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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Tracer particle transport dynamics in the diffusive sandpile cellular automaton

The confinement properties of the diffusive running sandpile are characterized by tracking the motion of a population of marked grains of sand. It is found that, as the relative strength of the avalanching to the diffusive transport channel is varied, a point is reached at which the particle global confinement time and the probability density functions of the jump-sizes and waiting-times of the tracked grains experience a sudden change, thus revealing a dynamical transition, that is consistent with previous studies (Newman DE et al., Phys Rev Lett 2002;88(20):204304). Across this transition, the sandpile moves from a regime characterized by self-similarity and memory, where avalanches of all possible sizes dominate transport across the system, to another regime where transport is taken over by near system-size, quasi-periodic avalanches. Values for the fractional transport exponents that quantify effective transport across the sandpile prior to the transition are also obtained.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

A prediction model of failure threshold for shear deformation in a Zr-based bulk metallic glass

The failure of bulk metallic glasses (BMGs) during plastic deformation at room temperature is abrupt and instantaneous, while the analysis of precursor information based on avalanche events helps predict catastrophic failure. An acoustic emission (AE) signal can provide accurate precursor information for material failure, due to its sensitive and high fast calculation ability. In the current study, AE monitoring tests are carried out during uniaxial compression tests of BMGs at different strain rates. The AE experimental failure threshold, E max , is proposed on the basis of AE cumulative energy, which reflects the intensity of damage evolution at different loading conditions. Compared with the critical shear band velocity (CSBV) associated with stick-slip dynamics of serrated flow, E max is a more sensitive failure parameter since it is connected with the local microscopic changes that occur during the material response process. Here, the E max is obtained prior to reaching the CSBV since the calculation of these two avalanches analysis focuses on the different stages of shear band growth. In particular, AE events are related to the “dry” friction process in the first stage, however, the CSBV is responsible for the “viscous” glide in the second stage. Therefore, Emax is not affected by the complex interactions between the shear bands during the stick-slip process. The maximum avalanche of serrated flow, S max , is proposed as the experimental failure threshold, which depends on the applied strain rate as S max ~ $\dot{ε}$ –λ . According to the relationship of E max and S max , the theoretical failure threshold, E max , follows a criterion E max = 2545$\dot{ε}$ –λ - 4468, where λ is equivalent to 0.15 for this work. Finally, combining the different calculations and AE measurements, this model gives new insights to predict the deformation failure behavior of Zr-based BMGs.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A reduced model for edge localized mode control by supersonic molecular beam injection and pellet injection

We develop a diffusive, bistable, tri-unstable cellular automata (CA) model to study the dynamics of H-mode pedestal with edge localized modes (ELMs) and their control by supersonic molecular beam injection (SMBI) and pellet injection (PI). It is shown that the new CA model can reproduce the key features of H-mode pedestals with various types of ELM, including Type-I ELM. SMBI and PI are modeled as additional grain injections into pedestal with varying degrees of injected materials and profiles. It is found that H-mode pedestal responds to SMBI differently depending on the baseline fueling. If the baseline fueling is large enough to allow Type-I ELM, SMBI enhances large transport avalanches caused by ballooning instabilities. These avalanches prevent the total pedestal current from reaching the boundary for peeling instability. On the other hand, if the baseline fueling is low to avoid Type-I ELM, SMBI enhances small scale avalanches, which prevent the pedestal from growing to profiles globally vulnerable to ballooning instabilities. These imply that SMBI can mitigate different types of ELM by converting them to more benign types. From CA modeling of pellet injection, it is shown that Type-I ELM can be triggered by pellet injection with sufficient strength and depth. Scanning the frequency of pellet injection, it is found that a maximum efficiency of pellet pacing is achieved when the injection frequency is approximately ten times the natural frequency of Type-I ELM.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Secondary scintillation properties of multi-layer THGEMs operated in low-pressure CF 4 and Ar/5%Xe

