experiments offer important insights into the nature of polytypism during SiC crystal growth.

Neudeck, Philip G.↗
NASA NTRS2006

Recent Results from Epitaxial Growth on Step Free 4H-SiC Mesas

This paper updates recent progress made in growth, characterization, and understanding of high quality homoepitaxial and heteroepitaxial films grown on step-free 4H-SiC mesas. First, we report initial achievement of step-free 4H-SiC surfaces with carbon-face surface polarity. Next, we will describe further observations of how step-free 4H-SiC thin lateral cantilever evolution is significantly impacted by crystal faceting behavior that imposes non-uniform film thickness on cantilever undersides. Finally, recent investigations of in-plane lattice constant mismatch strain relief mechanisms observed for heteroepitaxial growth of 3C-SiC as well as 2H-AlN/GaN heterofilms on step-free 4H-SiC mesas will be reviewed. In both cases, the complete elimination of atomic heterointerface steps on the mesa structure enables uniquely well-ordered misfit dislocation arrays to form near the heterointerfaces with remarkable lack of dislocations threading vertically into the heteroepilayers. In the case of 3C-SiC heterofilms, it has been proposed that dislocation half-loops nucleate at mesa edges and glide laterally along the step-free 3C/4H interfaces. In contrast, 3C-SiC and 2H-AlN/GaN heterofilms grown on 4H-SiC mesas with steps exhibit highly disordered interface misfit dislocation structure coupled with 100X greater density of dislocations threading through the thickness of the heteroepilayers. These results indicate that the presence of steps at the heteroepitaxial interface (i.e., on the initial heteroepitaxial nucleation surface) plays a highly important role in the defect structure, quality, and relaxation mechanisms of single-crystal heteroepitaxial films.

Neudeck, Philip G.↗
DOE OSTI2021

Characterization of radiation damage in 3D printed SiC

The SiC fuel matrix for advanced gas-cooled high temperature reactors as part of the Transformational Challenge Reactor program serves as the fuel particle container structure, a barrier to fission gas release, and a heat transfer medium. Its performance is particularly important because the fuel matrix must demonstrate good structural stability and thermal behaviors. An additive manufacturing methodology combining a binder jet 3D printing process with chemical vapor infiltration (CVI) for the production of SiC was recently developed. In this study, post irradiation examination by transmission electron microscopy shows that defect accumulation within the printed particles is very similar to other forms of high-purity SiC. However, damage accumulation was not directly observed in the CVI matrix because black spot damage and dislocation loops are difficult to image within the nanoscale highly faulted CVI matrix and because interstitial defects may rapidly annihilate at the stacking faults. Therefore, electron energy loss spectroscopy (EELS) analysis was used to analyze defect swelling in both the printed particles and the CVI matrix. The EELS analysis helped reveal that the radiation-induced swelling in the CVI matrix is similar to that of the printed SiC particles. This work shows that 3D printed SiC has behavior that is comparable to SiC processed by other means and that 3D printing could serve as a suitable processing technique for high-purity SiC for nuclear applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Hermeticity of SiC/SiC composite and monolithic SiC tubes irradiated under radial high-heat flux

Demonstration of hermetic SiC fiber–reinforced SiC matrix composite cladding under normal operating environments has been identified as one of the most critical feasibility issues for accident-tolerant fuel cladding in light-water reactors. This study provides critical experimental data needed for understanding the effects of irradiation on hermeticity. SiC composite and monolithic tubes were neutron-irradiated to 2 displacements per atom with and without a nominal radial heat flux of 0.6 MW/m2 to produce a simulated in-pile stress state for the normal operation of a light-water reactor. The through-thickness temperature gradient under irradiation results in a gradient in swelling, which causes a significant stress buildup. Such irradiation-induced stress was modeled using a commercial finite element analysis code. The radial heat flux–irradiation synergism was experimentally investigated by constructing a special irradiation capsule and evaluating the helium hermeticity of the specimens. The simulated stress state exhibited a near equi-biaxial tensile axial and hoop stress of ~150 MPa at the inner surface of the SiC composite tube. This stress level is potentially beyond the matrix cracking stress. Degradation of hermeticity of the SiC composite tubes was observed after irradiation, indicating irradiation-induced cracking, whereas the irradiated monolithic SiC tubes remained hermetic. In conclusion, the results indicate that loss of hermeticity caused by radiation-induced microcracking is a potential issue for SiC composite cladding, depending on the magnitude of the temperature gradients. Coating the outer surface of the cladding was identified as a mitigation strategy that might overcome the cracking issue.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Thermo-Mechanical Modeling and Evaluation of the Cracking Response of Additively Manufactured Monolithic SiC Lattice Structures Subjected to Laser Heating

