Development of epitaxial structures for radiation resistant silicon solar cells
Epitaxial structures for radiation resistant silicon solar cells
SILICON↗
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Improved process for epitaxial deposition of silicon on prediffused substrates
Process for fabricating integrated circuits uniformly deposits silicon epitaxially on prediffused substrates without affecting the sublayer diffusion pattern. Two silicon deposits from different sources, and deposited at different temperatures, protect the sublayer pattern from the silicon tetrachloride reaction.
Clarke, M. G.↗
Epitaxial growth of indium antimonide films as studied in situ by electron diffraction.
Epitaxial growth of indium antimonide thin films as studied in situ by electron diffraction
Khan, I. H.↗
Second breakdown of double epitaxial transistors.
Second breakdown of transistors with diffused emitter, epitaxial collector and base, obtaining maximum operating current dependence on base width and resistivity
Ernick, F. G.↗
Epitaxial growth of GaSb from the liquid phase.
Epitaxial growth of n-type layers of gallium antimonide from liquid phase on p-type substrates, discussing growing process applications and advantages
Burns, J. W.↗
Development of multilayer epitaxy for high reliability transistors Interim summary report Apr. - Dec. 1968
Multilayer epitaxy method for fabricating high current p-n-p silicon transistors
Source record↗
The preparation and properties of vapor- deposited epitaxial InAs sub 1-x P sub x using arsine and phosphine.
Vapor phase epitaxial production of indium arsenic phosphide crystalline layers, discussing electron mobilities, electrical resistivities and doping
Clough, R. B.↗
Vapor-phase growth of epitaxial GaAs sub 1-x Sb sub x alloys using arsine and stibine.
Vapor phase growth of epitaxial single crystalline GaAs-GaSb alloys using arsine and stibine
Clough, R. B.↗
Formation of epitaxial beta-SiC films on sapphire
Epitaxial beta-SiC films formation on sapphire by chemical conversion
Khan, I. H.↗
Insignificance of lattice misfit for epitaxy
Au, Ag and Al films evaporation in ultrahigh vacuum on LiF and MgO surfaces, showing insignificant role of lattice misfit for epitaxy
Bauer, E.↗
Low-temperature epitaxy of beta-SiC by reactive deposition
Epitaxial beta SiC film formation on SiC by reactive evaporation or sputtering at low temperature
Haq, K. E.↗
Crystals and epitaxial layers of boron phosphide
Epitaxial boron phosphides single crystals growth, using thermal decomposition and reduction for deposition on hexagonal silicon carbide substrates basal plane
Chu, S. C.↗
Apollo 12 clinopyroxenes - Exsolution and epitaxy
Apollo 12 clinopyroxenes exsolution and epitaxy by electron microprobe and single crystal X ray diffraction
Bence, A. E.↗
Mobile cylindrical magnetic domains in epitaxial garnet films
Epitaxial garnet films magnetic anisotropic models, describing mobile cylindrical domains
Besser, P. J.↗
Epitaxial orientation studies of gold on uhv- cleaved mica during early stages of nucleation and growth
Epitaxial deposition of Au on ultrahigh vacuum cleaved mica during early nucleation and growth
Elliot, A. G.↗
The resistivity of epitaxial films of silver with controlled surface roughness
Epitaxial Ag thin film with controlled surface roughness on mica, measuring electrical resistivity as function of temperature, thickness and surface specularity in vacuum
Berman, A.↗
Solid-phase epitaxial growth of Si mesas from Al metallization.
Using scanning electron microscopy, Si epitaxial growth from solution in solid Al onto crystal Si substrates was studied. Growth in reentrant corners of the substrate was found to be favored over growth onto a flat surface. These preferred locations for growth appear to be the result of a force not present in conventional crystal growth from fluid media, namely, the nonuniform stress field present in solids.
Sankur, H.↗
Improved epitaxial process for fabricating silicon carbide semiconductor devices
Process of growing expitaxial silicon carbide (SiC) layers on SiC substrates so that epitaxial growth is perpendicular to c-axis by chemical vapor deposition process at temperatures of 1590 to 1660 K minimizes variations in stacking sequence and problems associated with high temperatures.
Will, H. A.↗