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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Design, fabrication, and delivery of a charge injection device as a stellar tracking device

Six 128 x 128 CID imagers fabricated on bulk silicon and with thin polysilicon upper-level electrodes were tested in a star tracking mode. Noise and spectral response were measured as a function of temperature over the range of +25 C to -40 C. Noise at 0 C and below was less than 40 rms carriers/pixel for all devices at an effective noise bandwidth of 150 Hz. Quantum yield for all devices averaged 40% from 0.4 to 1.0 microns with no measurable temperature dependence. Extrapolating from these performance parameters to those of a large (400 x 400) array and accounting for design and processing improvements, indicates that the larger array would show a further improvement in noise performance -- on the order of 25 carriers. A preliminary evaluation of the projected performance of the 400 x 400 array and a representative set of star sensor requirements indicates that the CID has excellent potential as a stellar tracking device.

Burke, H. K.↗
NASA NTRS1982

Visible charge-coupled device (CCD) focal plane design considerations for multispectral applications

The typical Multispectral Linear Array (MLA) Instrument mission would be to gather high-resolution, radiometrically accurate earth resources data in several spectral bands over a prolonged period of time. These bands would include the visible (VIS), near infrared (NIR) and short wavelength infrared. Silicon charge-coupled imaging devices (CCDs) can be assembled into contiguous pixel focal planes which will cover the VIS/NIR region and operate reliably for several years in a space environment. A typical MLA focal plane would have approximately 12,000 pixels, with a pixel-to-pixel registration requirement on the order of + or - 0.1 pixel. The technology to assemble such focal planes has been developed and is described. The problem of polarization sensitivity associated with certain types of focal plane assemblies is addressed. Radiation effects on CCDs are also discussed, and a practical solution to the problem through the use of shielding is described.

Sadowski, H.↗
NASA NTRS1984

Quantum efficiency measurements for several waveshifter coatings in the extreme vacuum ultraviolet

Quantum efficiency measurements are given for coronene and liumogen coatings designed to enhance UV sensitivity for silicon charge coupled device imaging detectors. Coatings on quartz and on UDT PIN 10DP photodiodes were tested. The wavelength range extended from 153.7 to 50.0 nm in the vacuum ultraviolet. Similar measurements were made for coronene, liumogen, and stilbene-3 laser dye films on quartz disks relative to sodium salicylate. Sodium salicylate and coronene are the most efficient waveshifters down to 50 nm so far observed. Coronene's fairly constant quantum efficiency over such a wide wavelength range into the far VUV makes it a useful waveshifter for UV and VUV applications.

Butner, C. L.↗
NASA NTRS1989

Real-time graphics for the Space Station Freedom cupola, developed in the Systems Engineering Simulator

Among the Lyndon B. Johnson Space Center's responsibilities for Space Station Freedom is the cupola. Attached to the resource node, the cupola is a windowed structure that will serve as the space station's secondary control center. From the cupola, operations involving the mobile service center and orbital maneuvering vehicle will be conducted. The Systems Engineering Simulator (SES), located in building 16, activated a real-time man-in-the-loop cupola simulator in November 1987. The SES cupola is an engineering tool with the flexibility to evolve in both hardware and software as the final cupola design matures. Two workstations are simulated with closed-circuit television monitors, rotational and translational hand controllers, programmable display pushbuttons, and graphics display with trackball and keyboard. The displays and controls of the SES cupola are driven by a Silicon Graphics Integrated Raster Imaging System (IRIS) 4D/70 GT computer. Through the use of an interactive display builder program, SES, cupola display pages consisting of two dimensional and three dimensional graphics are constructed. These display pages interact with the SES via the IRIS real-time graphics interface. The focus is on the real-time graphics interface applications software developed on the IRIS.

Red, Michael T.↗
NASA NTRS1993

Observations of upper atmospheric optical flashes recorded from an aircraft

Short-duration upper atmospheric optical flashes were recorded on the night of 8 July, 1993 (9 July UT) from the NASA DC-8 Airborne Laboratory flying over the American Midwest. All-sky video images from an intensified silicon intensified target (ISIT) camera revealed 19 upper atmospheric flashes occurring over a period of approximately 100 min. The flashes were similar in appearance to previously reported ground and shuttle-based video observations. Detailed analysis of 12 of the events yielded these parameters: (1) duration less than or equal to 17 ms; (2) brightness 10-50 kR, roughly that of bright aurorae; (3) terminal heights 30-100 km, with a mean of approximately 60 km; (4) horizontal extent 10-50 km; (5) emission volumes greater than 1000 cu km. The relative frequency of the optical flashes was (6) 1:200-1:400 compared to negative cloud-to-ground discharges and 1:20-1:40 compared to positive cloud-to-ground discharges.

