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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Polarization-induced (Pi) distributed or bulk doping in GaN, with a zero dopant ionization energy, can reduce temperature or frequency dispersions in impurity-doped p–n junctions caused by the deep-acceptor-nature of Mg, thus offering GaN power devices promising prospects. Before comprehensively assessing the benefits of Pi-doping, ideal junction behaviors and high-voltage capabilities should be confirmed. In this work, we demonstrate near-ideal forward and reverse I–V characteristics in Pi-doped GaN power p–n diodes, which incorporates linearly graded, coherently strained AlGaN layers. Hall measurements show a net increase in the hole concentration of 8.9 × 1016 cm−3 in the p-layer as a result of the polarization charge. In the Pi-doped n-layer, a record-low electron concentration of 2.5 × 1016 cm−3 is realized due to the gradual grading of Al0-0.72GaN over 1 μm. The Pi-doped p–n diodes have an ideality factor as low as 1.1 and a 0.10 V higher turn-on voltage than the impurity-doped p–n diodes due to the increase in the bandgap at the junction edge. A differential specific on-resistance of 0.1 mΩ cm2 is extracted from the Pi-doped p–n diodes, similar with the impurity-doped counterpart. The Pi-doped diodes show an avalanche breakdown voltage of ∼1.25 kV, indicating a high reverse blocking capability even without an ideal edge-termination. This work confirms that distributed Pi-doping can be incorporated in high-voltage GaN power devices to increase hole concentrations while maintaining excellent junction properties.

Nomoto, Kazuki↗
DOE OSTI2022

Observation of breakdown wave mechanism in avalanche ionization produced atmospheric plasma generated by a picosecond CO 2 laser

Understanding the formation and long-timescale evolution of atmospheric plasmas produced by ultrashort, long-wavelength infrared (LWIR) pulses is an important but partially understood problem. Of particular interest are plasmas produced in air with a peak laser intensity ~10 12 W/cm 2 , the so-called clamping intensity observed in LWIR atmospheric guiding experiments where tunneling and multi-photon ionization operative at near-IR or shorter wavelengths are inoperative. We find that avalanche breakdown on the surface of aerosol (dust) particles can act to seed the breakdown of air observed above the 200 GW/cm 2 threshold when a train of 3 ps 10.6 μm laser pulses separated by 18 ps is used. The breakdown first appears at the best focus but propagates backward toward the focusing optic as the plasma density approaches critical density and makes forward propagation impossible. The velocity of the backward propagating breakdown can be as high as 10 9 cm/s, an order of magnitude greater than measured with ns pulse-produced breakdown, and can be explained rather well by the so-called breakdown wave mechanism. Transverse plasma expansion with a similar velocity is assisted by UV photoionization and is observed as a secondary longitudinal breakdown mechanism in roughly 10% of the shots. When a cm-size, TW power beam is propagated, interception of aerosol particles is guaranteed and several (40 cm -3 ) breakdown sites appear, each initially producing a near-critical density plasma. On a 10 ns–1 μs timescale, shockwaves from each site expand radially and coalesce to produce a large hot gas channel. The radial velocity of the expansion agrees well with the prediction of the blast wave theory developed for ultrafast atmospheric detonations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes

A deep-ultraviolet Al0.6Ga0.4N p–i–n avalanche photodiode (APD) structure was grown on a (0001) AlN bulk substrate by metalorganic chemical vapor deposition. The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of the p-type region of the diode mesa and tested. The dark current density vs bias, photoresponse, and the optical gain of the APDs with and without ion implantation were compared. The devices fabricated with ion implantation showed improved performance, exhibiting lower dark current densities of ∼1 × 10−9 A/cm2 and a higher optical gain of ∼5.2 × 105 at a current density limit of 0.3 A/cm2. The average temperature coefficients of the reverse-bias breakdown voltage were also compared. Although the data showed negative coefficients for APDs fabricated both with and without ion implantation, the ion-implanted APDs showed an improvement relative to the devices fabricated without ion-implantation.

