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At least 127 records · Page 7

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NASA NTRS1987

Determination of lifetime and surface recombination velocity of p-n junction solar cells and diodes by observing transients

The unified view of transient methods for the determination of recombination lifetime tau and back surface recombination velocity S presented here for silicon solar cells and diodes attempts to define limitations of existing methods and to evolve improvements. The presence of sizable junction capacitance for silicon devices under forward voltage invalidates the use of conventional open-circuit voltage decay (OCVD) and reverse recovery. This led Green (1983) to his method of compensated open-circuit voltage decay, in which the addition of an external resistor shunting the solar cell partially corrects for the presence of the junction capacitance. Setting this resistance to zero produces an electrical short-circuit current-decay method, which has the advantage of enabling determination of both tau and S. In an alternate approach, one may insert the functional dependence of the junction capacitance on forward voltage. This new method, denoted by the acronym OCVDCAP, enables the determination of tau with apparently greater accuracy than that obtained by previous methods utilizing voltage transients. But OCVDCAP has in common with the previous methods that it determines tau only and has practical utility only for determining tau of long-base devices. This means that it is useful only for thick base regions. In principle, however, it has an advantage over short-circuit current decay: it requires only pressure contacts, not ohmic contacts, and therefore may be used to determine tau after key processing steps in manufacturing.

Lindholm, Fredrik A.↗

NASA NTRS2001

Effects of AEA Cell-Bypass-Switch Closure on Charged EOS-Aqua NiH2 Cell

The nominal performance of AEA CBPD under simulated EOS-Aqua/Aura flight hardware configuration has been demonstrated. There is no evidence of cell rupture or excessive heat production during or after CBPD switch activation under simulated high cell impedance (open-circuit cell failure mode). Inadvertent CBPD switch activation with a charged cell (low impedance path) intermittently closes and opens up the switch, therefore the device may or may not provide protection against future open-circuit cell failure. Further testing with switches F01 and F02 may provide clarification. The formation of a continuous low impedance path (a homogeneous low melting point alloy), has been confirmed - which is the expected mode of operation.

Keys, Denney↗

NASA NTRS2007

A Method to have Multi-Layer Thermal Insulation Provide Damage Detection

Design and testing of a multi-layer thermal insulation system that also provides debris and micrometeorite damage detection is presented. One layer of the insulation is designed as an array of passive open-circuit electrically conductive spiral trace sensors. The sensors are a new class of sensors that are electrically open-circuits that have no electrical connections thereby eliminating one cause of failure to circuits. The sensors are powered using external oscillating magnetic fields. Once electrically active, they produce their own harmonic magnetic fields. The responding field frequency changes if any sensor is damaged. When the sensors are used together in close proximity, the inductive coupling between sensors provides a means of telemetry. The spiral trace design using reflective electrically conductive material provides sufficient area coverage for the sensor array to serves as a layer of thermal insulation. The other insulation layers are designed to allow the sensor s magnetic field to permeate the insulation layers while having total reflective surface area to reduce thermal energy transfer. Results of characterizing individual sensors and the sensor array s response to punctures are presented. Results of hypervelocity impact testing using projectiles of 1-3.6 millimeter diameter having speeds ranging from 6.7-7.1 kilometers per second are also presented.

Woodward, Stanley E.↗

NASA NTRS1993

Radiation effects in Ga(0.47)In(0.53)As solar cells

The effects of irradiating Ga(0.47)In(0.53)As p-i-n junctions with 1 MeV electrons were measured using Deep Level Transient Spectroscopy (DLTS) and both dark and illuminated (1 sun, air mass zero (AM0)) current-voltage (I-V) measurements. The I-V measurements were made over the range 100K less than T less than 350K. Temperature coefficients of the Ga(0.47)In(0.53)As photovoltaic parameters are presented which follow the same general behavior as other solar cell materials (e.g. Si and GaAs). Fits of the dark I-V data to the two term diode equation before irradiation were satisfactory, yielding an estimated band-gap energy of 0.79 eV. The recombination component of the dark current was found to increase linearly with fluence. DLTS detected two radiation-induced defect levels one shallow (E(sub c)-0.10 eV) and one near mid-gap (E(sub c)-0.29 eV), and it is the near mid-gap level which is expected to be the cause of the dark current increase. The radiation-induced degradation of the open circuit voltage is shown to be accurately predicted from the dark I-V measurements. The degradation of the open circuit voltage dominated the radiation response of the photovoltaic parameters while the short circuit current was only moderately degraded. This behavior is qualitatively explained in terms of the base thickness and dopant level. Appropriate changes in the device structure are suggested which should increase the radiation resistance. Isochronal thermal annealing induced recovery in the photovoltaic parameters at approximately 400K, coinciding with an annealing stage of the near mid-gap defect level.

