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Results for “metal–oxide interface”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

In situ synchrotron x-ray studies of epitaxial SrCoO x films during ionic liquid gating

The manipulation of ions in complex oxide materials can be used to mimic brain-like plasticity through changes to the resistivity of a neuromorphic device. Advances in the design of more energy efficient devices require improved understanding of how ions migrate within a material and across its interface. We investigate the exchange of oxygen and hydrogen in a model SrCoO x epitaxial film—a material that transitions between a ferromagnetic metal and antiferromagnetic insulator depending on the oxygen concentration. Changes to the film during ionic liquid gating were measured by in situ synchrotron x-ray techniques as a function of time and gate voltage, examining the reversibility of the oxide over one complete gating cycle. We find that the out-of-plane lattice constant and oxygen vacancy concentration of SrCoO x are largely reversible although changes were observed in the ordered vacancy structure. Our results provide much needed insight into electrolyte-gated phase behavior in the transition metal oxides.

Li, Yan [Argonne National Laboratory (ANL), Argonn↗
DOE OSTI2025

Interfacial oxide and other species in trimethylaluminum-pretreated atomic layer deposition-Al 2 O 3 /GaN characterized by sputter-assisted ToF-SIMS

Deposition techniques, like atomic layer deposition (ALD), are used to form high-quality dielectrics for GaN-based metal–oxide–semiconductor (MOS) gate structures due to the lack of a reliable thermal oxide in GaN. Moreover, interfacial GaO x from pre-existing native oxides is thought to adversely impact channel carrier dynamics and induce undesired threshold voltage shifts in GaN-based MOS gate structures. Exposure of the GaN surface to the trimethylaluminum (TMA) precursor prior to standard alumina ALD decreases the native oxide layer on GaN, but the extent of chemical modification has not been well studied in the context of interface composition in a MOS gate structure. Herein, we compare annealed 55 nm Al 2 O 3 dielectric films on GaN grown using either a water-first ALD process or a process including sequential pulses of TMA immediately before the initiation of Al 2 O 3 ALD. Time-of-Flight Secondary Ion Mass Spectrometry measures differences in the interfacial GaO x content between each ALD film. Here, it also detects surface contaminant species like Si, F, S, and C. Furthermore, we report the formation of an AlN species at the Al 2 O 3 /GaN interface, which is more prominent for the film grown using the TMA pre-pulse step. In general, this work demonstrates that the TMA pre-pulse step is an effective strategy for cleaning substrate surfaces prior to ALD.

Atomic layer deposition↗
NASA NTRS1976

Time-dependent MOS breakdown

A general model for time-dependent breakdown in metal-oxide-silicon (MOS) structures is developed and related to experimental measurements on samples deliberately contaminated with Na. A statistical method is used for measuring the breakdown probability as a function of log time and applied field. It is shown that three time regions of breakdown can be explained respectively in terms of silicon surface defects, ion emission from the metal interface, and lateral ion diffusion at the silicon interface.

Li, S. P.↗
NASA NTRS1978

Solar cells having integral collector grids

A heterojunction or Schottky barrier photovoltaic device is described, comprising a conductive base metal layer. A back surface field region was formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device. A metal alloy grid network was included. An insulating layer prevented electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer.

Evans, J. C., Jr.↗
NASA NTRS1979

Method for fabricating solar cells having integrated collector grids

A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer compatible with and coating predominately the exposed surface of the p-type substrate of the device such that a back surface field region is formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device having a metal alloy grid network of the same metal elements of the oxide constituents of the mixed metal oxide layer embedded in the mixed metal oxide layer, an insulating layer which prevents electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer, and a metal contact means covering the insulating layer and in intimate contact with the metal grid network embedded in the transparent, conductive oxide layer for conducting electrons generated by the photovoltaic process from the device.