Increasing operating temperatures of solar receivers is paramount to the efficiency of concentrated solar thermal (CST) and solar power (CSP) systems. Owing to its high temperature stability combined with excellent thermal and optical properties, SiC has been the material of choice for application in high-temperature solar receivers. The state-of-the-art SiC volumetric concentrating solar air receivers such as honeycomb design have been demonstrated in field tests to achieve exit air temperatures approaching 800oC. However, successful application of CST systems for decarbonization requires significant increase in temperature capability of SiC receiver technology. Supported by an award from the Solar Technology Office (SETO), US Department of Energy (DOE), GE Research in collaboration with Heliogen Holdings Inc, is engaged in the development of ultra-High Operating Temperature SiC-matrix Solar Thermal Air Receiver (HOTSSTAR) enabled by additive manufacturing. The program objective is to design and to demonstrate a techno-economically viable SiC air receiver technology to achieve exit air temperature of 1100oC for CST applications. This report summarizes the learnings of a computational study on additively manufactured SiC lattice structures subjected to laser heating. The results from this study aim to help guide the design of a SiC receiver through a better understanding of lattice structure geometric parameters and their implications on the cracking response of the structure. In the study, a heat flux was applied to the surface of a 2”-diameter cylindrical lattice structure to simulate a 4kW CO2 laser. The resulting temperature distribution was applied to a structural model to approximate the stress distribution within the lattice structure and a Weibull analysis was performed to gain insight into the probability of failure and to evaluate the cracking response of the structure. With this approach, the influence of lattice density on temperature, stress, and probability of failure was explored for two different lattice beam spacings. A discussion on modeling assumptions, a comparison with experimental results, and an evaluation of the lattice cracking response is provided.

14 SOLAR ENERGY↗
DOE OSTI2020

$\mathrm{UPDATED}$ $\mathrm{U3SI2}$ thermal creep model and sensitivity analysis of the $\mathrm{U3SI2-SIC}$ accident tolerant $\mathrm{FUEL}$

U 3 Si 2 is a candidate accident tolerant fuel (ATF) replacement for UO 2 . U 3 Si 2 ’s high uranium density and high thermal conductivity are favorable properties in steady-state and accident conditions. Low power performance of this U3Si2-SiC concept fuel is compared to that of UO 2 -Zr4 fuels by implementing models that describe the properties of U 3 Si 2 and SiC-SiC into Idaho National Laboratory's (INL) fuel performance code, BISON. Included in these material models is a thermal creep model for U 3 Si 2 based on compressive creep data. The simulated results are in keeping with community knowledge that the U 3 Si 2 -SiC concept fuel may serve as a replacement for UO 2 -Zr4 fuels during steady-state operation, provided the mSiC layer remains under compression. Through a moderate power history and three 24-month fuel cycles, the mSiC layer remains under compressive stress through a burnup of 80 MWd/kgU. During low power operation, failure of the mSiC layer generally occurs prior to significant thermal creep in U 3 Si 2 . Generally, U 3 Si 2 creep is temperature sensitive and of little importance at the temperatures and stresses simulated during steady operation and during fuel-to-cladding contact. A parameter variation study including 11,520 individual simulations with variations in nominal fuel thermal creep rate, cladding thermal conductivity, cladding irradiation creep and swelling, cladding gap size, and cladding thickness demonstrated that research priorities for this ATF should revolve around reducing cladding thickness as a means to minimize cladding failure. Generally, despite advances in SiC-SiC compliance, the brittle nature of mSiC excludes U 3 Si 2 -SiC for use where fuel cladding contact may occur.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2021

Thermal diffusivity and thermal conductivity of SiC composite tubes: the effects of microstructure and irradiation

Cladding thermal conductivity is an important physical property in assessing the performance of silicon carbide (SiC)-cladded fuels for nuclear reactors. However, there is a significant lack of reliable data, particularly for irradiated materials, because the geometry complicates the measurement. This study investigates the thermal diffusivity of coupons with a curvature, machined from SiC fiber–reinforced SiC matrix composite tubes, with and without neutron irradiation under light water reactor–relevant temperature and dose conditions. The tested materials included full composite and duplex SiC composite tubes. The measurements were conducted using a modern flash diffusivity apparatus. The analyzed area on the specimen during diffusivity testing was reduced for improved measurement accuracy due to sample curvature. Post-irradiation measurements showed that the effects of neutron irradiation on thermal conductivity (e.g. thermal defect resistivity) are different between SiC composite plates versus tubes. The difference was explained by higher matrix density of the tube than the plate. This study provides reliable thermal properties of prototypic SiC composite tubes useful for fuel performance modeling of SiC-based cladding.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs

This paper evaluates the impact of the fast high gate-voltage screening technique on gate oxide reliability of commercial 1.2 kV 4H-SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) with planar and trench gate structures. The measurements are conducted on packaged devices with the intent that the results will be applicable to wafer-level screening. The threshold voltage (V th ) of SiC MOSFETs is measured before and after various screening treatments and recovery process. In addition, constant-voltage time-dependent dielectric breakdown (TDDB) measurements are performed on SiC MOSFETs to obtain the intrinsic lifetime of gate oxide. The objective of this study is to determine the optimal screening conditions and improve screening efficiency without degradation of gate oxide reliability, such as V th shift and reduced oxide intrinsic lifetime. Due to the differences in the gate oxidation process and structural design of SiC planar and trench MOSFETs, the two types of devices exhibit different oxide reliability in the screening process. The recommended screening conditions obtained in this paper reveal that SiC trench MOSFETs can accept higher screening voltages compared to SiC planar MOSFETs. Hence, it can be concluded that more efficient screening techniques can be adopted for SiC MOSFETs with thicker gate oxide to meet the requirements of industrial applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Micromechanical Properties of the SiC and Pyrolytic Carbon Layers in Tristructural-Isotropic Coated Particles

