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Silicon with thermally-grown oxide overlayers in the thickness range 15-89 A is studied by angular-dependent XPS. Electron attenuation lengths at 1382 eV are found to be 37 plus or minus 4 A in SiO2 and 27 plus or minus 6 A in Si. Single-crystal effects and thin-layer anomalies are also discussed.
Report describes comprehensive study of hydrogen embrittlement in high purity single-crystal and polycrystalline nickel at temperatures from -130 degrees C to 20 degrees C.
Single-crystal sheets pulled from polten silicon floating on refractory melt require no slicing or polishing. Possible materials are chlorides and fluorides of barium, calcium, and strontium. Refractory melt may be able to absorb impurities from silicon and thus obviate postgrowth purification.
Automated systems regulates sheet width, thickness, and composition. Deviations from preset brightness levels create error signals that alter gas flow, crystal-pulling speed, and melt temperature to produce uniform single-crystal sheets.
The results of experiments designed to test the theory of X-ray transition radiation and to verify the predicted dependence of the characteristic features of the radiation on the radiator dimensions are presented. The X-ray frequency spectrum produced by 5- to 9-GeV electrons over the range 4 to 30 keV was measured with a calibrated single-crystal Bragg spectrometer, and at frequencies up to 100 keV with an NaI scintillator. The interference pattern in the spectrum and the hardening of the radiation with increasing foil thickness are clearly observed. The energy dependence of the total transition-radiation intensity was studied using a radiator with large dimensions designed to yield energy-dependent signals at very high particle energies, up to E/mc-squared approximately equal to 100,000. The results are in good agreement with the theoretical predictions.
The petrographies and phase chemistries of five lunar crystalline anorthositic fragments with Ar-40/Ar-39 plateau 'ages' ranging from 4.1 to 4.3 AE are reported. An investigation is conducted to determine whether the individual fragments are monomict or polymict breccias. For polymict breccias it is attempted to establish whether clasts and matrix have equilibrated chemically. On the basis of the results of the investigation it is suggested that sample 73263,1,1 was a breccia (possibly a clast-laden melt) containing old clasts, incorporated in an ejecta blanket that was annealed at about 4.1 AE in a transient high-temperature event. The sample 73263,1,6 studied is an annealed anorthositic breccia containing approximately 20% clasts dominated by single-crystal plagioclase fragments. The obtained data are consistent with a two-component system containing old plagioclase clasts in a young (about 4.0 AE) annealed, matrix. The annealing event at approximately 4.0 AE was insufficient to equilibrate the argon. It is found that four of the breccias having ages of about 4.2 AE or more are polymict. The most striking feature of all of the samples studied is the presence of a significant amount of 4.2-4.3 AE argon.
X-ray single-crystal diffraction studies, supplemented by electron microprobe analyses of core pigeonites and rim augites from rocks 12031, 15085, 15475, and 15495, have been used to suggest cooling rates for these and other Apollo 12 and 15 rocks studied by similar methods. The extent of subsolidus phase separation of pyroxenes is used as a measure of the cooling rate. The results were interpreted in terms of model cooling histories of a lava flow whose thickness was estimated from the absolute cooling rates obtained by cooling rate experiments and by temperature-time variation through an extrusive flow computed by employing simplified theory of Jaeger. All available data on the exsolution and cation distributions of pyroxenes from Apollo 12 and 15 samples at present are consistent with the hypothesis that these rocks were derived from the top and interior of lava flows with thicknesses of 4-10 m. A process for exsolution of augite from a host pigeonite on (100) has been related to its low-calcium content.
A solar power satellite is the energy-converting element of a system that can deliver some 10 GW of power to utilities on the earth's surface. We evaluated heat engines and solar cells for converting sunshine to electric power at the satellite. A potassium Rankine cycle was the best of the heat engines, and 50 microns thick single-crystal silicon cells were the best of the photovoltaic converters. Neither solar cells nor heat engines had a clear advantage when all factors were considered. The potassium-turbine power plant, however, was more difficult to assemble and required a more expensive orbital assembly base. We therefore based our cost analyses on solar-cell energy conversion, concluding that satellite-generated power could be delivered to utilities for around 4 to 5 cents a kWh.
A system definition study on the Solar Power Satellite System showed that a thin, 50 micrometers, silicon solar cell has significant advantages. The advantages include a significantly lower performance degradation in a radiation environment and high power-to-mass ratios. The advantages of such cells for an employment in space is further investigated. Basic questions concerning the operation of solar cells are considered along with aspects of radiation induced performance degradation. The question arose in this connection how thin a silicon solar cell had to be to achieve resistance to radiation degradation and still have good initial performance. It was found that single-crystal silicon solar cells could be as thin as 50 micrometers and still develop high conversion efficiencies. It is concluded that the use of 50 micrometer silicon solar cells in space-based photovoltaic power systems would be advantageous.
