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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,369 records · Page 76
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Characterization of ECRAM materials and devices

As the limits of Moore’s Law approaches, new computing paradigms are developing to breakthrough this bottleneck. One such computer architecture is neuromorphic computing, which models the brain. Electrochemical random-access memory (ECRAM) is a low power and energy efficient memory due to characteristics, such as in-memory compute, ion modulation of the channel conductance, and computation distribution with large scale array integration.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2016

Nanoscale effects in the characterization of viscoelastic materials with atomic force microscopy: Coupling of a quasi-three-dimensional standard linear solid model with in-plane surface interactions

Significant progress has been accomplished in the development of experimental contact-mode and dynamic-mode atomic force microscopy (AFM) methods designed to measure surface material properties. However, current methods are based on one-dimensional (1D) descriptions of the tip-sample interaction forces, thus neglecting the intricacies involved in the material behavior of complex samples (such as soft viscoelastic materials) as well as the differences in material response between the surface and the bulk. In order to begin to address this gap, a computational study is presented where the sample is simulated using an enhanced version of a recently introduced model that treats the surface as a collection of standard-linear-solid viscoelastic elements. The enhanced model introduces in-plane surface elastic forces that can be approximately related to a two-dimensional (2D) Young's modulus. Relevant cases are discussed for single-and multifrequency intermittent-contact AFM imaging, with focus on the calculated surface indentation profiles and tip-sample interaction force curves, as well as their implications with regards to experimental interpretation. A variety of phenomena are examined in detail, which highlight the need for further development of more physically accurate sample models that are specifically designed for AFM simulation. As a result, a multifrequency AFM simulation tool based on the above sample model is provided as supporting information.

36 MATERIALS SCIENCE↗
NASA NTRS1972

Thermophysical characterization of composite materials under transient heating conditions

Thermophysical property measurements were made under transient heating conditions on several materials being considered for use in SCOUT rocket motors. The materials included were ATJ graphite, MX 2600 silica phenolic, FM 5272 cellulose phenolic, and two carbon-carbon composites: CARBITEX 700 and RPP-4. The ATJ was included as a reference or base line material to check performance of the transient tests as it was not expected to be sensitive to heating rate. Measurements included in the program were thermal conductivity, strength, compressive stress-strain (carbon-carbon only), thermal expansion and the effective thermal expansion under partially restrained conditions. Development of this latter measurement was a major part of the program. It consisted of partially restraining the expansion of a specimen as it was heated, measuring the load and strain which occurred (together with a simultaneous modulus determination by superimposing a small cyclic load) and using these quantities to calculate what the effective thermal expansion would have to be to produce the observed stress and deformation. For materials which are sensitive to heating rate, such as reinforced phenolics, it was believed that this would provide a more realistic determination of the thermal expansion as it more nearly simulates the conditions experienced in end use.

Roetling, J.↗
NASA NTRS1983

Analysis of defect structure in silicon. Characterization of SEMIX material. Silicon sheet growth development for the large area silicon sheet task of the low-cost solar array project

Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13C. Important correlation was obtained between defect densities, cell efficiency, and diffusion length. Grain boundary substructure displayed a strong influence on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements gave statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for quantimet quantitative image analyzer (QTM) analysis was perfected and is used routinely. The relationships between hole mobility and grain boundary density was determined. Mobility was measured using the van der Pauw technique, and grain boundary density was measured using quantitative microscopy technique. Mobility was found to decrease with increasing grain boundary density.

Natesh, R.↗
NASA NTRS1984

Material growth and characterization for solid state devices

During the reporting period, InGaAs was grown on Fe-doped (semi-insulating) (100) InP substrates by current controlled liquid phase epitaxy (CCLPE) at 640 C and current densities of 2.5A sq/cm to 5 A/sq cm for periods from 5 to 30 minutes. Special efforts were made to reduce the background carrier concentration in the grown layers as much as possible. The best layers exhibited carrier concentrations in the mid-10 to the 15th power/cu cm range and up to 10,900 sq cm/V-sec room temperature mobility. InGaAsP quaternary layers of energy gap corresponding to wavelengths of approximately 1.5 microns and 1.3 microns were grown on (100) InP substrates by CCLPE. In the device fabrication area, work was directed toward processing MISFET's using InGaAs. SiO2, Si3N4 and Al2O3 were deposited by ion beam sputtering, electron beam evaporation and chemical vapor reaction on Si, GaAs, and InGaAs substrates. SiO2 and Si3N4 sputtered layers were found to possess a high density of pinhole defects that precluded capacitance-voltage analysis. Chemical vapor deposited Al2O3 layers on Si, GaAs and InGaAs substrates also exhibited a large number of pinhole defects. This prevented achieving good MIS devices over most of the substrate surface area.

Stefanakos, E. K.↗
NASA NTRS1983

Characterization of composite materials by means of the ultrasonic stress wave factor

The usual approach to nondestructively evaluating a composite structure involves inspection and mechanical analysis of the inspection results. Such an approach has met with only limited success. On the other hand, the ultrasonic stress wave factor technique directly evaluates the material. Despite requiring access to only one surface of the material, the technique interrogates the material in the directions of applied load. Using the stress wave factor technique it is possible to determine the failure location in the material. The correlation of the stress wave factor with stiffness is shown. In addition, the use of the technique for determining the strength or life of composite material structures is discussed.

Duke, J. C., Jr.↗
NASA NTRS1984

Development and characterization of orthotropic-birefringent materials

Materials were selected and fabrication procedures developed for orthotropic birefringent materials. An epoxy resin (Maraset 658/558 system) was selected as the matrix material. Fibers obtained from style 3733 glass cloth and type 1062 glass roving were used as reinforcement. Two different fabrication procedures were used. In the first one, layers of unidirectional fibers removed from the glass cloth were stacked, impregnated with resin, bagged and cured in the autoclave at an elevated temperature. In the second procedure, the glass roving was drywound over metal frames, impregnated with resin and cured at room temperature under pressure and vacuum in an autoclave. Unidirectional, angle-ply and quasi-isotropic laminates of two thicknesses and with embedded flaws were fabricated. The matrix and the unidirectional glass/epoxy material were fully characterized. The density, fiber volume ratio, mechanical, and optical properties were determined. The fiber volume ratio was over 0.50. Birefringent properties were in good agreement with predictions based on a stress proportioning concept and also, with one exception, with properties predicted by a finite element analysis. Previously announced in STAR as N81-26183

Daniel, I. M.↗
NASA NTRS1984

Material growth and characterization for solid state devices

Manganese was used as the dopant for p-type InGaAs layers grown on semi-insulating (Fe-doped) and n-type (Sn-doped) InP substrates. Optical, electrical (Hall) and SIMS measurements were used to characterize the layers. Mn-diffusion into the substrate (during the growth of In GaAs) was observed only when Fe-doped substrates were used. Quaternary layers of two compositions corresponding to wavelengths (energy gaps) of approximated 1.52 micrometers were successfully grown at a constant temperature of 640 C and InP was grown in the temperature range of 640 C to 655 C. A study of the effect of pulses on the growth velocity of InP indicated no significant change as long as the average applied current was kept constant. A system for depositing films of Al2O3 by the pyrolysis of aluminum isopropoxide was designed and built. Deposited layers on Si were characterized with an ellipsometer and exhibited indices of refraction between 1.582 and 1.622 for films on the order of 3000 A thick. Undoped and p-type (Mn-doped) InGaAs epitaxial layers were also grown on Fe-doped InP substrates through windows in sputtered SiO2 (3200 A thick) layers.

Stefanakos, E. K.↗