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Results for “field effect transistor (FET)”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2018

Current Source Logic Gate

A current source logic gate with depletion mode field effect transistor ("FET") transistors and resistors may include a current source, a current steering switch input stage, and a resistor divider level shifting output stage. The current source may include a transistor and a current source resistor. The current steering switch input stage may include a transistor to steer current to set an output stage bias point depending on an input logic signal state. The resistor divider level shifting output stage may include a first resistor and a second resistor to set the output stage point and produce valid output logic signal states. The transistor of the current steering switch input stage may function as a switch to provide at least two operating points.

Krasowski, Michael J.↗
DOE OSTI2020

Semiconductor power device including wire or ribbon bonds over device active region

A semiconductor power device including a base plate; an input lead; an output lead; a field effect transistor (FET) power die disposed over the base plate, wherein the FET power die includes a set of source fingers, a set of drain fingers, and a set of gate fingers disposed directly over an active region, wherein the gate fingers are configured to receive an input signal from the input lead, and wherein the FET power die is configured to process the input signal to generate an output signal at the drain fingers for routing to the output lead; and electrical conductors (wirebonds or ribbons) bonded to the source and/or drain directly over the active region of the FET power die. The electrical conductors produce additional thermal paths between the active region and the base plate for thermal management of the FET power die.

42 ENGINEERING↗
DOE OSTI2024

Selective solid-state isolation of NMR circuit elements using back-to-back field effect transistors

Nuclear Magnetic Resonance (NMR) electronics that employ selective solid-state isolation of circuit elements can include solid-state switches, such as back-to-back Field Effect Transistor (FET) pairs, and isolated gate drive electronics adapted to operate the solid-state switches in order to selectively decouple induction coils from receive electronics. The solid-state switches can be placed in series to achieve higher standoff voltages, and can be configured for low on resistance and short switching times. The gate drive electronics can include electrical isolation components adapted to enhance standoff voltages and reduce electrical noise at the selectively isolated receive electronics.

Walsh, David O.↗
DOE OSTI2025

Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design

Alpha particles are known to be a major source of particles creating soft errors in semiconductor devices, such as content flipping in Static Random-Access Memory (SRAM). Recent advancements in transistor nodes have led to the introduction of Gate-All-Around Field Effect Transistors (GAA-FETs), which have better gate control, thus better electrostatics. Moreover, the introduction of bottom dielectric isolation (BDI) eliminates substrate leakage and thus is expected to enhance its radiation hardness. It is thus important to explore if one can design an SRAM that is completely radiation-hard to alpha particles. In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design an SRAM using GAA-FET technology so that it is immune to single alpha particle radiation error. In other words, with the design, there will be no single-event upset (SEU) due to alpha particles. We first use ab initio calculations in PHITS to show that there is a maximum linear energy transfer (LET), LET max , for the alpha particle in Si and Si x Ge 1-x . Based on that, by de signing a sub-7nm GAA-FET-based SRAM with BDI, we show that the SRAM does not flip even if the particle strike is in the worst-case scenario for LET > LET max .

42 ENGINEERING↗
NASA NTRS1967

Multiplexer uses insulated gate-field effect transistors

Small lightweight multiplexer incorporates IG-FETs /Insulated Gate-Field Effect Transistors/ for all digital logic functions, including the internally generated 3.6-kHz clock. It consists of 30 primary channels, each of which is sampled 120 times per second.

Gussow, S. S.↗
DOE OSTI2020

Tunnel-FET Switching Is Governed by Non-Lorentzian Spectral Line Shape

In tunnel field-effect transistors (tFETs), the preferred mechanism for switching occurs by alignment (on) or misalignment (off) of two energy levels or band edges. Unfortunately, energy levels are never perfectly sharp. When a quantum dot interacts with a wire, its energy is broadened. Its actual spectral shape controls the current/voltage response of such transistor switches, from on (aligned) to off (misaligned). The most common model of spectral line shape is the Lorentzian, which falls off as reciprocal energy offset squared. Unfortunately, this is too slow a turnoff, algebraically, to be useful as a transistor switch. Electronic switches generally demand an on/off ratio of at least a million. Steep exponentially falling spectral tails would be needed for rapid off-state switching. This requires a new electronic feature, not previously recognized: narrowband, heavy-effective mass, quantum wire electrical contacts, to the tunneling quantum states. These are a necessity for spectrally sharp switching.