Evans, J. C., Jr.↗
NASA NTRS1982

Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunneling

Thin-oxide (40-50 A) metal oxide semiconductor (MOS) structures are shown to exhibit, before large levels of electron tunnel injection, the near-ideal behavior predicted for a uniform trapezoidal barrier with thick-oxide properties. The oscillatory field dependence caused by electron-wave interference at the Si/SiO2 interface suggests an abrupt, one-monolayer barrier transition (approximately 2.5 A) consistent with earlier work. After tunnel injection of 10 to the 17th - 5 x 10 to the 18th electrons/sq cm, the barrier undergoes appreciable degradation, leading to enhanced tunneling conductance. Reproducible behavior is observed among different samples. This effect is found to be consistent with the generation of positive states in the region of the oxide near the Si/SiO2 interface (less than 20 A), where the tunneling electrons emerge into the oxide conduction band.

Maserjian, J.↗
NASA NTRS1983

X-ray photoelectron spectroscopy and friction studies of nickel-zinc and manganese-zinc ferrites in contact with metals

X-ray photoelectron spectroscopy analysis and sliding friction experiments were conducted with hot-pressed, polycrystalline Ni-Zn and Mn-Zn ferrites in sliding contact with various transition metals at room temperature in a vacuum of 30 nPa. The results indicate that the coefficients of friction for Ni-Zn and Mn-Zn ferrites in contact with metals are related to the relative chemical activity in these metals: the more active the metal, the higher is the coefficient of friction. The coefficients of friction for the ferrites correlate with the free energy of formation of the lowest metal oxide. The interfacial bond can be regarded as a chemical bond between the metal atoms and the oxygen anions in the ferrite surfaces. The adsorption of oxygen on clean metal and ferrite surfaces increases the coefficients of friction for the Ni-Zn and Mn-Zn ferrite-metal interfaces.

Miyoshi, K.↗
NASA NTRS1983

Properties of ferrites important to their friction and wear behavior

Environmental, chemical and crystallographical effects on the fundamental nature on friction and wear of the ferrites in contact with metals, magnetic tapes and themselves are reviewed. The removal of adsorbed films from the surfaces of ferrites results in very strong interfacial adhesion and high friction in ferrite to metal and ferrite to magnetic tape contacts. The metal ferrite bond at the interface is primarily a chemical bond between the metal atoms and the large oxygen anions in the ferrite surface, and the strength of these bonds is related to the oxygen to metal bond strength in the metal oxide. The more active the metal, the higher is the coefficient of friction. Not only under adhesive conditions, but also under abrasive conditions the friction and wear properties of ferrites are related to the crystallographic orientation. With ferrite to ferrite contact the mating of highest atomic density (most closely packed) direction on matched crystallographic planes, that is, 110 directions on /110/planes, results in the lowest coefficient of friction.

Miyoshi, K.↗
NASA NTRS1986

Behavior of inversion layers in 3C silicon carbide

A study on the field-induced surface-charge region in 3C silicon carbide (SiC) using 1 MHz capacitance-voltage (C-V) measurements at room temperature is here reported. A double column mercury probe was used on oxidized SiC substrates to form metal-oxide-semiconductor (MOS) structures. These structures were characterized in terms of the substrate doping profile, effective fixed oxide charge, and interface trap density. A distinctive feature of the MOS C-V curves from accumulation to inversion is that after going into deep depletion the capacitance rises to its equilibrium inversion level during the voltage sweep. Capacitance transient measurements indicate that the minority-carrier generation occurs at the SiO2/SiC interface.

Avila, R. E.↗
NASA NTRS1954

Relation Between Roughness of Interface and Adherence of Porcelain Enamel to Steel

Porcelain-enamel ground coats were prepared and applied under conditions that gave various degrees of adherence between enamel and a low-carbon steel (enameling iron). The variations in adherence were produced by (a) varying the amount of cobalt-oxide addition in the frit, (b) varying the type of metallic-oxide addition in the frit, keeping the amount constant at 0.8 weight percent, (c) varying the surface treatment of the metal before application of the enamel, by pickling, sandblasting, and polishing, and (d) varying the time of firing of the enamel containing 0.8 percent of cobalt oxide. Specimens of each enamel were given the standard adherence test of the Porcelain Enamel Institute. Metallographic sections were made on which the roughness of interface was evaluated by counting the number of anchor points (undercuts) per centimeter of specimen length and also by measuring the length of the interface and expressing results as the ratio of this length to the length of a straight line parallel to the over-all direction of the interface.

