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Single-event effects testing (heavy-ion and proton) is presented for 96- and 176-layer commercially-available 3D NAND flash memory, with emphasis on SEFI detection and recovery.
Single-event effects testing (heavy-ion and proton) is presented for 96- and 176-layer commercially-available 3D NAND flash memory, with emphasis on SEFI detection and recovery.
This paper reports heavy ion, proton, and laser induced single event effects results for a variety of microelectronic devices targeted for possible use in NASA spacecrafts. The compendium covers devices tested within the years of 2010 through 2012.
Single-Event Effects (SEE) testing was conducted on the nVidia Jetson TX2 System on Chip (SOC). Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.
The JEDEC JESD57 test standard, Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation, is undergoing its first revision since 1996. This presentation will provide an overview of some of the key proposed updates to the document.
Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the test setup used to improve data quality and validate single-event latchup (SEL) protection circuitry.
Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the test setup used to improve data quality and validate single-event latch-up (SEL) protection circuitry.
Single-Event Effects (SEE) testing was conducted on the AMD Ryzen 3 1200 microprocessor. Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.
The results of recent Single Event Effect (SEE) testing of newly available power MOSFETS are presented.
Single-Event Effects (SEE) testing was conducted on the AMD e9173 Graphics Processor Unit (GPU). Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center.
This is an independent investigation that evaluates the single event destructive and transient susceptibility of the Xilinx Kintex-UltraScale device. Design/Device susceptibility is determined by monitoring the device under test (DUT) for Single Event Transient (SET) and Single Event Upset (SEU) induced faults by exposing the DUT to a heavy ion beam. Potential Single Event Latch-up (SEL) is monitored throughout heavy-ion testing by examining device current. This device does not have embedded mitigation. Hence, user implemented mitigation is investigated using Synopsys mitigation tools.
Single-Event Effects (SEE) testing was conducted on the nVidia Jetson TX1 System on Chip (SOC); herein referred to as device under test (DUT). Testing was conducted at Massachusetts General Hospitals (MGH) Francis H. Burr Proton Therapy Center on October 16th, 2016 using 200MeV protons. This testing trip was purposed to provide a baseline assessment of the radiation susceptibility of the DUT as no previous testing had been conducted on this component.
Single-Event Effects (SEE) testing was conducted on the nVidia GTX 1050 Graphics Processor Unit (GPU); herein referred to as device under test (DUT). Testing was conducted at Massachusetts General Hospitals (MGH) Francis H. Burr Proton Therapy Center on April 9th, 2017 using 200-MeV protons. This testing trip was purposed to provide a baseline assessment of the radiation susceptibility of the DUT as no previous testing had been conducted on this component.
Single-event effect (SEE) test results are presented for commercial grade, automotive grade, and radiation-hardened trench power MOSFETs.
This viewgraph presentation reviews the Single Event Effects (SEE) testing of the Phillips SA8016BW 2.5 GHz Synthesizer that was chose by the GLAST Program for Frequency Generation. Included in this are diagrams of the phased-locked loop (PLL), the synthesizer, and heater.
Single-Event Effects (SEE) testing was conducted on the nVidia GTX 1050 Graphics Processor Unit (GPU); herein referred to as device under test (DUT). Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on April 28th, 2018 using 200-MeV protons. This testing trip was purposed to provide additional radiation susceptibility data from payloads compiled in Q3FY18. While not all radiation-induced errors are critical, the effects on the application need to be considered. More so, failure of the device and an inability to reset itself should be considered detrimental to the application. Radiation effects on electronic components are a significant reliability issue for systems intended for space.
Single-Event Effects (SEE) testing was conducted on the AMD Ryzen 3 2200G microprocessor with integrated graphics. Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.