We present a measurement of the secondary scintillation yield produced by two-layer Thick Gas Electron Multipliers (M-THGEMs) in pure Tetrafluoromethane (CF 4 ) gas and in Ar mixed with 5% Xe in low-pressures down to 20 Torr. The detector was irradiated with 5.49 MeV alpha particles from a low-rate 241-Am source. The secondary scintillation light generated during the gas avalanche process was read out by a Hamamatsu photomultiplier tube (model R8520-406), sensitive to a broad wavelength range (160–650 nm). The avalanche charge was collected on the bottom electrode of M-THGEM and correlated to the scintillation light on an event-by-event basis. We observed that, for both gas types, the value of the photon to electron production ratio (0.4 ph/el in CF 4 and 0.1 ph/el in Ar/5%Xe) increases with the thickness of the M-THGEM electrodes and varies significantly with the pressure, being higher at lower values. The decrease in electroluminescence yield at higher pressures is much more pronounced in the Ar/Xe mixture. In addition, because of a larger gas avalanche volume, the electroluminescence light yield is larger in thicker M-THGEM structures. Presented results are particularly useful for designing the next generation of Optical-readout Time Projection Chambers (O-TPCs) operated at low-pressure CF 4 ; applications include experimental nuclear physics with rare isotope beams, dark matter detection with directional sensitivity and observation of the Migdal effect in a low-pressure Optical TPC.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Characterization of lateral amorphous selenium photodetectors for low-photon and VUV detection at cryogenic temperatures

The performance of amorphous selenium (a-Se) as a cryogenic photodetector material is evaluated through a series of experiments using laterally structured devices operated in a custom optical test stand. These studies investigate the response of a-Se detectors to low-photon fluxes at high electric fields near avalanche conditions, the linearity of the photoconductive response over a wide dynamic range and the direct detection of narrowband 130 nm vacuum ultraviolet (VUV) illumination. At 87 K, matched-filter analysis shows reliable single-shot detection with efficiencies ≥80% and area under the curve (AUC) ≥ 0.85 using as few as ∼ 6800 incident 401 nm photons, corresponding to ∼ 3400 photons within field-active regions after accounting for geometric constraints. Measurements are performed at cryogenic temperatures using calibrated photon fluxes derived from a silicon photomultiplier reference and a characterized optical filter stack. Additional experiments using a tellurium-doped a-Se (a-SeTe) device explore the material's behavior under identical test conditions and demonstrate that avalanche is achievable in a-SeTe at cryogenic temperatures. The results demonstrate reproducible low-noise operation, VUV sensitivity and field-dependent gain behavior in a lateral a-Se architecture, representing the first reported observation of avalanche multiplication in laterally structured a-Se and a-SeTe devices at cryogenic temperatures. These findings support the potential integration of laterally structured a-Se devices into next-generation pixelated liquid-argon time projection chambers (TPCs) requiring scalable, high-field-compatible photon detection systems.

Amorphous selenium↗
DOE OSTI2023

Origin of Soft-Switching Output Capacitance Loss in Cascode GaN HEMTs at High Frequencies

Output capacitance (C OSS ) loss (E DISS ) is produced when the C OSS of a power device is charged and discharged, which ideally should be a lossless process. This loss was recently revealed to be a crucial concern for GaN high electron mobility transistors (HEMTs) in high-frequency soft-switching applications. Among various GaN devices, the composite-type, cascode GaN HEMT was reported to show the largest E DISS with a voltage dependence distinct from discrete GaN HEMTs. However, the physical origins of the EDISS in cascode GaN HEMTs remain unclear. This work fills this gap by identifying three loss components and, for the first time, experimentally quantifying them in the multi-MHz resonant switching. These loss components include a) the avalanche loss of Si MOSFET, b) the intrinsic E DISS of GaN HEMT, and c) the Si avalanche-induced GaN turn-ON loss. The last component was found to dominate E DISS at high voltage. By eliminating the Si avalanche and the associated loss components (a) and (c), the E DISS of cascode GaN HEMTs can be reduced by up to 75% at the price of an increase in output charge and switching transition time. Furthermore, these results provide new physical insights and practical guidelines to trim the soft-switching loss of cascode GaN HEMTs in high-frequency applications.

42 ENGINEERING↗
DOE OSTI2025

Characterization of Lateral Amorphous Selenium Photodetectors for Low-Photon and VUV Detection at Cryogenic Temperatures

The performance of amorphous selenium (a-Se) as a cryogenic photodetector material is evaluated through a series of experiments using laterally structured devices operated in a custom optical test stand. These studies investigate the response of a-Se detectors to low-photon fluxes at high electric fields near avalanche conditions, the linearity of the photoconductive response over a wide dynamic range and the direct detection of narrowband 130 nm vacuum ultraviolet (VUV) illumination. At 87 K, matched-filter analysis shows reliable single-shot detection with efficiencies greater than or equal to 80 percent and area under the curve (AUC) greater than or equal to 0.85 using as few as approximately 6800 incident 401 nm photons, corresponding to approximately 3400 photons within field-active regions after accounting for geometric constraints. Measurements are performed at cryogenic temperatures using calibrated photon fluxes derived from a silicon photomultiplier reference and a characterized optical filter stack. Additional experiments using a tellurium-doped a-Se (a-SeTe) device explore the material's behavior under identical test conditions and demonstrate that avalanche is achievable in a-SeTe at cryogenic temperatures. The results demonstrate reproducible low-noise operation, VUV sensitivity and field-dependent gain behavior in a lateral a-Se architecture, representing the first reported observation of avalanche multiplication in laterally structured a-Se and a-SeTe devices at cryogenic temperatures. These findings support the potential integration of laterally structured a-Se devices into next-generation pixelated liquid-argon time projection chambers (TPCs) requiring scalable, high-field-compatible photon detection systems.