GaAs chemical vapor deposition (CVD) growth on single-crystal GaAs substrates was investigated over a temperature range of 600 to 750 C, As/GA mole-ratio range of 3 to 11, and gas molefraction range 5 x 10 to the minus 9th power to 7x 10 to the minus 7th power for H2S doping. GasAs CVD growth on recrystallized Ge films was investigated for a temperature range of 550 to 700 C, an As/GA mole ratio of 5, and for various H2S mole fraction. The highest efficiency cell observed on these films with 2 mm dots was 4.8% (8% when AR-coated). Improvements in fill factor and opencircuit voltage by about 40% each are required in order to obtain efficiencies of 15% or greater.
Single-crystal GaAs shallow-homojunction solar cells on GaAs or Ge substrates, without Ga sub 1-x Al sub x As window layers, that have conversion efficiencies exceeding 20% at AM1 (17% at AMO). Using a simple theoretical model, good fits were obtained between computer calculations and experimental data for external quantum efficiency and conversion efficiency of cells with different values of n+ layer thickness. The calculations not only yield values for material properties of the GaAs layers composing the cells but will also permit the optimization of cell designs for space and terrestrial applications. Preliminary measurements indicate that the shallow-homojunction cells are resistant to electron irradiation. In the best test so far, bombardment with 1 x 10 to the 16th power/sq cm fluence of 1 MeV electrons reduced the short-circuit current by only about 6%.
The solar power satellite (SPS) concept, under evaluation by NASA since 1974, is discussed. A typical system providing a total of 10,000 MW of electrical power to the ground receiving stations is considered. Energy conversion systems, including the photovoltaic device category using single-crystal silicon cells, are taken into account, as are the 2.45-GHz microwave power-transmission link and the ground receiver (or rectenna). Concepts involving space construction of the satellite's large structures (5 x 25 km) are described, noting that a process similar to the familiar roll-forming of light sheet metal parts has been adapted to the space environment. Transportation vehicles are discussed, including the Space Shuttle planned to reach 60 flights per year by the mid 1980's. Electrical power forecasts and advanced systems cost projections are analyzed, together with a description of costs estimates. The indirect economics of energy research and development, and the present NASA/DOE SPS program are noted.
Refined techniques for surface texturizing, back surface field and back surface reflector formation were evaluated for use with shallow junction, single-crystal silicon solar cells. Each process was characterized individually and collectively as a function of device thickness and bulk resistivity. Among the variables measured and reported are open circuit voltage, short circuit current and spectral response. Substantial improvements were obtained by the utilization of a low cost aluminum paste process to simultaneously remove the unwanted n(+) diffused region, form the back surface field and produce an ohmic contact metallization. The highly effective BSF which results from applying this process has allowed fabrication of cells 0.05 mm thick with initial outputs as high as 79.5 mW/4 sq cm (28 C, AM0) and superior electron radiation tolerance. Cells of 0.02 mm to 0.04 mm thickness have been fabricated with power to mass ratios well in excess of 2 watts per gram.
Copper-doped N/P silicon solar cells fabricated from the Czochralski grown single-crystal wafers were found to have good electrical characteristics, but the titanium-doped N/P silicon solar cells has considerably lower conversion efficiency. However, in the copper/titanium-doped solar cells, copper seems to mitigate the unfavorable effects of titanium. To explain this behavior, microstructural tests were performed on silicon wafers and solar cells doped with copper, titanium and copper/titanium. Dark forward and reverse I-V measurements were performed on the solar cells to correlate the microstructural defects with the p-n junction properties. It was found that copper precipitates were formed in the copper-doped and copper/titanium-doped wafers and cells. There was a significant voltage drop in the dark reverse I-V measurements of the titanium solar cells. Also, there were some electronically active defects in the depletion region of some titanium-doped cells. Reasons that lead to the above results are given in detail.
It was found that the in situ treatment of 001-plane single-crystal films of MgO (prepared by epitaxial growth from the vapor phase) at high temperatures with a jet of oxygen will produce a surface that is almost equivalent, for epitaxial studies, to surfaces with the same orientation prepared by vacuum cleavage of bulk single crystals. The effectiveness of the process is demonstrated by its impact on the epitaxy of silver.
An experiment designed to measure the transformation pressure of zinc sulfide by a primary pressure method using an indentor-anvil system made of single-crystal diamond is discussed. A nonsorting electrode-grid which can be applied directly to the anvil using optical lithography is described, together with the procedures used for positioning.
The disregistry of holes drilled with a pulse laser beam in 330-micron-thick single-crystal silicon-on-sapphire wafers is examined. The exit positions of the holes were displaced from the hole entrance positions on the opposing face of the wafer, and this random displacement increased with the number of laser pulses required. A model in which the bottom of the drill hole experiences small random displacements during each laser pulse is used to describe the experimental observations. It is shown that the average random displacement caused by each pulse is only a few percent of the hole diameter and can be reduced by using as few laser pulses as necessary while avoiding the cracking and spalling of the wafer that occur with a hole drilled with a single pulse.
The paper presents a study to determine the fracture toughness and to characterize fracture modes of silicon as a function of the orientation of single-crystal and polycrystalline material. It is shown that bar specimens cracked by Knoop microhardness indentation and tested to fracture under four-point bending at room temperature were used to determine the fracture toughness values. It is found that the lowest fracture toughness value of single crystal silicon was 0.82 MN/m to the 3/2 in the 111 plane type orientation, although the difference in values in the 111, 110, and 100 planes was small.