Sentman, D. D.↗
NASA NTRS1995

The Yerkes Observatory 60-channel far infrared camera for the Kuiper Airborne Observatory

The Yerkes Observatory Far Infrared Camera employs a two-dimensional, 60-detector array of (3)He-cooled silicon bolometers for broadband imaging in the spectral range of 40 to 240 microns. Four interchangeable filters have effective wavelengths of 60, 100, 160, and 200 microns. Three interchangeable lens sets give pixel sizes of 17, 27, and 45 in. Signals are processed through nitrogen-temperature JFET source-follower amplifiers, warm preamplifiers, and digital signal processors, and the system is controlled through a graphical user interface on a Macintosh computer. The camera has been used to image a wide variety of galactic and extragalactic far infrared sources.

Harper, D. AL, Jr.↗
NASA NTRS1993

Observations of Upper Atmospheric Optical Flashes Recorded From an Aircraft

Short-duration upper atmospheric optical flashes were recorded on the night of 8 July, 1993 (9 July UT) from the NASA DC-8 Airborne Laboratory flying over the American Midwest. All-sky video images from an intensified silicon intensified target (ISIT) camera revealed 19 upper atmospheric flashes occurring over a period of approximately 100 min. The flashes were similar in appearance to previously reported ground and shuttle-based video observations. Detailed analysis of 12 of the events yielded these parameters: (1) duration less than or = 17 ms; (2) brightness 10-50 kR, roughly that of bright aurorae; (3) terminal heights 30-100 km, with a mean of approximately 60 km; (4) horizontal extent 10-50 km; and (5) emission volume greater than 1000 km(sup 3). The relative frequency of the optical flashes was (6) 1:200-1:400 compared to negative cloud-to-ground discharges and 1:20-1:40 compared to positive cloud-to-ground discharges.

Sentman, D. D.↗
NASA NTRS1996

Macular Preprocessing of Linear Acceleratory Stimuli: Implications for the Clinic

Three-dimensional reconstructions of innervation patterns in rat maculae were carried out using serial section images sent to a Silicon Graphics workstation from a transmission electron microscope. Contours were extracted from mosaicked sections, then registered and visualized using Biocomputation Center software. Purposes were to determine innervation patterns of type II cells and areas encompassed by vestibular afferent receptive fields. Terminals on type II cells typically are elongated and compartmentalized into parts varying in vesicular content; reciprocal and serial synapses are common. The terminals originate as processes of nearby calyces or from nerve fibers passing to calyces outside the immediate vicinity. Thus, receptive fields of the afferents overlap in unique ways. Multiple processes are frequent; from 4 to 6 afferents supply 12-16 terminals on a type II cell. Processes commonly communicate with two type II cells. The morphology indicates that extensive preprocessing of linear acceleratory stimuli occurs peripherally, as is true also of visual and olfactory systems. Clinically, this means that loss of individual nerve fibers may not be noticed behaviorally, due to redundancy (receptive field overlap). However, peripheral processing implies the presence of neuroactive agents whose loss can acutely or chronically alter normal peripheral function and cause balance disorders. (Platform presentation preferred - Theme 11)

Ross, M. D.↗
NASA NTRS1997

Characterization of Semiconductor Materials Using AOTF Instruments

A non-invasive characterization of silicon-on-insulator (SOI) wafers using white light interference measured by an AOTF polarimetric hyperspectral imaging instrument will be presented an an illustration of the technology potential. Experiments provided high resolution thickness maps of both silicon and oxide layers with accuracy and observed optically active imperfections and distributions in the structure.

polarimetric hyperspectral imaging silicon oxide↗
DOE OSTI2020

Toward ultrafast, ultra-stable imaging arrays: Superlattice doping to enhance the performance of backside-illuminated 3D-hybridized silicon photodetectors

In this paper, the authors report the latest results on their development of superlattice-doped, thinned, backside-illuminated (BSI), 3D-integrated photodiode detectors—a step toward their ultimate goal of demonstrating ultrafast, ultrastable CMOS imaging arrays. As with most silicon-based photodetectors, backside-illumination and backside surface passivation are keys to achieve the highest performance capability. The two-dimensional (2D) doping technique developed at the Jet Propulsion Laboratory (JPL) has proved to result in a highly efficient, highly stable detector response when combined with a variety of detectors. Here, JPL's 2D-doping has been combined with Sandia's BSI photodetectors hybridized with custom fanout wafer via copper Direct Bond Interconnect (DBI®), a technology that is rapidly becoming industry standard for BSI CMOS imaging arrays. The prototype detectors were packaged and evaluated with respect to their response to low energy electrons. The authors find that the responsivity of 2D-doped BSI detectors is higher than devices prepared using other surface passivation techniques (i.e., ion implantation). The success of the work described herein verifies that the 2D-doping processes previously developed for Sandia's frontside-illuminated photodetectors are generally applicable to BSI detectors and demonstrates for the first time that JPL's 2D-doping process is compatible with the Cu-DBI® technology.

Jewell, April D.↗
NASA NTRS1983

Meniscus Imaging for Crystal-Growth Control

Silicon crystal growth monitored by new video system reduces operator stress and improves conditions for observation and control of growing process. System optics produce greater magnification vertically than horizontally, so entire meniscus and melt is viewed with high resolution in both width and height dimensions.