42 ENGINEERING↗
DOE OSTI2021

Chemiresistor sensor based on ion-imprinted polymer (IIP)-functionalized rGO for Cd(II) ions in water

This study reports the design and development of a novel chemiresistor (CR) sensor using ion imprinted polymer (IIP)-functionalized reduced graphene oxide (rGO) [IIP/rGO-CR] for cadmium ions (Cd(II)) determination in water. The sensor consisted of a CR transducer made of rGO channel bridging source and drain electrodes prepared by self-assembly and thermal reduction of graphene oxide (GO) on Au interdigitated electrodes chip fabricated on Si/SiO 2 substrate. The IIP was then grafted on rGO using surface-initiated reversible addition-fragmentation chain transfer (RAFT) polymerization with polyethylenimine (PEI) and methylacrylic acid (MAA) as dual functional monomers and Cd(II) ions as template through UV light-initiated copolymerization. The IIP functionalized on rGO acted as an effective recognition element that modulated the resistance of rGO-CR upon binding of Cd(II), enabling Cd(II) detection at ppb level in aqueous solutions. The prepared IIP/rGO-CR sensor worked effectively in the linear range of 2~200ppb and achieved a limit of detection (LOD) of 0.83 ppb, which is lower than the World Health Organization guidelines of 3ppb for drinking water quality. The developed sensor of IIP/rGO-CR showed a high selectivity against a variety of trace and heavy metal ions found in water and good stability for up to 60 days when stored at room temperature for Cd(II) determination in water. Further, the sensor was successfully applied to analyzing Cd(II) spiked in tap, lake and river waters with a 94.5%–113.5% recovery, demonstrating a high degree of accuracy even in complex water samples. Finally, our results illustrated that the CR sensor of IIP functionalized rGO provides a potential platform for sensitive, robust and low-cost environmental analysis of Cd(II) in water.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2005

Beyond G-band : a 235 GHz InP MMIC amplifier

We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.

high electron mobility transistors (HEMTs)↗
NASA NTRS2008

High Power Amplifier and Power Supply

A document discusses the creation of a high-voltage power supply (HVPS) that is able to contain voltages up to -20 kV, keep electrical field strengths to below 200 V/mil (approximately equal to 7.87 kV/mm), and can provide a 200-nanosecond rise/fall time focus modulator swinging between cathode potential of 16.3 kV and -19.3 kV. This HVPS can protect the 95-GHz, pulsed extended interaction klystron (EIK) from arcs/discharges from all sources, including those from within the EIK fs vacuum envelope. This innovation has a multi-winding pulse transformer design, which uses new winding techniques to provide the same delays and rise/fall times (less than 10 nanoseconds) at different potential levels ranging from -20 kV to -16 kV. Another feature involves a high-voltage printed-wiring board that was corona-free at -20 kV DC with a 3- kV AC swing. The corona-free multilayer high-voltage board is used to simulate fields of less than 200 V/mil (approximately equal to 7.87 kV/mm) at 20 kV DC. Drive techniques for the modulator FETs (field-effect transistors) (four to 10 in a series) were created to change states (3,000-V swing) without abrupt steps, while still maintaining required delays and transition times. The packing scheme includes a potting mold to house a ten-stage modulator in the space that, in the past, only housed a four-stage modulator. Problems keeping heat down were solved using aluminum oxide substrate in the high-voltage section to limit temperature rise to less than 10 while withstanding -20 kV DC voltage and remaining corona-free.