FOS: Physical sciences↗
DOE OSTI2022

Microscopic dynamics underlying the stress relaxation of arrested soft materials

Arrested soft materials such as gels and glasses exhibit a slow stress relaxation with a broad distribution of relaxation times in response to linear mechanical perturbations. Although this macroscopic stress relaxation is an essential feature in the application of arrested systems as structural materials, consumer products, foods, and biological materials, the microscopic origins of this relaxation remain poorly understood. Here, we elucidate the microscopic dynamics underlying the stress relaxation of such arrested soft materials under both quiescent and mechanically perturbed conditions through X-ray photon correlation spectroscopy. By studying the dynamics of a model associative gel system that undergoes dynamical arrest in the absence of aging effects, we show that the mean stress relaxation time measured from linear rheometry is directly correlated to the quiescent superdiffusive dynamics of the microscopic clusters, which are governed by a buildup of internal stresses during arrest. We also show that perturbing the system via small mechanical deformations can result in large intermittent fluctuations in the form of avalanches, which give rise to a broad non-Gaussian spectrum of relaxation modes at short times that is observed in stress relaxation measurements. These findings suggest that the linear viscoelastic stress relaxation in arrested soft materials may be governed by nonlinear phenomena involving an interplay of internal stress relaxations and perturbation-induced intermittent avalanches.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Gain characterization of LGAD sensors with beta particles and 28-MeV protons

Low Gain Avalanche Diodes, also known as LGADs, are widely considered for fast-timing applications in high energy physics, nuclear physics, space science, medical imaging, and precision measurements of rare processes. Such devices are silicon-based and feature an intrinsic gain due to a p + -doped layer that allows the production of a controlled avalanche of carriers, with multiplication on the order of 10–100. This technology can provide time resolution on the order of 20–30 ps, and variants of this technology can provide precision tracking too. The characterization of LGAD performance has so far primarily been focused on the interaction of minimum ionizing particles for high energy and nuclear physics applications. This article expands the study of LGAD performance to highly-ionizing particles, such as 28-MeV protons, which are relevant for several future scientific applications, e.g. in biology and medical physics, among others. These studies were performed with a beam of 28-MeV protons from a tandem Van de Graaff accelerator at Brookhaven National Laboratory and beta particles from a ^90Sr source; these were used to characterize the response and the gain of an LGAD as a function of bias voltage and collected charge. Here, the experimental results are also compared to TCAD simulations.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.

42 ENGINEERING↗
DOE OSTI2021

Direct current response of a thin scCVD diamond detector under increased applied field to 14.1 MeV neutrons

An avalanche effect yielding inherent gain can be exploited in thin, single-crystal chemical vapor deposition (scCVD) diamond. It occurs when a high enough bias is applied across the diamond thickness while avoiding breakdown. This charge multiplication effect was studied previously with alpha particles and heavy ions either by using the transient current technique or by measuring the energy spectrum. The measurements we obtained to evaluate the charge multiplication performance of a 10 μm thick scCVD diamond detector used a novel approach—we employed an electrometer to characterize the response of the detector by performing directly coupled current measurements (time-averaged charge, at 1 Hz sampling) when exposed to 14.1 MeV neutrons from deuterium-tritium fusion. We measured both the dark and irradiated currents from the detector over a range of applied displacement field values from 2 to 75 V/μm. A histogram method with central mean and standard deviation width was used to determine the current over each measurement duration typically from 100 to 300 seconds. The dark-subtracted irradiated current (i.e., contrast) was used to evaluate the gain of the detector at each applied displacement field. The contrast at an applied displacement field between 15 and 20 V/μm was higher than the expected linear increase in contrast proportional to the increased applied bias, indicating the possible presence of avalanche events in the diamond. The detector response also indicated possible polarization and charge depletion effects. These results provide an opportunity to further explore the use of thin scCVD diamond as a fast neutron current mode detector with inherent gain.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Mild-to-wild plastic transition is governed by athermal screw dislocation slip in bcc Nb