Tristructural isotropic (TRISO) coated particle fuel was initially developed for high temperature gas cooled reactors (HTGR) and has been proposed for several other advanced reactor concepts. The design of TRISO particles focuses on preventing the release of fission products in normal and off-normal reactor conditions. The particle design features an actinide bearing fuel kernel that is surrounded by three pyrolytic carbon (PyC) layers and a silicon carbide layer (SiC). The mechanical stability of the particle and fission product retention for both metallic and gaseous fission products depend on the SiC layer. Post irradiation examination (PIE) of TRISO fuel from the first two US DOE Advanced Gas Reactor Fuel Development and Qualification Program irradiation campaigns, AGR-1 and AGR-2, had identified a low rate of particles exhibiting cracking in the SiC layer that did not propagate across the SiC layer. While cracking in the SiC is rare for test conditions and particles associated with the AGR program, understanding the stress state and mechanical properties of the SiC and PyC layers related to particle architecture can aid predicting thermomechanical response of TRISO fuel under the prescribed operation envelope and beyond as well as aiding in the development of similar fuel concepts for other advanced reactors. The presented investigation shows the relationship of the mechanical properties and mechanical response (e.g., understanding crack propagation) of the SiC and PyC layers relative to position within the particle. Testing was conducted on the inner and outer PyC layers of TRISO particles to quantify differences in mechanical behavior.

Montoya, Katherine [ORNL] (ORCID:0000000326955086)↗
DOE OSTI2021

Status of the Optical Dilatometer Method of Evaluating the Peak Irradiation Temperatures of SiC Passive Monitors

The main objective of this project was to conduct a comparative assessment between the optical dilatometer method and resistivity method, using all 10 SiC temperature monitors provided by two Nuclear Science User Facility experiments: BSU-8242 and General Electric Hitachi. Unfortunately, due to multiple delays in acquiring, shipping, and cleaning the SiC temperature monitors, the project was only able to process one (1) SiC temperature monitor during this period. SiC temperature monitor KGT-3357 was evaluated via the optical dilatometer method to determine its peak irradiation temperature. The KGT-3357 sample was from the BSU-8242 experiment and designed for a temperature of 300°C and an exposure of 1 dpa. The optical dilatometer measurements indicated that the KGT-3357 SiC temperature monitor’s peak irradiation temperature range was 240–267°C, with sensitivity of approximately ±20°C. Additionally, this temperature range falls within the evaluated melt wire temperature range of 238.6–271.5 °C. The remaining six (6) SiC temperature monitors from the BSU-8242 experiment and three (3) from the General Electric Hitachi experiment will be used in the future work to further validate the optical dilatometer method for measuring SiC peak irradiation temperatures.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

A New Class of SiC Power MOSFETs with Record-Low Resistance

Silicon carbide (SiC) power transistors are used in the main traction inverter of electric vehicles (EVs). Tesla began installing SiC power MOSFETs in 2017, and has now produced 4.8 million EVs containing over 169 million SiC power MOSFETs. Looking ahead, the worldwide EV market is projected to exceed 50 million vehicles per year by 2030 (Reuters, Oct. 25, 2022). This will create a demand for over two billion SiC power MOSFETs per year. Our program aims to double the efficiency of today's commercial power MOSFETs. This will cut the number of MOSFETs per EV in half, reducing cost, simplifying assembly, decreasing weight, and increasing vehicle reliability through reduced parts count. Our approach is to apply innovative design and advanced processing to increase the density of current-controlling channels in SiC power MOSFET. We have developed two new MOSFET devices, each of which increases the channel density by a factor of six over today's best commercial MOSFETs. This required implementing new fabrication processes, creating new device designs, and integrating the processing steps and device designs into a manufacturable technology. In this project we have developed two innovative devices: (i) a novel three-dimensional structure, the "tri-gate MOSFET," and (ii) a deeply-scaled, fully self-aligned trench MOSFET, the "IMOSFET". Both products were experimentally demonstrated during this project and meet the program goals of increased efficiency relative to the current state-of-the art commercial products. In the process we have generated significant IP, with two US patents issued and three applications pending. We have also published three journal articles and given reports on this technology at seven international conferences. The success of this program has led to significant follow-on funding from industry. In May 2023 Purdue University signed a five-year R&D contract with GlobalFoundries to transfer our novel technology to commercial production. With headquarters in Malta, NY, Global Foundries is one of the largest pure-play silicon foundries in the world, with annual revenue of $\$$8.1B. Their SiC foundry will be built around the next-generation 200-mm diameter SiC wafers, which will double the number of die per wafer and reduce per-die production cost.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