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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Design, development, and field demonstration of a remotely deployable water quality monitoring system

A prototype water quality monitoring system is described which offers almost continuous in situ monitoring. The two-man portable system features: (1) a microprocessor controlled central processing unit which allows preprogrammed sampling schedules and reprogramming in situ; (2) a subsurface unit for multiple depth capability and security from vandalism; (3) an acoustic data link for communications between the subsurface unit and the surface control unit; (4) eight water quality parameter sensors; (5) a nonvolatile magnetic bubble memory which prevents data loss in the event of power interruption; (6) a rechargeable power supply sufficient for 2 weeks of unattended operation; (7) a water sampler which can collect samples for laboratory analysis; (8) data output in direct engineering units on printed tape or through a computer compatible link; (9) internal electronic calibration eliminating external sensor adjustment; and (10) acoustic location and recovery systems. Data obtained in Saginaw Bay, Lake Huron are tabulated.

Wallace, J. W.↗
NASA NTRS1985

Expanding role for autonomy in military space

The Jet Propulsion Laboratory is currently transferring satellite on-board autonomy technology to the USAF for use in military spacecraft as a means of lowering the ground support requirements. The techniques were proven on the Viking and Voyager spacecraft and permitted on-board fault detection and correction. New military satellites will incorporate an autonomous redundancy and maintenance management subsystem in an on-board computer, while the system will still be subject to ground-based safing commands for situations demanding deeper analyses. A level 5 autonomy will need 256 kb memory, 10 Mb nonvolatile data storage and 50 W power and will weigh 20 kg. Systems will be periodically checked and compared with an ideal in the data base. Deviations detected will result in a rollback and redundant examination by two microprocessors, which can initiate correction commands until operational criteria are met. The development of the expert systems to the point that they satisfy military specifications is expected to take 10 yr.

Evans, D. D.↗
NASA NTRS2007

Modeling Carbon and Hydrocarbon Molecular Structures in EZTB

A software module that models the electronic and mechanical aspects of hydrocarbon molecules and carbon molecular structures on the basis of first principles has been written for incorporation into, and execution within, the Easy (Modular) Tight-Binding (EZTB) software infrastructure, which is summarized briefly in the immediately preceding article. Of particular interest, this module can model carbon crystals and nanotubes characterized by various coordinates and containing defects, without need to adjust parameters of the physical model. The module has been used to study the changes in electronic properties of carbon nanotubes, caused by bending of the nanotubes, for potential utility as the basis of a nonvolatile, electriccharge- free memory devices. For example, in one application of the module, it was found that an initially 50-nmlong carbon, (10,10)-chirality nanotube, which is a metallic conductor when straight, becomes a semiconductor with an energy gap of .3 meV when bent to a lateral displacement of 4 nm at the middle.

Lee, Seungwon↗
NASA NTRS1987

Neural network based feed-forward high density associative memory

A novel thin film approach to neural-network-based high-density associative memory is described. The information is stored locally in a memory matrix of passive, nonvolatile, binary connection elements with a potential to achieve a storage density of 10 to the 9th bits/sq cm. Microswitches based on memory switching in thin film hydrogenated amorphous silicon, and alternatively in manganese oxide, have been used as programmable read-only memory elements. Low-energy switching has been ascertained in both these materials. Fabrication and testing of memory matrix is described. High-speed associative recall approaching 10 to the 7th bits/sec and high storage capacity in such a connection matrix memory system is also described.

Daud, T.↗
DOE OSTI2026

Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor

In this work, we present the theory and modeling framework of a diamond optically gated junction field‐effect transistor (DOGFET). The device utilizes nitrogen substitutional centers in type‐1b diamond to optically modulate a p‐ boron doped diamond channel. Using sub‐gap lasers with intensities as low as 100 W/cm 2 , electrons are optically excited from substitutional nitrogen sites to the conduction band of the diamond substrate, thus enabling the optical gate to exercise control on modulating the space‐charge region at the junction and therefore the channel conductivity. We show that the device can deliver a current of 7 μA/μm, or equivalently 1750 A/cm 2 , while switching at a frequency greater than 100 kHz, in a form factor of 5 μm 2 . The breakdown voltage is found to be greater than 1850 V, with a breakdown field strength of ~13 MV/cm. Moreover, the device supports nonvolatile operation with a “memory effect” enabling single transistor state retention. The presented simulation framework provides a physically grounded insight into the limits and opportunities of optoelectronic diamond systems.