Plastic deformation in crystals is mediated by the motion of line defects known as dislocations. For decades, dislocation activity has been treated as a homogeneous, smooth continuous process. However, it is now recognized that plasticity can be determined by long-range correlated and intermittent collective dislocation processes, known as avalanches. Here we demonstrate in body-centered cubic Nb how the long-range and scale-free dynamics at room temperature are progressively quenched out with decreasing temperature, eventually revealing intermittency with a characteristic length scale that approaches the Burgers vector itself. Plasticity is shown to be bimodal across the studied temperature regime, with conventional thermally-activated smooth plastic flow (‘mild’) coexisting with sporadic bursts (‘wild’) controlled by athermal screw dislocation activity, thereby violating the classical notion of temperature-dependent screw dislocation motion at low temperatures. An abrupt increase of the athermal avalanche component is identified at the critical temperature of the material. Our results indicate that plasticity at any scale can be understood in terms of the coexistence of these mild and wild modes of deformation, which could help design better alloys by suppressing one of the two modes in desired temperature windows.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Indefinite and bidirectional near-infrared nanocrystal photoswitching

Materials whose luminescence can be switched by optical stimulation drive technologies ranging from superresolution imaging, nanophotonics, and optical data storage, to targeted pharmacology, optogenetics, and chemical reactivity. Furthermore, these photoswitchable probes, including organic fluorophores and proteins, can be prone to photodegradation and often operate in the ultraviolet or visible spectral regions. Colloidal inorganic nanoparticles can offer improved stability, but the ability to switch emission bidirectionally, particularly with near-infrared (NIR) light, has not, to our knowledge, been reported in such systems. Here, we present two-way, NIR photoswitching of avalanching nanoparticles (ANPs), showing full optical control of upconverted emission using phototriggers in the NIR-I and NIR-II spectral regions useful for subsurface imaging. Employing single-step photodarkening and photobrightening, we demonstrate indefinite photoswitching of individual nanoparticles (more than 1,000 cycles over 7 h) in ambient or aqueous conditions without measurable photodegradation. Critical steps of the photoswitching mechanism are elucidated by modelling and by measuring the photon avalanche properties of single ANPs in both bright and dark states. Unlimited, reversible photoswitching of ANPs enables indefinitely rewritable two-dimensional and three-dimensional multilevel optical patterning of ANPs, as well as optical nanoscopy with sub-Å localization superresolution that allows us to distinguish individual ANPs within tightly packed clusters.

36 MATERIALS SCIENCE↗
DOE OSTI2020

When does turbulence spreading matter?

Few, if any, of the many papers on turbulence spreading address the key question of how turbulence spreading actually affects the profile structure. In this work, we are using a reduced model to answer that question. Turbulence spreading is most relevant near regions where the profiles support a strong intensity gradient ∇I. One such case is at the edge of an L mode ischarge, near a source of turbulence [i.e., either a localized source of edge turbulence or an influx of turbulence from the scrape-off layer (SOL)]. Another is in “No Man’s Land” (NML), which connects the pedestal to the stiff core in H mode. In the case of L mode, without an edge intensity source, the turbulence intensity profile is nearly flat and spreading has a weak effect. An edge localized source increases the edge ∇I, which then drives inward spreading. Invasion of turbulence from the SOL to the edge softens the edge pressure gradient. In H mode, the strong shear suppression of pedestal turbulence necessarily forces a sharp ∇I in NML. This sharp∇I drives a significant flux of turbulence from the core to the pedestal, where it is ultimately dissipated by shearing. Counter-intuitively, the results indicate that spreading actually increases the pedestal height and width and hence the energy content in H mode. This suggests that models of the pedestal structure should include NML turbulence spreading effects. The relation of avalanches to spreading is studied. Spreading weakly affects the avalanche distribution, but the spatiotemporal correlation of intensity increases with spreading.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Sudden collapse of a pressure profile generated by off-axis heating in a linear magnetized plasma

Here, the features of an unexpected, large event that arises spontaneously during a basic heat transport experiment are presented. It consists of the sudden collapse of the radial plasma pressure profile, akin to disruption events observed in toroidal magnetic confinement devices. The experiment is performed on the Large Plasma Device at the University of California, Los Angeles (UCLA). It uses a LaB6 thermionic emitter of annular shape to induce off-axis heating of a cold, afterglow plasma, in a linear magnetic geometry. The temporal evolution consists of three regimes. During an early, quiescent period, classical heat transport along and across the magnetic field arises from Coulomb collisions. After significant pressure gradients develop, drift-Alfvén waves become unstable. Upon reaching large amplitude, they trigger avalanche events that flatten the outer part of the heated region, which, in turn, quenches the instability. Due to the sustained heating, the pressure profile rebuilds and the process repeats, leading to a relatively long, second regime that displays multiple avalanches, but suddenly, the annular pressure profile is observed to collapse. After this collapse, the system enters a third regime with large fluctuations. Before the collapse, a rapid, runaway heating environment arises whose time evolution exhibits a self-similar dependence on the applied voltage. The time evolution, morphology, and scaling of the collapse event are presented, and an examination is made of the underlying mechanisms.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Fast and efficient Sb-based type-II phototransistors integrated on silicon