Richmond, J C↗
NASA NTRS1995

Thermal barrier coating life modeling in aircraft gas turbine engines

Analytical models useful for predicting ceramic thermal barrier coating (TBC) spalling life in aircraft gas turbine engines are presented. Electron beam-physical vapor deposited (EB-PVD) and plasma sprayed TBC systems are discussed. TBC spalling was attributed to a combination of mechanisms such as metal oxidation at the ceramic-metal interface, ceramic-metal interface stress concentrations at free surfaces due to dissimilar materials, ceramic-metal interface stresses caused by local radius of curvature and interface roughness, material properties and mechanical behavior, transient temperature gradients across the ceramic layer and component design features. TBC spalling life analytical models were developed based on observations of TBC failure modes and plausible failure theories. TBC failure was assumed to occur when the imposed stresses exceeded the material strength (at or near the ceramic-metal interface). TBC failure knowledge gaps caused by lack of experimental evidence and analytical understanding are noted. The analytical models are considered initial engineering approaches that capture observed TBC failure trends.

Nissley, D. M.↗
NASA NTRS1995

Thermal barrier coating life modeling in aircraft gas turbine engines

Analytical models for predicting ceramic thermal barrier coating (TBC) spalling life in aircraft gas turbine engines are presented. Electron beam-physical vapor deposited (EB-PVD) and plasma sprayed TBC systems are discussed. An overview of the following TBC spalling mechanisms is presented: metal oxidation at the ceramic-metal interface, ceramic-metal interface stress singularities at edges and corners, ceramic-metal interface stresses caused by radius of curvature and interface roughness, material properties and mechanical behavior, temperature gradients, component design features and object impact damage. TBC spalling life analytical models are proposed based on observations of TBC spalling and plausible failure theories. TBC spalling was assumed to occur when the imposed stresses exceed the material strength (at or near the ceramic-metal interface). TBC failure knowledge gaps caused by lack of experimental evidence and analytical understanding are noted. The analytical models are considered initial engineering approaches that capture observed TBC failure trends.

Nissley, David M.↗
NASA NTRS2018

Transition Metal Oxides as Cathodes in Li-O2 battery: A First Principles Investigation

Li-O2 batteries have traditionally used carbon based electrodes (graphite, buckypaper) as the cathode of choice due to its good electrical conductivity, stability against non-aqueous electrolytes like Dimethyl ether (DME) and ease of handling. But, the carbon cathode also leads to formation of carbonate by-products that increase overpotentials during charging leading to degradation of cathode and reduction of cyclability. In this work, we investigate some of the well-known oxides as cathodes with focus on the interface between the oxide surfaces and the discharge product: Li2O2, in the Li-O2 battery using first principles computations. Our results show that attention must be paid on choosing the appropriate surface of the oxides. We extend the analysis to suggest other possible oxide chemistries that should be investigated as cathodes in Li-O2 batteries.

Li-O2 battery↗
NASA NTRS2019

Transparent Conducting Oxides as Cathodes in Li-O2 Batteries: A First Principles Computational Investigation

Li-O2 batteries have traditionally used carbon based electrodes (graphite, buckypaper) as the cathode of choice due toits good electrical conductivity, stability against non-aqueous electrolytes like dimethoxyethane (DME) and ease ofhandling. But, the carbon cathode also leads to formation of carbonate by-products that increase overpotentials duringcharging leading to degradation of the cathode and reduction of cyclability. Recent investigations have focused on using metal-oxides like SnO2, TiO2 as viable cathodes-alternatives in Li-O2 systems. In this paper, we investigate transparent conducting oxides (TCOs) as cathodes with focus on the interface between the TCO surfaces and the discharge product, Li2O2, in the Li-O2 battery using first principles computations.

