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Technique employs pre-aged, void-free junction composed of parent materials. Basic process for Kirkendall void inhibition can be applied to thermionic power systems, high temperature seals, high temperature junctions between any two metals of differing melting points where Kirkendall void formation would be detrimental.
We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.
The design feasibility study is documented of a single cylinder, free piston Stirling engine/linear alternator (FPSE/LA) power module generating 150 kW-electric (kW sub e), and the determination of the module's maximum feasible power level. The power module configuration was specified to be a single cylinder (single piston, single displacer) FPSE/LA, with tuning capacitors if required. The design requirements were as follows: (1) Maximum electrical power output; (2) Power module thermal efficiency equal to or greater than 20 percent at a specific mass of 5 to 8 kg/kW(sub e); (3) Heater wall temperature/cooler wall temperature = 1050 K/525 K; (4) Sodium heat-pipe heat transport system, pumped loop NaK (sodium-potassium eutectic mixture) rejection system; (5) Maximum power module vibration amplitude = 0.0038 cm; and (6) Design life = 7 years (60,000 hr). The results show that a single cylinder FPSE/LA is capable of meeting program goals and has attractive scaling attributes over the power range from 25 to 150 kW(sub e). Scaling beyond the 150 kW(sub e) power level, the power module efficiency falls and the power module specific mass reaches 10 kg/kW(sub e) at a power output of 500 kW(sub e). A discussion of scaling rules for the engine, alternator, and heat transport systems is presented, along with a detailed description of the conceptual design of a 150 kW(sub e) power module that meets the requirements. Included is a discussion of the design of a dynamic balance system. A parametric study of power module performance conducted over the power output range of 25 to 150 kW(sub e) for temperature ratios of 1.7, 2.0, 2.5, and 3.0 is presented and discussed. The results show that as the temperature ratio decreases, the efficiency falls and specific mass increases. At a temperature ratio of 1.7, the 150 kW(sub e) power module cannot satisfy both efficiency and specific mass goals. As the power level increases from 25 to 150 kW(sub e) at a fixed temperature ratio, power module efficiency is seen to increase slightly, but at the expense of increased specific mass. An empirical equation relating power module thermal efficiency as a function of power module specific mass, power output, and temperature ratio is developed. Alternative configurations to the single cylinder, direct coupled linear alternator approach are also evaluated, but are shown to have technical drawbacks that lessen their attractiveness. The dynamic balance assembly mass (moving mass and structure) represents 20 to 30 percent of the total single cylinder power module mass. Joining two modules in a balanced opposed configuration eliminates the need for the balancer, and a hot end junction can be made without significant addition of structural mass. Recommendations are made for evaluation of advanced heat pipe concepts, tests of radial flow heat exchangers, and evaluation of high temperature alternator materials.
Computer analysis was used to determine the AMO conversion efficiency of single-junction crystalline cells, two-cell and three-cell crystalline tandem structures operating under 100 suns and at 80 C. For optimally designed devices, the calculated efficiencies are 24% for single-junction cells, 33 to 35% for two-cell tandem structures, and 37 to 39% for three-cell tandem structures. Practical efficiencies are expected to be about 15 relative percentage points lower in each case.
This design allows broadband power combining with high isolation between the H port and E port, and achieves a lower insertion loss than any other broadband planar magic-T. Passive micro wave/millimeter-wave signal power is combined both in-phase and out-of-phase at the ports, with the phase error being less than 1 , which is limited by port impedance. The in-phase signal combiner consists of two quarter-wavelength-long transmission lines combined at the microstrip line junction. The out-of-phase signal combiner consists of two half-wavelength-long transmission lines combined in series. Structural symmetry creates a virtual ground plane at the combining junction, and the combined signal is converted from microstrip line to slotline. Optimum realizable characteristic impedances are used so that the magic-T provides broadband response with low return loss. The magic-T is used in microwave and millimeter-wave frequencies, with the operating bandwidth being approximately 100 percent. The minimum isolation obtainable is 32 dB from port E to port H. The magic-T VSWR is less than 1.1 in the operating band. Operating temperature is mainly dependent on the variation in the dielectric constant of the substrate. Using crystallized substrate, the invention can operate in an extremely broad range of temperatures (from 0 to 400 K). It has a very high reliability because it has no moving parts and requires no maintenance, though it is desirable that the magic-T operate in a low-humidity environment. Fabrication of this design is very simple, using only two metallized layers. No bond wires, via holes, or air bridges are required. Additionally, this magic-T can operate as an individual component without auxiliary components.
Inelastic electron tunneling spectroscopy is a useful technique for the study of vibrational modes of molecules adsorbed on the surface of oxide layers in a metal-insulator-metal tunnel junction. The technique involves studying the effects of adsorbed molecules on the tunneling spectrum of such junctions. The data give useful information about the structure, bonding, and orientation of adsorbed molecules. One of the major advantages of inelastic electron tunneling spectroscopy is its sensitivity. It is capable of detecting on the order of 10 to the 10th molecules (a fraction of a monolayer) on a 1 sq mm junction. It has been successfully used in studies of catalysis, biology, trace impurity detection, and electronic excitations. Because of its high sensitivity, this technique shows great promise in the area of solid-state electronic chemical sensing.