Engineering - Electronic and electrical engineerin↗
NASA NTRS1970

Research on variable threshold transistor storage systems

A fully integrated, electrically alterable, nonvolatile, nondestructive readout control memory was developed, using as storage elements metal-nitride-silicon variable threshold transistors. An optimum approach to such a memory was developed in which a three dimensional selection technique was used, both for read and write operations. Electrical isolation of writing and memory circuits was obtained by means of separate memory and write circuit chips. This method provided protection from voltage breakdowns, increased circuit flexibility, and greater ease of testing of interim and final circuit elements.

Wegener, H. A. R.↗
NASA NTRS1992

Ultra-dense magnetoresistive mass memory

This report details the progress and accomplishments of Nonvolatile Electronics (NVE), Inc., on the design of the wafer scale MRAM mass memory system during the fifth quarter of the project. NVE has made significant progress this quarter on the one megabit design in several different areas. A test chip, which will verify a working GMR bit with the dimensions required by the 1 Meg chip, has been designed, laid out, and is currently being processed in the NVE labs. This test chip will allow electrical specifications, tolerances, and processing issues to be finalized before construction of the actual chip, thus providing a greater assurance of success of the final 1 Meg design. A model has been developed to accurately simulate the parasitic effects of unselected sense lines. This model gives NVE the ability to perform accurate simulations of the array electronic and test different design concepts. Much of the circuit design for the 1 Meg chip has been completed and simulated and these designs are included. Progress has been made in the wafer scale design area to verify the reliable operation of the 16 K macrocell. This is currently being accomplished with the design and construction of two stand alone test systems which will perform life tests and gather data on reliabiliy and wearout mechanisms for analysis.

Daughton, J. M.↗
NASA NTRS2009

Electrically Variable or Programmable Nonvolatile Capacitors

Electrically variable or programmable capacitors based on the unique properties of thin perovskite films are undergoing development. These capacitors show promise of overcoming two important deficiencies of prior electrically programmable capacitors: Unlike in the case of varactors, it is not necessary to supply power continuously to make these capacitors retain their capacitance values. Hence, these capacitors may prove useful as components of nonvolatile analog and digital electronic memories. Unlike in the case of ferroelectric capacitors, it is possible to measure the capacitance values of these capacitors without changing the values. In other words, whereas readout of ferroelectric capacitors is destructive, readout of these capacitors can be nondestructive. A capacitor of this type is a simple two terminal device. It includes a thin film of a suitable perovskite as the dielectric layer, sandwiched between two metal or metal oxide electrodes (for example, see Figure 1). The utility of this device as a variable capacitor is based on a phenomenon, known as electrical-pulse-induced capacitance (EPIC), that is observed in thin perovskite films and especially in those thin perovskite films that exhibit the colossal magnetoresistive (CMR) effect. In EPIC, the application of one or more electrical pulses that exceed a threshold magnitude (typically somewhat less than 1 V) gives rise to a nonvolatile change in capacitance. The change in capacitance depends on the magnitude duration, polarity, and number of pulses. It is not necessary to apply a magnetic field or to cool the device below (or heat it above) room temperature to obtain EPIC. Examples of suitable CMR perovskites include Pr(1-x)Ca(x)MnO3, La(1-x)S-r(x)MnO3,and Nb(1-x)Ca(x)MnO3. Figure 2 is a block diagram showing an EPIC capacitor connected to a circuit that can vary the capacitance, measure the capacitance, and/or measure the resistance of the capacitor.

Shangqing, Liu↗
DOE OSTI2025

Anomalous elastic softening in ferroelectric hafnia under pressure

his study employs first-principles density-functional theory (DFT) calculations to explore the elastic and mechanical properties of ferroelectric hafnia (HfO 2 ) in its polar orthorhombic 𝑃⁢𝑐⁢𝑎⁢2 1 phase under varying hydrostatic pressure conditions up to 30 GPa. Utilizing a plane-wave basis set and Perdew-Burke-Ernzerhof generalized-gradient approximation for solids in our DFT calculations, we investigate both pure and yttrium-substituted HfO 2 . Our findings reveal an anomalous reduction in the 𝐶 33 component of the elastic tensor with increasing pressure, which becomes significant above 15 GPa and signals a potential pressure-driven structural phase transition at higher pressure. The analysis of atomic displacements under pressure sheds light on the unusual mechanical behavior and phase stability of this material. Additionally, we observe a transition from an indirect band gap to a direct band gap with increasing pressure, which could have significant implications for optical applications. Here, the effects of yttrium substitution on the mechanical and electronic properties are further examined, revealing that yttrium substitution softens the elastic response of this material and reduces the electronic band gap. These results enhance our understanding of elastic and mechanical responses of ferroelectric hafnia and its potential for applications in microelectronics, piezoelectric devices, and nonvolatile ferroelectric random-access memories. Further experimental validation is recommended to confirm our predictions and explore the practical implications of the observed phase transitions and electronic behavior of the ferroelectric hafnia under high-pressure conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2004