Physics↗
DOE OSTI2022

Performance in beam tests of irradiated Low Gain Avalanche Detectors for the ATLAS High Granularity Timing Detector

The High Granularity Timing Detector (HGTD) will be installed in the ATLAS detector to mitigate pile-up effects during the High Luminosity (HL) upgrade of the Large Hadron Collider (LHC) at CERN. The design of the HGTD is based on the use of Low Gain Avalanche Detectors (LGADs), with an active thickness of 50 μm, that allow to measure with high-precision the time of arrival of particles. The HGTD will improve the particle-vertex assignment by measuring the track time with a resolution ranging from approximately 30 ps at the beginning of the HL-LHC operations to 50 ps at the end. Performances of several unirradiated, as well as neutron- and proton-irradiated, LGAD sensors from different vendors have been measured in beam test campaigns during the years 2018 and 2019 at CERN SPS and DESY. This paper presents the results obtained with data recorded by an oscilloscope synchronized with a beam telescope which provides particle position information within a resolution of a few μm. Collected charge, time resolution and hit efficiency are presented. In addition to these properties, the charge uniformity is also studied as a function of the position of the incident particle inside the sensor pad.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Synchrotron light source X-ray detection with Low-Gain Avalanche Diodes

Abstract Low Gain Avalanche Diodes (LGADs) represent the state-of-the-art in timing measurements and will instrument the future Timing Detectors of ATLAS and CMS for the High-Luminosity LHC. While initially conceived as a sensor for charged particles, the intrinsic gain of LGADs makes it possible to detect low-energy X-rays with good energy resolution and excellent time resolution (tens of picoseconds). Using the Stanford Synchrotron Radiation Lightsource (SSRL) at SLAC, several LGADs designs were characterized with energies from 5 to 70 keV. The SSRL provides 10 ps pulsed X-ray bunches separated by 2 ns intervals with an energy dispersion (ΔE/E) of 10 -4 . LGADs from Hamamatsu Photonics (HPK) and Brookhaven National Laboratory (BNL) with different thicknesses ranging from 20 μm to 50 μm and different gain layer designs were read out using fast amplification boards and digitized with a high bandwidth and high sampling rate oscilloscope. PIN devices from HPK and AC-LGADs from BNL were characterized as well. A systematic and detailed characterization of the devices' energy linearity, resolution, and time resolution as a function of X-ray energy was performed for different biasing voltages at room temperature and are reported in this work. The charge collection and multiplication mechanism were simulated using Geant4 and TCAD Sentaurus, providing an important handle for interpreting the data.

Instruments & Instrumentation↗
DOE OSTI2024

Investigation of low gain avalanche detectors exposed to proton fluences beyond 10 15 n eq cm -2

Abstract Low gain avalanche detectors (LGADs) deliver excellent timing resolution, which can mitigate mis-assignment of vertices associated with pileup at the High Luminosity LHC and other future hadron colliders. The most highly irradiated LGADs will be subject to 2.5 × 10 15 n eq cm -2 of hadronic fluence during HL-LHC operation; their performance must tolerate this. Hamamatsu Photonics K.K. and Fondazione Bruno Kessler LGADs have been irradiated with 400 and 500 MeV protons respectively in several steps up to 1.5 × 10 15 n eq cm -2 . Measurements of the acceptor removal constants of the gain layers, evolution of the timing resolution and charge collection with damage, and inter-channel isolation characteristics, for a variety of design options, are presented here.

Instruments & Instrumentation↗
DOE OSTI2024

UV hybrid photon detector based on GaN photocathodes and Si low gain avalanche diode

Photon detectors featuring single-photon sensitivity play a crucial role in various scientific domains, including high-energy physics, astronomy, and quantum optics. Fast response time, high quantum efficiency, and minimal dark counts are the characteristics that render them ideal candidates for detecting individual photons with exceptional signal-to-noise ratios, at frequencies in the range of hundreds of MHz. Here, in this study, we report on our first design and operational results on a Hybrid Photon Detector (HPD) that combines the high quantum efficiency of a Gallium Nitride (GaN) photocathode and the low noise characteristics of a Si-based Low-Gain Avalanche Diode (LGAD). This hybrid detection scheme has the potential to reach single-photon detection sensitivity with high quantum efficiency, low noise levels and capable of operating at hundreds of MHz repetition rates.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Impact of proton irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)

Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33 × 10 14 p/cm 2 . The electrostatic performance of both irradiated and non-irradiated devices was evaluated using I-V and C-V measurements. Moreover, charge collection measurements using α particles were also conducted. SiC LGADs displayed a loss in rectification, high ON-state resistances >10 10 Ω-cm 2 , and the complete removal of gain when exposed to the highest proton fluence. Additionally, the reductions in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation-induced defects also hinders carrier acceleration, which reduces impact ionization and further gain reduction. LGADs exposed to a fluence of 1 × 10 14 p/cm 2 experienced a partial recovery in gain (originally having a value of ∼ 2) with a value of ∼ 1.65 when applying a bias of 500 V. Charge trapping was also seen in the reduction of charge collection efficiency (CCE) to ∼ 65% for the PiN diode. However, despite the reduction in device performance, the demonstration of a measurable signal after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

Response of AC-coupled low gain avalanche detectors to ionizing and non-ionizing radiation damage

Low gain avalanche diodes with DC- and AC-coupled readout were exposed to ionizing and non-ionizing radiation at levels relevant to future experiments in particle, nuclear, and medical physics and to astrophysics. Damage-related change in their acceptor removal constants and in the resistivity of the region between the guard ring and the active area are reported, as is change in the leakage current and depletion voltages of the active volumes.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Parallel-plate avalanche counters for heavy-ion beam tracking: History and mysteries

Despite being an old detector concept, position-sensitive parallel-plate avalanche counters (PPACs) remain widely used today for heavy-ion position and timing measurements. In modern rare isotope beam facilities and large-acceptance fragment separators, PPACs are used to characterize beam properties (diagnostics), facilitate beam delivery (tuning), and provide event-by-event beam tracking for particle identification (PID). Most popular particle localization methods in PPAC detectors are based on strip electrodes electrically connected to resistive-chain circuits or delay lines. More exotic systems include optical readouts based on recording electroluminescence light with high-granularity photodetector arrays or high-resolution resistive anode electrodes. PPACs with conventional resistive-chain or delay-line readouts achieve typical position and time resolutions of below 1 mm ( σ ) and around 150 ps ( σ ), respectively. In addition, delay-line systems are capable of counting rates above several hundred kHz for beam areas of a few millimeters square, and around 1 MHz for larger beam sizes. Resistive-chain readouts have limited rates of a few tens of kHz. A review of the operation principles and performance of PPAC detectors is presented in this paper. We will discuss decades-long experience building and operating PPACs developed at the National Superconducting Cyclotron Laboratory, and then refined at the Facility for Rare Isotope Beams (FRIB), mostly focusing on the delay-line readout technique (DLPPAC). We will also discuss problems that arise due to electric discharges at high rates and briefly describe ongoing developments at FRIB. Published by the American Physical Society 2024

Physics↗
DOE OSTI2022

Nonlinear dynamics, avalanches, and noise for driven Wigner crystals

Here we consider the driven dynamics of Wigner crystals interacting with random disorder. Using numerical simulations, we find a rich variety of transport phenomena as a function of charge density, drive, and pinning strength. For weak pinning, the system forms a defect-free crystal that depins elastically. When the pinning is stronger, a pinned glass phase appears that depins into a filamentary flow state, transitions at higher drives into a disordered flow phase, and finally forms a moving smectic. Within the filamentary flow phase, the conduction curves can show switching dynamics as well as negative differential conductivity in which switching events cause some flow channels to be blocked. The velocity noise in the filamentary flow regime exhibits narrow band characteristics due to the one-dimensional nature of the motion, while the moving smectic has narrow band velocity noise with a washboard frequency. In the disordered flow state, the noise power reaches a peak value and the noise has a 1/$\mathcal{f}$ character. Our transport results are consistent with recent experimental transport studies in systems where Wigner crystal states are believed to be occurring. Below the conduction threshold, we find that avalanches with a power-law size distribution appear when there are sudden local rearrangements of charges from one pinned configuration to another.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Universality class for loopless invasion percolation models and a percolation avalanche burst model for hydraulic fracturing