Increasing the energy efficiency and reducing the footprint of on-chip photodetectors enable dense optical interconnects for emerging computational and sensing applications. While heterojunction phototransistors (HPTs) exhibit high energy efficiency and negligible excess noise factor, their gain-bandwidth product (GBP) has been inferior to that of avalanche photodiodes at low optical powers. Here, we demonstrate that utilizing type-II energy band alignment in an Sb-based HPT results in six times smaller junction capacitance per unit area and a significantly higher GBP at low optical powers. These type-II HPTs were scaled down to 2 μm in diameter and fully integrated with photonic waveguides on silicon. Thanks to their extremely low dark current and high internal gain, these devices exhibit a GBP similar to the best avalanche devices (∼270 GHz) but with one order of magnitude better energy efficiency. Their energy consumption is about 5 fJ/bit at 3.2 Gbps, with an error rate below 10−9 at −25 dBm optical power at 1550 nm. These features suggest new opportunities for creating highly efficient and compact optical receivers based on phototransistors with type-II band alignment.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Plasma breakdown in bubbles passing between two pin electrodes

The ignition of plasmas in liquids has applications from medical instrumentation to manipulation of liquid chemistry. Formation of plasmas directly in a liquid often requires prohibitively large voltages to initiate breakdown. Producing plasma streamers in bubbles submerged in a liquid with higher permittivity can significantly lower the voltage needed to initiate a discharge by reducing the electric field required to produce breakdown. The proximity of the bubble to the electrodes and the shape of the bubbles play critical roles in the manner in which the plasma is produced in, and propagates through, the bubble. In this paper, we discuss results from a three-dimensional direct numerical simulation (DNS) used to investigate the shapes of bubbles formed by injection of air into water. Comparisons are made to results from a companion experiment. A two-dimensional plasma hydrodynamics model was then used to capture the plasma streamer propagation in the bubble using a static bubble geometry generated by the DNS The simulations showed two different modes for streamer formation depending on the bubble shape. In an elliptical bubble, a short electron avalanche triggered a surface ionization wave (SIWs) resulting in plasma propagating along the surface of the bubble. In a circular bubble, an electron avalanche first traveled through the middle of the bubble before two SIWs began to propagate from the point closest to the grounded electrode where a volumetric streamer intersected the surface. In an elliptical bubble approaching a powered electrode in a pin-to-pin configuration, we experimentally observed streamer behavior that qualitatively corresponds with computational results. Optical emission captured over the lifetime of the streamer curve along the path of deformed bubbles, suggesting propagation of the streamer along the liquid/gas boundary interface. Plasma generation supported by the local field enhancement of the deformed bubble surface boundaries is a mechanism that is likely responsible for initiating streamer formation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

1D modeling of plasma streamers at ammonia-air flame conditions

Abstract Self-consistent 1D modeling of streamers in ammonia-oxygen-nitrogen-water mixtures has been performed in this work. A fluid model that includes species transport, electrostatic potential, and detailed chemistry was developed and verified. This model is then used to simulate the avalanche, streamer formation and propagation phases, driven by a nanosecond voltage pulse, at different thermochemical conditions derived from a 1D laminar premixed ammonia-air flame. The applicability of the Meek’s criterion in predicting the streamer inception location was successfully confirmed. Streamer formation and propagation duration were found to vary significantly with different thermochemical conditions, due to the difference in ionization rates. The thermochemical state also affected the breakdown characteristics which was tested by maintaining the background reduced electric field constant. Detailed kinetic analyses revealed the importance of O ( 1 D ) in the production of key radicals, such as O, OH, and NH 2 . Furthermore, the contributions of the dissociative electronic excitation of NH 3 towards the production of H and NH 2 radicals have also been reported. Spatial and temporal evolution of the electron energy loss fractions for various inelastic collision processes at different thermochemical states uncovered the input plasma energy spent of fuel dissociation and the large variability in the dominant processes during the avalanche and streamer propagation phases. The methodology and analyses reported in this work are key towards developing effective strategies for controlled nanosecond-pulsed non-equilibrium plasma sources used for ammonia ignition and flame stabilization.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