Walters, R. J.↗

NASA NTRS1974

Closed cycle MHD power generation experiments in the NASA Lewis Facility

Many modifications were made in the MHD facility. These include a redesign of the MHD duct interior, addition of mixing bars, increased electrical isolation of all the high temperature components from each other and from ground, and experimentation with various cesium seed vaporization and injection techniques. With the exception of the cesium system which needs further improvement the above modifications were quite successful and resulted in improvements in generator performance. The facility was run for a total of 400 hours in the past year, with 70 hours of this operation at temperatures of 2000 K or more with hot generator walls. With the exception of replacing one cracked brick in the MHD channel no repairs were required in the high temperature loop components for the duration of these tests. Uniform Faraday and Hall voltage profiles were obtained and the Faraday open circuit voltage varied from 90 to 100 percent of the ideal uBh. The magnitudes of the measured parameters are: Faraday open circuit voltage approximately 70 V, total Faraday current approximately 20 A, Hall voltage approximately 250 V, power output approximately 300 W, and power density .036 W/cu cm.

Sovie, R. J.↗

NASA NTRS2008

Simulating the Gradually Deteriorating Performance of an RTG

Degra (now in version 3) is a computer program that simulates the performance of a radioisotope thermoelectric generator (RTG) over its lifetime. Degra is provided with a graphical user interface that is used to edit input parameters that describe the initial state of the RTG and the time-varying loads and environment to which it will be exposed. Performance is computed by modeling the flows of heat from the radioactive source and through the thermocouples, also allowing for losses, to determine the temperature drop across the thermocouples. This temperature drop is used to determine the open-circuit voltage, electrical resistance, and thermal conductance of the thermocouples. Output power can then be computed by relating the open-circuit voltage and the electrical resistance of the thermocouples to a specified time-varying load voltage. Degra accounts for the gradual deterioration of performance attributable primarily to decay of the radioactive source and secondarily to gradual deterioration of the thermoelectric material. To provide guidance to an RTG designer, given a minimum of input, Degra computes the dimensions, masses, and thermal conductances of important internal structures as well as the overall external dimensions and total mass.

Wood, Eric G.↗

NASA NTRS1983

Process Research on Polycrystalline Silicon Material (PROPSM)

The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

Culik, J. S.↗

NASA NTRS1984

Power control for ac motor

A motor controller employing a triac through which power is supplied to a motor is described. The open circuit voltage appearing across the triac controls the operation of a timing circuit. This timing circuit triggers on the triac at a time following turn off which varies inversely as a function of the amplitude of the open circuit voltage of the triac.

Dabney, R. W.↗

NASA NTRS1987

A Surface-Controlled Solar Cell

Open-circuit voltage and cell efficiency increased. Proposed technique for controlling recombination velocity on solar-cell surfaces provides cells of increased efficiency and open-circuit voltage. In present cells, uncontrolled surface recombination velocity degrades opencircuit voltage and efficiency. In cell using proposed technique, transparent conducting layer, insulated from cell contacts, biased to enable variable control of surface recombination velocity.

Daud, T.↗

NASA NTRS1981

High- and low-resistivity silicon solar cells

Attention is given to recent work at COMSAT Laboratories on improving silicon solar cell efficiencies and open-circuit voltages for both high (more than 1000 ohm-cm) and low (less than 1 ohm-cm) resistivities. It is noted that open-circuit voltages above 650 mV have been obtained for 0.1 ohm-cm cells and that air mass zero efficiencies of 12.5% have been measured from 4-mil 1,250 ohm-cm.

Meulenberg, A., Jr.↗

NASA NTRS1983

Triac failure detector

A failure detector is provided for detecting unidirectional failures in triacs, particularly as used in power factor controllers for induction motors. In a first embodiment, the triac voltage waveform is sensed and upon detection of an unbalanced signal, corresponding to failure of the triac in either the positive or negative direction, the triac is turned full on in both directions. In a second embodiment, a pair of pulsed signals are derived, the pulse durations of which are proportional to the phase difference between the load current and voltage for each half cycle, and the triac is turned full on responsive to a difference in pulse duration between the half cycle signals. An unidirectional open circuit detector is adapted to use a signal from either of the first and second embodiment to turn the triac off in response to an open circuit failure in either direction.

Nola, F. J.↗

NASA NTRS1984

18-percent efficient terrestrial silicon solar cells

Silicon solar cells are described which operate at energy conversion efficiencies in excess of 18 percent under standard terrestrial test conditions (AM1.5, 100 mW/sq cm, 28 C). These are believed to be the most efficient silicon cells reported to date. The high efficiency is a result of the combination of high open-circuit voltage due to the careful attention paid to passivation of the top surface of the cell; high fill factors due to the high open-circuit voltage and low parasitic resistance losses; and high short-circuit current due to the use of shallow diffusions, a low grid coverage, and an optimized double-layer antireflection coating.