Stroboscope Controller for Imaging Helicopter Rotors

A versatile electronic timing-and-control unit, denoted a rotorcraft strobe controller, has been developed for use in controlling stroboscopes, lasers, video cameras, and other instruments for capturing still images of rotating machine parts especially helicopter rotors. This unit is designed to be compatible with a variety of sources of input shaftangle or timing signals and to be capable of generating a variety of output signals suitable for triggering instruments characterized by different input-signal specifications. It is also designed to be flexible and reconfigurable in that it can be modified and updated through changes in its control software, without need to change its hardware. Figure 1 is a block diagram of the rotorcraft strobe controller. The control processor is a high-density complementary metal oxide semiconductor, singlechip 8-bit microcontroller. It is connected to a 32K x 8 nonvolatile static random-access memory (RAM) module. Also connected to the control processor is a 32K 8 electrically programmable read-only-memory (EPROM) module, which is used to store the control software. Digital logic support circuitry is implemented in a field-programmable gate array (FPGA). A 240 x 128-dot, 40- character 16-line liquid-crystal display (LCD) module serves as a graphical user interface; the user provides input through a 16-key keypad mounted next to the LCD. A 12-bit digital-to-analog converter (DAC) generates a 0-to-10-V ramp output signal used as part of a rotor-blade monitoring system, while the control processor generates all the appropriate strobing signals. Optocouplers are used to isolate all input and output digital signals, and optoisolators are used to isolate all analog signals. The unit is designed to fit inside a 19-in. (.48-cm) rack-mount enclosure. Electronic components are mounted on a custom printed-circuit board (see Figure 2). Two power-conversion modules on the printedcircuit board convert AC power to +5 VDC and 15 VDC, respectively.

Jensen, Scott↗
NASA NTRS2000

Advanced Compact Holographic Data Storage System

JPL, under current sponsorship from NASA Space Science and Earth Science Programs, is developing a high-density, nonvolatile and rad-hard Advanced Holographic Memory (AHM) system to enable large-capacity, high-speed, low power consumption, and read/write of data in a space environment. The entire read/write operation will be controlled with electro-optic mechanism without any moving parts. This CHDS will consist of laser diodes, photorefractive crystal, spatial light modulator, photodetector array, and I/O electronic interface. In operation, pages of information would be recorded and retrieved with random access and highspeed. The nonvolatile, rad-hard characteristics of the holographic memory will provide a revolutionary memory technology to enhance mission capabilities for all NASA's Earth Science Mission. In this paper, recent technology progress in developing this CHDS at JPL will be presented.

Chao, Tien-Hsin↗
NASA NTRS1991

Fast Magnetoresistive Random-Access Memory

Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.

Wu, Jiin-Chuan↗
NASA NTRS2001

Compact Holographic Data Storage

NASA's future missions would require massive high-speed onboard data storage capability to Space Science missions. For Space Science, such as the Europa Lander mission, the onboard data storage requirements would be focused on maximizing the spacecraft's ability to survive fault conditions (i.e., no loss in stored science data when spacecraft enters the 'safe mode') and autonomously recover from them during NASA's long-life and deep space missions. This would require the development of non-volatile memory. In order to survive in the stringent environment during space exploration missions, onboard memory requirements would also include: (1) survive a high radiation environment (1 Mrad), (2) operate effectively and efficiently for a very long time (10 years), and (3) sustain at least a billion write cycles. Therefore, memory technologies requirements of NASA's Earth Science and Space Science missions are large capacity, non-volatility, high-transfer rate, high radiation resistance, high storage density, and high power efficiency. JPL, under current sponsorship from NASA Space Science and Earth Science Programs, is developing a high-density, nonvolatile and rad-hard Compact Holographic Data Storage (CHDS) system to enable large-capacity, high-speed, low power consumption, and read/write of data in a space environment. The entire read/write operation will be controlled with electrooptic mechanism without any moving parts. This CHDS will consist of laser diodes, photorefractive crystal, spatial light modulator, photodetector array, and I/O electronic interface. In operation, pages of information would be recorded and retrieved with random access and high-speed. The nonvolatile, rad-hard characteristics of the holographic memory will provide a revolutionary memory technology meeting the high radiation challenge facing the Europa Lander mission. Additional information is contained in the original extended abstract.