Low thermal budget (LTB) annealing has become increasingly critical for shallow junctions as semiconductor devices are scaled down. Plasma Enhanced Annealing (PEA) has emerged as a promising LTB annealing process, however its mechanisms remain unclear. In this study, arsenic and boron implanted silicon wafers were subjected to helium or argon ion bombardment generated by annealing plasmas under controlled ion energies and doses in a home-built annealing reactor. The structural and electrical changes were characterized by four-point probe measurements, secondary ion mass spectrometry, Raman spectroscopy and spectroscopic ellipsometry. A pronounced reduction in sheet resistance, accompanied by a decrease in the damage layer thickness demonstrates the surface selective annealing capability of PEA process. Comparative studies using He and Ar plasmas and related ion bombardment reveal a dependence of activation efficacy on both ion species and the dopant implantation profile. Furthermore, a multi-step annealing mechanism is proposed, consisting of an initial (low dose) structural recovery stage followed by the generation of “extended” defects and concluded at large doses by an enhanced dopant activation. The proposed annealing kinetics are thought to be controlled by ion flux, dose and energy. Finally, these results highlight PEA as an effective, surface-selective, LTB approach for shallow-dopant activation and near surface annealing, and provide mechanistic insights into PEA processes.
Some logic circuits have been built and demonstrated to work substantially as intended, all as part of a continuing effort to exploit the high degrees of design flexibility and functionality of the electronic devices known as G(sup 4)FETs and described below. These logic circuits are intended to serve as prototypes of more complex advanced programmable-logicdevice-type integrated circuits, including field-programmable gate arrays (FPGAs). In comparison with prior FPGAs, these advanced FPGAs could be much more efficient because the functionality of G(sup 4)FETs is such that fewer discrete components are needed to perform a given logic function in G(sup 4)FET circuitry than are needed perform the same logic function in conventional transistor-based circuitry. The underlying concept of using G(sup 4)FETs as building blocks of programmable logic circuitry was also described, from a different perspective, in G(sup 4)FETs as Universal and Programmable Logic Gates (NPO-41698), NASA Tech Briefs, Vol. 31, No. 7 (July 2007), page 44. A G(sup 4)FET can be characterized as an accumulation-mode silicon-on-insulator (SOI) metal oxide/semiconductor field-effect transistor (MOSFET) featuring two junction field-effect transistor (JFET) gates. The structure of a G(sup 4)FET (see Figure 1) is the same as that of a p-channel inversion-mode SOI MOSFET with two body contacts on each side of the channel. The top gate (G1), the substrate emulating a back gate (G2), and the junction gates (JG1 and JG2) can be biased independently of each other and, hence, each can be used to independently control some aspects of the conduction characteristics of the transistor. The independence of the actions of the four gates is what affords the enhanced functionality and design flexibility of G(sup 4)FETs. The present G(sup 4)FET logic circuits include an adjustable-threshold inverter, a real-time-reconfigurable logic gate, and a dynamic random-access memory (DRAM) cell (see Figure 2). The configuration of the adjustable-threshold inverter is similar to that of an ordinary complementary metal oxide semiconductor (CMOS) inverter except that an NMOSFET (a MOSFET having an n-doped channel and a p-doped Si substrate) is replaced by an n-channel G(sup 4)FET
The global symmetries of a D -dimensional quantum field theory (QFT) can, in many cases, be captured in terms of a ( D + 1 )-dimensional symmetry topological field theory (SymTFT). In this work we construct a ( D + 1 )-dimensional theory which governs the symmetries of QFTs with multiple sectors which have connected correlators that admit a decoupling limit. The associated symmetry field theory decomposes into a SymTree, namely a treelike structure of SymTFTs fused along possibly nontopological junctions. In string-realized multisector QFTs, these junctions are smoothed out in the extradimensional geometry, as we demonstrate in examples. We further use this perspective to study the fate of higher-form symmetries in the context of holographic large M averaging where the topological sectors of different large M replicas become dressed by additional extended operators associated with the SymTree. Published by the American Physical Society 2024
A first-order analysis of HLE cells is presented for both beginning-of-life and end-of-life conditions. Based on this analysis and on experimentally observed values for material parameters. Design approaches for both space and terrestrial cells are presented. The approaches result in specification of doping levels, junction depths, and surface conditions. The proposed structures are projected to have both high V sub OC and high J sub SC.
Progress is reported in the creation of a two dimensional Fourier transformer for optical images based on the zinc oxide on silicon technology. The sputtering of zinc oxide films using a micro etch system and the possibility of a spray-on technique based on zinc chloride dissolved in alcohol solution are discussed. Refinements to techniques for making platinum silicide Schottky barrier junctions essential for constructing the ultimate convolver structure are described.