Blakers, A. W.↗

NASA NTRS1989

JPS heater and sensor lightning qualification

Simulated lightning strike testing of the Redesigned Solid Rocket Motor (RSRM) field joint protection system heater assembly was performed at Thiokol Corp., Wendover Lightning Facility. Testing consisted of subjecting the lightning evaluation test article to simulated lightning strikes and evaluating the effects of heater cable transients on cables within the systems tunnel. The maximum short circuit current coupled onto a United Space Boosters, Inc. operational flight cable within the systems tunnel, induced by transients from all cables external to the systems tunnel, was 92 amperes. The maximum open-circuit voltage coupled was 316 volts. The maximum short circuit current coupled onto a United Space Boosters, Inc. operational flight cable within the systems tunnel, induced by heater power cable transients only, was 2.7 amperes; the maximum open-circuit voltage coupled was 39 volts. All heater power cable induced coupling was due to simulated lightning discharges only, no heater operating power was applied during the test. The results showed that, for a worst-case lightning discharge, the heater power cable is responsible for a 3.9 decibel increase in voltage coupling to operational flight cables within the systems tunnel. Testing also showed that current and voltage levels coupled onto cables within the systems tunnel are partially dependant on the relative locations of the cables within the systems tunnel.

Cook, M.↗

NASA NTRS1980

Thin n-i-p radiation-resistant solar cell feasibility study

Silicon solar cells were fabricated to verify the predictions that: (1) thin n(+)pp(+) cells can provide high values of open circuit voltage even when high resistivity base material ( 1000 omega-cm) is used; (2) cells with good p(+) back contacts will display an increase in open circuit voltage with decreasing cell thickness; and (3) high quality, thin, high resistivity, solar cells can be made using processing compatible with conventional practice. Analysis of I-V and spectral response measurements of these cells confirmed theoretical predictions and thereby pointed to voltages beyond the near 600 mV obtained in this study.

Allison, J. F.↗

NASA NTRS1984

High-efficiency silicon solar cells

Silicon solar cells are described which operate at energy conversion efficiencies independently measured at 18.7 percent under standard terrestrial test conditions (AM1.5, 100 mW/sq cm, 28 C). These are apparently the most efficient silicon cells fabricated to date. The high-efficiency results from a combination of high open-circuit voltage due to the careful attention paid to the passivation of the top surface of the cell, high fill factor due to the high open-circuit voltage and low parasitic resistance losses, and high short-circuit current density due to the use of shallow diffusions, a low grid coverage, and an optimized double layer antireflection coating.

Green, M. A.↗

NASA NTRS1979

Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

Shibib, M. A.↗

NASA NTRS1975

Effects of high doping levels silicon solar cell performance

The significance of the heavy doping effects (HDE) on the open-circuit voltage of silicon solar cells is assessed. Voltage calculations based on diffusion theory are modified to include the first order features of the HDE. Comparisions of the open-circuit voltage measured for cells of various base resistivities are made with those calculated using the diffusion model with and without the HDE. Results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AM0) and a voltage of 0.7 volts are calculated for 0.1 omega-cm cells assuming an optimum diffused layer impurity profile.

Godlewski, M. P.↗

NASA NTRS2013

RF Reference Switch for Spaceflight Radiometer Calibration

The goal of this technology is to provide improved calibration and measurement sensitivity to the Soil Moisture Active Passive Mission (SMAP) radiometer. While RF switches have been used in the past to calibrate microwave radiometers, the switch used on SMAP employs several techniques uniquely tailored to the instrument requirements and passive remote-sensing in general to improve radiometer performance. Measurement error and sensitivity are improved by employing techniques to reduce thermal gradients within the device, reduce insertion loss during antenna observations, increase insertion loss temporal stability, and increase rejection of radar and RFI (radio-frequency interference) signals during calibration. The two legs of the single-pole double-throw reference switch employ three PIN diodes per leg in a parallel-shunt configuration to minimize insertion loss and increase stability while exceeding rejection requirements at 1,413 MHz. The high-speed packaged diodes are selected to minimize junction capacitance and resistance while ensuring the parallel devices have very similar I-V curves. Switch rejection is improved by adding high-impedance quarter-wave tapers before and after the diodes, along with replacing the ground via of one diode per leg with an open circuit stub. Errors due to thermal gradients in the switch are reduced by embedding the 50-ohm reference load within the switch, along with using a 0.25-in. (approximately equal to 0.6-cm) aluminum prebacked substrate. Previous spaceflight microwave radiometers did not embed the reference load and thermocouple directly within the calibration switch. In doing so, the SMAP switch reduces error caused by thermal gradients between the load and switch. Thermal issues are further reduced by moving the custom, highspeed regulated driver circuit to a physically separate PWB (printed wiring board). Regarding RF performance, previous spaceflight reference switches have not employed high-impedance tapers to improve rejection. The use of open-circuit stubs instead of a via to provide an improved RF short is unique to this design. The stubs are easily tunable to provide high rejection at specific frequencies while maintaining very low insertion loss in-band.

Knuble, Joseph↗