Chao, T. H.↗
NASA NTRS1992

High speed, nondestructive readout from thin-film ferroelectric memory

High-speed polarization-direction-dependent photoresponse from ferroelectric lead zirconate titanate (PbZr(0.53)Ti(0.47)O3) thin films sandwiched between conducting electrodes to form a memory capacitor is reported. Laser pulses with a full width at half maximum of around 10 ns at 532-nm wavelength are utilized to readout the photoresponse signal from individual polarized elements. Such readout is repeated over a million times, with no detectable degradation in the photoresponse or the remanent polarization suggesting its potential as a nondestructive readout (NDRO) of nonvolatile polarization state in thin-film ferroelectric memories. In principle both electronic as well as thermal mechanisms could be triggered by such photon exposure of ferroelectric thin films. A comparison of the photoresponse from capacitors with semitransparent and opaque top electrodes suggests that the observed NDRO signal is primarily due to thermally triggered mechanisms.

Thakoor, Sarita↗
NASA NTRS2001

Space Radiation Effects in Advanced Flash Memories

Memory storage requirements in space systems have steadily increased, much like storage requirements in terrestrial systems. Large arrays of dynamic memories (DRAMs) have been used in solid-state recorders, relying on a combination of shielding and error-detection-and correction (EDAC) to overcome the extreme sensitivity of DRAMs to space radiation. For example, a 2-Gbit memory (with 4-Mb DRAMs) used on the Clementine mission functioned perfectly during its moon mapping mission, in spite of an average of 71 memory bit flips per day from heavy ions. Although EDAC worked well with older types of memory circuits, newer DRAMs use extremely complex internal architectures which has made it increasingly difficult to implement EDAC. Some newer DRAMs have also exhibited catastrophic latchup. Flash memories are an intriguing alternative to DRAMs because of their nonvolatile storage and extremely high storage density, particularly for applications where writing is done relatively infrequently. This paper discusses radiation effects in advanced flash memories, including general observations on scaling and architecture as well as the specific experience obtained at the Jet Propulsion Laboratory in evaluating high-density flash memories for use on the NASA mission to Europa, one of Jupiter's moons. This particular mission must pass through the Jovian radiation belts, which imposes a very demanding radiation requirement.

Johnston, A. H.↗
DOE OSTI2026

Space-Charge-Limited van der Waals Spin Transistor

Integrating semiconducting and magnetic materials could combine transistorlike operation with nonvolatility and enable architectures such as logic in memory. Here, in this work, we employ correlated electrical transport and scanning nitrogen-vacancy center magnetic imaging to elucidate a spin transistor concept that amalgamates vertical and lateral hopping transport inside a 2D antiferromagnetic semiconductor, mechanistically distinct from vertical tunneling devices. Our device, based on a monolayer-bilayer junction in CrSBr, displays giant, gate-tunable magnetoresistance driven by the dual action of electrostatic doping on space-charge-limited lateral conduction and interlayer exchange coupling. Moreover, we visualize a field-trainable, layer-sharing effect that selects between coherent or domain-wall reversal at the spin-flip transition, enabling multilevel, memristive conductance states. Our layer-dependent space charge mechanism for convergent electrical and magnetic control opens opportunities to address limitations in contemporary computing.

2-dimensional systems↗
NASA NTRS1972

Conceptual design and feasibility evaluation model of a 10 to the 8th power bit oligatomic mass memory. Volume 1: Conceptual design

The oligatomic (mirror) thin film memory technology is a suitable candidate for general purpose spaceborne applications in the post-1975 time frame. Capacities of around 10 to the 8th power bits can be reliably implemented with systems designed around a 335 million bit module. The recommended mode was determined following an investigation of implementation sizes ranging from an 8,000,000 to 100,000,000 bits per module. Cost, power, weight, volume, reliability, maintainability and speed were investigated. The memory includes random access, NDRO, SEC-DED, nonvolatility, and dual interface characteristics. The applications most suitable for the technology are those involving a large capacity with high speed (no latency), nonvolatility, and random accessing.

Recksiedler, A. L.↗
NASA NTRS1993

A Magnetic Solid-State Storage Technology: Vertical Bloch Line Storage

No storage technology is known to exist today which simultaneously offers high-storage density, nonvolatility, and a solid-state form factor. For example, common random access memories are solid-state, but are volatile and typically offer modest density. Alternatively, mainstream magnetic disk and magnetic tape systems offer high storage density and nonvolatility, but are fundamentally not solid-state. A number of applications exist which would be suited well with high performance solid- state technology. NASA, for example, is beginning baseline solid-state recorders for upcoming space missions, such as the Cassini mission to Saturn.

Katti, R. R.↗