transparent conducting oxides↗
NASA NTRSDate not supplied

Marangoni effect and its potential utilization in supporting lunar habitats and other extraterrestrial endeavors

Tears of wine is a phenomenon frequently observed as a ring of wine formed near the top of the glass generates droplets that fall back into the wine. This phenomenon can be explained by the Marangoni effect driven by the surface tension created via gradient on concentration and temperature along with the interface between two phases. Besides being observed while drinking wine, the Marangoni effect is crucial for welding metals, manufacturing integrated circuits, and growing crystals; the Marangoni effect might be also crucial in supporting lunar habitats and other extraterrestrial endeavors as vacuum and reduced gravity are expected to augment the Marangoni effect on extraterrestrial molten soil leading to sustainable extraterrestrial in-situ resources utilization (ISRU). Preliminary Marangoni effect assessment on molten lunar regolith was conducted via JSC-1A lunar regolith simulant under vacuum yielding a spontaneous upwards migration of a uniform molten thin-film front that climbed the crucible wall covering the entire wall’s surface and reaching the crucible’s top end. A temperature gradient within the melt’s bulk and along the crucible’s wall generates a surface tension large enough not only to form a meniscus within the three-phase junction (crucible’s wall, bulk melt, and vacuum) but also to supersede the gravitational force to create the upwards migration of a thin film front originated on the meniscus. The observed extensive wettability of the melt with the crucible surface, an additional key factor besides surface tension necessary to sustain upwards migration, is atypical to what it has been witnessed on molten JSC-1A lunar regolith simulant under non-vacuum conditions and smaller sample sizes. The unique formation and self-migration of a thin-film front could enable key ISRU processes such as thin-film coating, crystal growth, and feedstock generation for additive 3D printing. Further assessment on the higher-temperature vacuum-driven decomposition of the uniform thin-film front as it climbed the crucible’s wall revealed a significant decomposition of various simulant’s metal-oxide components into their respective oxygen and metal elements strengthening the feasibility of extraterrestrial generation and fractional separation of oxygen and metals/alloys with none or minimal need for terrestrial precursors. The Marangoni effect assessment on molten JSC-1A lunar regolith simulant clearly opens novel pathways in future extraterrestrial ISRU endeavors including manufacturing and mining. Extraterrestrial mining will require an operational approach completely different from the terrestrial one that heavily relies on not only mechanical excavation and transportation but also post-processing; an in-situ all-in-one process might be feasible via these two coupled phenomena, self-migration and decomposition.

J A Dominguez↗
NASA NTRSDate not supplied

Advanced Metal Separation (AMS) via Marangoni Effect-driven Separation

For practical, economical, and sustainable human missions to the Moon, processing of lunar regolith and metal oxides is necessary for localized production of oxygen (O2) and metals that can be repurposed as rocket propellant, life support O2, and in-space manufactured parts. The primary candidates for in-situ resource utilization (ISRU) regolith processing are carbothermic reductions and molten regolith electrolysis (MRE) which both produce oxygen and a reduced, deoxygenated metallic slag. A metal separation technique is still required to capture and purify metals from the deoxygenated slag for reuse in areas such as metallic part fabrication, structural or design frameworks, and metal catalyst production. The Marangoni Effect is best explained as mass transfer along an interface driven by surface tension gradients induced by temperature and concentration differences. Due to the temperature gradients, molten metal can be transported in this fashion to create thin films. This method can transport molten metal in the absence of gravity or mechanical motion and greatly increases the available surface area for a vacuum fractional separation process. In this study, a novel vacuum furnace induces the Marangoni Effect to fractionally decompose and separate valuable metals (e.g., aluminum) from thin films of molten metal via vacuum distillation. The proposed work will examine lunar regolith, metal-based recycling feedstocks, and metallic slags produced from the carbothermal reduction of regolith. Data and observations from this study could produce a simple yet effective method of refining lunar derived metals by taking advantage of the high vacuum environment present on the lunar surface.

ISRU↗