Sachs, E. M.↗
NASA NTRS1982

Images of the future - Two decades in astronomy

Future instruments for the 100-10,000 A UV-wavelength region will require detectors with greater quantum efficiency, smaller picture elements, a greater wavelength range, and greater active area than those currently available. After assessing the development status and performance characteristics of vidicons, image tubes, electronographic cameras, digicons, silicon arrays and microchannel plate intensifiers presently employed by astronomical spacecraft, attention is given to such next-generation detectors as the Mosaicked Optical Self-scanned Array Imaging Camera, which consists of a photocathode deposited on the input side of a microchannel plate intensifier. The problems posed by the signal processing and data analysis requirements of the devices foreseen for the 21st century are noted.

Weistrop, D.↗
NASA NTRS2002

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Pain, Bedabrata↗
NASA NTRS2005

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Zheng, Xinyu↗
NASA NTRS1986

Increased sensitivity of a vidicon optical multichannel analyzer with a detachable electrostatic image intensifier

A substantial gain in sensitivity is reported through the addition of a commercially available electrostatic image intensifier to a silicon-intensified target vidicon system. This comparatively low cost modification allows cooled or room temperature operation, CW or pulsed detection, and ease of removal or attachment. A 40-mm, first-generation technology image intensifier was used in a configuration in which the photocathode end was at negative high voltage and the phosphor end was at ground. Cooling the vidicon detector did not result in improved SNR; more generally, a 50-fold sensitivity increase was observed for the image intensifier/vidicon system.

Snow, J. B.↗
DOE OSTI2025

Charge collection efficiency of diamond and silicon sensors irradiated with alpha particles

To evaluate the viability of using semiconductors as sensor materials in a detector for the Associated Particle Imaging technique, the radiation hardness of silicon and diamond diodes to alpha particles has been assessed. Here, the detector lifetimes for both silicon and diamond sensors were measured under the prolonged exposure to alpha particles emitted by an 241 Am source. The silicon detector was exposed to alpha radiation for approximately two months, reaching an accumulated fluence of ~ 1.5 x 10 12 α cm –2 . Additionally, by using a high purity single-crystal diamond with coplanar electrodes operating with full charge collection, the diamond detector response was measured over approximately ten months reaching an accumulated fluence of over 6 x 10 12 α cm –2 cm.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Structural and optical properties of nanoparticles formed by laser ablation of porous silicon in liquids: Perspectives in biophotonics

The paper discusses the possibility of manufacturing silicon nanoparticles, which are suitable for contrasting biological tissues imaged by optical coherence tomography, by femtosecond laser ablation of porous silicon in various liquids. The manufactured nanoparticles are characterised by average sizes of 87, 112, and 102 nm for cases of ablation in water, ethanol, and liquid nitrogen, respectively, as well as a relatively narrow size distribution, which provides additional advantages for subsequent delivery into biological tissues. Electrochemical etching, which results in the formation of layers of porous silicon, allows the yield of ablation products to be increased several-fold by lowering the ablation threshold, thereby increasing the light scattering efficiency of the prepared suspensions compared with the case of using crystalline silicon as targets. The possibility of obtaining high-contrast images of a biotissue phantom based on an agar gel with embedded nanoparticles is shown. The magnitude of the contrast depends on the liquid used for ablation and correlates with the values of the reduced scattering coefficient of the studied suspensions. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1999

Consequences of Atomic Oxygen Interaction With Silicone and Silicone Contamination on Surfaces in Low Earth Orbit

The exposure of silicones to atomic oxygen in low Earth orbit causes oxidation of the surface, resulting in conversion of silicone to silica. This chemical conversion increases the elastic modulus of the surface and initiates the development of a tensile strain. Ultimately, with sufficient exposure, tensile strain leads to cracking of the surface enabling the underlying unexposed silicone to be converted to silica resulting in additional depth and extent of cracking. The use of silicone coatings for the protection of materials from atomic oxygen attack is limited because of the eventual exposure of underlying unprotected polymeric material due to deep tensile stress cracking of the oxidized silicone. The use of moderate to high volatility silicones in low Earth orbit has resulted in a silicone contamination arrival at surfaces which are simultaneously being bombarded with atomic oxygen, thus leading to conversion of the silicone contaminant to silica. As a result of these processes, a gradual accumulation of contamination occurs leading to deposits which at times have been up to several microns thick (as in the case of a Mir solar array after 10 years in space). The contamination species typically consist of silicon, oxygen and carbon. which in the synergistic environment of atomic oxygen and UV radiation leads to increased solar absorptance and reduced solar transmittance. A comparison of the results of atomic oxygen interaction with silicones and silicone contamination will be presented based on the LDEF, EOIM-111, Offeq-3 spacecraft and Mir solar array in-space results. The design of a contamination pin-hole camera space experiment which uses atomic oxygen to produce an image of the sources of silicone contamination will also be presented.

Banks, Bruce A.↗