Duong, Johnny↗
NASA NTRS2010

Miniature MMIC Low Mass/Power Radiometer Modules for the 180 GHz GeoSTAR Array

We have developed and demonstrated miniature 180 GHz Monolithic Microwave Integrated Circuit (MMIC) radiometer modules that have low noise temperature, low mass and low power consumption. These modules will enable the Geostationary Synthetic Thinned Aperture Radiometer (GeoSTAR) of the Precipitation and All-weather Temperature and Humidity (PATH) Mission for atmospheric temperature and humidity profiling. The GeoSTAR instrument has an array of hundreds of receivers. Technology that was developed included Indium Phosphide (InP) MMIC Low Noise Amplifiers (LNAs) and second harmonic MMIC mixers and I-Q mixers, surface mount Multi-Chip Module (MCM) packages at 180 GHz, and interferometric array at 180 GHz. A complete MMIC chip set for the 180 GHz receiver modules (LNAs and I-Q Second harmonic mixer) was developed. The MMIC LNAs had more than 50% lower noise temperature (NT=300K) than previous state-of-art and MMIC I-Q mixers demonstrated low LO power (3 dBm). Two lots of MMIC wafers were processed with very high DC transconductance of up to 2800 mS/mm for the 35 nm gate length devices. Based on these MMICs a 180 GHz Multichip Module was developed that had a factor of 100 lower mass/volume (16x18x4.5 mm3, 3g) than previous generation 180 GHz receivers.

Monolithic Microwave Integrated Circuit (MMIC)↗
NASA NTRS2015

Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Transistor Gate Drive↗
NASA NTRS1982

Flip-Chip Carrier Would Match Microwave FET Impedances

Proposed field-effect transistor consists of three cells which make up one complete FET pellet. Pellet is flip-chip mounted on carrier with source grounded gate and drain posts connected directly to impedance-matching transmission-line segments. Impedance transformers are part of mounting and contact strips.

Huang, H. C.↗
DOE OSTI2020

Dielectrophoresis assisted rapid, selective and single cell detection of antibiotic resistant bacteria with G-FETs

Time-consuming, expensive and low sensitivity diagnostic methods used for monitoring bacterial infections lead to unnecessary or delays in prescription of the right antibiotic treatment. Determining an optimal clinical treatment requires rapid detection and identification of pathogenic bacteria and their sensitivity to specific antimicrobials. However, diagnostic devices that meet all of these criteria have proven elusive thus far. Graphene field effect transistors (G-FET) are a promising solution, since they are highly sensitive to chemical/biological modification, can have fast detection times and can be placed on different substrates. Here, by integrating specific peptide probes over G-FETs, we present a proof-of-concept study for species and strain specific label-free detection of clinical strains of pathogenic bacteria with high specificity and sensitivity. We found that pyrene-conjugated peptides immobilized on G-FETs were capable of detecting pathogenic Staphylococcus aureus at the single-cell level and discriminate against other gram-positive and gram-negative bacterial pathogens. A similar device was able to discriminate between antibiotic resistant and sensitive strains of Acinetobacter baumannii , suggesting that these devices can also be used for detecting antibiotic resistive pathogens. Furthermore, a new means of enhancing attachment, electric-field assisted binding, reduced the detection limit to 104 cells/ml and the detection time to below 5 minutes. Here, the combination of single step attachment, inexpensive production, rapid, selective and sensitive detection suggest G-FETs plus pyrene-conjugated peptides are a new platform for solving major challenges faced in point of care diagnostics to fight infectious diseases and antimicrobial resistance.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

High-Mobility Hole Transport in Single-Grain PbSe Quantum Dot Superlattice Transistors

Epitaxially-fused superlattices of colloidal quantum dots (QD epi-SLs) may exhibit electronic minibands and high-mobility charge transport, but electrical measurements of epi-SLs have been limited to large-area, polycrystalline samples in which superlattice grain boundaries and intragrain defects suppress/obscure miniband effects. Systematic measurements of charge transport in individual, highly-ordered epi-SL grains would facilitate the study of minibands in QD films. Here, we demonstrate the air-free fabrication of microscale field-effect transistors (μ-FETs) with channels consisting of single PbSe QD epi-SL grains (2–7 μm channel dimensions) and analyze charge transport in these single-grain devices. The eight devices studied show p-channel or ambipolar transport with a hole mobility as high as 3.5 cm 2 V –1 s –1 at 290 K and 6.5 cm 2 V –1 s –1 at 170–220 K, one order of magnitude larger than that of previous QD solids. The mobility peaks at 150–220 K, but device hysteresis at higher temperatures makes the true mobility–temperature curve uncertain and evidence for miniband transport inconclusive.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