This paper presents a physics-based model describing the current-induced formation of a parasitic barrier in the conduction band at the base collector heterojunction in npn SiGe heterojunction bipolar transistors (HBTs). Due to the valence band discontinuity DELTA E(sub v), hole injection into the collector at the onset of base pushout is impeded, which gives rise to formation of a barrier to electron transport which degrades the device's high frequency performance. In this paper, we present results from an analytical model for the height of the barrier calculated from the device's structure as a function of the collector junction bias and collector current density.
A cytidine-free ribozyme with RNA ligase activity was obtained by in vitro evolution, starting from a pool of random- sequence RNAs that contained only guanosine, adenosine, and uridine. This ribozyme contains 74 nt and catalyzes formation of a 3',5' -phosphodiester linkage with a catalytic rate of 0.016/min. The RNA adopts a simple secondary structure based on a three-way junction motif, with ligation occurring at the end of a stem region located several nucleotides away from the junction. Cytidine was introduced to the cytidine-free ribozyme in a combinatorial fashion and additional rounds of in vitro evolution were carried out to allow the molecule to adapt to this added component. The resulting cytidine-containing ribozyme formed a 3',5' linkage with a catalytic rate of 0.32/min. The improved rate of the cytidine-containing ribozyme was the result of 12 mutations, including seven added cytidines, that remodeled the internal bulge loops located adjacent to the three-way junction and stabilized the peripheral stem regions.
The carbon Nanotube junctions have recently emerged as excellent candidates for use as the building blocks in the formation of nanoscale electronic devices. While the simple joint of two dissimilar tubes can be generated by the introduction of a pair of heptagon-pentagon defects in an otherwise perfect hexagonal grapheme sheet, more complex joints require other mechanisms. In this work we explore structural and electronic properties of complex 3-point junctions of carbon nanotubes using a generalized tight-binding molecular-dynamics scheme.
We study topologically stable defect structures in systems where the defect line classification in three dimensions and associated algebra of interactions (the fundamental group) are governed by the non-Abelian eight-element group, the quaternions 𝑄 8 . The non-Abelian character of the defect algebra leads to a topological rigidity of bound defect pairs, and trivalent junctions which are the building blocks of multijunction trivalent networks. We realize such structures in laboratory chiral nematics and analyze their behavior analytically, along with numerical modeling.
The presence of copper impurity, up to 10 to the 15th atoms/cc, in single crystal silicon has been shown to have no deleterious effect on the p-n junction solar cell performance. However, in polycrystalline silicon, copper atoms tend to migrate to the defect sites because of the structural sensitive properties of copper. This study was undertaken to investigate the influence of this behavior of copper impurity on the performance of p-n junction solar cells fabricated from structurally imperfect silicon. Two sets of polycrystalline silicon substrates containing copper were examined. In one set of samples, copper was incorporated during growth, whereas in the other, copper was diffused. Solar cells were fabricated on both the sets of substrates by a standard process. Dark and light I-V and spectral response characteristics of the cells were measured and compared with copper-free polycrystalline silicon solar cells. The results and the model are discussed.
The authors have designed, fabricated, and tested a quasi-optical submillimeter wave receiver with an Nb/AlO(x)/Nb tunnel junction. This design incorporates a hybrid antenna fed by a planar logarithmic spiral structure in order to couple to the radiation field from the telescope. The novel matching circuit requires several layers of photolithographic processing on top of the actual tunneling device. Computer modeling of the device correctly predicted the measured bandwidth and the characteristic frequencies to within 8 percent. A good match has been obtained from 200 to 475 GHz between the antenna and a relatively large area (1 sq mm) tunnel junction with omega(R(n))C about 2-4. Noise measurements at 318 GHz, 395 GHz, 426 GHz, and 492 GHz yielded uncorrected double sideband receiver noise temperatures of 200 K, 230 K, 220 K, and 500 K, respectively. Using the same optics, coupling efficiencies between the receiver and the Caltech Submillimeter Telescope were found to have values approaching those achieved by the best waveguide-horn-based receiver systems.
Investigation of the dependence of the photocurrent generated in silicon p-n junctions on the energy of the incident photons to obtain details concerning the fine structure in the indirect optical-absorption edge of silicon. It is found that at room temperature there are three prominent thresholds in the absorption tail. The first, which is not too well defined, occurs at 0.91 eV, the second at 0.99 eV, and the third at 1.026 eV. The dependence of the absorption coefficient on the photon energy following the latter two thresholds is found to differ from that found by Mcfarlane et al. (1958). The threshold energies and temperature dependence of the absorption coefficient suggest that two- and three-phonon processes give rise to the absorption tail. In the transverse-optical phonon-absorption region more structure is found in the absorption coefficient than is accounted for by the theory.