Invasion percolation is a model that was originally proposed to describe growing networks of fractures. In this work, we describe a loopless algorithm on random lattices, coupled with an avalanche-based model for bursts. The model reproduces the characteristic b-value seismicity and spatial distribution of bursts consistent with earthquakes resulting from hydraulic fracturing (“fracking”). We test models for both site invasion percolation and bond invasion percolation. These have differences on the scale of site and bond lengths l. But since the networks are characterized by their large-scale behavior, l << L, we find small differences between scaling exponents. Though data may not differentiate between models, our results suggest that both models belong to different universality classes.

58 GEOSCIENCES↗
DOE OSTI2022

High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes

Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trapping location. Here, we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion trapping chips. Furthermore, we detect the state of a trapped Sr + ion via fluorescence collection with the SPAD, achieving 99.92(1)% average fidelity in 450 μs, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Counting multiple X-rays per pulse with an avalanche photodiode detector

Avalanche photodiode detectors (APDs) at X-ray synchrotrons are typically limited to recording at most one photon per synchrotron pulse. Digitizing the APD amplifier outputs enables signal processing to accurately measure a mean count rate of at least four photons per pulse based on initial synchrotron measurements. Higher rates are readily achievable. This method allows APDs to be utilized for time-resolved measurements at much higher intensities than before.

Powers, Liam T. (ORCID:000900047481248X)↗
DOE OSTI2021

32 Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon

We report a heterogeneous GaAs-based quantum dot (QD) avalanche photodiode (APD) on silicon with an ultralow dark current of 10 pA at − <#comment/> 1 V , 3 dB bandwidth of 20 GHz and record gain-bandwidth product (GBP) of 585 GHz. Furthermore, open eye diagrams up to 32 Gb/s are demonstrated at 1310 nm. The k-factor has been measured for these devices to be as low as 0.14. A polarization dependence on gain and bandwidth has been observed and investigated. This shows the potential to integrate a high-speed receiver in a wavelength division multiplexing (WDM) system on a QD-based silicon photonics platform.

Tossoun, Bassem↗
DOE OSTI2023

Control of intense light with avalanche-ionization plasma gratings

High-peak-power lasers are fundamental to high-field science: increased laser intensity has enabled laboratory astrophysics, relativistic plasma physics, and compact laser-based particle accelerators. However, the meter-scale optics required for multi-petawatt lasers to avoid light-induced damage make further increases in power challenging. Plasma tolerates orders-of-magnitude higher light flux than glass, but previous efforts to miniaturize lasers by constructing plasma analogs for conventional optics were limited by low efficiency and poor optical quality. We describe a new approach to plasma optics based on avalanche ionization of atomic clusters that produces plasma volume transmission gratings with dramatically increased diffraction efficiency. We measure an average efficiency of up to 36% and a single-shot efficiency of up to 60%, which is comparable to key components of high-power laser beamlines, while maintaining high spatial quality and focusability. These results suggest that plasma diffraction gratings may be a viable component of future lasers with peak power beyond 10 PW.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Fabrication of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Low gain avalanche detectors (LGADs) offer high temporal resolution for high energy particle detection, which is critical for next generation experiments in hadron colliders. While silicon LGADs (Si-LGADs) have rapidly matured in the last decade, research into silicon carbide (SiC) LGADs has only recently begun. By accounting for fundamental differences in material properties and fabrication processes, we present a prototype device design and process flow for 4H-SiC LGADs with etch-based isolation. Critical steps of the process flow and their results are discussed, including plasma etching, passivation, and the formation of low resistivity contacts. Electrical characterization (I-V, C-V) shows sufficient depletion of the device structure to demonstrate low-gain charge carrier multiplication.

High Energy Physics↗